Showing 1–5 of 5 results for author: Chellu, A

Nonlinear Optical Microscopy of Semiconductor Metal-Nanocavities

Authors: Riya Varghese, Shambhavee Annurakshita, Yaraslau Tamashevich, Abhiroop Chellu, Subhajit Bej, Heikki Rekola, Jari Lyytikainen, Hanna Wahl, Matias Schildt, Ali Panahpour, Tapio Niemi, Marco Ornigotti, Petri Karvinen, Mircea Guina, Teemu Hakkarainen, Mikko J. Huttunen

Abstract: We use second and third harmonic generation microscopy to investigate the nonlinear optical response of GaAs nanocavities embedded in a gold film and compare them to bare GaAs nanocavities. Our results reveal that the surrounding metallic environment significantly modifies both the intensity and spatial distribution of the nonlinear signals. When the harmonic wavelength is spectrally detuned from… ▽ More We use second and third harmonic generation microscopy to investigate the nonlinear optical response of GaAs nanocavities embedded in a gold film and compare them to bare GaAs nanocavities. Our results reveal that the surrounding metallic environment significantly modifies both the intensity and spatial distribution of the nonlinear signals. When the harmonic wavelength is spectrally detuned from the nanocavity resonance, the effects due to the metallic environment start suppressing the SHG contrast. Numerical simulations confirm that at a 1060 nm pump wavelength, the SHG produced at 530 nm is suppressed due to the dominant plasmonic response of gold. Meanwhile, the THG produced at 353 nm, which coincides with the nanocavity resonance, enables high contrast imaging. Furthermore, by shifting the pump to 710 nm, aligning SHG at 356 nm with the nanocavity resonance, we recover strong SHG contrast, demonstrating a pathway to enhanced imaging of metal-semiconductor heterostructures. △ Less

Submitted 4 April, 2025; originally announced April 2025.

Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities

Authors: Abhiroop Chellu, Subhajit Bej, Hanna Wahl, Hermann Kahle, Topi Uusitalo, Roosa Hytönen, Heikki Rekola, Jouko Lang, Eva Schöll, Lukas Hanschke, Patricia Kallert, Tobias Kipp, Christian Strelow, Marjukka Tuominen, Klaus D. Jöns, Petri Karvinen, Tapio Niemi, Mircea Guina, Teemu Hakkarainen

Abstract: On-chip emitters that can generate single and entangled photons are essential building blocks for developing photonic quantum information processing technologies in a scalable fashion. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light on demand, however at a rate limited by their spontaneous radiative lifetime. In this study, we utilize the P… ▽ More On-chip emitters that can generate single and entangled photons are essential building blocks for developing photonic quantum information processing technologies in a scalable fashion. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light on demand, however at a rate limited by their spontaneous radiative lifetime. In this study, we utilize the Purcell effect to demonstrate up to a 38-fold enhancement in the emission rate of InAs QDs by coupling them to metal-clad GaAs nanopillars. These cavities, featuring a sub-wavelength mode volume of 4.5x10-4 (λ/n)3 and low quality factor of 62, enable Purcell-enhanced single-photon emission across a large bandwidth of 15 nm. The broadband nature of the cavity eliminates the need for implementing tuning mechanisms typically required to achieve QD-cavity resonance, thus relaxing fabrication constraints. Ultimately, this QD-cavity architecture represents a significant stride towards developing solid-state quantum emitters generating near-ideal single-photon states at GHz-level repetition rates. △ Less

Submitted 27 April, 2025; v1 submitted 16 July, 2024; originally announced July 2024.

Comments: v2: Minor changes have been made to the manuscript after v1: Title has been modified. Reference number 42 and 62 updated. The manuscript has been edited to improve the general readability of the text v3: A comprehensive discussion on the collection efficiency of this QD-cavity source has been added in the "Discussions" section of the manuscript. Figure 1 and Figure 6 have been updated

Strain-free GaSb quantum dots as single-photon sources in the telecom S-band

Authors: Johannes Michl, Giora Peniakov, Andreas Pfenning, Joonas Hilska, Abhiroop Chellu, Andreas Bader, Mircea Guina, Sven Höfling, Teemu Hakkarainen, Tobias Huber-Loyola

Abstract: Creating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes has been of high interest in recent years, with research mainly focusing on indium based QDs. However, there is not much data on the optical and spin properties of galliumantimonide (GaSb) QDs, despite it being a physically rich system with a… ▽ More Creating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes has been of high interest in recent years, with research mainly focusing on indium based QDs. However, there is not much data on the optical and spin properties of galliumantimonide (GaSb) QDs, despite it being a physically rich system with an indirect to direct bandgap crossover in the telecom wavelength range. Here, we investigate the (quantum-) optical properties of GaSb quantum dots, which are fabricated by filling droplet-etched nanoholes in an aluminum-galliumantimonide (AlGaSb) matrix. We observe photoluminescence (PL) features from isolated and highly symmetric QDs that exhibit narrow linewidth in the telecom S-band and show an excitonic fine structure splitting of $ΔE=(12.0\pm0.5)μeV$. Moreover, we perform time-resolved measurements of the decay characteristics of an exciton and measure the second-order photon autocorrelation function of the charge complex to $g^{(2)}(0)=0.16\pm0.02$, revealing clear antibunching and thus proving the capability of this material platform to generate non-classical light. △ Less

Submitted 7 May, 2023; originally announced May 2023.

Highly uniform GaSb quantum dots with indirect-direct bandgap crossover at telecom range

Authors: Abhiroop Chellu, Joonas Hilska, Jussi-Pekka Penttinen, Teemu Hakkarainen

Abstract: We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The droplet-mediated growth mechanism allows formation of low QD densities required for non-classical single-QD light sources. The photoluminescence (PL) experiments reveal that the GaSb QDs have an indirect-direct bandgap c… ▽ More We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The droplet-mediated growth mechanism allows formation of low QD densities required for non-classical single-QD light sources. The photoluminescence (PL) experiments reveal that the GaSb QDs have an indirect-direct bandgap crossover at telecom wavelengths. This is due to the alignment of the Γ and L valleys in the conduction band as a result of quantum confinement controlled by dimensions of the nanostructure. We show that in the direct bandgap regime close to 1.5 um wavelength, the GaSb QDs have a type I band alignment and exhibit excitonic emission with narrow spectral lines and very low inhomogeneous broadening of PL emission owing to the high material quality and dimensional uniformity. These properties are extremely promising in terms of applications in infrared quantum optics and quantum photonic integration. △ Less

Submitted 23 April, 2021; v1 submitted 23 February, 2021; originally announced February 2021.

Comments: 12 pages, 4 figures

Journal ref: APL Materials 9, 051116 (2021)

Nanohole etching in AlGaSb with Ga droplets

Authors: Joonas Hilska, Abhiroop Chellu, Teemu Hakkarainen

Abstract: We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature range from 270°C to 500°C, allowing a wide range of tunability of the nanohole density. By leveraging the low vapor pressure of Sb, we can obtain high degree of control over droplet formation and nanohole etching steps and reveal the physics of adatom diffusion in these processes. Furthermore, by combining the e… ▽ More We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature range from 270°C to 500°C, allowing a wide range of tunability of the nanohole density. By leveraging the low vapor pressure of Sb, we can obtain high degree of control over droplet formation and nanohole etching steps and reveal the physics of adatom diffusion in these processes. Furthermore, by combining the experimental results and a geometric diffusion-based model, we can determine the temperature and Sb-flux-dependencies of the critical monolayer coverage of Sb atoms required for driving the droplet etching process to completion. These findings provide new insight into the droplet formation and etching process present in the droplet-mediated synthesis of semiconductor nanostructures and represent a significant step towards development of telecom-emitting quantum dots in the GaSb system. △ Less

Submitted 23 March, 2021; v1 submitted 22 January, 2021; originally announced January 2021.

Comments: 21 pages, 5 figures

Journal ref: Crystal Growth & Design 21,1917 (2021)