arXiv:2304.14170
[pdf]
quant-ph
cond-mat.mes-hall
cond-mat.mtrl-sci
physics.app-ph
physics.optics
A solid-state source of single and entangled photons at diamond SiV$^-$-center transitions operating at 80K
Authors:
Xin Cao,
Jingzhong Yang,
Tom Fandrich,
Yiteng Zhang,
Eddy P. Rugeramigabo,
Benedikt Brechtken,
Rolf J. Haug,
Michael Zopf,
Fei Ding
Abstract:
Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanopho…
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Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices incorporating the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 $\pm$ 1.7 nm) close to the zero-phonon line of Silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 $\pm$ 0.09). High single photon purity is maintained from 4 K (g$^($$^2$$^)$(0) = 0.07 $\pm$ 0.02) up to 80 K (g$^($$^2$$^)$(0) = 0.11 $\pm$ 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.
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Submitted 27 April, 2023;
originally announced April 2023.
Surface quantum dots with pure, coherent, and blinking-free single photon emission
Authors:
Xin Cao,
Jingzhong Yang,
Pengji Li,
Tom Fandrich,
Eddy P. Rugeramigabo,
Vlastimil Křápek,
Chenxi Ma,
Frederik Benthin,
Robert Keil,
Benedikt Brechtken,
Rolf J. Haug,
Michael Oestreich,
Yiteng Zhang,
Constantin Schmidt,
Zhao An,
Michael Zopf,
Fei Ding
Abstract:
The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination dynamics. However, surface vicinity is inevitable for many scalable nano-optical applications. Epitaxially grown quantum dots are the best candidate for high-performan…
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The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination dynamics. However, surface vicinity is inevitable for many scalable nano-optical applications. Epitaxially grown quantum dots are the best candidate for high-performance single photon emission and show great potential for quantum technologies. Yet, these emitters only reveal their excellent properties if they are deeply embedded in a semiconductor host. Until today, quantum dots close to surfaces yield weak, broad, and unstable emissions. Here, we show the complete restoration of optical properties from quantum dots grown directly on a semiconductor surface. The vanishing luminescence from the as-grown sample turns into bright, ultra-stable, coherent and blinking-free single photon emission after sulphur passivation. Under quasi-resonant excitation, single photons are generated with 98.8% purity, 77% indistinguishability, linewidths down to 4 $μ$eV and 99.69% persistency across 11 orders of magnitude in time. The emission is stable even after two years and when being subjected to nanomanufacturing processes. Some long-standing stumbling blocks for surface-dominated quantum dots are thereby removed, unveiling new possibilities for hybrid nano-devices and applications in quantum communication or sensing.
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Submitted 12 May, 2023; v1 submitted 27 July, 2022;
originally announced July 2022.