Showing 1–1 of 1 results for author: Borchi, E

Theoretical calculations of the primary defects induced by pions and protons in SiC

Authors: Sorina Lazanu, Ionel Lazanu, Emilio Borchi, Mara Bruzzi

Abstract: In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV, is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs. In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV, is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs. △ Less

Submitted 28 March, 2002; v1 submitted 6 July, 2000; originally announced July 2000.

Comments: 9 pages, 2 figures, in press to Nuclear Instruments and Methods in Physics Research A v2 - modified title, and major revisions

Journal ref: Nucl.Instrum.Meth. A485 (2002) 768-773