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Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Authors:
Matteo Canciani,
Stefano Vichi,
Oksana Koplak,
Sergio Bietti,
Stefano Sanguinetti
Abstract:
A novel approach for the measurement of the Nitrogen active species generated by a plasma source in the molecular beam epitaxy environment is here presented. The method is based on the analysis of the variations in the optical signal measured by a pyrometer during a two step, Gallium rich and Nitrogen controlled, growth modes. The method permits a precise, quantitative and direct measurement of th…
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A novel approach for the measurement of the Nitrogen active species generated by a plasma source in the molecular beam epitaxy environment is here presented. The method is based on the analysis of the variations in the optical signal measured by a pyrometer during a two step, Gallium rich and Nitrogen controlled, growth modes. The method permits a precise, quantitative and direct measurement of the flux of active species as a function of the plasma generation parameters of the cell: nitrogen gas flux and RF-power.
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Submitted 20 December, 2024;
originally announced December 2024.
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Conduction band resonant states absorption for quantum dot infrared detectors operating at room temperature
Authors:
Stefano Vichi,
Shigeo Asahi,
Sergio Bietti,
Artur Tuktamyshev,
Alexey Fedorov,
Takashi Kita,
Stefano Sanguinetti
Abstract:
Long Wavelenght infrared devices, despite growing interest due to a wide range of applications in commercial, public, and academic sectors, are still struggling to achieve significant improvements over well-established technologies like HgCdTe detectors. Devices based on quantum nanostructures remain non competitive due to unresolved drawbacks, the most significant being the need to cool down to l…
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Long Wavelenght infrared devices, despite growing interest due to a wide range of applications in commercial, public, and academic sectors, are still struggling to achieve significant improvements over well-established technologies like HgCdTe detectors. Devices based on quantum nanostructures remain non competitive due to unresolved drawbacks, the most significant being the need to cool down to liquid nitrogen temperatures to improve the signal-to-noise ratio. In this work, we demonstrate an innovative solution to surpass the current generation of quantum dot-based detectors by exploiting the absorption from quantum dot localized states to resonant states in the continuum, that is states in the semiconductor conduction band with an enhanced probability density in the quantum dot region. This unprecedented approach takes advantage of the unique properties of such states to massively enhance carrier extraction, allowing to overcome one of the most crucial drawbacks of quantum dot-based infrared detectors. This innovative solution is discussed here from both theoretical and experimental perspectives. The measured room temperature operation with high detectivity demonstrates that exploiting resonant states absorption in quantum dots offers the long-sought solution for the next generation of infrared photodetectors.
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Submitted 25 July, 2024;
originally announced July 2024.
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Optically controlled dual-band quantum dot infrared photodetector
Authors:
Stefano Vichi,
Sergio Bietti,
Francesco Basso Basset,
Artur Tuktamyshev,
Alexey Fedorov,
Stefano Sanguinetti
Abstract:
We present the design for a novel type of dual-band photodetector in the thermal infrared spectral range, the Optically Controlled Dual-band quantum dot Infrared Photodetector (OCDIP). This concept is based on a quantum dot ensemble with a unimodal size distribution, whose absorption spectrum can be controlled by optically-injected carriers. An external pumping laser varies the electron density in…
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We present the design for a novel type of dual-band photodetector in the thermal infrared spectral range, the Optically Controlled Dual-band quantum dot Infrared Photodetector (OCDIP). This concept is based on a quantum dot ensemble with a unimodal size distribution, whose absorption spectrum can be controlled by optically-injected carriers. An external pumping laser varies the electron density in the QDs, permitting to control the available electronic transitions and thus the absorption spectrum. We grew a test sample which we studied by AFM and photoluminescence. Based on the experimental data, we simulated the infrared absorption spectrum of the sample, which showed two absorption bands at 5.85 um and 8.98 um depending on the excitation power.
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Submitted 5 March, 2021;
originally announced March 2021.
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Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
Authors:
A. Tuktamyshev,
A. Fedorov,
S. Bietti,
S. Vichi,
K. D. Zeuner,
K. D. Jöns,
D. Chrastina,
S. Tsukamoto,
V. Zwiller,
M. Gurioli,
S. Sanguinetti
Abstract:
We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100 nm InAlAs metamorphic layer with In content > 50% is already almost fully rel…
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We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100 nm InAlAs metamorphic layer with In content > 50% is already almost fully relaxed with a very flat surface. The quantum dots emit at the 1.3 μm telecom O-band with the fine structure splitting as low as 16 μeV, thus making them suitable as photon sources in quantum communication networks using entangled photons.
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Submitted 1 April, 2021; v1 submitted 28 January, 2021;
originally announced January 2021.
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Metal Droplet Effects on the Composition of Ternary Nitrides
Authors:
Mani Azadmand,
Stefano Vichi,
Sergio Bietti,
Daniel Chrastina,
Emiliano Bonera,
Maurizio Acciarri,
Alexey Fedorov,
Shiro Tsukamoto,
Richard Nötzel,
Stefano Sanguinetti
Abstract:
We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong reduction of the In incorporation when the surface is covered by metal droplets. The such reduction increases with the droplet density and the droplet surface coverage. We explain this phenomenonology via a model that consi…
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We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong reduction of the In incorporation when the surface is covered by metal droplets. The such reduction increases with the droplet density and the droplet surface coverage. We explain this phenomenonology via a model that considers droplet effects on the incorporation of In and Ga adatoms into the crystal by taking into account the combined effects of the higher mobility of In, with respect to Ga, and to the vapor-liquid-solid growth that takes place under the droplet by direct impingement of nitrogen. The proposed model is general and can be extended to describe the incorporation of adatoms during the growth of the material class of ternary compounds when droplets are present on the surface.
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Submitted 16 July, 2019;
originally announced July 2019.
