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A Framework for Evaluating PM2.5 Forecasts from the Perspective of Individual Decision Making
Authors:
Renato Berlinghieri,
David R. Burt,
Paolo Giani,
Arlene M. Fiore,
Tamara Broderick
Abstract:
Wildfire frequency is increasing as the climate changes, and the resulting air pollution poses health risks. Just as people routinely use weather forecasts to plan their activities around precipitation, reliable air quality forecasts could help individuals reduce their exposure to air pollution. In the present work, we evaluate several existing forecasts of fine particular matter (PM2.5) within th…
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Wildfire frequency is increasing as the climate changes, and the resulting air pollution poses health risks. Just as people routinely use weather forecasts to plan their activities around precipitation, reliable air quality forecasts could help individuals reduce their exposure to air pollution. In the present work, we evaluate several existing forecasts of fine particular matter (PM2.5) within the continental United States in the context of individual decision-making. Our comparison suggests there is meaningful room for improvement in air pollution forecasting, which might be realized by incorporating more data sources and using machine learning tools. To facilitate future machine learning development and benchmarking, we set up a framework to evaluate and compare air pollution forecasts for individual decision making. We introduce a new loss to capture decisions about when to use mitigation measures. We highlight the importance of visualizations when comparing forecasts. Finally, we provide code to download and compare archived forecast predictions.
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Submitted 9 September, 2024;
originally announced September 2024.
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Distributed network of optically pumped magnetometers for space weather monitoring
Authors:
M. S. Mrozowski,
A. S. Bell,
P. F. Griffin,
D. Hunter,
D. Burt,
J. P. McGilligan,
E. Riis,
C. Beggan,
S. J. Ingleby
Abstract:
Spatial variation in the intensity of magnetospheric and ionospheric fluctuation during solar storms creates ground-induced currents, of importance in both infrastructure engineering and geophysical science. This activity is currently measured using a network of ground-based magnetometers, typically consisting of extensive installations at established observatory sites. We show that this network c…
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Spatial variation in the intensity of magnetospheric and ionospheric fluctuation during solar storms creates ground-induced currents, of importance in both infrastructure engineering and geophysical science. This activity is currently measured using a network of ground-based magnetometers, typically consisting of extensive installations at established observatory sites. We show that this network can be enhanced by the addition of remote quantum magnetometers which combine high sensitivity with intrinsic calibration. These nodes utilize scalable hardware and run independently of wired communication and power networks. We demonstrate that optically pumped magnetometers, utilizing mass-produced and miniaturized components, offer a single scalable sensor with the sensitivity and stability required for space weather observation. We describe the development and deployment of an off-grid magnetic sensing node, powered by a solar panel, present observed data from periods of low and high geomagnetic activity, and compare it to existing geomagnetic observatories.
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Submitted 22 July, 2024;
originally announced July 2024.
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Longitudinal spin-relaxation optimization for miniaturized optically pumped magnetometers
Authors:
A. P. McWilliam,
S. Dyer,
D. Hunter,
M. Mrozowski,
S. J. Ingleby,
O. Sharp,
D. P. Burt,
P. F. Griffin,
J. P. McGilligan,
E. Riis
Abstract:
The microfabrication of cesium vapor cells for optically pumped magnetometry relies on optimization of buffer gas pressure in order to maximize atomic coherence time and sensitivity to external magnetic signals. We demonstrate post-bond nitrogen buffer gas pressure tuning through localized heating of an integrated micro-pill dispenser. We characterize the variation in the intrinsic longitudinal re…
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The microfabrication of cesium vapor cells for optically pumped magnetometry relies on optimization of buffer gas pressure in order to maximize atomic coherence time and sensitivity to external magnetic signals. We demonstrate post-bond nitrogen buffer gas pressure tuning through localized heating of an integrated micro-pill dispenser. We characterize the variation in the intrinsic longitudinal relaxation rate, $γ_{10}$, and magnetic sensitivity, as a function of the resulting nitrogen buffer gas pressure. Measurements are conducted through employing an optically pumped magnetometer operating in a free-induction-decay configuration. $γ_{10}$ is extracted across a range of nitrogen pressures between $\sim$~60~-~700~Torr, measuring a minimum of 140~Hz at 115~Torr. Additionally, we achieve sensitivities as low as 130 ~fT/$\sqrt{\text{Hz}}$ at a bias field amplitude of $\sim 50~μ$T. With the optimal nitrogen buffer gas pressure now quantified and achievable post-fabrication, these mass-producible cells can be tailored to suit a variety of sensing applications, ensuring peak magnetometer performance.
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Submitted 3 July, 2024; v1 submitted 27 June, 2024;
originally announced June 2024.
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Real-time buffer gas pressure tuning in a micro-machined vapor cell
Authors:
S. Dyer,
A. McWilliam,
D. Hunter,
S. Ingleby,
D. P. Burt,
O. Sharp,
F. Mirando,
P. F. Griffin,
E. Riis,
J. P. McGilligan
Abstract:
We demonstrate a controllable depletion of the nitrogen buffer gas pressure in a micro-machined cesium (Cs) vapor cell from the dynamic heating of an alkali dispenser pill. When the alkali source is laser activated, the gettering compounds within the alkali pill dispenser reduce the nitrogen (N$_2$) content from the vapor for fine-tuning of the alkali to buffer gas pressure ratio. Additionally, we…
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We demonstrate a controllable depletion of the nitrogen buffer gas pressure in a micro-machined cesium (Cs) vapor cell from the dynamic heating of an alkali dispenser pill. When the alkali source is laser activated, the gettering compounds within the alkali pill dispenser reduce the nitrogen (N$_2$) content from the vapor for fine-tuning of the alkali to buffer gas pressure ratio. Additionally, we decrease the buffer gas pressure below 100$\,$mTorr to evaluate the presence of other potential broadening mechanisms. Real-time control of the gas pressure ratio in the vapor cell will have notable benefits for refining atomic sensor performance and provide a routine to achieve various target pressures across a wafer bonded with a uniform back-filled buffer gas pressure.
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Submitted 12 April, 2023;
originally announced April 2023.
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Free-induction-decay magnetic field imaging with a microfabricated Cs vapor cell
Authors:
D. Hunter,
C. Perrella,
A. McWilliam,
J. P. McGilligan,
M. Mrozowski,
S. J. Ingleby,
P. F. Griffin,
D. Burt,
A. N. Luiten,
E. Riis
Abstract:
Magnetic field imaging is a valuable resource for signal source localization and characterization. This work reports an optically pumped magnetometer (OPM) based on the free-induction-decay (FID) protocol, that implements microfabricated cesium (Cs) vapor cell technology to visualize the magnetic field distributions resulting from various magnetic sources placed close to the cell. The slow diffusi…
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Magnetic field imaging is a valuable resource for signal source localization and characterization. This work reports an optically pumped magnetometer (OPM) based on the free-induction-decay (FID) protocol, that implements microfabricated cesium (Cs) vapor cell technology to visualize the magnetic field distributions resulting from various magnetic sources placed close to the cell. The slow diffusion of Cs atoms in the presence of a nitrogen (N$_{2}$) buffer gas enables spatially independent measurements to be made within the same vapor cell by translating a $175\,μ$m probe beam over the sensing area. For example, the OPM was used to record temporal and spatial information to reconstruct magnetic field distributions in one and two dimensions. The optimal magnetometer sensitivity was estimated to be 0.43$\,\mathrm{pT/\sqrt{Hz}}$ within a Nyquist limited bandwidth of $500\,$Hz. Furthermore, the sensor's dynamic range exceeds the Earth's field of approximately $50\,μ$T, which provides a framework for magnetic field imaging in unshielded environments.
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Submitted 29 September, 2023; v1 submitted 20 March, 2023;
originally announced March 2023.
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Gaussian processes at the Helm(holtz): A more fluid model for ocean currents
Authors:
Renato Berlinghieri,
Brian L. Trippe,
David R. Burt,
Ryan Giordano,
Kaushik Srinivasan,
Tamay Özgökmen,
Junfei Xia,
Tamara Broderick
Abstract:
Given sparse observations of buoy velocities, oceanographers are interested in reconstructing ocean currents away from the buoys and identifying divergences in a current vector field. As a first and modular step, we focus on the time-stationary case - for instance, by restricting to short time periods. Since we expect current velocity to be a continuous but highly non-linear function of spatial lo…
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Given sparse observations of buoy velocities, oceanographers are interested in reconstructing ocean currents away from the buoys and identifying divergences in a current vector field. As a first and modular step, we focus on the time-stationary case - for instance, by restricting to short time periods. Since we expect current velocity to be a continuous but highly non-linear function of spatial location, Gaussian processes (GPs) offer an attractive model. But we show that applying a GP with a standard stationary kernel directly to buoy data can struggle at both current reconstruction and divergence identification, due to some physically unrealistic prior assumptions. To better reflect known physical properties of currents, we propose to instead put a standard stationary kernel on the divergence and curl-free components of a vector field obtained through a Helmholtz decomposition. We show that, because this decomposition relates to the original vector field just via mixed partial derivatives, we can still perform inference given the original data with only a small constant multiple of additional computational expense. We illustrate the benefits of our method with theory and experiments on synthetic and real ocean data.
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Submitted 20 June, 2023; v1 submitted 20 February, 2023;
originally announced February 2023.
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Extended-SWIR GeSn LEDs with reduced footprint and power consumption
Authors:
Mahmoud R. M. Atalla,
Youngmin Kim,
Simone Assali,
Daniel Burt,
Donguk Nam,
Oussama Moutanabbir
Abstract:
CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myriad of applications in sensing and communications. In this regard, a group IV germanium-tin (GeSn) material epitaxially grown on silicon (Si) emerges as a promising platform to implement tunable infrared light emitters. I…
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CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myriad of applications in sensing and communications. In this regard, a group IV germanium-tin (GeSn) material epitaxially grown on silicon (Si) emerges as a promising platform to implement tunable infrared light emitters. Indeed, upon increasing the Sn content, the bandgap of GeSn narrows and becomes direct, making this material system suitable for developing an efficient silicon-compatible emitter. With this perspective, microbridge PIN GeSn LEDs with a small footprint of $1,520$ $μ$m$^2$ are demonstrated and their operation performance is investigated. The spectral analysis of the electroluminescence emission exhibits a peak at $2.31$ $μ$m and it red-shifts slightly as the driving current increases. It is found that the microbridge LED operates at a dissipated power as low as $10.8$ W at room temperature and just $3$ W at $80$ K. This demonstrated low operation power is comparable to that reported for LEDs having a significantly larger footprint reaching $10^6$ $μ$m$^2$. The efficient thermal dissipation of the current design helped to reduce the heat-induced optical losses, thus enhancing light emission. Further performance improvements are envisioned through thermal and optical simulations of the microbridge design. The use of GeSnOI substrate for developing a similar device is expected to improve optical confinement for the realization of electrically driven GeSn lasers.
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Submitted 12 February, 2023;
originally announced February 2023.
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Micro-machined deep silicon atomic vapor cells
Authors:
S. Dyer,
P. F. Griffin,
A. S. Arnold,
F. Mirando,
D. P. Burt,
E. Riis,
J. P. McGilligan
Abstract:
Using a simple and cost-effective water jet process, silicon etch depth limitations are overcome to realize a $6\,$mm deep atomic vapor cell. While the minimum silicon feature size was limited to a $1.5\,$mm width in these first generation vapor cells, we successfully demonstrate a two-chamber geometry by including a $\sim$25~mm meandering channel between the alkali pill chamber and main interroga…
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Using a simple and cost-effective water jet process, silicon etch depth limitations are overcome to realize a $6\,$mm deep atomic vapor cell. While the minimum silicon feature size was limited to a $1.5\,$mm width in these first generation vapor cells, we successfully demonstrate a two-chamber geometry by including a $\sim$25~mm meandering channel between the alkali pill chamber and main interrogation chamber. We evaluate the impact of the channel conductance on the introduction of alkali vapor density during the pill activation process, and mitigate glass damage and pill contamination near the main chamber. Finally, we highlight the improved signal achievable in the $6\,$mm silicon cell compared to standard $2\,$mm path length silicon vapor cells.
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Submitted 26 July, 2022;
originally announced July 2022.
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Second-harmonic generation in germanium-on-insulator from visible to telecom wavelengths
Authors:
Yadong Wang,
Daniel Burt,
Kunze Lu,
Donguk Nam
Abstract:
The second-order $χ^{2}$ process underpins many important nonlinear optical applications in the field of classical and quantum optics. Generally, the $χ^{2}$ process manifests itself only in a non-centrosymmetric dielectric medium via an anharmonic electron oscillation when driven by an intense optical field. Due to inversion symmetry, group-IV semiconductors like silicon (Si) and germanium (Ge) a…
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The second-order $χ^{2}$ process underpins many important nonlinear optical applications in the field of classical and quantum optics. Generally, the $χ^{2}$ process manifests itself only in a non-centrosymmetric dielectric medium via an anharmonic electron oscillation when driven by an intense optical field. Due to inversion symmetry, group-IV semiconductors like silicon (Si) and germanium (Ge) are traditionally not considered as ideal candidates for second-order nonlinear optics applications. Here, we report the experimental observation of the second-harmonic generation (SHG) in a Ge-on-insulator (GOI) sample under femtosecond optical pumping. Specially, we report the first-time measurement of the SHG signal from a GOI sample in the telecom S-band by pumping at $\sim$$3000$ nm.
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Submitted 12 April, 2022; v1 submitted 11 April, 2022;
originally announced April 2022.
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A simple imaging solution for chip-scale laser cooling
Authors:
A. Bregazzi,
P. F. Griffin,
A. S. Arnold,
D. P. Burt,
G. Martinez,
R. Boudot,
J. Kitching,
E. Riis,
J. P. McGilligan
Abstract:
We demonstrate a simple stacked scheme that enables absorption imaging through a hole in the surface of a grating magneto-optical trap (GMOT) chip, placed immediately below a micro-fabricated vacuum cell. The imaging scheme is capable of overcoming the reduced optical access and surface scatter that is associated with this chip-scale platform, while further permitting both trapping and imaging of…
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We demonstrate a simple stacked scheme that enables absorption imaging through a hole in the surface of a grating magneto-optical trap (GMOT) chip, placed immediately below a micro-fabricated vacuum cell. The imaging scheme is capable of overcoming the reduced optical access and surface scatter that is associated with this chip-scale platform, while further permitting both trapping and imaging of the atoms from a single incident laser beam. The through-hole imaging is used to characterise the impact of the reduced optical overlap volume of the GMOT in the chip-scale cell, with an outlook to an optimised atom number in low volume systems.
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Submitted 26 August, 2021;
originally announced August 2021.
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1D photonic crystal direct bandgap GeSn-on-insulator laser
Authors:
Hyo-Jun Joo,
Youngmin Kim,
Daniel Burt,
Yongduck Jung,
Lin Zhang,
Melvina Chen,
Samuel Jior Parluhutan,
Dong-Ho Kang,
Chulwon Lee,
Simone Assali,
Zoran Ikonic,
Oussama Moutanabbir,
Yong-Hoon Cho,
Chuan Seng Tan,
Donguk Nam
Abstract:
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active areas, which prevent the realization of densely integrated on-chip lasers operating at low power consumption. Here, we present a 1D photonic crystal (PC…
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GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active areas, which prevent the realization of densely integrated on-chip lasers operating at low power consumption. Here, we present a 1D photonic crystal (PC) nanobeam with a very small device footprint of 7 $μm^2$ and a compact active area of ~1.2 $μm^2$ on a high-quality GeSn-on-insulator (GeSnOI) substrate. We also report that the improved directness in our strain-free nanobeam lasers leads to a lower threshold density and a higher operating temperature compared to the compressive strained counterparts. The threshold density of the strain-free nanobeam laser is ~18.2 kW cm$^{ -2}$ at 4 K, which is significantly lower than that of the unreleased nanobeam laser (~38.4 kW cm$^{ -2}$ at 4 K). Lasing in the strain-free nanobeam device persists up to 90 K, whereas the unreleased nanobeam shows a quenching of the lasing at a temperature of 70 K. Our demonstration offers a new avenue towards developing practical group-IV light sources with high-density integration and low power consumption.
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Submitted 1 November, 2021; v1 submitted 13 August, 2021;
originally announced August 2021.
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Strain-relaxed GeSn-on-Insulator (GeSnOI) microdisks
Authors:
Daniel Burt,
Hyo-Jun Joo,
Yongduck Jung,
Youngmin Kim,
Yi-Chiau Huang,
Donguk Nam
Abstract:
GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve the lasing performance of GeSn lasers is to use a high Sn content, which improves the directness. Another popular approach is to use a low to moderate Sn content with either compressive strain relaxation or tensile strain engineering, but…
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GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve the lasing performance of GeSn lasers is to use a high Sn content, which improves the directness. Another popular approach is to use a low to moderate Sn content with either compressive strain relaxation or tensile strain engineering, but these strain engineering techniques generally require optical cavities to be suspended in air, which leads to poor thermal management. In this work, we develop a novel dual insulator GeSn-on-insulator (GeSnOI) material platform that is used to produce strain-relaxed GeSn microdisks stuck on a substrate. By undercutting only one insulating layer (i.e., Al2O3), we fabricate microdisks sitting on SiO2, which attain three key properties for a high-performance GeSn laser: removal of harmful compressive strain, decent thermal management, and excellent optical confinement. We believe that an increase in the Sn content of GeSn layers on our platform can allow achieving improved lasing performance.
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Submitted 3 August, 2021;
originally announced August 2021.
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Enhanced GeSn Microdisk Lasers Directly Released on Si
Authors:
Youngmin Kim,
Simone Assali,
Daniel Burt,
Yongduck Jung,
Hyo-Jun Joo,
Melvina Chen,
Zoran Ikonic,
Oussama Moutanabbir,
Donguk Nam
Abstract:
GeSn alloys are promising candidates for complementary metal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance. However, the suspended device configuration that has thus far been introduced to relax the strain is destined to limit heat dissipation, thus hindering the devi…
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GeSn alloys are promising candidates for complementary metal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance. However, the suspended device configuration that has thus far been introduced to relax the strain is destined to limit heat dissipation, thus hindering the device performance. Herein, we demonstrate that strain-free GeSn microdisk laser devices fully released on Si outperform the canonical suspended devices. This approach allows to simultaneously relax the limiting compressive strain while offering excellent thermal conduction. Optical simulations confirm that, despite a relatively small refractive index contrast between GeSn and Si, optical confinement in strain-free GeSn optical cavities on Si is superior to that in conventional strain-free GeSn cavities suspended in the air. Moreover, thermal simulations indicate a negligible temperature increase in our device. Conversely, the temperature in the suspended devices increases substantially reaching, for instance, 120 K at a base temperature of 75 K under the employed optical pumping conditions. Such improvements enable increasing the operation temperature by ~40 K and reducing the lasing threshold by 30%. This approach lays the groundwork to implement new designs in the quest for room temperature GeSn lasers on Si.
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Submitted 16 June, 2021;
originally announced June 2021.
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Stand-alone vacuum cell for compact ultracold quantum technologies
Authors:
Oliver S. Burrow,
Paul F. Osborn,
Edward Boughton,
Francesco Mirando,
David P. Burt,
Paul F. Griffin,
Aidan S. Arnold,
Erling Riis
Abstract:
Compact vacuum systems are key enabling components for cold atom technologies, facilitating extremely accurate sensing applications. There has been important progress towards a truly portable compact vacuum system, however size, weight and power consumption can be prohibitively large, optical access may be limited, and active pumping is often required. Here, we present a centilitre-scale ceramic v…
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Compact vacuum systems are key enabling components for cold atom technologies, facilitating extremely accurate sensing applications. There has been important progress towards a truly portable compact vacuum system, however size, weight and power consumption can be prohibitively large, optical access may be limited, and active pumping is often required. Here, we present a centilitre-scale ceramic vacuum chamber with He-impermeable viewports and an integrated diffractive optic, enabling robust laser cooling with light from a single polarization-maintaining fibre. A cold atom demonstrator based on the vacuum cell delivers $10^7$ laser-cooled $^{87}$Rb atoms per second, using minimal electrical power. With continuous Rb gas emission active pumping yields a $10^{-7}\,$mbar equilibrium pressure, and passive pumping stabilises to $3\times 10^{-6}\,$mbar, with a $17\,$day time constant. A vacuum cell, with no Rb dispensing and only passive pumping, has currently kept a similar pressure for more than \ch{500 days}. The passive-pumping vacuum lifetime is several years, estimated from short-term He throughput, with many foreseeable improvements. This technology enables wide-ranging mobilization of ultracold quantum metrology.
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Submitted 2 September, 2021; v1 submitted 19 January, 2021;
originally announced January 2021.
