Enhancement in neuromorphic NbO2 memristive device switching at cryogenic temperatures
Authors:
Ted Mburu,
Zachary R. Robinson,
Karsten Beckmann,
Uday Lamba,
Alex Powell,
Nathaniel Cady,
M. C. Sullivan
Abstract:
The electrical properties and performance characteristics of niobium dioxide (NbO$_\mathrm{2}$)-based memristive devices are examined at cryogenic temperatures. Sub-stoichiometric Nb$_\mathrm{2}$O$_\mathrm{5}$ was deposited via magnetron sputtering and patterned in microscale (2$\times$2 - 15$\times$15 $μ$m$^2$) cross-bar Au/Ru/NbO$_\mathrm{x}$/Pt devices and electroformed at 3-5 V to make NbO…
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The electrical properties and performance characteristics of niobium dioxide (NbO$_\mathrm{2}$)-based memristive devices are examined at cryogenic temperatures. Sub-stoichiometric Nb$_\mathrm{2}$O$_\mathrm{5}$ was deposited via magnetron sputtering and patterned in microscale (2$\times$2 - 15$\times$15 $μ$m$^2$) cross-bar Au/Ru/NbO$_\mathrm{x}$/Pt devices and electroformed at 3-5 V to make NbO$_\mathrm{2}$ filaments. At cryogenic temperatures, the threshold voltage ($V_\mathrm{th}$) increased by more than a factor of 3. The hold voltage ($V_\mathrm{h}$) was significantly lower than the threshold voltage for fast voltage sweeps (200 ms per measurement). If the sample is allowed to cool between voltage measurements, the hold voltage increases, but never reaches the threshold voltage, indicating the presence of non-volatile Nb$_\mathrm{2}$O$_\mathrm{5}$ in the filament. The devices have an activation energy of $E_a \approx 1.4$ eV, lower than other NbO$_\mathrm{2}$ devices reported. Our works shows that even nominally ``bad" memristive devices can be improved by reducing the leakage current and increases the sample resistance at cryogenic temperatures.
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Submitted 12 August, 2024;
originally announced August 2024.
Measurement of the Crystallization and Phase Transition of Niobium Dioxide Thin-Films for Neuromorphic Computing Applications Using a Tube Furnace Optical Transmission System
Authors:
Zachary R. Robinson,
Karsten Beckmann,
James Michels,
Vincent Daviero,
Elizabeth A. Street,
Fiona Lorenzen,
Matthew C. Sullivan,
Nathaniel Cady,
Alexander Kozen,
Marc Currie
Abstract:
Significant research has focused on low-power stochastic devices built from memristive materials. These devices foster neuromorphic approaches to computational efficiency enhancement in merged biomimetic and CMOS architectures due to their ability to phase transition from a dielectric to a metal at an increased temperature. Niobium dioxide has a volatile memristive phase change that occurs $\sim$8…
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Significant research has focused on low-power stochastic devices built from memristive materials. These devices foster neuromorphic approaches to computational efficiency enhancement in merged biomimetic and CMOS architectures due to their ability to phase transition from a dielectric to a metal at an increased temperature. Niobium dioxide has a volatile memristive phase change that occurs $\sim$800$^\circ$C~that makes it an ideal candidate for future neuromorphic electronics. A straightforward optical system has been developed on a horizontal tube furnace for \emph{in situ} spectral measurements as an as-grown \NbtOf\ film is annealed and ultimately crystallizes as \NbOt. The system measures the changing spectral transmissivity of \NbtOf\ as it undergoes both reduction and crystallization processes. We were also able to measure the transition from metallic-to-non-metallic \NbOt\ during the cooldown phase, which is shown to occur about 100$^\circ$C~ lower on a sapphire substrate than fused silica. After annealing, the material properties of the \NbtOf\ and \NbOt\ were assessed via X-ray photoelectron spectroscopy, X-ray diffraction, and 4-point resistivity, confirming that we have made crystalline \NbOt.
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Submitted 11 July, 2024; v1 submitted 19 June, 2024;
originally announced June 2024.
