Showing 1–1 of 1 results for author: Canato, E

OFF-state trapping phenomena in GaN HEMTs: interplay between gate trapping, acceptor ionization and positive charge redistribution

Authors: E. Canato, M. Meneghini, C. De Santi, F. Masin, A. Stockman, P. Moens, E. Zanoni, G. Meneghesso

Abstract: We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH measurements shown an initial positive VTH variation and an increase in RON then, for drain voltages >100 V, VTH is stable and the RON shows a partial recovery. (ii)… ▽ More We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH measurements shown an initial positive VTH variation and an increase in RON then, for drain voltages >100 V, VTH is stable and the RON shows a partial recovery. (ii) At moderate voltages, VTH instability is related to trapping at the gate stack, due to residual negative charge left behind by the holes that leave the p-GaN layer through the Schottky gate contact and/or to trapping at the barrier. At higher voltages, we demonstrate the interplay of two trapping processes by C-V and pulsed drain current analysis: (iii) a fast storage of positive charge, accumulated near the buffer/SRL interface, not strongly thermally activated, dominating at higher voltages; (iv) a slower negative charge storage, thermally activated with activation energies for trapping and de-trapping equal to ~0.6 eV and ~0.4-0.8 eV, respectively. △ Less

Submitted 14 July, 2021; v1 submitted 13 July, 2021; originally announced July 2021.

Comments: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][European Union's Horizon 2020 research and innovation program][InRel-NPower][grant agreement No. 720527]

Journal ref: Microelectronics Reliability, Volume 114, 2020, 113841