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Thermal analysis of GaN-based photonic membranes for optoelectronics
Authors:
Wilken Seemann,
Mahmoud Elhajhasan,
Julian Themann,
Katharina Dudde,
Guillaume Würsch,
Jana Lierath,
Joachim Ciers,
Åsa Haglund,
Nakib H. Protik,
Giuseppe Romano,
Raphaël Butté,
Jean-François Carlin,
Nicolas Grandjean,
Gordon Callsen
Abstract:
Semiconductor membranes find their widespread use in various research fields targeting medical, biological, environmental, and optical applications. Often such membranes derive their functionality from an inherent nanopatterning, which renders the determination of their, e.g., optical, electronic, mechanical, and thermal properties a challenging task. In this work we demonstrate the non-invasive,…
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Semiconductor membranes find their widespread use in various research fields targeting medical, biological, environmental, and optical applications. Often such membranes derive their functionality from an inherent nanopatterning, which renders the determination of their, e.g., optical, electronic, mechanical, and thermal properties a challenging task. In this work we demonstrate the non-invasive, all-optical thermal characterization of around 800-nm-thick and 150-$μ$m-wide membranes that consist of wurtzite GaN and a stack of In$_{0.15}$Ga$_{0.85}$N quantum wells as a built-in light source. Due to their application in photonics such membranes are bright light emitters, which challenges their non-invasive thermal characterization by only optical means. As a solution, we combine two-laser Raman thermometry with (time-resolved) photoluminescence measurements to extract the in-plane (i.e., $c$-plane) thermal conductivity $κ_{\text{in-plane}}$ of our membranes. Based on this approach, we can disentangle the entire laser-induced power balance during our thermal analysis, meaning that all fractions of reflected, scattered, transmitted, and reemitted light are considered. As a result of our thermal imaging via Raman spectroscopy, we obtain $κ_{\text{in-plane}}\,=\,165^{+16}_{-14}\,$Wm$^{-1}$K$^{-1}$ for our best membrane, which compares well to our simulations yielding $κ_{\text{in-plane}}\,=\,177\,$Wm$^{-1}$K$^{-1}$ based on an ab initio solution of the linearized phonon Boltzmann transport equation. Our work presents a promising pathway towards thermal imaging at cryogenic temperatures, e.g., when aiming to elucidate experimentally different phonon transport regimes via the recording of non-Fourier temperature distributions.
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Submitted 16 October, 2024;
originally announced October 2024.
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Sub-20 kHz low frequency noise near ultraviolet miniature external cavity laser diode
Authors:
R Kervazo,
A Congar,
G Perin,
L Lablonde,
R Butté,
N Grandjean,
L Bodiou,
J Charrier,
S Trebaol
Abstract:
We present a compact InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV range and a side-mode suppression ratio reaching up to 40 dB accompanied by a mW-level output power. Furthermore, the properties of the FBG, including its central wavelen…
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We present a compact InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV range and a side-mode suppression ratio reaching up to 40 dB accompanied by a mW-level output power. Furthermore, the properties of the FBG, including its central wavelength, bandwidth, and reflectivity, can be readily customized to fulfill specific requirements. As a result, the small footprint design of this laser is compatible with integration into a standard butterfly package to ease the lab-to-market technology transfer. The combination of low frequency noise and fibered output signal positions these FBG laser systems as strong candidates for hybridization with integrated photonic platforms tailored for quantum information processing and metrology.
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Submitted 24 May, 2024;
originally announced May 2024.
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Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry
Authors:
Mahmoud Elhajhasan,
Wilken Seemann,
Katharina Dudde,
Daniel Vaske,
Gordon Callsen,
Ian Rousseau,
Thomas F. K. Weatherley,
Jean-François Carlin,
Raphaël Butté,
Nicolas Grandjean,
Nakib H. Protik,
Giuseppe Romano
Abstract:
We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking micro-photoluminescence ($μ$PL) spectroscopy with Raman thermometry, we demonstrate how a robust value for the thermal conductivity $κ$ can be obtained using only optical, non-invasive means. For this, we consider the balance of different co…
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We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking micro-photoluminescence ($μ$PL) spectroscopy with Raman thermometry, we demonstrate how a robust value for the thermal conductivity $κ$ can be obtained using only optical, non-invasive means. For this, we consider the balance of different contributions to thermal transport given by, e.g., excitons, charge carriers, and heat carrying phonons. Further complication is given by the fact that this membrane is made from direct bandgap semiconductors, designed to emit light based on an In$_{x}$Ga$_{1-x}$N ($x=0.15$) quantum well embedded in GaN. To meet these challenges, we designed a novel experimental setup that enables the necessary optical and thermal characterizations in parallel. We perform micro-Raman thermometry, either based on a heating laser that acts as a probe laser (1-laser Raman thermometry), or based on two lasers, providing the heating and the temperature probe separately (2-laser Raman thermometry). For the latter technique, we obtain temperature maps over tens of micrometers with a spatial resolution less than $1\,μ\text{m}$, yielding $κ\,=\,95^{+11}_{-7}\,\frac{\text{W}}{\text{m}\cdot \text{K}}$ for the $\textit{c}$-plane of our $\approx\,250\text{-nm}$-thick membrane at around room temperature, which compares well to our $\textit{ab initio}$ calculations applied to a simplified structure. Based on these calculations, we explain the particular relevance of the temperature probe volume, as quasi-ballistic transport of heat-carrying phonons occurs on length scales beyond the penetration depths of the heating laser and even its focus spot radius. The present work represents a significant step towards non-invasive, highly spatially resolved, and still quantitative thermometry performed on a photonic membrane.
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Submitted 8 March, 2024; v1 submitted 29 June, 2023;
originally announced June 2023.
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Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Authors:
Anthonin Delphan,
Maxim N. Makhonin,
Tommi Isoniemi,
Paul M. Walker,
Maurice S. Skolnick,
Dmitry N. Krizhanovskii,
Dmitry V. Skryabin,
Jean-François Carlin,
Nicolas Grandjean,
Raphaël Butté
Abstract:
Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature. Stimulated polariton relaxation into multipl…
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Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature. Stimulated polariton relaxation into multiple ring resonator modes is observed, which exhibit threshold-like dependence of the emission intensity with pulse energy. The strong exciton-photon coupling regime is confirmed by the significant reduction of the free spectral range with energy and the blueshift of the exciton-like modes with increasing pulse energy. Importantly, the exciton emission shows no broadening with power, further confirming that lasing is observed at electron-hole densities well below the Mott transition. Overall, our work paves the way towards development of novel UV devices based on the high-speed slab waveguide polariton geometry operating up to room temperature with potential to be integrated into complex photonic circuits.
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Submitted 28 October, 2022;
originally announced October 2022.
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Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
Authors:
Johann Stachurski,
Sebastian Tamariz,
Gordon Callsen,
Raphaël Butté,
Nicolas Grandjean
Abstract:
III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/AlN QDs for temperatures ranging from 5 to 300K. We carefully track the photoluminescence of a single QD and measure an optimum single photon purity of g(2)(0) = 0.05+-0.…
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III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/AlN QDs for temperatures ranging from 5 to 300K. We carefully track the photoluminescence of a single QD and measure an optimum single photon purity of g(2)(0) = 0.05+-0.02 at 5 K and 0.17+-0.8 at 300 K. We complement this study with temperaturedependent time-resolved photoluminescence measurements (TRPL) performed on a QD ensemble to further investigate the exciton recombination dynamics of such polar zero-dimensional nanostructures. By comparing our results to past reports, we emphasize the complexity of recombination processes in this system. Instead of the more conventional mono-exponential decay typical of exciton recombination, TRPL transients display a bi-exponential feature with short- and long-lived components that persist in the low excitation regime. From the temperature insensitivity of the long-lived excitonic component, we first discard the interplay of dark-to-bright state refilling in the exciton recombination process. Besides, this temperature-invariance also highlights the absence of nonradiative exciton recombinations, a likely direct consequence of the strong carrier confinement observed in GaN/AlN QDs up to 300K. Overall, our results support the viability of these dots as a potential single-photon source for quantum applications at room temperature.
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Submitted 3 February, 2022;
originally announced February 2022.
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Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature
Authors:
Davide Maria Di Paola,
Paul M. Walker,
Ruggero P. A. Emmanuele,
Alexey V. Yulin,
Joachim Ciers,
Zaffar Zaidi,
Jean-François Carlin,
Nicolas Grandjean,
Ivan Shelykh,
Maurice S. Skolnick,
R. Butté,
Dmitry N. Krizhanovskii
Abstract:
Ultrafast nonlinear photonics enables a host of applications in advanced on-chip spectroscopy and information processing. These rely on a strong intensity dependent (nonlinear) refractive index capable of modulating optical pulses on sub-picosecond timescales and on length scales suitable for integrated photonics. Currently there is no platform that can provide this for the UV spectral range where…
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Ultrafast nonlinear photonics enables a host of applications in advanced on-chip spectroscopy and information processing. These rely on a strong intensity dependent (nonlinear) refractive index capable of modulating optical pulses on sub-picosecond timescales and on length scales suitable for integrated photonics. Currently there is no platform that can provide this for the UV spectral range where broadband spectra generated by nonlinear modulation can pave the way to new on-chip ultrafast (bio-) chemical spectroscopy devices. We demonstrate the giant nonlinearity of UV hybrid light-matter states (exciton-polaritons) up to room temperature in an AlInGaN waveguide. We experimentally measure ultrafast nonlinear spectral broadening of UV pulses in a compact 100 $μ$m long device and deduce a nonlinearity 1000 times that in common UV nonlinear materials and comparable to non-UV polariton devices. Our demonstration promises to underpin a new generation of integrated UV nonlinear light sources for advanced spectroscopy and measurement.
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Submitted 22 June, 2021; v1 submitted 4 September, 2020;
originally announced September 2020.
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Propagating Polaritons in III-Nitride Slab Waveguides
Authors:
Joachim Ciers,
Jonas G. Roch,
Jean-François Carlin,
Gwénolé Jacopin,
Raphaël Butté,
Nicolas Grandjean
Abstract:
We report on III-nitride waveguides with c-plane GaN/AlGaN quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal mode splitting as large as 60 meV at low temperatures thanks to the large overlap between the optical mode and the active region, a polariton decay length up to 100 $μ$m for photon-like polaritons and lifetime of 1-2 ps; with t…
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We report on III-nitride waveguides with c-plane GaN/AlGaN quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal mode splitting as large as 60 meV at low temperatures thanks to the large overlap between the optical mode and the active region, a polariton decay length up to 100 $μ$m for photon-like polaritons and lifetime of 1-2 ps; with the latter values being essentially limited by residual absorption occurring in the waveguide. The fully lattice-matched nature of the structure allows for very low disorder and high in-plane homogeneity; an important asset for the realization of polaritonic integrated circuits that could support nonlinear polariton wavepackets up to room temperature thanks to the large exciton binding energy of 40 meV.
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Submitted 8 December, 2016;
originally announced December 2016.
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Gallium nitride L3 photonic crystal cavities with an average quality factor of 16,900 in the near infrared
Authors:
Noelia Vico Triviño,
Momchil Minkov,
Giulia Urbinati,
Matteo Galli,
Jean-François Carlin,
Raphaël Butté,
Vincenzo Savona,
Nicolas Grandjean
Abstract:
Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal slab. The cavities are based on the popular L3 design, which was optimized using an automated process based on a genetic algorithm, in order to maximize the quality factor. Optical characterization of several individual cavity replicas resulted in an average unloaded quality factor Q = 16,900 at the reso…
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Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal slab. The cavities are based on the popular L3 design, which was optimized using an automated process based on a genetic algorithm, in order to maximize the quality factor. Optical characterization of several individual cavity replicas resulted in an average unloaded quality factor Q = 16,900 at the resonant wavelength λ $\sim 1.3$ μm, with a maximal measured Q value of 22,500. The statistics of both the quality factor and the resonant wavelength are well explained by first-principles simulations including fabrication disorder and background optical absorption.
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Submitted 24 November, 2014;
originally announced November 2014.
