Showing 1–10 of 10 results for author: Billet, M

Micro-Transfer Printed Continuous-Wave and Mode-Locked Laser Integration at 800 nm on a Silicon Nitride Platform

Authors: Max Kiewiet, Stijn Cuyvers, Maximilien Billet, Konstantinos Akritidis, Valeria Bonito Oliva, Gaudhaman Jeevanandam, Sandeep Saseendran, Manuel Reza, Pol Van Dorpe, Roelof Jansen, Joost Brouckaert, Günther Roelkens, Kasper Van Gasse, Bart Kuyken

Abstract: Applications such as augmented and virtual reality (AR/VR), optical atomic clocks, and quantum computing require photonic integration of (near-)visible laser sources to enable commercialization at scale. The heterogeneous integration of III-V optical gain materials with low-loss silicon nitride waveguides enables complex photonic circuits with low-noise lasers on a single chip. Previous such demon… ▽ More Applications such as augmented and virtual reality (AR/VR), optical atomic clocks, and quantum computing require photonic integration of (near-)visible laser sources to enable commercialization at scale. The heterogeneous integration of III-V optical gain materials with low-loss silicon nitride waveguides enables complex photonic circuits with low-noise lasers on a single chip. Previous such demonstrations are mostly geared towards telecommunication wavelengths. At shorter wavelengths, limited options exist for efficient light coupling between III-V and silicon nitride waveguides. Recent advances in wafer-bonded devices at these wavelengths require complex coupling structures and suffer from poor heat dissipation. Here, we overcome these challenges and demonstrate a wafer-scale micro-transfer printing method integrating functional III-V devices directly onto the silicon substrate of a commercial silicon nitride platform. We show butt-coupling of efficient GaAs-based amplifiers operating at 800 nm with integrated saturable absorbers to silicon nitride cavities. This resulted in extended-cavity continuous-wave and mode-locked lasers generating pulse trains with repetition rates ranging from 3.2 to 9.2 GHz and excellent passive stability with a fundamental radio-frequency linewidth of 519 Hz. These results show the potential to build complex, high-performance fully-integrated laser systems at 800 nm using scalable manufacturing, promising advances for AR/VR, nonlinear photonics, timekeeping, quantum computing, and beyond. △ Less

Submitted 23 April, 2025; originally announced April 2025.

Comments: 9 pages main article, 7 pages supplementary. 4 main figures, 9 supplementary figures

A high-speed heterogeneous lithium tantalate silicon photonics platform

Authors: Margot Niels, Tom Vanackere, Ewoud Vissers, Tingting Zhai, Patrick Nenezic, Jakob Declercq, Cédric Bruynsteen, Shengpu Niu, Arno Moerman, Olivier Caytan, Nishant Singh, Sam Lemey, Xin Yin, Sofie Janssen, Peter Verheyen, Neha Singh, Dieter Bode, Martin Davi, Filippo Ferraro, Philippe Absil, Sadhishkumar Balakrishnan, Joris Van Campenhout, Günther Roelkens, Bart Kuyken, Maximilien Billet

Abstract: The rapid expansion of cloud computing and artificial intelligence has driven the demand for faster optical components in data centres to unprecedented levels. A key advancement in this field is the integration of multiple photonic components onto a single chip, enhancing the performance of optical transceivers. Here, silicon photonics, benefiting from mature fabrication processes, has gained prom… ▽ More The rapid expansion of cloud computing and artificial intelligence has driven the demand for faster optical components in data centres to unprecedented levels. A key advancement in this field is the integration of multiple photonic components onto a single chip, enhancing the performance of optical transceivers. Here, silicon photonics, benefiting from mature fabrication processes, has gained prominence. The platform combines modulators, switches, photodetectors and low-loss waveguides on a single chip. However, emerging standards like 1600ZR+ potentially exceed the capabilities of silicon-based modulators. To address these limitations, thin-film lithium niobate has been proposed as an alternative to silicon photonics, offering a low voltage-length product and exceptional high-speed modulation properties. More recently, the first demonstrations of thin-film lithium tantalate circuits have emerged, addressing some of the disadvantages of lithium niobate enabling a reduced bias drift and enhanced resistance to optical damage. As such, making it a promising candidate for next-generation photonic platforms. However, a persistent drawback of such platforms is the lithium contamination, which complicates integration with CMOS fabrication processes. Here, we present for the first time the integration of lithium tantalate onto a silicon photonics chip. This integration is achieved without modifying the standard silicon photonics process design kit. Our device achieves low half-wave voltage (3.5 V), low insertion loss (2.9 dB) and high-speed operation (> 70 GHz), paving the way for next-gen applications. By minimising lithium tantalate material use, our approach reduces costs while leveraging existing silicon photonics technology advancements, in particular supporting ultra-fast monolithic germanium photodetectors and established process design kits. △ Less

Submitted 14 March, 2025; v1 submitted 13 March, 2025; originally announced March 2025.

Centimetre-Scale Micro-Transfer Printing to enable Heterogeneous Integration of Thin Film Lithium Niobate with Silicon Photonics

Authors: Margot Niels, Tom Vanackere, Tom Vandekerckhove, Stijn Poelman, Tom Reep, Günther Roelkens, Maximilien Billet, Bart Kuyken

Abstract: The integrated photonics CMOS-compatible silicon nitride (SiN) platform is praised for its low propagation loss, but is limited by its lack of active functionalities such as a strong Pockels coefficient and intrinsic \c{hi}(2) nonlinearity. In this paper, we demonstrate the integration of centimetre-long thin-film lithium niobate (TFLN) devices on a SiN platform using the micro-transfer printing (… ▽ More The integrated photonics CMOS-compatible silicon nitride (SiN) platform is praised for its low propagation loss, but is limited by its lack of active functionalities such as a strong Pockels coefficient and intrinsic \c{hi}(2) nonlinearity. In this paper, we demonstrate the integration of centimetre-long thin-film lithium niobate (TFLN) devices on a SiN platform using the micro-transfer printing (uTP) method. At a wavelength of 1550 nm, propagation losses of approximately 0.9 dB/cm and transition losses of 1.8 dB per facet were measured. Furthermore, the TFLN was integrated into an imbalanced push-pull Mach-Zehnder modulator, achieving a Vπ of 3.2 V. The electro-optics nature of the observed modulation is confirmed by measuring the device up to 35 GHz, showing that the printing does not affect the high-speed LN properties. △ Less

Submitted 20 February, 2025; v1 submitted 19 December, 2024; originally announced December 2024.

Journal ref: Opt. Mater. Express 15, 531-540 (2025)

Integrated resonant electro-optic comb enabled by platform-agnostic laser integration

Authors: Isaac Luntadila Lufungula, Amirhassan Shams-Ansari, Dylan Renaud, Camiel Op de Beeck, Stijn Cuyvers, Stijn Poelman, Maximilien Billet, Gunther Roelkens, Marko Loncar, Bart Kuyken

Abstract: The field of integrated photonics has significantly impacted numerous fields including communication, sensing, and quantum physics owing to the efficiency, speed, and compactness of its devices. However, the reliance on off-chip bulk lasers compromises the compact nature of these systems. While silicon photonics and III-V platforms have established integrated laser technologies, emerging demands f… ▽ More The field of integrated photonics has significantly impacted numerous fields including communication, sensing, and quantum physics owing to the efficiency, speed, and compactness of its devices. However, the reliance on off-chip bulk lasers compromises the compact nature of these systems. While silicon photonics and III-V platforms have established integrated laser technologies, emerging demands for ultra-low optical loss, wider bandgaps, and optical nonlinearities necessitate other platforms. Developing integrated lasers on less mature platforms is arduous and costly due to limited throughput or unconventional process requirements. In response, we propose a novel platform-agnostic laser integration technique utilizing a singular design and process flow, applicable without modification to a diverse range of platforms. Leveraging a two-step micro-transfer printing method, we achieve nearly identical laser performance across platforms with refractive indices between 1.7 and 2.5. Experimental validation demonstrates strikingly similar laser characteristics between devices processed on lithium niobate and silicon nitride platforms. Furthermore, we showcase the integration of a laser with a resonant electro-optic comb generator on the thin-film lithium niobate platform, producing over 80 comb lines spanning 12 nm. This versatile technique transcends platform-specific limitations, facilitating applications like microwave photonics, handheld spectrometers, and cost-effective Lidar systems, across multiple platforms. △ Less

Submitted 8 February, 2024; v1 submitted 29 January, 2024; originally announced January 2024.

Comments: 23 pages, 13 figures

Micro-transfer-printed Thin film lithium niobate (TFLN)-on-Silicon Ring Modulator

Authors: Ying Tan, Shengpu Niu, Maximilien Billet, Nishant Singh, Margot Niels, Tom Vanackere, Joris Van Kerrebrouck, Gunther Roelkens, Bart Kuyken, Dries Van Thourhout

Abstract: Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lit… ▽ More Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lithium niobate brings TFLN to well-established silicon ecosystem by easy "pick and place", which showcases immense potential in constructing high-density, cost-effective, highly versatile heterogeneous integrated circuits. Here, we demonstrated for the first time a micro-transfer-printed thin film lithium niobate (TFLN)-on-silicon ring modulator, which is an important step towards dense integration of performant lithium niobate modulators with compact and scalable silicon circuity. The presented device exhibits an insertion loss of -1.5dB, extinction ratio of -37dB, electro-optical bandwidth of 16GHz and modulation rates up to 45Gps. △ Less

Submitted 26 November, 2023; originally announced November 2023.

Comments: 8 figures,10 pages. ACS Photonics 2024

Report number: DOI: 10.1021/acsphotonics.3c01869

Reliable micro-transfer printing method for heterogeneous integration of lithium niobate and semiconductor thin films

Authors: Tom Vandekerckhove, Tom Vanackere, Jasper De Witte, Stijn Cuyvers, Luis Reis, Maximilien Billet, Günther Roelkens, Stéphane Clemmen, Bart Kuyken

Abstract: High-speed Pockels modulation and second-order nonlinearities are key components in optical systems, but CMOS-compatible platforms like silicon and silicon nitride lack these capabilities. Micro-transfer printing of thin-film lithium niobate offers a solution, but suspending large areas of thin films for long interaction lengths and high-Q resonators is challenging, resulting in a low transfer yie… ▽ More High-speed Pockels modulation and second-order nonlinearities are key components in optical systems, but CMOS-compatible platforms like silicon and silicon nitride lack these capabilities. Micro-transfer printing of thin-film lithium niobate offers a solution, but suspending large areas of thin films for long interaction lengths and high-Q resonators is challenging, resulting in a low transfer yield. We present a new source preparation method that enables reliable transfer printing of thin-film lithium niobate. We demonstrate its versatility by successfully applying it to gallium phosphide and silicon, and provide an estimate of the transfer yield by subsequently printing 25 lithium niobate films without fail. △ Less

Submitted 26 April, 2023; originally announced April 2023.

Comments: 12 pages, 8 figures

Supercontinuum generation assisted by dispersive waves trapping in dispersion-managed integrated silicon waveguides

Authors: Junxiong Wei, Charles Ciret, Maximilien Billet, François Leo, Bart Kuyken, Simon-Pierre Gorza

Abstract: Compact chip-scale comb sources are of significant interest for many practical applications. Here, we experimentally study the generation of supercontinuum (SC) in an axially varying integrated waveguide. We show that the local tuning of the dispersion enables the continuous blue shift of dispersive waves thanks to their trapping by the strongly compressed pump pulse. This mechanism provides new i… ▽ More Compact chip-scale comb sources are of significant interest for many practical applications. Here, we experimentally study the generation of supercontinuum (SC) in an axially varying integrated waveguide. We show that the local tuning of the dispersion enables the continuous blue shift of dispersive waves thanks to their trapping by the strongly compressed pump pulse. This mechanism provides new insight into supercontinuum generation in a dispersion varying integrated waveguide. Pumped close to 2.2 $μ$m in the femtosecond regime and at a pulse energy of $\sim$ 4 pJ, the output spectrum extends from 1.1 $μ$m up to 2.76 $μ$m and shows good coherence properties. Octave-spanning SC is also observed at input energy as low as $\sim$ 0.9 pJ. We show that the supercontinuum is more robust against variations of the input pulse parameters and is also spectrally flatter in our numerically optimized waveguide than in fixed-width waveguides. This research demonstrates the potential of dispersion varying waveguides for coherent SC generation and paves the way for integrated low power applications, such as chip-scale frequency comb generation, precision spectroscopy, optical frequency metrology, and wide-band wavelength division multiplexing in the near-infrared. △ Less

Submitted 27 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Applied 14, 054045 (2020)

Ultra-fast quantum-well infared photodetectors operating at 10μm with flat response up to 70GHz at room temperature

Authors: M. Hakl, Q. Y. Lin, S. Lepillet, M. Billet, J-F. Lampin, S. Pirotta, R. Colombelli, W. J. Wan, J. C. Cao, H. Li, E. Peytavit, S. Barbieri

Abstract: III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As multi-quantum-well heterostructure to demonstrate heterodyne detection at 10um wavelength with a nearly flat frequency response up to 70GHz at room temperature, solely limited… ▽ More III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As multi-quantum-well heterostructure to demonstrate heterodyne detection at 10um wavelength with a nearly flat frequency response up to 70GHz at room temperature, solely limited by the measurement system bandwidth. This is the broadest RF-bandwidth reported to date for a quantum-well mid-infrared photodetector. Responsivities of 0.15A/W and 1.5A/W are obtained at 300K and 77K respectively. To allow ultrafast operation and illumination at normal incidence, the detector consists of a 50Ohm coplanar waveguide, monolithically integrated with a 2D-array of sub-wavelength antennas, electrically interconnected by suspended wires. With this device architecture we obtain a parasitic capacitance of ~30fF, corresponding to the static capacitance of the antennas, yielding a RC-limited 3dB cutoff frequency >150GHz at 300K, extracted with a small-signal equivalent circuit model. Using this model, we quantitively reproduce the detector frequency response and find intrinsic roll-off time constants as low as 1ps at room temperature. △ Less

Submitted 5 January, 2021; v1 submitted 1 July, 2020; originally announced July 2020.

Comments: The first version was updated, to correct some typos and add FigS5(b) to clarify the derivation of the detector circuit model

Full Vectorial Modeling of Second Harmonic Generation in III-V-on-insulator Nanowires

Authors: Charles Ciret, Koen Alexander, Nicolas Poulvellarie, Maximilien Billet, Carlos Mas Arabi, Bart Kuyken, Simon-Pierre Gorza, Francois Leo

Abstract: We model second harmonic generation in subwavelength III-V-on-insulator waveguides. The large index contrast induces strong longitudinal electric field components that play an important role in the nonlinear conversion. We show that many different waveguide dimensions are suitable for efficient conversion of a fundamental quasi-TE pump mode around the 1550 nm telecommunication wavelength to a high… ▽ More We model second harmonic generation in subwavelength III-V-on-insulator waveguides. The large index contrast induces strong longitudinal electric field components that play an important role in the nonlinear conversion. We show that many different waveguide dimensions are suitable for efficient conversion of a fundamental quasi-TE pump mode around the 1550 nm telecommunication wavelength to a higher-order second harmonic mode. △ Less

Submitted 7 January, 2020; originally announced January 2020.

Second Harmonic Generation Enabled by Longitudinal Electric Field Components in Photonic Wire Waveguides

Authors: Nicolas Poulvellarie, Utsav Dave, Koen Alexander, Charles Ciret, Maximilien Billet, Carlos Mas Arabi, Fabrice Raineri, Sylvain Combrie, Alfredo De Rossi, Gunther Roelkens, Simon-Pierre Gorza, Bart Kuyken, Francois Leo

Abstract: We investigate type I second harmonic generation in III-V semiconductor wire waveguides aligned with a crystallographic axis. In this direction, because of the single nonzero tensor element of III-V semiconductors, only frequency conversion by mixing with the longitudinal components of the optical fields is allowed. We experimentally study the impact of the propagation direction on the conversion… ▽ More We investigate type I second harmonic generation in III-V semiconductor wire waveguides aligned with a crystallographic axis. In this direction, because of the single nonzero tensor element of III-V semiconductors, only frequency conversion by mixing with the longitudinal components of the optical fields is allowed. We experimentally study the impact of the propagation direction on the conversion efficiency and confirm the role played by the longitudinal components through the excitation of an antisymmetric second harmonic higher order mode. △ Less

Submitted 8 May, 2020; v1 submitted 6 January, 2020; originally announced January 2020.

Journal ref: Phys. Rev. A 102, 023521 (2020)