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Extreme Ultraviolet-Excited Time-Resolved Luminescence Spectroscopy Using an Ultrafast Table-Top High-Harmonic Generation Source
Authors:
M. van der Geest,
N. Sadegh,
T. M. Meerwijk,
E. I. Wooning,
L. Wu,
R. Bloem,
S. Castellanos Ortega,
A. M. Brouwer,
P. M. Kraus
Abstract:
We present a table-top extreme ultraviolet (XUV) beamline for measuring time- and frequency-resolved XUV excited optical luminescence (XEOL) with additional femtosecond-resolution XUV transient absorption spectroscopy functionality. XUV pulses are generated via high-harmonic generation using a near-infrared pulse in a noble gas medium, and focused to excite luminescence from a solid sample. The lu…
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We present a table-top extreme ultraviolet (XUV) beamline for measuring time- and frequency-resolved XUV excited optical luminescence (XEOL) with additional femtosecond-resolution XUV transient absorption spectroscopy functionality. XUV pulses are generated via high-harmonic generation using a near-infrared pulse in a noble gas medium, and focused to excite luminescence from a solid sample. The luminescence is collimated and guided into a streak camera, where its spectral components are temporally resolved with picosecond temporal resolution. We time-resolve XUV excited luminescence and compare the results to luminescence decays excited at longer wavelengths for three different materials : (i) sodium salicylate, an often used XUV scintillator, (ii) fluorescent labeling molecule 4-carbazole benzoic acid (CB), and (iii) a zirconium metal oxo-cluster labeled with CB, which is a photoresist candidate for extreme-ultraviolet lithography. Our results establish time-resolved XEOL as a new technique to measure transient XUV-driven phenomena in solid-state samples, and identify decay mechanisms of molecules following XUV and soft-X-ray excitation.
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Submitted 1 November, 2021;
originally announced November 2021.
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XUV Induced Bleaching of a Tin Oxo Cage Photoresist Studied by High Harmonic Absorption Spectroscopy
Authors:
Najmeh Sadegh,
Maarten van der Geest,
Jarich Haitjema,
Filippo Campi,
Sonia Castellanos,
Peter M. Kraus,
Albert M. Brouwer
Abstract:
Inorganic molecular materials such as tin oxo cages are a promising generation of photoresists compatible with the demands of the recently developed Extreme UltraViolet (EUV) lithography technology. Therefore, a detailed understanding of the photon-induced reactions which occur in photoresists after exposure is important. We used XUV broadband laser pulses in the range of 25-40 eV from a table-top…
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Inorganic molecular materials such as tin oxo cages are a promising generation of photoresists compatible with the demands of the recently developed Extreme UltraViolet (EUV) lithography technology. Therefore, a detailed understanding of the photon-induced reactions which occur in photoresists after exposure is important. We used XUV broadband laser pulses in the range of 25-40 eV from a table-top high-harmonic source to expose thin films of the tin oxo cage resist to shed light on some of the photo-induced chemistry via XUV absorption spectroscopy. During the exposure, the transmitted spectra were recorded and a noticeable absorbance decrease was observed in the resist. Dill parameters were extracted to quantify the XUV induced conversion and compared to EUV exposure results at 92 eV. Based on the absorption changes, we estimate that approximately 60% of tin-carbon bonds are cleaved at the end of the exposure.
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Submitted 24 March, 2020;
originally announced March 2020.
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Patterning Sn-based EUV resists with low-energy electrons
Authors:
Ivan Bespalov,
Yu Zhang,
Jarich Haitjema,
Rudolf M. Tromp,
Sense Jan van der Molen,
Albert M. Brouwer,
Johannes Jobst,
Sonia Castellanos
Abstract:
Extreme Ultraviolet (EUV) lithography is the newest technology that will be used in the semiconductor industry for printing circuitry in the sub-20 nm scale. Low-energy electrons (LEEs) produced upon illumination of resist materials with EUV photons (92 eV) play a central role in the formation of the nanopatterns. However, up to now the details of this process are not well understood. In this work…
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Extreme Ultraviolet (EUV) lithography is the newest technology that will be used in the semiconductor industry for printing circuitry in the sub-20 nm scale. Low-energy electrons (LEEs) produced upon illumination of resist materials with EUV photons (92 eV) play a central role in the formation of the nanopatterns. However, up to now the details of this process are not well understood. In this work, a novel experimental approach that combines Low-Energy Electron Microscopy (LEEM), Electron Energy Loss Spectroscopy (EELS), and Atomic Force Microscopy (AFM) is used to study changes induced by electrons in the 0-40 eV range in thin films of molecular organometallic EUV resists known as tin-oxo cages. LEEM-EELS spectroscopic experiments were used to detect surface charging upon electron exposure and to estimate the electron landing energy. AFM post-exposure analyses revealed that irradiation of the resist with LEEs leads to the densification of the resist layer associated to carbon loss. The same chemical processes that yield densification render the solubility change responsible for the pattern formation in the lithographic application. Remarkably, electrons as low as 1.2 eV are able to induce chemical reactions in the Sn-based resist. Based on the thickness profiles resulting from LEE exposures in the 3-48 mC/cm 2 dose range, a simplified reaction model is proposed where the resist undergoes sequential chemical reactions, yielding first a sparsely cross-linked network, followed by the formation of a denser cross-linked network. This model allows us to estimate a maximum reaction volume on the initial material of 0.15 nm 3 per incident electron in the energy range studied, which means that less than 10 LEEs per molecule on average are needed to turn the material insoluble and thus render a pattern.
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Submitted 6 October, 2019;
originally announced October 2019.
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Monitoring the orientation of rare-earth-doped nanorods for flow shear tomography
Authors:
Jongwook Kim,
Sebastien Michelin,
Michiel Gilberts,
Lucio Martinelli,
Elodie Chaudan,
Gabriel Amselem,
Etienne Fradet,
Jean Pierre Boilot,
Albert M. Brouwer,
Charles N. Baroud,
Jacques Peretti,
Thierry Gacoin
Abstract:
Rare-earth phosphors exhibit unique luminescence polarization features originating from the anisotropic symmetry of the emitter ion's chemical environment. However, to take advantage of this peculiar property, it is necessary to control and measure the ensemble orientation of the host particles with a high degree of precision. Here, we show a methodology to obtain the photoluminescence polarizatio…
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Rare-earth phosphors exhibit unique luminescence polarization features originating from the anisotropic symmetry of the emitter ion's chemical environment. However, to take advantage of this peculiar property, it is necessary to control and measure the ensemble orientation of the host particles with a high degree of precision. Here, we show a methodology to obtain the photoluminescence polarization of Eu-doped LaPO4 nano rods assembled in an electrically modulated liquid-crystalline phase. We measure Eu3+ emission spectra for the three main optimal configurations (σ, π and α, depending on the direction of observation and the polarization axes) and use them as a reference for the nano rod orientation analysis. Based on the fact that flowing nano rods tend to orient along the shear strain profile, we use this orientation analysis to measure the local shear rate in a flowing liquid. The potential of this approach is then demonstrated through tomographic imaging of the shear rate distribution in a microfluidic system.
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Submitted 6 December, 2017;
originally announced December 2017.
