Toward Phonon-Limited Transport in Two-Dimensional Electronics by Oxygen-Free Fabrication
Authors:
Subhrajit Mukherjee,
Shuhua Wang,
Dasari Venkatakrishnarao,
Yaoju Tarn,
Teymour Talha-Dean,
Rainer Lee,
Ivan A. Verzhbitskiy,
Ding Huang,
Abhishek Mishra,
John Wellington John,
Sarthak Das,
Fabio Bussoloti,
Thathsara D. Maddumapatabandi,
Yee Wen Teh,
Yee Sin Ang,
Kuan Eng Johnson Goh,
Chit Siong Lau
Abstract:
Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental performance still lags theoretical expectations. Here, we develop an oxygen-free approach to push the electrical transport of 2D field-effect transistors toward the theo…
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Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental performance still lags theoretical expectations. Here, we develop an oxygen-free approach to push the electrical transport of 2D field-effect transistors toward the theoretical phonon-limited intrinsic mobility. We achieve record carrier mobilities of 91 (132) cm2V-1s-1 for mono- (bi-) layer MoS2 transistors on SiO2 substrate. Statistics from over 60 devices confirm that oxygen-free fabrication enhances key figures of merit by more than an order of magnitude. While previous studies suggest that 2D transition metal dichalcogenides such as MoS2 and WS2 are stable in air, we show that short-term ambient exposure can degrade their device performance through irreversible oxygen chemisorption. This study emphasizes the criticality of avoiding oxygen exposure, offering guidance for device manufacturing for fundamental research and practical applications of 2D materials.
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Submitted 12 September, 2024;
originally announced September 2024.
