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Extreme Terahertz Nonlinearity of AlGaN/GaN-based Grating-Gate Plasmonic Crystals
Authors:
Pavlo Sai,
Vadym V. Korotyeyev,
Dmytro B. But,
Maksym Dub,
Dmitriy Yavorskiy,
Jerzy Łusakowski,
Mateusz Słowikowski,
Serhii Kukhtaruk,
Yurii Liashchuk,
Jeong Woo Han,
Christoph Böttger,
Alexej Pashkin,
Stephan Winnerl,
Wojciech Knap,
Martin Mittendorff
Abstract:
We present a novel approach to enhance THz nonlinearity by the resonant excitation of two-dimensional plasmons in grating-gate plasmonic crystals. Using a high-electric-field THz pump-THz probe technique, we investigate the nonlinear interaction of spectrally narrow THz pulses with plasmon oscillations in a two-dimensional electron gas on an AlGaN/GaN interface integrated with metallic grating. No…
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We present a novel approach to enhance THz nonlinearity by the resonant excitation of two-dimensional plasmons in grating-gate plasmonic crystals. Using a high-electric-field THz pump-THz probe technique, we investigate the nonlinear interaction of spectrally narrow THz pulses with plasmon oscillations in a two-dimensional electron gas on an AlGaN/GaN interface integrated with metallic grating. Nonlinear effects are observed as ultrafast, pump-induced changes in THz transmission, with relative transparency strongly dependent on plasmonic mode excitation and saturating at pump fluences of about 200 nJ cm-2. The maximal relative transparency, reaching 45 % at 350 nJ cm -2, occurs under resonant excitation of a localized plasmon mode at the strong electrostatic modulation of 2DEG concentration. Transient dynamics reveal ultrafast relaxation times of 15-20 ps, while the effects can be observed at elevated temperatures of up to 150 K. A nonlinear model of plasmonic crystal, based on finite-difference time-domain electrodynamic simulations coupled with viscous hydrodynamic electron transport model, elucidates key nonlinear mechanisms, including near-field effects under metallic gratings, electron heating, plasmon resonance broadening, and redshift. These results demonstrate that even conventional semiconductors such as AlGaN/GaN can achieve nonlinear THz responses comparable to or exceeding those of graphene, showing strong potential for ultrafast THz modulation and nonlinear photonics applications.
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Submitted 4 March, 2025;
originally announced March 2025.
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Si Superstrate Lenses on Patch-Antenna-Coupled TeraFETs: NEP Optimization and Frequency Fine-Tuning
Authors:
Anastasiya Krysl,
Dmytro B. But,
Kęstutis Ikamas,
Jakob Holstein,
Anna Shevchik-Shekera,
Hartmut G. Roskos,
Alvydas Lisauskas
Abstract:
This paper presents a study on performance optimization and resonant frequency modification of terahertz detectors by the use of hyper-hemispherical silicon superstrate lenses. The detectors are patch-TeraFETs, i.e., field-effect transistors with monolithically integrated patch antennas fabricated with a commercial 65-nm CMOS foundry process and designed for an operation frequency of 580 GHz. We d…
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This paper presents a study on performance optimization and resonant frequency modification of terahertz detectors by the use of hyper-hemispherical silicon superstrate lenses. The detectors are patch-TeraFETs, i.e., field-effect transistors with monolithically integrated patch antennas fabricated with a commercial 65-nm CMOS foundry process and designed for an operation frequency of 580 GHz. We demonstrate a strong improvement of the optical noise-equivalent power optical NEP, referenced against the total radiation power) reaching a value of 16 pW/Hz^(1/2). We show, furthermore, that the resonance frequency can be efficiently fine-tuned by the choice of the material and the thickness of a dielectric layer placed between the transistor and the superstrate lens. The resonance frequency can be shifted by more than 15 % of the center frequency (up to 100 GHz for the 580 GHz devices). The design of the on-chip optics can be employed for post-fabrication tailoring of the detector's resonance frequency to target specific spectral positions.
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Submitted 11 April, 2024;
originally announced April 2024.
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Strong transient magnetic fields induced by THz-driven plasmons in graphene disks
Authors:
Jeong Woo Han,
Pavlo Sai,
Dmytro But,
Ece Uykur,
Stephan Winnerl,
Gagan Kumar,
Matthew L. Chin,
Rachael L. Myers-Ward,
Matthew T. Dejarld,
Kevin M. Daniels,
Thomas E. Murphy,
Wojciech Knap,
Martin Mittendorff
Abstract:
Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect. While these effects rely on material properties that can be tailored only to a limited degree, plasmonic resonances can be fully controlled by choosing proper dimensions and carri…
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Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect. While these effects rely on material properties that can be tailored only to a limited degree, plasmonic resonances can be fully controlled by choosing proper dimensions and carrier concentrations. Plasmon resonances provide new degrees of freedom that can be used to tune or enhance the light-induced magnetic field in engineered metamaterials. Here we employ graphene disks to demonstrate light-induced transient magnetic fields from a plasmonic circular current with extremely high efficiency. The effective magnetic field at the plasmon resonance frequency of the graphene disks (3.5 THz) is evidenced by a strong (~1°) ultrafast Faraday rotation (~ 20 ps). In accordance with reference measurements and simulations, we estimated the strength of the induced magnetic field to be on the order of 0.7 T under a moderate pump fluence of about 440 nJ cm-2.
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Submitted 10 July, 2023;
originally announced July 2023.
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Electrical Tuning of Terahertz Plasmonic Crystal Phases
Authors:
P. Sai,
V. V. Korotyeyev,
M. Dub,
M. Słowikowski,
M. Filipiak,
D. B. But,
Yu. Ivonyak,
M. Sakowicz,
Yu. M. Lyaschuk,
S. M. Kukhtaruk,
G. Cywiński,
W. Knap
Abstract:
We present an extensive study of resonant two-dimensional (2D) plasmon excitations in grating-gated quantum well heterostructures, which enable an electrical control of periodic charge carrier density profile. Our study combines theoretical and experimental investigations of nanometer-scale AlGaN/GaN grating-gate structures and reveals that all terahertz (THz) plasmonic resonances in these structu…
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We present an extensive study of resonant two-dimensional (2D) plasmon excitations in grating-gated quantum well heterostructures, which enable an electrical control of periodic charge carrier density profile. Our study combines theoretical and experimental investigations of nanometer-scale AlGaN/GaN grating-gate structures and reveals that all terahertz (THz) plasmonic resonances in these structures can be explained only within the framework of the plasmonic crystal model. We identify two different plasmonic crystal phases. The first is the delocalized phase, where THz radiation interacts with the entire grating-gate structure that is realized at a weakly modulated 2D electron gas (2DEG) regime. In the second, the localized phase, THz radiation interacts only with the ungated portions of the structure. This phase is achieved by fully depleting the gated regions, resulting in strong modulation. By gate-controlling of the modulation degree, we observe a continuous transition between these phases. We also discovered that unexpectedly the resonant plasma frequencies of ungated parts (in the localized phase) still depend on the gate voltage. We attribute this phenomenon to the specific depletion of the conductive profile in the ungated region of the 2DEG, the so-called edge gating effect. Although we study a specific case of plasmons in AlGaN/GaN grating-gate structures, our results have a general character and are applicable to any other semiconductor-based plasmonic crystal structures. Our work represents the first demonstration of an electrically tunable transition between different phases of THz plasmonic crystals, which is a crucial step towards a deeper understanding of THz plasma physics and the development of all-electrically tunable devices for THz optoelectronics.
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Submitted 6 May, 2023; v1 submitted 29 April, 2023;
originally announced May 2023.
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Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures
Authors:
Stephane Boubanga-Tombet,
Wojciech Knap,
Deepika Yadav,
Akira Satou,
Dmytro B. But,
Vyacheslav V. Popov,
Ilya V. Gorbenko,
Valentin Kachorovskii,
Taiichi Otsuji
Abstract:
We report on experimental studies of terahertz (THz) radiation transmission through grating-gate graphene-channel transistor nanostructures and demonstrate room temperature THz radiation amplification stimulated by current-driven plasmon excitations. Specifically, with increase of the direct current (dc) under periodic charge density modulation, we observe a strong red shift of the resonant THz pl…
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We report on experimental studies of terahertz (THz) radiation transmission through grating-gate graphene-channel transistor nanostructures and demonstrate room temperature THz radiation amplification stimulated by current-driven plasmon excitations. Specifically, with increase of the direct current (dc) under periodic charge density modulation, we observe a strong red shift of the resonant THz plasmon absorption, its complete bleaching, followed by the amplification and blue shift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. We present a simple model allowing for the phenomenological description of the observed amplification phenomena. This model shows that in the presence of dc current the radiation-induced correction to dissipation is sensitive to the phase shift between THz oscillations of carrier density and drift velocity, and with increase of the current becomes negative, leading to amplification. The experimental results of this work as all obtained at room temperature, pave the way towards the new 2D plasmons based, voltage tuneable THz radiation amplifiers.
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Submitted 11 June, 2020; v1 submitted 21 March, 2020;
originally announced March 2020.
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Symmetry breaking and circular photogalvanic effect in epitaxial Cd$_x$Hg$_{1-x}$Te films
Authors:
S. Hubmann,
G. V. Budkin,
M. Otteneder,
D. But,
D. Sacré,
I. Yahniuk,
K. Diendorfer,
V. V. Bel'kov,
D. A. Kozlov,
N. N. Mikhailov,
S. A. Dvoretsky,
V. S. Varavin,
V. G. Remesnik,
S. A. Tarasenko,
W. Knap,
S. D. Ganichev
Abstract:
We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende…
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We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments, therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low Cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with non-inverted band structure. We suggest that strain is a reason of the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation.
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Submitted 5 November, 2019;
originally announced November 2019.
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Time resolution and dynamic range of field effect transistor based terahertz detectors
Authors:
Przemyslaw Zagrajek,
Sergey N. Danilov,
Jacek Marczewski,
Michal Zaborowski,
Cezary Kolacinski,
Dariusz Obrebski,
Pawel Kopyt,
Bartlomiej Salski,
Dmytro But,
Wojciech Knap,
Sergey D. Ganichev
Abstract:
We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and GaAs-based high electron mobility transistors detectors. Applying monochromatic radiation of high power, pulsed, line-tunable molecular THz laser, which operated at…
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We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and GaAs-based high electron mobility transistors detectors. Applying monochromatic radiation of high power, pulsed, line-tunable molecular THz laser, which operated at frequencies in the range from 0.6-3.3 THz, we demonstrated that all these detectors have at least nanosecond response time. We showed that detectors yield a linear response in a wide range of radiation power. At high powers the response saturates varying with radiation power P as $U = R_0 P/(1+P/P_s)$, where $R_0$ is the low power responsivity, $P_s$ is the saturation power. We demonstrated that the linear part response decreases with radiation frequency increase as $R_0 \propto f^{-3}$, whereas the power at which signal saturates increases as $P_s \propto f^3$. We discussed the observed dependences in the framework of the Dyakonov-Shur mechanism and detector-antenna impedance matching. Our study showed that FET transistors can be used as ultrafast room temperature detectors of THz radiation and that their dynamic range extends over many orders of magnitude of power of incoming THz radiation. Therefore, when embedded with current driven read out electronics they are very well adopted for operation with high power pulsed sources.
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Submitted 21 May, 2019;
originally announced May 2019.
