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Perfectly harmonic spin cycloid and multi-$Q$ textures in the Weyl semimetal GdAlSi
Authors:
Ryota Nakano,
Rinsuke Yamada,
Juba Bouaziz,
Maurice Colling,
Masaki Gen,
Kentaro Shoriki,
Yoshihiro Okamura,
Akiko Kikkawa,
Hiroyuki Ohsumi,
Yoshikazu Tanaka,
Hajime Sagayama,
Hironori Nakao,
Yasujiro Taguchi,
Youtarou Takahashi,
Masashi Tokunaga,
Taka-hisa Arima,
Yoshinori Tokura,
Ryotaro Arita,
Jan Masell,
Satoru Hayami,
Max Hirschberger
Abstract:
A fundamental question concerns how topological electronic states are influenced by many-body correlations, and magnetic Weyl semimetals represent an important material platform to address this problem. However, the magnetic structures realized in these materials are limited, and in particular, no clear example of an undistorted helimagnetic state has been definitively identified. Here, we report…
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A fundamental question concerns how topological electronic states are influenced by many-body correlations, and magnetic Weyl semimetals represent an important material platform to address this problem. However, the magnetic structures realized in these materials are limited, and in particular, no clear example of an undistorted helimagnetic state has been definitively identified. Here, we report clear evidence of a harmonic helimagnetic cycloid with an incommensurate magnetic propagation vector in the Weyl semimetal GdAlSi via resonant elastic X-ray scattering, including rigorous polarization analysis. This cycloidal structure is consistent with the Dzyaloshinskii-Moriya (DM) interaction prescribed by the polar crystal structure of GdAlSi. Upon applying a magnetic field, the cycloid undergoes a transition to a novel multi-$Q$ state. This field-induced, noncoplanar texture is consistent with our numerical spin model, which incorporates the DM interaction and, crucially, anisotropic exchange. The perfectly harmonic Weyl helimagnet GdAlSi serves as a prototypical platform to study electronic correlation effects in periodically modulated Weyl semimetals.
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Submitted 18 March, 2025;
originally announced March 2025.
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Novel Electrical Characterization Method for Antiferroelectrics using a Positive Up Negative Down Approach
Authors:
Grégoire Magagnin,
Martine Le Berre,
Sara Gonzalez,
Damien Deleruyelle,
Bertrand Vilquin,
Jordan Bouaziz
Abstract:
This study demonstrates the effectiveness of AFE-PUND, a revisited Positive Up Negative Down (PUND) protocol for characterizing antiferroelectric (AFE) materials, in analyzing $ZrO_2$ films across different thicknesses, revealing key trends. The proposed AFE-PUND method enables the isolation of switching currents from non-switching contributions, allowing precise extraction of remanent polarizatio…
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This study demonstrates the effectiveness of AFE-PUND, a revisited Positive Up Negative Down (PUND) protocol for characterizing antiferroelectric (AFE) materials, in analyzing $ZrO_2$ films across different thicknesses, revealing key trends. The proposed AFE-PUND method enables the isolation of switching currents from non-switching contributions, allowing precise extraction of remanent polarization and coercive field from hysteresis loops. The remanent polarization increases with film thickness, reflecting enhanced domain stability, while endurance cycles highlight the wake-up effect and its eventual degradation due to fatigue in thicker films. Similarly, coercive fields decrease with thickness, indicating reduced switching barriers and a clearer transition between tetragonal and orthorhombic phases. The method provides valuable insights into micro-structural influences, such as defect accumulation, grain size, and domain wall pinning, which critically affect device performance. AFE-PUND thus establishes itself as an essential tool for advancing the understanding and optimization of antiferroelectric materials.
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Submitted 9 January, 2025;
originally announced January 2025.
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Comparative Performance of Fluorite-Structured Materials for Nanosupercapacitor Applications
Authors:
Grégoire Magagnin,
Jordan Bouaziz,
Martine Le Berre,
Sara Gonzalez,
Damien Deleruyelle,
Bertrand Vilquin
Abstract:
Over the last fifteen years, ferroelectric and antiferroelectric ultra thin films based on fluorite-structured materials have drawn significant attention for a wide variety of applications requiring high integration density. Antiferroelectric $ZrO_2$, in particular, holds significant promise for nanosupercapacitors, owing to its potential for high energy storage density (ESD) and high efficiency (…
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Over the last fifteen years, ferroelectric and antiferroelectric ultra thin films based on fluorite-structured materials have drawn significant attention for a wide variety of applications requiring high integration density. Antiferroelectric $ZrO_2$, in particular, holds significant promise for nanosupercapacitors, owing to its potential for high energy storage density (ESD) and high efficiency ($η$). This work assesses the potential of high-performance $Hf_{1-x}Zr_{x}O_2$ thin films encapsulated by TiN electrodes that show linear dielectric (LD), ferroelectric (FE), and antiferroelectric (AFE) behavior. Oxides on silicon are grown by magnetron sputtering and plasma-enhanced atomic layer deposition. ESD and $η$ are compared for FE, AFE, and LD samples at the same electrical field (3.5 MV/cm). As expected, ESD is higher for the FE sample ($95 J/cm^3$), but $η$ is ridiculously small ($\approx$ 55%), because of the opening of the FE hysteresis curve inducing high loss. Conversely, LD samples exhibit the highest efficiency (nearly 100%), at the expense of a lower ESD. AFE $ZrO_2$ thin film strikes a balance between FE and LD behavior, showing reduced losses compared to the FE sample but an ESD as high as $52 J/cm^3$ at 3.5 MV/cm. This value can be further increased up to $84 J/cm^3$ at a higher electrical field (4.0 MV/cm), with an $η$ of 75%, among the highest values reported for fluorite-structured materials, offering promising perspectives for future optimization.
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Submitted 15 May, 2024;
originally announced May 2024.
