Surface acoustic waves Brillouin photonics on a silicon nitride chip
Authors:
Yvan Klaver,
Randy te Morsche,
Roel A. Botter,
Batoul Hashemi,
Bruno L. Segat Frare,
Akhileshwar Mishra,
Kaixuan Ye,
Hamidu Mbonde,
Pooya Torab Ahmadi,
Niloofar Majidian Taleghani,
Evan Jonker,
Redlef B. G. Braamhaar,
Ponnambalam Ravi Selvaganapathy,
Peter Mascher,
Peter J. M. van der Slot,
Jonathan D. B. Bradley,
David Marpaung
Abstract:
Seamlessly integrating stimulated Brillouin scattering (SBS) in a low-loss and mature photonic integration platform remains a complicated task. Virtually all current approaches fall short in simultaneously achieving strong SBS, low losses, and technological scalability. In this work we incorporate stong SBS into a standard silicon nitride platform by a simple deposition of a tellurium oxide layer,…
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Seamlessly integrating stimulated Brillouin scattering (SBS) in a low-loss and mature photonic integration platform remains a complicated task. Virtually all current approaches fall short in simultaneously achieving strong SBS, low losses, and technological scalability. In this work we incorporate stong SBS into a standard silicon nitride platform by a simple deposition of a tellurium oxide layer, a commonly used material for acousto-optic modulators. In these heterogeneously integrated waveguides, we harness novel SBS interactions actuated by surface acoustic waves (SAWs) leading to more than two orders of magnitude gain enhancement. Three novel applications are demonstrated in this platform: (i) a silicon nitride Brillouin amplifier with 5 dB net optical gain, (ii) a compact intermodal stimulated Brillouin laser (SBL) capable of high purity radio frequency (RF) signal generation with 7 Hz intrinsic linewidth, and (iii) a widely tunable microwave photonic notch filter with ultra-narrow linewidth of 2.2 MHz enabled by Brillouin induced opacity. These advancements can unlock an array of new RF and optical technologies to be directly integrated in silicon nitride.
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Submitted 21 October, 2024;
originally announced October 2024.
Stimulated Brillouin scattering in tellurite-covered silicon nitride waveguides
Authors:
Roel A. Botter,
Yvan Klaver,
Randy te Morsche,
Bruno L. Segat Frare,
Batoul Hashemi,
Kaixuan Ye,
Akhileshwar Mishra,
Redlef B. G. Braamhaar,
Jonathan D. B. Bradley,
David Marpaung
Abstract:
Stimulated Brillouin scattering (SBS), a coherent nonlinear effect coupling acoustics and optics, can be used in a wide range of applications such as Brillouin lasers and tunable narrowband RF filtering. Wide adoption of such technologies however, would need a balance of strong Brillouin interaction and low optical loss in a structure compatible with large scale fabrication. Achieving these charac…
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Stimulated Brillouin scattering (SBS), a coherent nonlinear effect coupling acoustics and optics, can be used in a wide range of applications such as Brillouin lasers and tunable narrowband RF filtering. Wide adoption of such technologies however, would need a balance of strong Brillouin interaction and low optical loss in a structure compatible with large scale fabrication. Achieving these characteristics in scalable platforms such as silicon and silicon nitride remains a challenge. Here, we investigate a scalable Brillouin platform combining low loss Si$_3$N$_4$ and tellurium oxide (TeO$_2$) exhibiting strong Brillouin response and enhanced acoustic confinement. In this platform we measure a Brillouin gain coefficient of 8.5~m$^{-1}$W$^{-1}$, exhibiting a twenty fold improvement over the largest previously reported Brillouin gain in a Si$_3$N$_4$ platform. Further, we demonstrate cladding engineering to control the strength of the Brillouin interaction. We utilized the Brillouin gain and loss resonances in this waveguide for an RF photonic filter with more than 15 dB rejection and 250 MHz linewidth. Finally, we present a pathway by geometric optimization and cladding engineering to a further enhancement of the gain coefficient to 155~m$^{-1}$W$^{-1}$, a potential 400 times increase in the Brillouin gain coefficient.
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Submitted 24 July, 2023;
originally announced July 2023.
