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High-efficiency position resolved gamma ray detectors for 2D-measurements of the angular correlation of annihilation radiation
Authors:
Kilian Brenner,
Francesco Guatieri,
Christoph Hugenschmidt
Abstract:
The measurement of the 2D-Angular Correlation of Electron Positron Annihilation Radiation (ACAR) provides unique information about the bulk electronic structure of single crystals. We set up a new prototype for 2D-ACAR measurements using two 24 x 24 (26.8 mm x 26.8 mm) pixelated LYSO scintillation crystals in combination with a glass light guide and 8 x 8 (24 mm x 24 mm) Multi Pixel Photon Counter…
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The measurement of the 2D-Angular Correlation of Electron Positron Annihilation Radiation (ACAR) provides unique information about the bulk electronic structure of single crystals. We set up a new prototype for 2D-ACAR measurements using two 24 x 24 (26.8 mm x 26.8 mm) pixelated LYSO scintillation crystals in combination with a glass light guide and 8 x 8 (24 mm x 24 mm) Multi Pixel Photon Counters (MPPCs). Compared to conventional Anger-cameras, typically comprising large NaI(Tl) scintillators read out with photomultiplier arrays a larger implementation of our prototype would drastically improve resolution and count rate by taking advantage of the small pixel size of the scintillator, its much higher attenuation coefficient for 511 keV γ-quanta and faster digital readout. With our prototype we achieved a detection efficiency of 45%, i.e. five times higher compared to NaI(Tl) used in our Anger cameras, leading to a 25 (!) times higher coincidence count rate in ACAR measurements. A spatial resolution of 1 mm was obtained, which is limited by the pixel size of the scintillator. We demonstrate the high performance of the setup by (i) imaging the local distribution of 22Na in a proton-irradiated aluminum target and (ii) determining the Fermi energy of Cu from 2D-ACAR spectra recorded for a polycrystalline copper sample.
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Submitted 20 December, 2024;
originally announced December 2024.
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Spatially-resolved charge detectors for particle beam optimization with femtoampere resolution achieved by in-vacuum signal preamplification
Authors:
Kilian Brenner,
Michael Zimmermann,
Maik Butterling,
Andreas Wagner,
Christoph Hugenschmidt,
Francesco Guatieri
Abstract:
We present the design of a Faraday cup-like charged particle detector in a four quadrant configuration aimed at facilitating the alignment of low-intensity beams of exotic particles. The device is capable of assessing the current on the electrodes with a resolution of 33fA within 15ms or a maximal resolution of 1.8fA with a measurement time of 12.4s. This performance is achieved by minimizing the…
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We present the design of a Faraday cup-like charged particle detector in a four quadrant configuration aimed at facilitating the alignment of low-intensity beams of exotic particles. The device is capable of assessing the current on the electrodes with a resolution of 33fA within 15ms or a maximal resolution of 1.8fA with a measurement time of 12.4s. This performance is achieved by minimizing the noise through a preamplification circuit installed in vacuum, as close as possible to the electrodes. We tested the detector with the positron beam of ELBE, achieving the nominal maximum resolution with high reproducibility. We then exploited the capabilities of the detector to resolve the two-dimensional shape of the beam, and revealed the presence of a weak electron beam being transported alongside the positrons. Characterization of the detector performance showed that in a variety of scenarios it can be used to quickly center positron beams thus allowing for the prompt optimization of beam transport.
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Submitted 10 February, 2024;
originally announced February 2024.
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Strain-Enhanced Mobility of Monolayer MoS2
Authors:
Isha M. Datye,
Alwin Daus,
Ryan W. Grady,
Kevin Brenner,
Sam Vaziri,
Eric Pop
Abstract:
Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also improve the mobility of two-dimensional (2D) semiconductors, e.g. by reducing intervalley scattering or lowering effective masses. Here, we experimentally show st…
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Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also improve the mobility of two-dimensional (2D) semiconductors, e.g. by reducing intervalley scattering or lowering effective masses. Here, we experimentally show strain-enhanced electron mobility in monolayer MoS2 transistors with uniaxial tensile strain, on flexible substrates. The on-state current and mobility are nearly doubled with tensile strain up to 0.7%, and devices return to their initial state after release of strain. We also show a gate-voltage-dependent gauge factor up to 200 for monolayer MoS2, which is higher than previous values reported for sub-1 nm thin piezoresistive films. These results demonstrate the importance of strain engineering 2D semiconductors for performance enhancements in integrated circuits, or for applications such as flexible strain sensors.
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Submitted 5 October, 2022; v1 submitted 8 May, 2022;
originally announced May 2022.
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High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides
Authors:
Alwin Daus,
Sam Vaziri,
Victoria Chen,
Cagil Koroglu,
Ryan W. Grady,
Connor S. Bailey,
Hye Ryoung Lee,
Kevin Brenner,
Kirstin Schauble,
Eric Pop
Abstract:
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on the micron scale, not benefitting from the short-channel advantages of 2D-TMDs. Here, we demonstrate flexible monolayer MoS2 FETs with the shortest channels repor…
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Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on the micron scale, not benefitting from the short-channel advantages of 2D-TMDs. Here, we demonstrate flexible monolayer MoS2 FETs with the shortest channels reported to date (down to 50 nm) and remarkably high on-current (up to 470 uA/um at 1 V drain-to-source voltage) which is comparable to flexible graphene or crystalline silicon FETs. This is achieved using a new transfer method wherein contacts are initially patterned on the rigid TMD growth substrate with nanoscale lithography, then coated with a polyimide (PI) film which becomes the flexible substrate after release, with the contacts and TMD. We also apply this transfer process to other TMDs, reporting the first flexible FETs with MoSe2 and record on-current for flexible WSe2 FETs. These achievements push 2D semiconductors closer to a technology for low-power and high-performance flexible electronics.
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Submitted 5 February, 2021; v1 submitted 8 September, 2020;
originally announced September 2020.
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Experimental realization of an optical antenna for collecting 99% of photons from a quantum emitter
Authors:
X. -L. Chu,
T. J. K. Brenner,
X. -W. Chen,
Y. Ghosh,
J. A. Hollingsworth,
V. Sandoghdar,
S. Goetzinger
Abstract:
We present the fabrication and characterization of an optical antenna that converts the dipolar radiation of a quantum emitter to a directional beam with 99% efficiency. Aside from its implications for efficient detection of nanoscopic emitters, this antenna facilitates a deterministic single-photon source with applications in quantum information processing, metrology and sub-shot-noise detection…
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We present the fabrication and characterization of an optical antenna that converts the dipolar radiation of a quantum emitter to a directional beam with 99% efficiency. Aside from its implications for efficient detection of nanoscopic emitters, this antenna facilitates a deterministic single-photon source with applications in quantum information processing, metrology and sub-shot-noise detection of absorption. We discuss the photophysical limitations of the currently used quantum emitters for the realization of such a device.
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Submitted 3 June, 2014;
originally announced June 2014.
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Fabrication of alignment structures for a fiber resonator by use of deep-ultraviolet lithography
Authors:
X. Liu,
K. -H. Brenner,
M. Wilzbach,
M. Schwarz,
T. Fernholz,
J. Schmiedmayer
Abstract:
We present a novel method to mount and align an optical-fiber-based resonator on the flat surface of an atom chip with ultrahigh precision. The structures for mounting a pair of fibers, which constitute the fiber resonator, are produced by a spin-coated SU-8 photoresist technique by use of deep-UV lithography. The design and production of the SU-8 structures are discussed.
From the measured fi…
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We present a novel method to mount and align an optical-fiber-based resonator on the flat surface of an atom chip with ultrahigh precision. The structures for mounting a pair of fibers, which constitute the fiber resonator, are produced by a spin-coated SU-8 photoresist technique by use of deep-UV lithography. The design and production of the SU-8 structures are discussed.
From the measured finesses we calculate the coupling loss of the SU-8 structures acting as a kind of fiber splice to be smaller than 0.013 dB.
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Submitted 22 August, 2006;
originally announced August 2006.
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Detecting Neutral Atoms on an Atom Chip
Authors:
M. Wilzbach,
A. Haase,
M. Schwarz,
D. Heine,
K. Wicker,
X. Liu,
K. -H. Brenner,
S. Groth,
Th. Fernholz,
B. Hessmo,
J. Schmiedmayer
Abstract:
Detecting single atoms (qubits) is a key requirement for implementing quantum information processing on an atom chip. The detector should ideally be integrated on the chip. Here we present and compare different methods capable of detecting neutral atoms on an atom chip. After a short introduction to fluorescence and absorption detection we discuss cavity enhanced detection of single atoms. In pa…
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Detecting single atoms (qubits) is a key requirement for implementing quantum information processing on an atom chip. The detector should ideally be integrated on the chip. Here we present and compare different methods capable of detecting neutral atoms on an atom chip. After a short introduction to fluorescence and absorption detection we discuss cavity enhanced detection of single atoms. In particular we concentrate on optical fiber based detectors such as fiber cavities and tapered fiber dipole traps. We discuss the various constraints in building such detectors in detail along with the current implementations on atom chips. Results from experimental tests of fiber integration are also described. In addition we present a pilot experiment for atom detection using a concentric cavity to verify the required scaling.
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Submitted 18 August, 2006;
originally announced August 2006.
