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Milliwatt-level UV generation using sidewall poled lithium niobate
Authors:
C. A. A. Franken,
S. S. Ghosh,
C. C. Rodrigues,
J. Yang,
C. J. Xin,
S. Lu,
D. Witt,
G. Joe,
G. S. Wiederhecker,
K. -J. Boller,
M. Lončar
Abstract:
Integrated coherent sources of ultra-violet (UV) light are essential for a wide range of applications, from ion-based quantum computing and optical clocks to gas sensing and microscopy. Conventional approaches that rely on UV gain materials face limitations in terms of wavelength versatility; in response frequency upconversion approaches that leverage various optical nonlinearities have received c…
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Integrated coherent sources of ultra-violet (UV) light are essential for a wide range of applications, from ion-based quantum computing and optical clocks to gas sensing and microscopy. Conventional approaches that rely on UV gain materials face limitations in terms of wavelength versatility; in response frequency upconversion approaches that leverage various optical nonlinearities have received considerable attention. Among these, the integrated thin-film lithium niobate (TFLN) photonic platform shows particular promise owing to lithium niobate's transparency into the UV range, its strong second order nonlinearity, and high optical confinement. However, to date, the high propagation losses and lack of reliable techniques for consistent poling of cm-long waveguides with small poling periods have severely limited the utility of this platform. Here we present a sidewall poled lithium niobate (SPLN) waveguide approach that overcomes these obstacles and results in a more than two orders of magnitude increase in generated UV power compared to the state-of-the-art. Our UV SPLN waveguides feature record-low propagation losses of 2.3 dB/cm, complete domain inversion of the waveguide cross-section, and an optimum 50% duty cycle, resulting in a record-high normalized conversion efficiency of 5050 %W$^{-1}$cm$^{-2}$, and 4.2 mW of generated on-chip power at 390 nm wavelength. This advancement makes the TFLN photonic platform a viable option for high-quality on-chip UV generation, benefiting emerging applications.
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Submitted 20 March, 2025;
originally announced March 2025.
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Physical mode analysis of multimode cascaded nonlinear processes in strongly-coupled waveguides
Authors:
Lisi Xia,
Peter J. M. van der Slot,
Chris Toebes,
Klaus -J. Boller
Abstract:
We experimentally investigate on-chip control and analysis of spatially multimode nonlinear interactions in silicon nitride waveguide circuits. Using widely different dispersion of transverse supermodes in a strongly-coupled dual-core waveguide section, and using integrated pairs of input and output single-mode waveguides, we enable controlled excitation of nonlinear processes in multiple supermod…
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We experimentally investigate on-chip control and analysis of spatially multimode nonlinear interactions in silicon nitride waveguide circuits. Using widely different dispersion of transverse supermodes in a strongly-coupled dual-core waveguide section, and using integrated pairs of input and output single-mode waveguides, we enable controlled excitation of nonlinear processes in multiple supermodes, while a basic physical mode decomposition aids the identification of parallel and cascaded processes. Pumping with ultrashort pulses at 1.5-$μ$m wavelength (around 195-THz light frequency), we observe simultaneous dual-supermode, near-infrared supercontinuum generation having different spectral widths, in parallel with third-harmonic generation at around 515 nm (582 THz). Cascaded four-wave mixing with supercontinuum components upconverts the third-harmonic radiation toward a set of four shorter blue wavelengths emitted in the range between 485 and 450 nm (617 to 661 THz). The approach taken here, i.e., using chip-integrated spatial multiplexing and demultiplexing for excitation and analysis of broadband transverse nonlinear conversion, can be an advanced tool for better understanding and control in multimode nonlinear optics, such as for extending frequency conversion to wider spectral ranges via extra phase matching paths.
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Submitted 4 November, 2024; v1 submitted 31 October, 2024;
originally announced October 2024.
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Chip-integrated extended-cavity mode-locked laser in the visible
Authors:
Lisa V. Winkler,
Govert Neijts,
Hubertus J. M. Bastiaens,
Melissa J. Goodwin,
Albert van Rees,
Philip P. J. Schrinner,
Marcel Hoekman,
Ronald Dekker,
Adriano R. do Nascimento Jr.,
Peter J. M. van der Slot,
Christian Nölleke,
Klaus-J. Boller
Abstract:
Mode-locked lasers are of interest for applications such as biological imaging, non-linear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of laser diodes with low-loss photonic circuits. However additional challenges, such as a higher propagation loss and smaller alignment tolerances have prevented…
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Mode-locked lasers are of interest for applications such as biological imaging, non-linear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of laser diodes with low-loss photonic circuits. However additional challenges, such as a higher propagation loss and smaller alignment tolerances have prevented the realization of such lasers in the visible range. Here, we demonstrate the first chip-integrated mode-locked diode laser in the visible using an integrated photonic circuit for cavity extension. Based on a gallium arsenide gain chip and a low-loss silicon nitride feedback circuit, the laser is passively mode-locked using a saturable absorber implemented by focused ion beam milling. At a center wavelength of 642 nm, the laser shows an average output power of 3.4 mW, with a spectral bandwidth of 1.5 nm at a repetition rate of 7.84 GHz.
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Submitted 9 September, 2024;
originally announced September 2024.
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High-power and narrow-linewidth laser on thin-film lithium niobate enabled by photonic wire bonding
Authors:
Cornelis A. A. Franken,
Rebecca Cheng,
Keith Powell,
Georgios Kyriazidis,
Victoria Rosborough,
Juergen Musolf,
Maximilian Shah,
David R. Barton III,
Gage Hills,
Leif Johansson,
Klaus-J. Boller,
Marko Lončar
Abstract:
Thin-film lithium niobate (TFLN) has emerged as a promising platform for the realization of high performance chip-scale optical systems, spanning a range of applications from optical communications to microwave photonics. Such applications rely on the integration of multiple components onto a single platform. However, while many of these components have already been demonstrated on the TFLN platfo…
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Thin-film lithium niobate (TFLN) has emerged as a promising platform for the realization of high performance chip-scale optical systems, spanning a range of applications from optical communications to microwave photonics. Such applications rely on the integration of multiple components onto a single platform. However, while many of these components have already been demonstrated on the TFLN platform, to date, a major bottleneck of the platform is the existence of a tunable, high-power, and narrow-linewidth on-chip laser. Here, we address this problem using photonic wire bonding to integrate optical amplifiers with a thin-film lithium niobate feedback circuit, and demonstrate an extended cavity diode laser yielding high on-chip power of 78 mW, side mode suppression larger than 60 dB and wide wavelength tunability over 43 nm. The laser frequency stability over short timescales shows an ultra-narrow intrinsic linewidth of 550 Hz. Long-term recordings indicate a high passive stability of the photonic wire bonded laser with 58 hours of mode-hop-free operation, with a trend in the frequency drift of only 4.4 MHz/h. This work verifies photonic wire bonding as a viable integration solution for high performance on-chip lasers, opening the path to system level upscaling and Watt-level output powers.
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Submitted 5 July, 2024; v1 submitted 28 June, 2024;
originally announced July 2024.
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Integrated diode lasers for the generation of sub-GHz repetition rate frequency combs
Authors:
Anzal Memon,
Albert van Rees,
Jesse Mak,
Youwen Fan,
Peter van der Slot,
Hubertus Bastiaens,
Klaus-J Boller
Abstract:
We demonstrate absorber-free passive and hybrid mode-locking at sub-GHz repetition rates using a hybrid integrated extended cavity diode laser around 1550 nm. The laser is based on InP as gain medium and a long Si$_3$N$_4$ feedback circuit, with three highly frequency selective microring resonators. The feedback resonators not only increases the cavity length up to 0.6 m to achieve sub-GHz repetit…
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We demonstrate absorber-free passive and hybrid mode-locking at sub-GHz repetition rates using a hybrid integrated extended cavity diode laser around 1550 nm. The laser is based on InP as gain medium and a long Si$_3$N$_4$ feedback circuit, with three highly frequency selective microring resonators. The feedback resonators not only increases the cavity length up to 0.6 m to achieve sub-GHz repetition rates but also serve as a dispersive narrowband mirror for sharp spectral filtering, which enables Fourier domain mode-locking. We observe passive mode-locking with repetition rates below 500 MHz, with $\approx$ 15 comb lines at around 0.2 mW total power. To stabilize the repetition rate, hybrid mode-locking is demonstrated by weak RF modulation of the diode current at frequencies around 500 MHz. The RF injection reduces the Lorentzian linewidth component from 8.9 kHz to a detection limited value around 300 mHz. To measure the locking range of the repetition rate, the injected RF frequency is tuned with regard to the passive mode-locking frequency and the injected RF power is varied. The locking range increases approximately as a square-root function of the injected RF power. At 1 mW injection a wide locking range of about 80 MHz is obtained. We observe the laser maintaining stable mode-locking also when the DC diode pump current is increased from 40 mA to 190 mA, provided that the cavity length is maintained constant with thermo-refractive tuning.
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Submitted 30 May, 2024;
originally announced May 2024.
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Widely-tunable and narrow-linewidth hybrid-integrated diode laser at 637 nm
Authors:
Lisa V. Winkler,
Kirsten Gerritsma,
Albert van Rees,
Philip P. J. Schrinner,
Marcel Hoekman,
Ronald Dekker,
Adriano R. do Nascimento Jr.,
Peter J. M. van der Slot,
Christian Nölleke,
Klaus-J. Boller
Abstract:
We present hybrid-integrated extended cavity diode lasers tunable around 637 nm, with a gain-wide spectral coverage of 8 nm. This tuning range allows addressing the zero-phonon line of nitrogen vacancy centers and includes the wavelength of HeNe lasers (633 nm). The lasers provide wide mode-hop free tuning up to 97 GHz and a narrow intrinsic linewidth down to 10 kHz. The maximum output power is 2.…
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We present hybrid-integrated extended cavity diode lasers tunable around 637 nm, with a gain-wide spectral coverage of 8 nm. This tuning range allows addressing the zero-phonon line of nitrogen vacancy centers and includes the wavelength of HeNe lasers (633 nm). The lasers provide wide mode-hop free tuning up to 97 GHz and a narrow intrinsic linewidth down to 10 kHz. The maximum output power is 2.5 mW in a single-mode fiber, corresponding to an on-chip power of 4.0 mW. Full integration and packaging in a standard housing with fiber pigtails provide high intrinsic stability and will enable integration into complex optical systems.
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Submitted 8 April, 2024;
originally announced April 2024.
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Observation of a Brillouin dynamic grating in silicon nitride waveguides
Authors:
Roel Botter,
Jasper van den Hoogen,
Akhileshwar Mishra,
Kaixuan Ye,
Albert van Rees,
Marcel Hoekman,
Klaus Boller,
David Marpaung
Abstract:
Brillouin enhanced four wave mixing in the form of a Brillouin dynamic grating (BDG) enables a uniquely tunable filter, whose properties can be tuned by purely optical means. This makes the BDG a valuable tool in microwave photonics (MWP). BDGs have been studied extensively in fibers, but the only observation in an integrated platform required exotic materials. Unlocking BDG in a standard and matu…
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Brillouin enhanced four wave mixing in the form of a Brillouin dynamic grating (BDG) enables a uniquely tunable filter, whose properties can be tuned by purely optical means. This makes the BDG a valuable tool in microwave photonics (MWP). BDGs have been studied extensively in fibers, but the only observation in an integrated platform required exotic materials. Unlocking BDG in a standard and mature platform will enable its integration into large-scale circuits. Here we demonstrate the first observation of a BDG in a silicon nitride (Si$_3$N$_4$) waveguide. We also present a new, optimized design, which will enhance the BDG response of the waveguide, unlocking a path to large-scale integration into MWP circuits.
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Submitted 18 August, 2023;
originally announced August 2023.
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On-Chip Phase-Shift Induced Control of Supercontinuum Generation in a Dual-Core Si$\mathbf{_{3}}$N$\mathbf{_{4}}$ Waveguide
Authors:
Lisi Xia,
Peter J. M. van der Slot,
Maximilian Timmerkamp,
Bert Bastiaens,
Carsten Fallnich,
Klaus J. Boller
Abstract:
We investigate on-chip spectral control of supercontinuum generation, taking advantage of the additional spatial degree of freedom in strongly-coupled dual-core waveguides. Using numerical integration of the multi-mode generalized nonlinear Schrödinger equation, we show that, with proper waveguide cross-section design, selective excitation of supermodes can vary the dispersion to its extremes, i.e…
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We investigate on-chip spectral control of supercontinuum generation, taking advantage of the additional spatial degree of freedom in strongly-coupled dual-core waveguides. Using numerical integration of the multi-mode generalized nonlinear Schrödinger equation, we show that, with proper waveguide cross-section design, selective excitation of supermodes can vary the dispersion to its extremes, i.e., all-normal or anomalous dispersion can be selected via phase shifting in a Mach-Zehnder input circuit. The resulting control allows to provide vastly different supercontinuum spectra with the same waveguide circuit.
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Submitted 8 July, 2023;
originally announced July 2023.
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Long-term absolute frequency stabilization of a hybrid-integrated InP-Si3N4 diode laser
Authors:
Albert van Rees,
Lisa V. Winkler,
Pierre Brochard,
Dimitri Geskus,
Peter J. M. van der Slot,
Christian Nölleke,
Klaus-J. Boller
Abstract:
Hybrid integrated diode lasers based on combining semiconductor optical amplifiers with low-loss Si3N4-based feedback circuits enable great laser performance for advanced photonic circuits. In particular, using high-Q Si3N4 ring resonators for frequency-selective feedback provides wide spectral coverage, mode-hop free tuning, and high frequency stability on short timescales, showing as ultra-narro…
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Hybrid integrated diode lasers based on combining semiconductor optical amplifiers with low-loss Si3N4-based feedback circuits enable great laser performance for advanced photonic circuits. In particular, using high-Q Si3N4 ring resonators for frequency-selective feedback provides wide spectral coverage, mode-hop free tuning, and high frequency stability on short timescales, showing as ultra-narrow intrinsic linewidths. However, many applications also require long-term stability, which can be provided by locking the laser frequency to a suitable reference. We present the stabilization of a hybrid-integrated laser, which is widely tunable around the central wavelength of 1550 nm, to a fiber-based optical frequency discriminator (OFD) and to an acetylene absorption line. By locking the laser to the OFD, the laser's fractional frequency stability is improved down to 2.1$\cdot$10$^{-12}$ over an averaging time of 0.5 ms. For absolute stability over longer times of several days, we successfully lock the laser frequency to an acetylene absorption line. This limits the frequency deviations of the laser to a range of less than 12 MHz over 5 days.
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Submitted 24 May, 2023; v1 submitted 24 February, 2023;
originally announced February 2023.
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Hybrid integrated near UV lasers using the deep-UV Al2O3 platform
Authors:
C. A. A. Franken,
W. A. P. M. Hendriks,
L. V. Winkler,
M. Dijkstra,
A. R. do Nascimento Jr,
A. van Rees,
M. R. S. Mardani,
R. Dekker,
J. van Kerkhof,
P. J. M. van der Slot,
S. M. García-Blanco,
K. -J. Boller
Abstract:
Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable…
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Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable Vernier feedback circuits with GaN double-pass amplifiers in a hermetically sealed housing, we demonstrate the first extended cavity diode laser (ECDL) in the near UV. The laser shows a maximum fiber-coupled output power of 0.74 mW, corresponding to about 3.5 mW on chip, and tunes more than 4.4 nm in wavelength from 408.1 nm to 403.7 nm. Integrating stable, single-mode and tunable lasers into a deep-UV platform opens a new path for chip-integrated photonic applications.
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Submitted 22 February, 2023;
originally announced February 2023.
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Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
Authors:
Hatam Mahmudlu,
Robert Johanning,
Anahita Khodadad Kashi,
Albert van Rees,
Jörn P. Epping,
Raktim Haldar,
Klaus-J. Boller,
Michael Kues
Abstract:
Integrated photonics has recently become a leading platform for the realization and processing of optical entangled quantum states in compact, robust and scalable chip formats with applications in long-distance quantum-secured communication, quantum-accelerated information processing and non-classical metrology. However, the quantum light sources developed so far have relied on external bulky exci…
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Integrated photonics has recently become a leading platform for the realization and processing of optical entangled quantum states in compact, robust and scalable chip formats with applications in long-distance quantum-secured communication, quantum-accelerated information processing and non-classical metrology. However, the quantum light sources developed so far have relied on external bulky excitation lasers making them impractical, not reproducible prototype devices, hindering scalability and the transfer out of the lab into real-world applications. Here we demonstrate a fully integrated quantum light source, which overcomes these challenges through the combined integration of a laser cavity, a highly efficient tunable noise suppression filter ($> 55$ dB) exploiting the Vernier effect and a nonlinear microring for entangled photon pair generation through spontaneous four-wave mixing. The hybrid quantum source employs an electrically-pumped InP gain section and a Si$_3$N$_4$ low-loss microring filter system, and demonstrates high performance parameters, i.e., a pair emission over four resonant modes in the telecom band (bandwidth $\sim 1$ THz), and a remarkable pair detection rate of $\sim 620$ Hz at a high coincidence-to-accidental ratio of $\sim 80$. The source directly creates high-dimensional frequency-bin entangled quantum states (qubits/qudits), verified by quantum interference measurements with visibilities up to $96\%$ (violating Bell-inequality) and by density matrix reconstruction through state tomography showing fidelities of up to $99\%$. Our approach, leveraging a hybrid photonic platform, enables commercial-viable, low-cost, compact, light-weight, and field-deployable entangled quantum sources, quintessential for practical, out-of-lab applications, e.g., in quantum processors and quantum satellite communications systems.
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Submitted 17 June, 2022;
originally announced June 2022.
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Ultra-Efficient On-Chip Supercontinuum Generation from Sign-Alternating-Dispersion Waveguides
Authors:
Haider Zia,
Kaixuan Ye,
Yvan Klaver,
David Marpaung,
Klaus-J. Boller
Abstract:
Fully integrated supercontinuum sources on-chip are critical to enabling applications such as portable and mechanically-stable medical imaging devices, chemical sensing and LiDAR. However, the low-efficiency of current supercontinuum generation schemes prevent full on-chip integration. In this letter, we present a scheme where the input energy requirements for integrated supercontinuum generation…
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Fully integrated supercontinuum sources on-chip are critical to enabling applications such as portable and mechanically-stable medical imaging devices, chemical sensing and LiDAR. However, the low-efficiency of current supercontinuum generation schemes prevent full on-chip integration. In this letter, we present a scheme where the input energy requirements for integrated supercontinuum generation is drastically lowered by orders of magnitude, for bandwidth generation of the order of 500 to 1000 nm. Through sign-alternating the dispersion in a CMOS compatible silicon nitride waveguide, we achieve an efficiency enhancement by factors reaching 3800. We show that the pulse energy requirement for large bandwidth supercontinuum generation at high spectral energy (e.g., 1/e level) is lowered from nanojoules to 6 picojoules. The lowered pulse energy requirements enables that chip-integrated laser sources, such as mode-locked heterogeneously or hybrid integrated diode lasers, can be used as a pump source, enabling fully integrated on-chip high-bandwidth supercontinuum sources.
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Submitted 25 November, 2022; v1 submitted 12 May, 2022;
originally announced May 2022.
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Toward integrated synchronously pumped optical parametric oscillators in silicon nitride
Authors:
Niklas M. Lüpken,
David Becker,
Thomas Würthwein,
Klaus-J. Boller,
Carsten Fallnich
Abstract:
We present a tunable, hybrid waveguide-fiber optical parametric oscillator (OPO) synchronously pumped by an ultra-fast fiber laser exploiting four-wave mixing (FWM) generated in silicon nitride waveguides. Parametric oscillation results in a 35 dB enhancement of the idler spectral power density in comparison to spontaneous FWM, with the ability of wide wavelength tuning over 86 nm in the O-band. M…
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We present a tunable, hybrid waveguide-fiber optical parametric oscillator (OPO) synchronously pumped by an ultra-fast fiber laser exploiting four-wave mixing (FWM) generated in silicon nitride waveguides. Parametric oscillation results in a 35 dB enhancement of the idler spectral power density in comparison to spontaneous FWM, with the ability of wide wavelength tuning over 86 nm in the O-band. Measurements of the oscillation threshold and the efficiency of the feedback loop reveal how an integration of the OPO on a single silicon nitride chip can be accomplished at standard repetition rates of pump lasers in the order of 100 MHz.
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Submitted 13 August, 2021;
originally announced August 2021.
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High-purity microwave generation using a dual-frequency hybrid integrated semiconductor-dielectric waveguide laser
Authors:
Jesse Mak,
Albert van Rees,
Rob E. M. Lammerink,
Dimitri Geskus,
Youwen Fan,
Peter J. M. van der Slot,
Chris G. H. Roeloffzen,
Klaus-J. Boller
Abstract:
We present an integrated semiconductor-dielectric hybrid dual-frequency laser operating in the 1.5 $μ$m wavelength range for microwave and terahertz (THz) generation. Generating a microwave beat frequency near 11 GHz, we observe a record-narrow intrinsic linewidth as low as about 2 kHz. This is realized by hybrid integration of a single diode amplifier based on indium phosphide (InP) with a long,…
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We present an integrated semiconductor-dielectric hybrid dual-frequency laser operating in the 1.5 $μ$m wavelength range for microwave and terahertz (THz) generation. Generating a microwave beat frequency near 11 GHz, we observe a record-narrow intrinsic linewidth as low as about 2 kHz. This is realized by hybrid integration of a single diode amplifier based on indium phosphide (InP) with a long, low-loss silicon nitride (Si$_3$N$_4$) feedback circuit to extend the cavity photon lifetime, resulting in a cavity optical roundtrip length of about 30 cm on a chip. Simultaneous lasing at two frequencies is enabled by introducing an external control parameter for balancing the feedback from two tunable, frequency-selective Vernier mirrors on the Si$_3$N$_4$ chip. Each frequency can be tuned with a wavelength coverage of about 80 nm, potentially allowing for the generation of a broad range of frequencies in the microwave range up to the THz range.
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Submitted 24 November, 2020;
originally announced December 2020.
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A hybrid-integrated diode laser in the visible spectral range
Authors:
Cornelis A. A. Franken,
Albert van Rees,
Lisa V. Winkler,
Youwen Fan,
Dimitri Geskus,
Ronald Dekker,
Douwe H. Geuzebroek,
Carsten Fallnich,
Peter J. M. van der Slot,
Klaus-J. Boller
Abstract:
Generating visible light with wide tunability and high coherence based on photonic integrated circuits is of high interest for applications in biophotonics, precision metrology and quantum technology. Here we present the first demonstration of a hybrid-integrated diode laser in the visible spectral range. Using an AlGaInP optical amplifier coupled to a low-loss Si3N4 feedback circuit based on micr…
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Generating visible light with wide tunability and high coherence based on photonic integrated circuits is of high interest for applications in biophotonics, precision metrology and quantum technology. Here we present the first demonstration of a hybrid-integrated diode laser in the visible spectral range. Using an AlGaInP optical amplifier coupled to a low-loss Si3N4 feedback circuit based on microring resonators, we obtain a spectral coverage of 10.8 nm around 684.4 nm wavelength with up to 4.8 mW output power. The measured intrinsic linewidth is 2.3$\pm$0.2 kHz.
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Submitted 14 June, 2021; v1 submitted 8 December, 2020;
originally announced December 2020.
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Ring resonator enhanced mode-hop-free wavelength tuning of an integrated extended-cavity laser
Authors:
Albert van Rees,
Youwen Fan,
Dimitri Geskus,
Edwin J. Klein,
Ruud M. Oldenbeuving,
Peter J. M. van der Slot,
Klaus-J. Boller
Abstract:
Extending the cavity length of diode lasers with feedback from Bragg structures and ring resonators is highly effective for obtaining ultra-narrow laser linewidths. However, cavity length extension also decreases the free-spectral range of the cavity. This reduces the wavelength range of continuous laser tuning that can be achieved with a given phase shift of an intracavity phase tuning element. W…
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Extending the cavity length of diode lasers with feedback from Bragg structures and ring resonators is highly effective for obtaining ultra-narrow laser linewidths. However, cavity length extension also decreases the free-spectral range of the cavity. This reduces the wavelength range of continuous laser tuning that can be achieved with a given phase shift of an intracavity phase tuning element. We present a method that increases the range of continuous tuning to that of a short equivalent laser cavity, while maintaining the ultra-narrow linewidth of a long cavity. Using a single-frequency hybrid integrated InP-Si3N4 diode laser with 120 nm coverage around 1540 nm, with a maximum output of 24 mW and lowest intrinsic linewidth of 2.2 kHz, we demonstrate a six-fold increased continuous and mode-hop-free tuning range of 0.22 nm (28 GHz) as compared to the free-spectral range of the laser cavity.
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Submitted 19 December, 2019;
originally announced December 2019.
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Hybrid integrated semiconductor lasers with silicon nitride feedback circuits
Authors:
Klaus-J. Boller,
Albert van Rees,
Youwen Fan,
Jesse Mak,
Rob E. M. Lammerink,
Cornelis A. A. Franken,
Peter J. M. van der Slot,
David A. I. Marpaung,
Carsten Fallnich,
Jörn P. Epping,
Ruud M. Oldenbeuving,
Dimitri Geskus,
Ronald Dekker,
Ilka Visscher,
Robert Grootjans,
Chris G. H. Roeloffzen,
Marcel Hoekman,
Edwin J. Klein,
Arne Leinse,
René G. Heideman
Abstract:
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level i…
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Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 um wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.
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Submitted 18 December, 2019; v1 submitted 25 November, 2019;
originally announced November 2019.
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Ultra-narrow linewidth hybrid integrated semiconductor laser
Authors:
Youwen Fan,
Albert van Rees,
Peter J. M. van der Slot,
Jesse Mak,
Ruud Oldenbeuving,
Marcel Hoekman,
Dimitri Geskus,
Chris G. H. Roeloffzen,
Klaus-J. Boller
Abstract:
We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip. Employing solely dielectrics for single-roundtrip, single-mode resolved feedback filtering enables linewidth narrowing with increasing laser power, without limita…
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We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip. Employing solely dielectrics for single-roundtrip, single-mode resolved feedback filtering enables linewidth narrowing with increasing laser power, without limitations through nonlinear loss. We achieve single-frequency oscillation with up to 23 mW fiber coupled output power, 70-nm wide spectral coverage in the 1.55 $μ$m wavelength range with 3 mW output, and obtain more than 60 dB side mode suppression. Such properties and options for further linewidth narrowing render the approach of high interest for direct integration in photonic circuits serving microwave photonics, coherent communications, sensing and metrology with highest resolution.
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Submitted 13 July, 2020; v1 submitted 17 October, 2019;
originally announced October 2019.
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Supercontinuum generation in media with sign-alternated dispersion
Authors:
Haider Zia,
Niklas M. Lüpken,
Tim Hellwig,
Carsten Fallnich,
Klaus-J. Boller
Abstract:
When an ultrafast optical pulse with high intensity is propagating through transparent material a supercontinuum can be coherently generated by self-phase modulation, which is essential to many photonic applications in fibers and integrated waveguides. However, the presence of dispersion causes stagnation of spectral broadening past a certain propagation length, requiring an increased input peak p…
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When an ultrafast optical pulse with high intensity is propagating through transparent material a supercontinuum can be coherently generated by self-phase modulation, which is essential to many photonic applications in fibers and integrated waveguides. However, the presence of dispersion causes stagnation of spectral broadening past a certain propagation length, requiring an increased input peak power for further broadening. We present a concept to drive supercontinuum generation with significantly lower input power by counteracting spectral stagnation via alternating the sign of group velocity dispersion along the propagation. We demonstrate the effect experimentally in dispersion alternating fiber in excellent agreement with modeling, revealing almost an order of magnitude reduced peak power compared to uniform dispersion. Calculations reveal a similar power reduction also with integrated optical waveguides, simultaneously with a significant increase of flat bandwidth, which is important for on-chip broadband photonics.
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Submitted 6 December, 2019; v1 submitted 6 May, 2019;
originally announced May 2019.
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Integrated frequency comb laser with narrow intrinsic optical linewidth based on a dielectric waveguide feedback circuit
Authors:
Jesse Mak,
Albert van Rees,
Youwen Fan,
Edwin J. Klein,
Dimitri Geskus,
Peter J. M. van der Slot,
Klaus. -J. Boller
Abstract:
We present an integrated hybrid semiconductor-dielectric (InP-Si$_3$N$_4$) waveguide laser that generates frequency combs at a wavelength around 1.5 $μ$m with a record-low intrinsic optical linewidth of 34 kHz. This is achieved by extending the cavity photon lifetime using a low-loss dielectric waveguide circuit. In our experimental demonstration, the on-chip, effective optical path length of the…
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We present an integrated hybrid semiconductor-dielectric (InP-Si$_3$N$_4$) waveguide laser that generates frequency combs at a wavelength around 1.5 $μ$m with a record-low intrinsic optical linewidth of 34 kHz. This is achieved by extending the cavity photon lifetime using a low-loss dielectric waveguide circuit. In our experimental demonstration, the on-chip, effective optical path length of the laser cavity is extended to 6 cm. The resulting linewidth narrowing shows the high potential of on-chip, highly coherent frequency combs with direct electrical pumping, based on hybrid and heterogeneous integrated circuits making use of low-loss dielectric waveguides.
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Submitted 18 February, 2019;
originally announced February 2019.
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8x8 Reconfigurable quantum photonic processor based on silicon nitride waveguides
Authors:
Caterina Taballione,
Tom A. W. Wolterink,
Jasleen Lugani,
Andreas Eckstein,
Bryn A. Bell,
Robert Grootjans,
Ilka Visscher,
Dimitri Geskus,
Chris G. H. Roeloffzen,
Jelmer J. Renema,
Ian A. Walmsley,
Pepijn W. H. Pinkse,
Klaus-Jochen Boller
Abstract:
The development of large-scale optical quantum information processing circuits ground on the stability and reconfigurability enabled by integrated photonics. We demonstrate a reconfigurable 8x8 integrated linear optical network based on silicon nitride waveguides for quantum information processing. Our processor implements a novel optical architecture enabling any arbitrary linear transformation a…
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The development of large-scale optical quantum information processing circuits ground on the stability and reconfigurability enabled by integrated photonics. We demonstrate a reconfigurable 8x8 integrated linear optical network based on silicon nitride waveguides for quantum information processing. Our processor implements a novel optical architecture enabling any arbitrary linear transformation and constitutes the largest programmable circuit reported so far on this platform. We validate a variety of photonic quantum information processing primitives, in the form of Hong-Ou-Mandel interference, bosonic coalescence/anticoalescence and high-dimensional single-photon quantum gates. We achieve fidelities that clearly demonstrate the promising future for large-scale photonic quantum information processing using low-loss silicon nitride.
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Submitted 17 September, 2019; v1 submitted 28 May, 2018;
originally announced May 2018.
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Surface acoustic waves for acousto-optic modulation in buried silicon nitride waveguides
Authors:
Peter J. M. van der Slot,
Marco A. G. Porcel,
Klaus-J. Boller
Abstract:
We theoretically investigate the use of Rayleigh surface acoustic waves (SAWs) for refractive index modulation in optical waveguides consisting of amorphous dielectrics. Considering low-loss Si$_3$N$_4$ waveguides with a standard core cross section of 4.4$\times$0.03 $μ$m$^2$ size, buried 8 $μ$m deep in a SiO$_2$ cladding we compare surface acoustic wave generation in various different geometries…
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We theoretically investigate the use of Rayleigh surface acoustic waves (SAWs) for refractive index modulation in optical waveguides consisting of amorphous dielectrics. Considering low-loss Si$_3$N$_4$ waveguides with a standard core cross section of 4.4$\times$0.03 $μ$m$^2$ size, buried 8 $μ$m deep in a SiO$_2$ cladding we compare surface acoustic wave generation in various different geometries via a piezo-active, lead zirconate titanate film placed on top of the surface and driven via an interdigitized transducer (IDT). Using numerical solutions of the acoustic and optical wave equations, we determine the strain distribution of the SAW under resonant excitation. From the overlap of the acoustic strain field with the optical mode field we calculate and maximize the attainable amplitude of index modulation in the waveguide. For the example of a near-infrared wavelength of 840 nm, a maximum shift in relative effective refractive index of 0.7x10$^{-3}$ was obtained for TE polarized light, using an IDT period of 30 - 35 $μ$m, a film thickness of 2.5 - 3.5 $μ$m, and an IDT voltage of 10 V. For these parameters, the resonant frequency is in the range 70 - 85 MHz. The maximum shift increases to 1.2x10$^{-3}$, with a corresponding resonant frequency of 87 MHz, when the height of the cladding above the core is reduced to 3 $μ$m. The relative index change is about 300-times higher than in previous work based on non-resonant proximity piezo-actuation, and the modulation frequency is about 200-times higher. Exploiting the maximum relative index change of 1.2$\times$10$^{-3}$ in a low-loss balanced Mach-Zehnder modulator should allow full-contrast modulation in devices as short as 120 $μ$m (half-wave voltage length product = 0.24 Vcm).
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Submitted 10 April, 2019; v1 submitted 9 October, 2017;
originally announced October 2017.
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Photo-induced second-order nonlinearity in stoichiometric silicon nitride waveguides
Authors:
Marco A. G. Porcel,
Jesse Mak,
Caterina Taballione,
Victoria K. Schermerhorn,
Jörn P. Epping,
Peter J. M. van der Slot,
Klaus-J. Boller
Abstract:
We report the observation of second-harmonic generation in stoichiometric silicon nitride waveguides grown via low-pressure chemical vapour deposition. Quasi-rectangular waveguides with a large cross section were used, with a height of 1 μm and various different widths, from 0.6 to 1.2 μm, and with various lengths from 22 to 74 mm. Using a mode-locked laser delivering 6-ps pulses at 1064 nm wavele…
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We report the observation of second-harmonic generation in stoichiometric silicon nitride waveguides grown via low-pressure chemical vapour deposition. Quasi-rectangular waveguides with a large cross section were used, with a height of 1 μm and various different widths, from 0.6 to 1.2 μm, and with various lengths from 22 to 74 mm. Using a mode-locked laser delivering 6-ps pulses at 1064 nm wavelength with a repetition rate of 20 MHz, 15% of the incoming power was coupled through the waveguide, making maximum average powers of up to 15 mW available in the waveguide. Second-harmonic output was observed with a delay of minutes to several hours after the initial turn-on of pump radiation, showing a fast growth rate between 10$^{-4}$ to 10$^{-2}$ s$^{-1}$, with the shortest delay and highest growth rate at the highest input power. After this first, initial build-up, the second-harmonic became generated instantly with each new turn-on of the pump laser power. Phase matching was found to be present independent of the used waveguide width, although the latter changes the fundamental and second-harmonic phase velocities. We address the presence of a second-order nonlinearity and phase matching, involving an initial, power-dependent build-up, to the coherent photogalvanic effect. The effect, via the third-order nonlinearity and multiphoton absorption leads to a spatially patterned charge separation, which generates a spatially periodic, semi-permanent, DC-field-induced second-order susceptibility with a period that is appropriate for quasi-phase matching. The maximum measured second-harmonic conversion efficiency amounts to 0.4% in a waveguide with 0.9 x 1 μm$^2$ cross section and 36 mm length, corresponding to 53 μW at 532 nm with 13 mW of IR input coupled into the waveguide. The according $χ^{(2)}$ amounts to 3.7 pm/V, as retrieved from the measured conversion efficiency.
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Submitted 30 October, 2017; v1 submitted 9 October, 2017;
originally announced October 2017.
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Cluster size dependence of high-order harmonic generation
Authors:
Y. Tao,
R. Hagmeijers,
H. M. J. Bastiaens,
S. J. Goh,
P. J. M. van der Slot,
S. G. Biedron,
S. V. Milton,
K. -J. Boller
Abstract:
We investigate high-order harmonic generation (HHG) from noble gas clusters in a supersonic gas jet. To identify the contribution of harmonic generation from clusters versus that from gas monomers, we measure the high-order harmonic output over a broad range of the total atomic number density in the jet (from 3*10^16 cm^{-3} to 3x10^18 cm{-3}) at two different reservoir temperatures (303 K and 363…
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We investigate high-order harmonic generation (HHG) from noble gas clusters in a supersonic gas jet. To identify the contribution of harmonic generation from clusters versus that from gas monomers, we measure the high-order harmonic output over a broad range of the total atomic number density in the jet (from 3*10^16 cm^{-3} to 3x10^18 cm{-3}) at two different reservoir temperatures (303 K and 363 K). For the firrst time in the evaluation of the harmonic yield in such measurements, the variation of the liquid mass fraction, g, versus pressure and temperature is taken into consideration, which we determine, reliably and consistently, to be below 20% within our range of experimental parameters. By comparing the measured harmonic yield from a thin jet with the calculated corresponding yield from monomers alone, we find an increased emission of the harmonics when the average cluster size is less than 3000. Using g, under the assumption that the emission from monomers and clusters add up coherently, we calculate the ratio of the average single-atom response of an atom within a cluster to that of a monomer and find an enhancement of around 10 for very small average cluster size (~200). We do not find any dependence of the cut-off frequency on the composition of the cluster jet. This implies that HHG in clusters is based on electrons that return to their parent ions and not to neighbouring ions in the cluster. To fully employ the enhanced average single-atom response found for small average cluster sizes (~200), the nozzle producing the cluster jet must provide a large liquid mass fraction at these small cluster sizes for increasing the harmonic yield. Moreover, cluster jets may allow for quasi-phase matching, as the higher mass of clusters allows for a higher density contrast in spatially structuring the nonlinear medium.
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Submitted 2 May, 2017; v1 submitted 29 November, 2016;
originally announced November 2016.
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Coherent Cerenkov radiation and laser oscillation in a photonic crystal
Authors:
T. Denis,
M. V. van Dijk,
J. H. H. Lee,
R. van der Meer,
A. Strooisma,
P. J. M. van der Slot,
W. L. Vos,
K. J. Boller
Abstract:
We demonstrate that photonic crystals can be used to generate powerful and highly coherent laser radiation when injecting a beam of free electrons. Using theoretical investigations we present the startup dynamics and coherence properties of such laser, in which gain is provided by matching the optical phase velocity in the photonic crystal to the velocity of the electron beam.
We demonstrate that photonic crystals can be used to generate powerful and highly coherent laser radiation when injecting a beam of free electrons. Using theoretical investigations we present the startup dynamics and coherence properties of such laser, in which gain is provided by matching the optical phase velocity in the photonic crystal to the velocity of the electron beam.
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Submitted 26 October, 2016; v1 submitted 23 August, 2016;
originally announced August 2016.
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Programmable two-photon quantum interference in $10^3$ channels in opaque scattering media
Authors:
Tom A. W. Wolterink,
Ravitej Uppu,
Georgios Ctistis,
Willem L. Vos,
Klaus -J. Boller,
Pepijn W. H. Pinkse
Abstract:
We investigate two-photon quantum interference in an opaque scattering medium that intrinsically supports $10^6$ transmission channels. By adaptive spatial phase-modulation of the incident wavefronts, the photons are directed at targeted speckle spots or output channels. From $10^3$ experimentally available coupled channels, we select two channels and enhance their transmission, to realize the equ…
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We investigate two-photon quantum interference in an opaque scattering medium that intrinsically supports $10^6$ transmission channels. By adaptive spatial phase-modulation of the incident wavefronts, the photons are directed at targeted speckle spots or output channels. From $10^3$ experimentally available coupled channels, we select two channels and enhance their transmission, to realize the equivalent of a fully programmable $2\times2$ beam splitter. By sending pairs of single photons from a parametric down-conversion source through the opaque scattering medium, we observe two-photon quantum interference. The programmed beam splitter need not fulfill energy conservation over the two selected output channels and hence could be non-unitary. Consequently, we have the freedom to tune the quantum interference from bunching (Hong-Ou-Mandel-like) to antibunching. Our results establish opaque scattering media as a platform for high-dimensional quantum interference that is notably relevant for boson sampling and physical-key-based authentication.
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Submitted 3 November, 2015;
originally announced November 2015.
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Ultrafast, low-power, all-optical switching via birefringent phase-matched transverse mode conversion in integrated waveguides
Authors:
Tim Hellwig,
Jörn P. Epping,
Martin Schnack,
Klaus. -J. Boller,
Carsten Fallnich
Abstract:
We demonstrate the potential of birefringence-based, all-optical, ultrafast conversion between the transverse modes in integrated optical waveguides by modelling the conversion process by numerically solving the multi-mode coupled nonlinear Schroedinger equations. The observed conversion is induced by a control beam and due to the Kerr effect, resulting in a transient index grating which coherentl…
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We demonstrate the potential of birefringence-based, all-optical, ultrafast conversion between the transverse modes in integrated optical waveguides by modelling the conversion process by numerically solving the multi-mode coupled nonlinear Schroedinger equations. The observed conversion is induced by a control beam and due to the Kerr effect, resulting in a transient index grating which coherently scatters probe light from one transverse waveguide mode into another. We introduce birefringent phase matching to enable efficient all-optically induced mode conversion at different wavelengths of the control and probe beam. It is shown that tailoring the waveguide geometry can be exploited to explicitly minimize intermodal group delay as well as to maximize the nonlinear coefficient, under the constraint of a phase matching condition. The waveguide geometries investigated here, allow for mode conversion with over two orders of magnitude reduced control pulse energy compared to previous schemes and thereby promise nonlinear mode switching exceeding efficiencies of 90% at switching energies below 1 nJ.
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Submitted 17 July, 2015;
originally announced July 2015.
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Single-shot fluctuations in waveguided high-harmonic generation
Authors:
S. J. Goh,
Y. Tao,
P. J. M. van der Slot,
H. J. M. Bastiaens,
J. Herek,
S. G. Biedron,
M. B. Danailov,
S. V. Milton,
K. -J. Boller
Abstract:
For exploring the application potential of coherent soft x-ray (SXR) and extreme ultraviolet radiation (XUV) provided by high-harmonic generation, it is important to characterize the central output parameters. Of specific importance are pulse-to-pulse (shot-to-shot) fluctuations of the high-harmonic output energy, fluctuations of the direction of the emission (pointing instabilities), and fluctuat…
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For exploring the application potential of coherent soft x-ray (SXR) and extreme ultraviolet radiation (XUV) provided by high-harmonic generation, it is important to characterize the central output parameters. Of specific importance are pulse-to-pulse (shot-to-shot) fluctuations of the high-harmonic output energy, fluctuations of the direction of the emission (pointing instabilities), and fluctuations of the beam divergence and shape that reduce the spatial coherence. We present the first single-shot measurements of waveguided high-harmonic generation in a waveguided (capillary-based) geometry. Using a capillary waveguide filled with Argon gas as the nonlinear medium, we provide the first characterization of shot-to-shot fluctuations of the pulse energy, of the divergence and of the beam pointing. We record the strength of these fluctuations vs. two basic input parameters, which are the drive laser pulse energy and the gas pressure in the capillary waveguide. In correlation measurements between single-shot drive laser beam profiles and single-shot high-harmonic beam profiles we prove the absence of drive laser beam-pointing-induced fluctuations in the high-harmonic output. We attribute the main source of high-harmonic fluctuations to ionization-induced nonlinear mode mixing during propagation of the drive laser pulse inside the capillary waveguide.
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Submitted 15 July, 2015;
originally announced July 2015.
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Programmable photonic signal processor chip for radiofrequency applications
Authors:
Leimeng Zhuang,
Chris G. H. Roeloffzen,
Marcel Hoekman,
Klaus -J. Boller,
Arthur J. Lowery
Abstract:
For the abstract, please see the submitted article.
For the abstract, please see the submitted article.
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Submitted 1 May, 2015;
originally announced May 2015.
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High confinement, high yield Si3N4 waveguides for nonlinear optical application
Authors:
Jörn P. Epping,
Marcel Hoekman,
Richard Mateman,
Arne Leinse,
René G. Heideman,
Albert van Rees,
Peter J. M. van der Slot,
Chris J. Lee,
Klaus-J. Boller
Abstract:
In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high…
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In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.
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Submitted 13 January, 2015; v1 submitted 31 October, 2014;
originally announced October 2014.
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Integrated CARS Source based on Seeded Four-wave Mixing in Silicon Nitride
Authors:
Jörn P. Epping,
Michael Kues,
Peter J. M. van der Slot,
Chris J. Lee,
Carsten Fallnich,
Klaus-J. Boller
Abstract:
We present a theoretical investigation of an integrated nonlinear light source for coherent anti-Stokes Raman scattering (CARS) based on silicon nitride waveguides. Wavelength tunable and temporally synchronized signal and idler pulses are obtained by using seeded four-wave mixing. We find that the calculated input pump power needed for nonlinear wavelength generation is more than one order of mag…
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We present a theoretical investigation of an integrated nonlinear light source for coherent anti-Stokes Raman scattering (CARS) based on silicon nitride waveguides. Wavelength tunable and temporally synchronized signal and idler pulses are obtained by using seeded four-wave mixing. We find that the calculated input pump power needed for nonlinear wavelength generation is more than one order of magnitude lower than in previously reported approaches based on optical fibers. The tuning range of the wavelength conversion was calculated to be 1418 nm to 1518 nm (idler) and 788 nm to 857 nm (signal), which corresponds to a coverage of vibrational transitions from 2350 cm$^{-1}$ to 2810 cm$^{-1}$. A maximum conversion efficiency of 19.1% at a peak pump power of 300 W was obtained.
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Submitted 9 December, 2013; v1 submitted 8 November, 2013;
originally announced November 2013.
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High precision wavelength estimation method for integrated optics
Authors:
R. M. Oldenbeuving,
H. Song,
G. Schitter,
M. Verhaegen,
E. J. Klein,
C. J. Lee,
H. L. Offerhaus,
K. -J. Boller
Abstract:
A novel and simple approach to optical wavelength measurement is presented in this paper. The working principle is demonstrated using a tunable waveguide micro ring resonator and single photodiode. The initial calibration is done with a set of known wavelengths and resonator tunings. The combined spectral sensitivity function of the resonator and photodiode at each tuning voltage was modeled by a…
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A novel and simple approach to optical wavelength measurement is presented in this paper. The working principle is demonstrated using a tunable waveguide micro ring resonator and single photodiode. The initial calibration is done with a set of known wavelengths and resonator tunings. The combined spectral sensitivity function of the resonator and photodiode at each tuning voltage was modeled by a neural network. For determining the unknown wavelengths, the resonator was tuned with a set of heating voltages and the corresponding photodiode signals are collected. The unknown wavelength was estimated, based on the collected photodiode signals, the calibrated neural networks, and an optimization algorithm. The wavelength estimate method provides a high spectral precision of about 8 pm (5*10^(-6) at 1550 nm) in the wavelength range between 1549 nm to 1553 nm. A higher precision of 5 pm (3*10^(-6)) is achieved in the range between 1550.3 nm to 1550.8 nm, which is a factor of five improved compared to a simple lookup of data. The importance of our approach is that it strongly simplifies the optical system and enables optical integration. The approach is also of general importance, because it may be applicable to all wavelength monitoring devices which show an adjustable wavelength response.
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Submitted 10 June, 2013; v1 submitted 22 April, 2013;
originally announced April 2013.
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A gain-coefficient switched Alexandrite laser
Authors:
Chris J. Lee,
Peter J. M. van der Slot,
Klaus-J. Boller
Abstract:
We report on a gain-coefficient switched Alexandrite laser. An electro-optic modulator is used to switch between high and low gain states by making use of the polarization dependent gain of Alexandrite. In gain-coefficient switched mode, the laser produces 85 ns pulses with a pulse energy of 240 mJ at a repetition rate of 5 Hz.
We report on a gain-coefficient switched Alexandrite laser. An electro-optic modulator is used to switch between high and low gain states by making use of the polarization dependent gain of Alexandrite. In gain-coefficient switched mode, the laser produces 85 ns pulses with a pulse energy of 240 mJ at a repetition rate of 5 Hz.
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Submitted 11 September, 2012;
originally announced September 2012.
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Mapping individual electromagnetic field components inside a photonic crystal
Authors:
T. Denis,
B. Reijnders,
J. H. H. Lee,
P. J. M. van der Slot,
W. L. Vos,
K. -J. Boller
Abstract:
We present a method to map the absolute electromagnetic field strength inside photonic crystals. We apply the method to map the electric field component Ez of a two-dimensional photonic crystal slab at microwave frequencies. The slab is placed between two mirrors to select Bloch standing waves and a subwavelength spherical scatterer is scanned inside the resulting resonator. The resonant Bloch fre…
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We present a method to map the absolute electromagnetic field strength inside photonic crystals. We apply the method to map the electric field component Ez of a two-dimensional photonic crystal slab at microwave frequencies. The slab is placed between two mirrors to select Bloch standing waves and a subwavelength spherical scatterer is scanned inside the resulting resonator. The resonant Bloch frequencies shift depending on the electric field at the position of the scatterer. To map the electric field component Ez we measure the frequency shift in the reflection and transmission spectrum of the slab versus the scatterer position. Very good agreement is found between measurements and calculations without any adjustable parameters.
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Submitted 9 July, 2012;
originally announced July 2012.
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Competition between electronic Kerr and free carrier effects in an ultimate-fast optically switched semiconductor microcavity
Authors:
E. Yüce,
G. Ctistis,
J. Claudon,
E. Dupuy,
K. J. Boller,
J. M. Gérard,
W. L. Vos
Abstract:
We have performed ultrafast pump-probe experiments on a GaAs-AlAs microcavity with a resonance near 1300 nm in the "original" telecom band. We concentrate on ultimate-fast optical switching of the cavity resonance that is measured as a function of pump-pulse energy. We observe that at low pump-pulse energies the switching of the cavity resonance is governed by the instantaneous electronic Kerr eff…
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We have performed ultrafast pump-probe experiments on a GaAs-AlAs microcavity with a resonance near 1300 nm in the "original" telecom band. We concentrate on ultimate-fast optical switching of the cavity resonance that is measured as a function of pump-pulse energy. We observe that at low pump-pulse energies the switching of the cavity resonance is governed by the instantaneous electronic Kerr effect and is achieved within 300 fs. At high pump-pulse energies the index change induced by free carriers generated in the GaAs start to compete with the electronic Kerr effect and reduce the resonance frequency shift. We have developed an analytic model which predicts this competition in agreement with the experimental data. Our model includes a new term in the intensity-dependent refractive index that considers the effect of the probe pulse intensity, which is resonantly enhanced by the cavity. We calculate the effect of the resonantly enhanced probe light on the refractive index change induced by the electronic Kerr effect for cavities with different quality factors. By exploiting the linear regime where only the electronic Kerr effect is observed, we manage to retrieve the nondegenerate third order nonlinear susceptibility for GaAs from the cavity resonance shift as a function of pump-pulse energy.
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Submitted 17 August, 2012; v1 submitted 1 May, 2012;
originally announced May 2012.
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25 kHz narrow spectral bandwidth of a wavelength tunable diode laser with a short waveguide-based external cavity
Authors:
R. M. Oldenbeuving,
E. J. Klein,
H. L. Offerhaus,
C. J. Lee,
H. Song,
K. -J. Boller
Abstract:
We report on the spectral properties of a diode laser with a tunable external cavity in integrated optics. Even though the external cavity is short compared to other small-bandwidth external cavity lasers, the spectral bandwidth of this tunable laser is as small as 25 kHz (FWHM), at a side-mode suppression ratio (SMSR) of 50 dB. Our laser is also able to access preset wavelengths in as little as 2…
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We report on the spectral properties of a diode laser with a tunable external cavity in integrated optics. Even though the external cavity is short compared to other small-bandwidth external cavity lasers, the spectral bandwidth of this tunable laser is as small as 25 kHz (FWHM), at a side-mode suppression ratio (SMSR) of 50 dB. Our laser is also able to access preset wavelengths in as little as 200 us and able to tune over the full telecom C-band (1530 nm - 1565 nm).
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Submitted 2 April, 2012;
originally announced April 2012.
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Ellipsometry with an undetermined polarization state
Authors:
Feng Liu,
Chris J. Lee,
Juequan Chen,
Eric Louis,
Peter J. M. van der Slot,
Klaus J. Boller,
Fred Bijkerk
Abstract:
We show that, under the right conditions, one can make highly accurate polarization-based measurements without knowing the absolute polarization state of the probing light field. It is shown that light, passed through a randomly varying birefringent material has a well-defined orbit on the Poincare sphere, which we term a generalized polarization state, that is preserved. Changes to the generalize…
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We show that, under the right conditions, one can make highly accurate polarization-based measurements without knowing the absolute polarization state of the probing light field. It is shown that light, passed through a randomly varying birefringent material has a well-defined orbit on the Poincare sphere, which we term a generalized polarization state, that is preserved. Changes to the generalized polarization state can then be used in place of the absolute polarization states that make up the generalized state, to measure the change in polarization due to a sample under investigation. We illustrate the usefulness of this analysis approach by demonstrating fiber-based ellipsometry, where the polarization state of the probe light is unknown, and, yet, the ellipsometric angles of the investigated sample ($Ψ$ and $Δ$) are obtained with an accuracy comparable to that of conventional ellipsometry instruments by measuring changes to the generalized polarization state.
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Submitted 18 October, 2011;
originally announced October 2011.
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Incoherently pumped continuous wave optical parametric oscillator broadened by non-collinear phasematching
Authors:
Jelle Storteboom,
Chris J. Lee,
Ab F. Nieuwenhuis,
Ian D. Lindsay,
Klaus-J. Boller
Abstract:
In this paper, we report on a singly resonant optical parametric oscillator (OPO) pumped by an amplified spontaneous emission (ASE) source. The pump focusing conditions allow non-collinear phasematching, which resulted in a 230 nm (190 cm$^{-1}$) spectral bandwidth. Calculations indicate that such phasematching schemes may be used to further broaden OPO spectral bandwidths.
In this paper, we report on a singly resonant optical parametric oscillator (OPO) pumped by an amplified spontaneous emission (ASE) source. The pump focusing conditions allow non-collinear phasematching, which resulted in a 230 nm (190 cm$^{-1}$) spectral bandwidth. Calculations indicate that such phasematching schemes may be used to further broaden OPO spectral bandwidths.
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Submitted 9 September, 2011; v1 submitted 4 August, 2011;
originally announced August 2011.
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Modeling of mode-locking in a laser with spatially separate gain media
Authors:
R. M. Oldenbeuving,
C. J. Lee,
P. D. van Voorst,
H. L. Offerhaus,
K. -J. Boller
Abstract:
We present a novel laser mode-locking scheme and discuss its unusual properties and feasibility using a theoretical model. A large set of single-frequency continuous-wave lasers oscillate by amplification in spatially separated gain media. They are mutually phase-locked by nonlinear feedback from a common saturable absorber. As a result, ultra short pulses are generated. The new scheme offers thre…
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We present a novel laser mode-locking scheme and discuss its unusual properties and feasibility using a theoretical model. A large set of single-frequency continuous-wave lasers oscillate by amplification in spatially separated gain media. They are mutually phase-locked by nonlinear feedback from a common saturable absorber. As a result, ultra short pulses are generated. The new scheme offers three significant benefits: the light that is amplified in each medium is continuous wave, thereby avoiding issues related to group velocity dispersion and nonlinear effects that can perturb the pulse shape. The set of frequencies on which the laser oscillates, and therefore the pulse repetition rate, is controlled by the geometry of resonator-internal optical elements, not by the cavity length. Finally, the bandwidth of the laser can be controlled by switching gain modules on and off. This scheme offers a route to mode-locked lasers with high average output power, repetition rates that can be scaled into the THz range, and a bandwidth that can be dynamically controlled. The approach is particularly suited for implementation using semiconductor diode laser arrays.
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Submitted 1 October, 2010; v1 submitted 27 August, 2010;
originally announced August 2010.
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Spatially dependent Rabi oscillations: an approach to sub-diffraction-limited CARS microscopy
Authors:
Willem P. Beeker,
Chris J. Lee,
Klaus-Jochen Boller,
Petra Gross,
Carsten Cleff,
Carsten Fallnich,
Herman L. Offerhaus,
Jennifer L. Herek
Abstract:
We present a theoretical investigation of coherent anti-Stokes Raman scattering (CARS) that is modulated by periodically depleting the ground state population through Rabi oscillations driven by an additional control laser. We find that such a process generates optical sidebands in the CARS spectrum and that the frequency of the sidebands depends on the intensity of the control laser light field…
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We present a theoretical investigation of coherent anti-Stokes Raman scattering (CARS) that is modulated by periodically depleting the ground state population through Rabi oscillations driven by an additional control laser. We find that such a process generates optical sidebands in the CARS spectrum and that the frequency of the sidebands depends on the intensity of the control laser light field. We show that analyzing the sideband frequency upon scanning the beams across the sample allows one to spatially resolve emitter positions where a spatial resolution of 65 nm, which is well below the diffraction-limit, can be obtained.
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Submitted 12 November, 2009;
originally announced November 2009.
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The noise-limited-resolution for stimulated emission depletion microscopy
Authors:
Chris J. Lee,
Klaus J. Boller
Abstract:
With recent developments in microscopy, such as stimulated emission depletion (STED) microscopy, far-field imaging at resolutions better than the diffraction limit is now a commercially available technique. Here, we show that, in the special case of a diffusive regime, the noise-limited resolution of STED imaging is independent of the saturation intensity of the fluorescent label. Thermal motion l…
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With recent developments in microscopy, such as stimulated emission depletion (STED) microscopy, far-field imaging at resolutions better than the diffraction limit is now a commercially available technique. Here, we show that, in the special case of a diffusive regime, the noise-limited resolution of STED imaging is independent of the saturation intensity of the fluorescent label. Thermal motion limits the signal integration time, which, for a given excited-state lifetime, limits the total number of photons available for detection.
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Submitted 19 April, 2012; v1 submitted 12 August, 2009;
originally announced August 2009.
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Storage by trapping and spatial staggering of multiple interacting solitons in $Λ$-type media
Authors:
Willem P. Beeker,
Chris J. Lee,
Edip Can,
Klaus J. Boller
Abstract:
In this paper we investigate the properties of self induced transparency (SIT) solitons, propagating in a $Λ$-type medium. It was found that the interaction between SIT solitons can lead to trapping with their phase preserved in the ground state coherence of the medium. These phases can be altered in a systematic way by the application of appropriate light fields, such as additional SIT solitons.…
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In this paper we investigate the properties of self induced transparency (SIT) solitons, propagating in a $Λ$-type medium. It was found that the interaction between SIT solitons can lead to trapping with their phase preserved in the ground state coherence of the medium. These phases can be altered in a systematic way by the application of appropriate light fields, such as additional SIT solitons. Furthermore, multiple independent SIT solitons can be made to propagate as bi-solitons through their mutual interaction with a separate light field. Finally, we demonstrate that control of the SIT soliton phase can be used to implement an optical exclusive-or gate.
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Submitted 2 September, 2010; v1 submitted 17 July, 2009;
originally announced July 2009.
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Generation of stable ultra-relativistic attosecond electron bunches via the laser wakefield acceleration mechanism
Authors:
M. J. H. Luttikhof,
A. G. Khachatryan,
F. A. van Goor,
K. -J. Boller
Abstract:
In recent experiments ultra-relativistic femtosecond electron bunches were generated by a Laser Wakefield Accelerator (LWFA) in different regimes. Here we predict that even attosecond bunches can be generated by an LWFA due to the fast betatron phase mixing within a femtosecond electron bunch. The attosecond bunches are stable outside the LWFA and can propagate in vacuum many tens of centimeter…
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In recent experiments ultra-relativistic femtosecond electron bunches were generated by a Laser Wakefield Accelerator (LWFA) in different regimes. Here we predict that even attosecond bunches can be generated by an LWFA due to the fast betatron phase mixing within a femtosecond electron bunch. The attosecond bunches are stable outside the LWFA and can propagate in vacuum many tens of centimeter without significant change in their duration. Our calculations show that evidence for the formation of attosecond bunches can be found in the spectrum of coherent betatron radiation from LWFA's.
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Submitted 18 June, 2009;
originally announced June 2009.
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Electron bunch injection at an angle into a laser wakefield
Authors:
M. J. H. Luttikhof,
A. G. Khachatryan,
F. A. van Goor,
K. -J. Boller
Abstract:
External injection of electron bunches longer than the plasma wavelength in a laser wakefield accelerator can lead to the generation of femtosecond ultrarelativistic bunches with a couple of percent energy spread. Extensive study has been done on external electron bunch (e.g. one generated by a photo-cathode rf linac) injection in a laser wakefield for different configurations. In this paper we…
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External injection of electron bunches longer than the plasma wavelength in a laser wakefield accelerator can lead to the generation of femtosecond ultrarelativistic bunches with a couple of percent energy spread. Extensive study has been done on external electron bunch (e.g. one generated by a photo-cathode rf linac) injection in a laser wakefield for different configurations. In this paper we investigate a new way of external injection where the electron bunch is injected at a small angle into the wakefield. This way one can avoid the ponderomotive scattering as well as the vacuum-plasma transition region, which tend to destroy the injected bunch. In our simulations, the effect of the laser pulse dynamics is also taken into account. It is shown that injection at an angle can provide compressed and accelerated electron bunches with less than 2% energy spread. Another advantage of this scheme is that it has less stringent requirements in terms of the size of the injected bunch and there is the potential to trap more charge.
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Submitted 14 November, 2008; v1 submitted 21 October, 2008;
originally announced October 2008.
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Electromagnetic radiation from a laser wakefield accelerator
Authors:
A. G. Khachatryan,
F. A. van Goor,
K. -J. Boller
Abstract:
Coherent and incoherent electromagnetic radiation emitted from a laser wakefield accelerator is calculated based on Lienard-Wiechert potentials. It is found that at wavelengths longer than the bunch length, the radiation is coherent. The coherent radiation, which typically lies in the infrared range, shows features that reveal details of the acceleration process and properties of the electron bu…
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Coherent and incoherent electromagnetic radiation emitted from a laser wakefield accelerator is calculated based on Lienard-Wiechert potentials. It is found that at wavelengths longer than the bunch length, the radiation is coherent. The coherent radiation, which typically lies in the infrared range, shows features that reveal details of the acceleration process and properties of the electron bunch, such as its duration, charge, energy, and offset with respect to the wakefield axis. The incoherent range of the spectrum, which extends to the X-ray frequency range, consists of rather broad peaks, which are caused by the acceleration.
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Submitted 7 May, 2008;
originally announced May 2008.
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Dynamics of Femtosecond Electron Bunches
Authors:
A. G. Khachatryan,
A. Irman,
F. A. van Goor,
K. -J. Boller
Abstract:
In the laser wakefield accelerator (LWFA) a short intense laser pulse, with a duration of the order of a plasma wave period, excites an unusually strong plasma wake wave (laser wakefield). Recent experiments on laser wakefield acceleration [Nature (London) 431, p.535, p.538, p.541 (2004)] demonstrated generation of ultra-short (with a duration of a few femtoseconds) relativistic electron bunches…
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In the laser wakefield accelerator (LWFA) a short intense laser pulse, with a duration of the order of a plasma wave period, excites an unusually strong plasma wake wave (laser wakefield). Recent experiments on laser wakefield acceleration [Nature (London) 431, p.535, p.538, p.541 (2004)] demonstrated generation of ultra-short (with a duration of a few femtoseconds) relativistic electron bunches with relatively low energy spread of the order of a few percent. We have studied the dynamics of such bunches in vacuum and in laser wakefield. The results show strong bunch dynamics already on a few millimeters propagation distance in both cases. In vacuum, the bunch radius and emittance quickly grow. The latter worsens the focusability of the bunch. We found that when a femtosecond bunch is accelerated in a channel-guided laser wakefield, for realistic bunch lengths, the bunch length is approximately conserved. However, the spread in betatron frequencies leads to fast betatron phase mixing in the bunch envelope for on-axis injection. When bunch is injected in a laser wakefield off-axis, the bunch decoherence results in considerable increase in the normalized bunch emittance, and, in some cases, in increase in the energy spread, after acceleration. We also discuss a possible two-stage laser wakefield accelerator.
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Submitted 21 August, 2007;
originally announced August 2007.
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Using ultra-short pulses to determine particle size and density distributions
Authors:
Chris J. Lee,
Peter J. M. van der Slot,
Klaus. -J. Boller
Abstract:
We analyze the time dependent response of strongly scattering media (SSM) to ultra-short pulses of light. A random walk technique is used to model the optical scattering of ultra-short pulses of light propagating through media with random shapes and various packing densities. The pulse spreading was found to be strongly dependent on the average particle size, particle size distribution, and the…
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We analyze the time dependent response of strongly scattering media (SSM) to ultra-short pulses of light. A random walk technique is used to model the optical scattering of ultra-short pulses of light propagating through media with random shapes and various packing densities. The pulse spreading was found to be strongly dependent on the average particle size, particle size distribution, and the packing fraction. We also show that the intensity as a function of time-delay can be used to analyze the particle size distribution and packing fraction of an optically thick sample independently of the presence of absorption features. Finally, we propose an all new way to measure the shape of ultra-short pulses that have propagated through a SSM.
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Submitted 1 August, 2007;
originally announced August 2007.
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Ponderomotive scattering of an electron-bunch before injection into a laser wakefield
Authors:
A. G. Khachatryan,
M. J. H. Luttikhof,
F. A. van Goor,
K. -J. Boller
Abstract:
For the purpose of laser wakefield acceleration, it turned out that also the injection of electron bunches longer than a plasma wavelength can generate accelerated femtosecond bunches with relatively low energy spread. This is of high interest because such injecting bunches can be provided, e.g., by state-of-the-art photo cathode RF guns. Here we point out that when an e-bunch is injected in the…
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For the purpose of laser wakefield acceleration, it turned out that also the injection of electron bunches longer than a plasma wavelength can generate accelerated femtosecond bunches with relatively low energy spread. This is of high interest because such injecting bunches can be provided, e.g., by state-of-the-art photo cathode RF guns. Here we point out that when an e-bunch is injected in the wakefield it is important to take into account the ponderomotive scattering of the injecting bunch by the laser pulse in the vacuum region located in front of the plasma. At low energies of the injected bunch this scattering results in a significant drop of the collection efficiency. Larger collection efficiency can by reached with lower intensity laser pulses and relatively high injection energies. We also estimate the minimum trapping energy for the injected electrons and the length of the trapped bunch.
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Submitted 7 July, 2006;
originally announced July 2006.
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Numerical study of the normal current density behaviour in a narrow - gap glow discharge
Authors:
S. A. Starostin,
P. J. M. Peters,
E. Kindel,
A. V. Azarov,
S. V. Mitko,
K. J. Boller
Abstract:
A numerical study of normal glow discharge properties was performed in the case of small electrodes separations (0.05-0.4 cm) and moderate gas pressures (10-46 Torr). A recently observed new experimental effect of a considerable reduction in the normal current density for smaller discharge lengths was analyzed both by means of 2D fluid model and by a minimal 1D drift model of gas discharge. A go…
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A numerical study of normal glow discharge properties was performed in the case of small electrodes separations (0.05-0.4 cm) and moderate gas pressures (10-46 Torr). A recently observed new experimental effect of a considerable reduction in the normal current density for smaller discharge lengths was analyzed both by means of 2D fluid model and by a minimal 1D drift model of gas discharge. A good agreement between theoretical and experimental behaviour was demonstrated. An influence of the electrodes separation and of the gas heating on the value of the normal current density is discussed.
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Submitted 9 September, 2004;
originally announced September 2004.