Showing 1–9 of 9 results for author: Bougeard, D

High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line

Authors: Alberto Mistroni, Marco Lisker, Yuji Yamamoto, Wei-Chen Wen, Fabian Fidorra, Henriette Tetzner, Laura K. Diebel, Lino Visser, Spandan Anupam, Vincent Mourik, Lars R. Schreiber, Hendrik Bluhm, Dominique Bougeard, Marvin H. Zoellner, Giovanni Capellini, Felix Reichmann

Abstract: The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS manufacturing approach. To this end, both the gate stack and the Si/SiGe heterostructure must be of high quality, exhibiting uniformity across the wafer and consistent pe… ▽ More The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS manufacturing approach. To this end, both the gate stack and the Si/SiGe heterostructure must be of high quality, exhibiting uniformity across the wafer and consistent performance across multiple fabrication runs. Here, we report a comprehensive investigation of Si/SiGe heterostructures and gate stacks, fabricated in an industry-standard 200 mm BiCMOS pilot line. We evaluate the homogeneity and reproducibility by probing the properties of the two-dimensional electron gas (2DEG) in the shallow silicon quantum well through magnetotransport characterization of Hall bar-shaped field-effect transistors at 1.5 K. Across all the probed wafers, we observe minimal variation of the 2DEG properties, with an average maximum mobility of $(4.25\pm0.17)\times 10^{5}$ cm$^{2}$/Vs and low percolation carrier density of $(5.9\pm0.18)\times 10^{10}$ cm$^{-2}$ evidencing low disorder potential in the quantum well. The observed narrow statistical distribution of the transport properties highlights the reproducibility and the stability of the fabrication process. Furthermore, wafer-scale characterization of a selected individual wafer evidenced the homogeneity of the device performances across the wafer area. Based on these findings, we conclude that our material and processes provide a suitable platform for the development of scalable, Si/SiGe-based quantum devices. △ Less

Submitted 17 June, 2025; originally announced June 2025.

Comments: 14 pages, 2 figures

Optimizing ToF-SIMS Depth Profiles of Semiconductor Heterostructures

Authors: Jan Tröger, Reinhard Kersting, Birgit Hagenhoff, Dominique Bougeard, Nikolay V. Abrosimov, Jan Klos, Lars R. Schreiber, Hartmut Bracht

Abstract: The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on optimizing Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiles of semiconductor heterostructures aiming at a minimization of measurement-induced p… ▽ More The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on optimizing Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiles of semiconductor heterostructures aiming at a minimization of measurement-induced profile broadening. As model system, a state-of-the-art Molecular Beam Epitaxy (MBE) grown multilayer homostructure consisting of $^{\textit{nat}}$Si/$^{28}$Si bilayers with only 2 nm in thickness is investigated while varying the most relevant sputter parameters. Atomic concentration-depth profiles are determined and an error function based description model is used to quantify layer thicknesses as well as profile broadening. The optimization process leads to an excellent resolution of the multilayer homostructure. The results of this optimization guide to a ToF-SIMS analysis of another MBE grown heterostructure consisting of a strained and highly purified $^{28}$Si layer sandwiched between two Si$_{0.7}$Ge$_{0.3}$ layers. The sandwiched $^{28}$Si layer represents a quantum well that has proven to be an excellent host for the implementation of electron-spin qubits. △ Less

Submitted 25 July, 2024; originally announced July 2024.

Comments: 10 pages, 10 figures

Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

Authors: Malte Neul, Isabelle V. Sprave, Laura K. Diebel, Lukas G. Zinkl, Florian Fuchs, Yuji Yamamoto, Christian Vedder, Dominique Bougeard, Lars R. Schreiber

Abstract: Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructu… ▽ More Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructures are usually facilitated by a global annealing step activating implanted dopants, but compromising the carefully engineered layer stack due to atom diffusion and strain relaxation in the active device region. We demonstrate a local laser-based annealing process for recrystallization of ion-implanted contacts in SiGe, greatly reducing the thermal load on the active device area. To quickly adapt this process to the constantly evolving heterostructures, we deploy a calibration procedure based exclusively on optical inspection at room-temperature. We measure the electron mobility and contact resistance of laser annealed Hall bars at temperatures below 4.2 K and obtain values similar or superior than that of a globally annealed reference samples. This highlights the usefulness of laser-based annealing to take full advantage of high-performance Si/SiGe heterostructures. △ Less

Submitted 11 December, 2023; originally announced December 2023.

Comments: 11 pages, 8 figures

Sculpting ultrastrong light-matter coupling through spatial matter structuring

Authors: Joshua Mornhinweg, Laura Diebel, Maike Halbhuber, Josef Riepl, Erika Cortese, Simone De Liberato, Dominique Bougeard, Rupert Huber, Christoph Lange

Abstract: The central theme of cavity quantum electrodynamics is the coupling of a single optical mode with a single matter excitation, leading to a doublet of cavity polaritons which govern the optical properties of the coupled structure. Especially in the ultrastrong coupling regime, where the ratio of the vacuum Rabi frequency and the quasi-resonant carrier frequency of light,… ▽ More The central theme of cavity quantum electrodynamics is the coupling of a single optical mode with a single matter excitation, leading to a doublet of cavity polaritons which govern the optical properties of the coupled structure. Especially in the ultrastrong coupling regime, where the ratio of the vacuum Rabi frequency and the quasi-resonant carrier frequency of light, $Ω_{\mathrm R}/ω_{\mathrm c}$, approaches unity, the polariton doublet bridges a large spectral bandwidth $2Ω_{\mathrm R}$, and further interactions with off-resonant light and matter modes may occur. The resulting multi-mode coupling has recently attracted attention owing to the additional degrees of freedom for designing light-matter coupled resonances, despite added complexity. Here, we experimentally implement a novel strategy to sculpt ultrastrong multi-mode coupling by tailoring the spatial overlap of multiple modes of planar metallic THz resonators and the cyclotron resonances of Landau-quantized two-dimensional electrons, on subwavelength scales. We show that similarly to the selection rules of classical optics, this allows us to suppress or enhance certain coupling pathways and to control the number of light-matter coupled modes, their octave-spanning frequency spectra, and their response to magnetic tuning. This offers novel pathways for controlling dissipation, tailoring quantum light sources, nonlinearities, correlations as well as entanglement in quantum information processing. △ Less

Submitted 30 November, 2023; originally announced November 2023.

Nonlinear helicity anomalies in the cyclotron resonance photoresistance of two-dimensional electron systems

Authors: Erwin Mönch, Sophia Schweiss, Ivan Yahniuk, Maxim L. Savchenko, Ivan A. Dmitriev, Alexey Shuvaev, Andrei Pimenov, Dieter Schuh, Dominique Bougeard, Sergey D. Ganichev

Abstract: Our studies of the cyclotron resonance (CR) photoresistance in GaAs-based two-dimensional electron systems (2DES) reveal an anomalously low sensitivity to the helicity of the incoming circularly polarized terahertz radiation. We find that this anomaly is strongly intensity dependent, and the ratio of the low-temperature photoresistance signals for the CR-active (CRA) and CR-inactive (CRI) polariti… ▽ More Our studies of the cyclotron resonance (CR) photoresistance in GaAs-based two-dimensional electron systems (2DES) reveal an anomalously low sensitivity to the helicity of the incoming circularly polarized terahertz radiation. We find that this anomaly is strongly intensity dependent, and the ratio of the low-temperature photoresistance signals for the CR-active (CRA) and CR-inactive (CRI) polarities of magnetic field increases with lowering power, but, nevertheless, remains substantially lower than expected from conventional theory assuming interaction of the plane electromagnetic wave with the uniform 2DES. Our analysis shows that all data can be well described by the nonlinear CR-enhanced electron gas heating in both CRA and CRI regimes. This description, however, requires a source of anomalous absorption of radiation in the CRI regime. It can stem from evanescent electromagnetic fields originating from the near-field diffraction within or in the vicinity of the quantum well hosting the 2DES. △ Less

Submitted 9 November, 2023; originally announced November 2023.

Comments: 15 pages, 8 figures

Mode-multiplexing deep-strong light-matter coupling

Authors: J. Mornhinweg, L. Diebel, M. Halbhuber, M. Prager, J. Riepl, T. Inzenhofer, D. Bougeard, R. Huber, C. Lange

Abstract: Dressing quantum states of matter with virtual photons can create exotic effects ranging from vacuum-field modified transport to polaritonic chemistry, and may drive strong squeezing or entanglement of light and matter modes. The established paradigm of cavity quantum electrodynamics focuses on resonant light-matter interaction to maximize the coupling strength $Ω_\mathrm{R}/ω_\mathrm{c}$, defined… ▽ More Dressing quantum states of matter with virtual photons can create exotic effects ranging from vacuum-field modified transport to polaritonic chemistry, and may drive strong squeezing or entanglement of light and matter modes. The established paradigm of cavity quantum electrodynamics focuses on resonant light-matter interaction to maximize the coupling strength $Ω_\mathrm{R}/ω_\mathrm{c}$, defined as the ratio of the vacuum Rabi frequency and the carrier frequency of light. Yet, the finite oscillator strength of a single electronic excitation sets a natural limit to $Ω_\mathrm{R}/ω_\mathrm{c}$. Here, we demonstrate a new regime of record-strong light-matter interaction which exploits the cooperative dipole moments of multiple, highly non-resonant magnetoplasmon modes specifically tailored by our metasurface. This multi-mode coupling creates an ultrabroadband spectrum of over 20 polaritons spanning 6 optical octaves, vacuum ground state populations exceeding 1 virtual excitation quantum for electronic and optical modes, and record coupling strengths equivalent to $Ω_\mathrm{R}/ω_\mathrm{c}=3.19$. The extreme interaction drives strongly subcycle exchange of vacuum energy between multiple bosonic modes akin to high-order nonlinearities otherwise reserved to strong-field physics, and entangles previously orthogonal electronic excitations solely via vacuum fluctuations of the common cavity mode. This offers avenues towards tailoring phase transitions by coupling otherwise non-interacting modes, merely by shaping the dielectric environment. △ Less

Submitted 13 September, 2023; originally announced September 2023.

Observation of anomalously strong penetration of terahertz electric field through terahertz-opaque gold films into a GaAs/AlGaAs quantum well

Authors: S. D. Ganichev, S. N. Danilov, M. Kronseder, D. Schuh, I. Gronwald, D. Bougeard, E. L. Ivchenko, A. Ya. Shul'man

Abstract: We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the film… ▽ More We observe an anomalously high electric field of terahertz (THz) radiation acting on a two-dimensional electron gas (2DEG) placed beneath a thin gold film, which, however, is supposed to be opaque at THz frequencies. We show that the anomalously strong penetration of the THz electric field through a very high conductive gold film emerges if two conditions are fulfilled simultaneously: (i) the film's thickness is less than the skin depth and (ii) the THz electric field is measured beneath the film at distances substantially smaller than the radiation wavelength. We demonstrate that under these conditions the strength of the field acting on a 2DEG is almost the same as it would be in the absence of the gold film. The effect is detected for macroscopically homogeneous perforation-free gold films illuminated by THz-laser radiation with a spot smaller than the film area. This eliminates the near-field of the edge diffraction as a possible cause of the anomalous penetration. The microscopic origin of the effect remains unexplained in its details, yet. The observed effect can be used for the development of THz devices based on two-dimensional materials requiring robust highly conducting top gates placed at less than nanometer distance from the electron gas location. △ Less

Submitted 3 June, 2020; v1 submitted 16 February, 2020; originally announced February 2020.

Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/Si$_x$Ge$_{1-x}$ quantum dot

Authors: Arne Hollmann, Tom Struck, Veit Langrock, Andreas Schmidbauer, Floyd Schauer, Tim Leonhardt, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, Dominique Bougeard, Lars R. Schreiber

Abstract: Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $μ$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown… ▽ More Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $μ$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown $^{28}$Si/SiGe. The valley splitting is monotonically and reproducibly tunable up to 15 % by gate voltages, originating from a 6 nm lateral displacement of the quantum dot. We observe static spin relaxation times $T_1>1$ s at low magnetic fields in our device containing an integrated nanomagnet. At higher magnetic fields, $T_1$ is limited by the valley hotspot and by phonon noise coupling to intrinsic and artificial spin-orbit coupling, including phonon bottlenecking. △ Less

Submitted 30 March, 2020; v1 submitted 9 July, 2019; originally announced July 2019.

Comments: 8 pages,4 figures

Journal ref: Phys. Rev. Applied 13, 034068 (2020)

Extremely Nonperturbative Nonlinearities in GaAs Driven by Atomically Strong Terahertz Fields in Gold Metamaterials

Authors: C. Lange, T. Maag, M. Hohenleutner, S. Baierl, O. Schubert, E. Edwards, D. Bougeard, G. Woltersdorf, R. Huber

Abstract: Terahertz near fields of gold metamaterials resonant at a frequency of $0.88\,\rm THz$ allow us to enter an extreme limit of non-perturbative ultrafast THz electronics: Fields reaching a ponderomotive energy in the keV range are exploited to drive nondestructive, quasi-static interband tunneling and impact ionization in undoped bulk GaAs, injecting electron-hole plasmas with densities in excess of… ▽ More Terahertz near fields of gold metamaterials resonant at a frequency of $0.88\,\rm THz$ allow us to enter an extreme limit of non-perturbative ultrafast THz electronics: Fields reaching a ponderomotive energy in the keV range are exploited to drive nondestructive, quasi-static interband tunneling and impact ionization in undoped bulk GaAs, injecting electron-hole plasmas with densities in excess of $10^{19}\,\rm cm^{-3}$. This process causes bright luminescence at energies up to $0.5\,\rm eV$ above the band gap and induces a complete switch-off of the metamaterial resonance accompanied by self-amplitude modulation of transmitted few-cycle THz transients. Our results pave the way towards highly nonlinear THz optics and optoelectronic nanocircuitry with sub-picosecond switching times. △ Less

Submitted 14 April, 2016; originally announced April 2016.

Comments: Published in Physical Review Letters

Journal ref: Phys. Rev. Lett. 113, 227401 (2014)