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What is in a Name: Defining -High Entropy- Oxides
Authors:
Matthew Brahlek,
Maria Gazda,
Veerle Keppens,
Alessandro R. Mazza,
Scott J. McCormack,
Aleksandra Mielewczyk-Gryń,
Brianna Musico,
Katharine Page,
Christina Rost,
Susan B. Sinnott,
Cormac Toher,
Thomas Z. Ward,
Ayako Yamamoto
Abstract:
High entropy oxides are emerging as an exciting new avenue to design highly tailored functional behaviors that have no traditional counterparts. Study and application of these materials are bringing together scientists and engineers from physics, chemistry, and materials science. The diversity of each of these disciplines comes with perspectives and jargon that may be confusing to those outside of…
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High entropy oxides are emerging as an exciting new avenue to design highly tailored functional behaviors that have no traditional counterparts. Study and application of these materials are bringing together scientists and engineers from physics, chemistry, and materials science. The diversity of each of these disciplines comes with perspectives and jargon that may be confusing to those outside of the individual fields, which can result in miscommunication of important aspects of research. In this perspective, we provide examples of research and characterization taken from these different fields to provide a framework for classifying the differences between compositionally complex oxides, high entropy oxides, and entropy stabilized oxides, which is intended to bring a common language to this emerging area. We highlight the critical importance of understanding a materials crystallinity, composition, and mixing length scales in determining its true definition.
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Submitted 4 November, 2022; v1 submitted 26 August, 2022;
originally announced August 2022.
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Pulsed-laser epitaxy of metallic delafossite PdCrO$_2$ films
Authors:
Jong Mok Ok,
Matthew Brahlek,
Woo Seok Choi,
Kevin M. Roccapriore,
Matthew F. Chisholm,
Soyeun Kim,
Changhee Sohn,
Elizabeth Skoropata,
Sangmoon Yoon,
Jun Sung Kim,
Ho Nyung Lee
Abstract:
Alternate stacking of a highly conducting metallic layer with a magnetic triangular layer found in delafossite PdCrO2 provides an excellent platform for discovering intriguing correlated quantum phenomena. Thin film growth of the material may enable not only tuning the basic physical properties beyond what bulk materials can exhibit, but also developing novel hybrid materials by interfacing with d…
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Alternate stacking of a highly conducting metallic layer with a magnetic triangular layer found in delafossite PdCrO2 provides an excellent platform for discovering intriguing correlated quantum phenomena. Thin film growth of the material may enable not only tuning the basic physical properties beyond what bulk materials can exhibit, but also developing novel hybrid materials by interfacing with dissimilar materials, yet this has proven to be extremely challenging. Here, we report the epitaxial growth of metallic delafossite PdCrO2 films by pulsed laser epitaxy (PLE). The fundamental role of the PLE growth conditions, epitaxial strain, and chemical and structural characteristics of the substrate is investigated by growing under various growth conditions and on various types of substrates. While strain plays a large role in improving the crystallinities, the direct growth of epitaxial PdCrO2 films without impurity phases was not successful. We attribute this difficulty to both the chemical and structural dissimilarities between the substrates and volatile nature of PdO layer, which make nucleation of the right phase difficult. This difficulty was overcome by growing CuCrO2 buffer layers before PdCrO2 were grown. Unlike PdCrO2, CuCrO2 films were rather readily grown with a relatively wide growth window. Only monolayer thick buffer layer was sufficient to grow the correct PdCrO2 phase. This result indicates that the epitaxy of Pd-based delafossites is extremely sensitive to the chemistry and structure of the interface, necessitating near perfect substrate materials. The resulting films are commensurately strained and show an antiferromagnetic transition at 40 K that persists down to as thin as 3.6 nm in thickness.
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Submitted 20 February, 2020; v1 submitted 19 February, 2020;
originally announced February 2020.
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Plasmon-phonon interactions in topological insulator rings
Authors:
Marta Autore,
Fausto D'Apuzzo,
Alessandra Di Gaspare,
Valeria Giliberti,
Odeta Limaj,
Pascale Roy,
Matthew Brahlek,
Nikesh Koirala,
Seongshik Oh,
Francisco Javier Garcìa de Abajo,
Stefano Lupi
Abstract:
The great potential of Dirac electrons for plasmonics and photonics has been readily recognized after their discovery in graphene, followed by applications to smart optical devices. Dirac carriers are also found in topological insulators (TI) --quantum systems having an insulating gap in the bulk and intrinsic Dirac metallic states at the surface--. Here, we investigate the plasmonic response of r…
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The great potential of Dirac electrons for plasmonics and photonics has been readily recognized after their discovery in graphene, followed by applications to smart optical devices. Dirac carriers are also found in topological insulators (TI) --quantum systems having an insulating gap in the bulk and intrinsic Dirac metallic states at the surface--. Here, we investigate the plasmonic response of ring structures patterned in Bi$_2$Se$_3$ TI films, which we investigate through terahertz (THz) spectroscopy. The rings are observed to exhibit a bonding and an antibonding plasmon modes, which we tune in frequency by varying their diameter. We develop an analytical theory based on the THz conductivity of unpatterned films, which accurately describes the strong plasmon-phonon hybridization and Fano interference experimentally observed as the bonding plasmon is swiped across the promineng 2\,THz phonon exhibited by this material. This work opens the road for the investigation of plasmons in topological insulators and for their application in tunable THz devices.
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Submitted 10 April, 2015;
originally announced April 2015.
