Fast emitting nanocomposites for high-resolution ToF-PET imaging based on multicomponent scintillators
Authors:
Matteo Orfano,
Fiammetta Pagano,
Ilaria Mattei,
Francesca Cova,
Valeria Secchi,
Silvia Bracco,
Edith Rogers,
Luca Barbieri,
Roberto Lorenzi,
Gregory Bizarri,
Etiennette Auffray,
Angelo Monguzzi
Abstract:
Time-of-Flight Positron Emission Tomography is a medical imaging technique, based on the detection of two back-to-back γ-photons generated from radiotracers injected in the body. Its limit is the ability of employed scintillation detectors to discriminate in time the arrival of γ-pairs, i.e. the coincidence time resolution (CTR). A CTR < 50 ps that would enable fast imaging with ultralow radiotrac…
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Time-of-Flight Positron Emission Tomography is a medical imaging technique, based on the detection of two back-to-back γ-photons generated from radiotracers injected in the body. Its limit is the ability of employed scintillation detectors to discriminate in time the arrival of γ-pairs, i.e. the coincidence time resolution (CTR). A CTR < 50 ps that would enable fast imaging with ultralow radiotracer dose. Monolithic materials do not have simultaneously the required high light output and fast emission characteristics, thus the concept of scintillating heterostructure is proposed, where the device is made of a dense scintillator coupled to a fast-emitting light material. Here we present a composite polymeric scintillator, whose density has been increased upon addition of hafnium oxide nanoparticles. This enhanced by +300% its scintillation yield, surpassing commercial plastic scintillators. The nanocomposite is coupled to bismuth germanate oxide (BGO) realizing a multilayer scintillator. We observed the energy sharing between its components, which activate the nanocomposite fast emission enabling a net CTR improvement of 25% with respect to monolithic BGO. These results demonstrate that a controlled loading with dense nanomaterials is an excellent strategy to enhance the performance of polymeric scintillators for their use in advanced radiation detection and imaging technologies.
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Submitted 26 September, 2023;
originally announced September 2023.
Cryogenic Scintillation Properties of n-Type GaAs for the Direct Detection of MeV/c2 Dark Matter
Authors:
S. Derenzo,
E. Bourret,
S. Hanrahan,
G. Bizarri
Abstract:
This paper is the first report of n-type GaAs as a cryogenic scintillation radiation detector for the detection of electron recoils from interacting dark matter (DM) particles in the poorly explored MeV/c2 mass range. Seven GaAs samples from two commercial suppliers and with different silicon and boron concentrations were studied for their low temperature optical and scintillation properties. All…
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This paper is the first report of n-type GaAs as a cryogenic scintillation radiation detector for the detection of electron recoils from interacting dark matter (DM) particles in the poorly explored MeV/c2 mass range. Seven GaAs samples from two commercial suppliers and with different silicon and boron concentrations were studied for their low temperature optical and scintillation properties. All samples are n-type even at low temperatures and exhibit emission between silicon donors and boron acceptors that peaks at 1.33 eV (930 nm). The lowest excitation band peaks at 1.44 eV (860 nm) and the overlap between the emission and excitation bands is small. The X-ray excited luminosities range from 7 to 43 photons/keV. Thermally stimulated luminescence measurements show that n-type GaAs does not accumulate metastable radiative states that could cause afterglow. Further development and use with cryogenic photodetectors promises a remarkable combination of large target size, ultra-low backgrounds, and a sensitivity to electron recoils of a few eV that would be produced by DM particles as light as a few MeV/c2.
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Submitted 26 February, 2018;
originally announced February 2018.
