Showing 1–5 of 5 results for author: Bianconi, S

Full C- and L-band tunable erbium-doped integrated lasers via scalable manufacturing

Authors: Xinru Ji, Xuan Yang, Yang Liu, Zheru Qiu, Grigory Lihachev, Simone Bianconi, Jiale Sun, Andrey Voloshin, Taegon Kim, Joseph C. Olson, Tobias J. Kippenberg

Abstract: Erbium (Er) ions are the gain medium of choice for fiber-based amplifiers and lasers, offering a long excited-state lifetime, slow gain relaxation, low amplification nonlinearity and noise, and temperature stability compared to semiconductor-based platforms. Recent advances in ultra-low-loss silicon nitride (Si$_3$N$_4$) photonic integrated circuits, combined with ion implantation, have enabled th… ▽ More Erbium (Er) ions are the gain medium of choice for fiber-based amplifiers and lasers, offering a long excited-state lifetime, slow gain relaxation, low amplification nonlinearity and noise, and temperature stability compared to semiconductor-based platforms. Recent advances in ultra-low-loss silicon nitride (Si$_3$N$_4$) photonic integrated circuits, combined with ion implantation, have enabled the realization of high-power on-chip Er amplifiers and lasers with performance comparable to fiber-based counterparts, supporting compact photonic systems. Yet, these results are limited by the high (2 MeV) implantation beam energy required for tightly confined Si$_3$N$_4$ waveguides (700 nm height), preventing volume manufacturing of Er-doped photonic integrated circuits. Here, we overcome these limitations and demonstrate the first fully wafer-scale, foundry-compatible Er-doped photonic integrated circuit-based tunable lasers. Using 200 nm-thick Si$_3$N$_4$ waveguides, we reduce the ion beam energy requirement to below 500 keV, enabling efficient wafer-scale implantation with an industrial 300 mm ion implanter. We demonstrate a laser wavelength tuning range of 91 nm, covering nearly the entire optical C- and L-bands, with fiber-coupled output power reaching 36 mW and an intrinsic linewidth of 95 Hz. The temperature-insensitive properties of erbium ions allowed stable laser operation up to 125$^{\circ}$C and lasing with less than 15 MHz drift for over 6 hours at room temperature using a remote fiber pump. The fully scalable, low-cost fabrication of Er-doped waveguide lasers opens the door for widespread adoption in coherent communications, LiDAR, microwave photonics, optical frequency synthesis, and free-space communications. △ Less

Submitted 12 January, 2025; originally announced January 2025.

Monolithic piezoelectrically tunable hybrid integrated laser with sub-fiber laser coherence

Authors: Andrey Voloshin, Anat Siddharth, Simone Bianconi, Alaina Attanasio, Andrea Bancora, Vladimir Shadymov, Sebastien Leni, Rui Ning Wang, Johann Riemensberger, Sunil A. Bhave, Tobias J. Kippenberg

Abstract: Ultra-low noise lasers are essential tools in a wide variety of applications, including data communication, light detection and ranging (LiDAR), quantum computing and sensing, and optical metrology. Recent advances in integrated photonics, specifically the development of ultra-low loss silicon nitride (Si$_3$N$_4$) platform, have allowed attaining performance that exceeds conventional legacy laser… ▽ More Ultra-low noise lasers are essential tools in a wide variety of applications, including data communication, light detection and ranging (LiDAR), quantum computing and sensing, and optical metrology. Recent advances in integrated photonics, specifically the development of ultra-low loss silicon nitride (Si$_3$N$_4$) platform, have allowed attaining performance that exceeds conventional legacy laser systems, including the phase noise of fiber lasers. This platform can moreover be combined with monolithic integration of piezoelectrical materials, enabling frequency agile low noise lasers. However, this approach has to date not surpassed the trade-off between ultra-low frequency noise and frequency agility. Here we overcome this challenge and demonstrate a fully integrated laser based on the Si$_3$N$_4$ platform with frequency noise lower than that of a fiber laser, while maintaining the capability for high-speed modulation of the laser frequency. The laser achieves an output power of 30 mW with an integrated linewidth of 4.3 kHz and an intrinsic linewidth of 3 Hz, demonstrating phase noise performance that is on par with or lower than commercial fiber lasers. Frequency agility is accomplished via a monolithically integrated piezoelectric aluminum nitride (AlN) micro-electro-mechanical system (MEMS) actuator, which enables a flat frequency actuation bandwidth extending up to 400 kHz. This combination of ultra-low noise and frequency agility is a useful feature enabling tight laser locking for frequency metrology, fiber sensing, and coherent sensing applications. Our results demonstrate the ability of 'next generation' integrated photonic circuits (beyond silicon) to exceed the performance of legacy laser systems in terms of coherence and frequency actuation. △ Less

Submitted 28 November, 2024; originally announced November 2024.

Ultrafast tunable photonic integrated Pockels extended-DBR laser

Authors: Anat Siddharth, Simone Bianconi, Rui Ning Wang, Zheru Qiu, Andrey S. Voloshin, Mohammad J. Bereyhi, Johann Riemensberger, Tobias J. Kippenberg

Abstract: Frequency-agile lasers that can simultaneously feature low noise characteristics as well as fast mode hop-free frequency tuning are keystone components for applications ranging from frequency modulated continuous wave (FMCW) LiDAR, to coherent optical communication and gas sensing. The hybrid integration of III-V gain media with low-loss photonic integrated circuits (PICs) has recently enabled int… ▽ More Frequency-agile lasers that can simultaneously feature low noise characteristics as well as fast mode hop-free frequency tuning are keystone components for applications ranging from frequency modulated continuous wave (FMCW) LiDAR, to coherent optical communication and gas sensing. The hybrid integration of III-V gain media with low-loss photonic integrated circuits (PICs) has recently enabled integrated lasers with faster tuning and lower phase noise than the best legacy systems, including fiber lasers. In addition, lithium niobate on insulator (LNOI) PICs have enabled to exploit the Pockels effect to demonstrate self-injection locked hybrid lasers with tuning rates reaching peta-hertz per second. However, Pockels-tunable laser archetypes relying on high-Q optical microresonators have thus far only achieved limited output powers, are difficult to operate and stabilize due to the dynamics of self-injection locking, and require many analog control parameters. Here, we overcome this challenge by leveraging an extended distributed Bragg reflector (E-DBR) architecture to demonstrate a simple and turn-key operable frequency-agile Pockels laser that can be controlled with single analog operation and modulation inputs. Our laser supports a continuous mode hop-free tuning range of over 10 GHz with good linearity and flat actuation bandwidth up to 10 MHz, while achieving over 15 mW in-fiber output power at 1545 nm and kHz-level intrinsic linewidth, a combination unmet by legacy bulk lasers. This hybrid laser design combines an inexpensive reflective semiconductor optical amplifier (RSOA) with an electro-optic DBR PIC manufactured at wafer-scale on a LNOI platform. We showcase the performance and flexibility of this laser in proof-of-concept coherent optical ranging (FMCW LiDAR) demonstration, achieving a 4 cm distance resolution and in a hydrogen cyanide spectroscopy experiment. △ Less

Submitted 3 August, 2024; originally announced August 2024.

Comments: 10 pages, 5 figures

Fast and Efficient Type-II Phototransistors Integrated on Silicon

Authors: Lining Liu, Simone Bianconi, Skylar Wheaton, Nathaniel Coirier, Farah Fahim, Hooman Mohseni

Abstract: Increasing the efficiency and reducing the footprint of on-chip photodetectors enables dense optical interconnects for emerging computational and sensing applications. Avalanche photodetectors (APD) are currently the dominating on-chip photodetectors. However, the physics of avalanche multiplication leads to low energy efficiencies and prevents device operation at a high gain, due to a high excess… ▽ More Increasing the efficiency and reducing the footprint of on-chip photodetectors enables dense optical interconnects for emerging computational and sensing applications. Avalanche photodetectors (APD) are currently the dominating on-chip photodetectors. However, the physics of avalanche multiplication leads to low energy efficiencies and prevents device operation at a high gain, due to a high excess noise, resulting in the need for electrical amplifiers. These properties significantly increase power consumption and footprint of current optical receivers. In contrast, heterojunction phototransistors (HPT) exhibit high efficiency and very small excess noise at high gain. However, HPT's gain-bandwidth product (GBP) is currently inferior to that of APDs at low optical powers. Here, we demonstrate that the type-II energy band alignment in an antimony-based HPT results in a significantly smaller junction capacitance and higher GBP at low optical powers. We used a CMOS-compatible heterogeneous integration method to create compact optical receivers on silicon with an energy efficiency that is about one order of magnitude higher than that of the best reported integrated APDs on silicon at a similar GBP of 270 GHz. Bitrate measurements show data rate spatial density above 800 Tbps per mm2, and an energy-per-bit consumption of only 6 fJ/bit at 3 Gbps. These unique features suggest new opportunities for creating highly efficient and compact on-chip optical receivers based on devices with type-II band alignment. △ Less

Submitted 7 November, 2023; originally announced November 2023.

Giant Conductivity Modulation of Aluminum Oxide using Focused Ion Beam

Authors: Simone Bianconi, Min-Su Park, Hooman Mohseni

Abstract: Precise control of the conductivity of semiconductors through doping has enabled the creation of advanced electronic devices, similarly, the ability to control the conductivity in oxides can enable novel advanced electronic and optoelectronic functionalities. While this was successfully shown for moderately insulating oxides, such as In2O3, a reliable method for increasing the conductivity of high… ▽ More Precise control of the conductivity of semiconductors through doping has enabled the creation of advanced electronic devices, similarly, the ability to control the conductivity in oxides can enable novel advanced electronic and optoelectronic functionalities. While this was successfully shown for moderately insulating oxides, such as In2O3, a reliable method for increasing the conductivity of highly insulating, wide bandgap dielectrics, such as aluminum oxide (Al2O3), has not been reported yet. Al2O3 is a material of significant technological interest, permeating diverse fields of application, thanks to its exceptional mechanical strength and dielectric properties. Here we present a versatile method for precisely changing the conductivity of Al2O3 . Our approach greatly exceeds the magnitude of the best previously reported change of conductivity in an oxide. Our method uses focused ion beam to produce conductive zones with nanoscale resolution within the insulating Al2O3 matrix. We investigated the source of conductivity modulation and identified trap-assisted conduction in the ion damage-induced defects as the main charge transport mechanism. Temperature-dependency of the conductivity and optical characterization of the patterned areas offer further insight into the nature of the conduction mechanism. We also show that the process is extremely reproducible and robust against moderate annealing temperatures and chemical environment. The record conductivity modulation, combined with the nanoscale patterning precision allows the creation of conductive zones within a highly insulating, mechanically hard, chemically inert, and bio-compatible matrix, which could find broad applications in electronics, optoelectronics, and medical implants △ Less

Submitted 18 February, 2019; originally announced February 2019.

Comments: 5 pages, 3 figures