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Hybrid Opto-Electrical Excitation of Spin-Transfer Torque Nano-Oscillators for Advanced Computing
Authors:
Felix Oberbauer,
Tristan Joachim Winkel,
Tim Böhnert,
Marcel S. Claro,
Luana Benetti,
Ihsan Çaha,
Leonard Francis,
Farshad Moradi,
Ricardo Ferreira,
Markus Münzenberg,
Tahereh Sadat Parvini
Abstract:
Neuromorphic computing, inspired by the brain's parallel and energy-efficient processing, offers a transformative approach to artificial intelligence. In this study, we fabricated optimized spin-transfer torque nano-oscillators (STNOs) and investigated their dynamic behaviors using a hybrid excitation scheme combining AC laser illumination and DC bias currents. Laser-induced thermal gradients gene…
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Neuromorphic computing, inspired by the brain's parallel and energy-efficient processing, offers a transformative approach to artificial intelligence. In this study, we fabricated optimized spin-transfer torque nano-oscillators (STNOs) and investigated their dynamic behaviors using a hybrid excitation scheme combining AC laser illumination and DC bias currents. Laser-induced thermal gradients generate pulsed thermoelectric voltages ($V_{\text{AC}}$) via the Tunnel Magneto-Seebeck (TMS) effect, while the addition of bias currents enhances this response, producing both $V_{\text{AC}}$ and a DC component ($V_{\text{DC}}$). Magnetic field sweeps reveal distinct switching between parallel (P) and antiparallel (AP) magnetization states in both voltage components, supporting multistate memory applications. Millivolt-range thermovoltage signals in open-circuit conditions demonstrate CMOS compatibility, enabling simplified, scalable neuromorphic systems. Under biased conditions, enhanced thermovoltage outputs exhibit intriguing phenomena, including spikes correlated with Barkhausen jumps and double-switching behavior, offering insights into magnetization dynamics and vortex transitions. These features resemble neural spiking behavior, suggesting applications in spiking neural networks, reservoir computing, multistate logic, analog computing, and high-resolution sensing. By bridging spintronic phenomena with practical applications, this work provides a versatile platform for next-generation AI technologies and adaptive computing architectures.
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Submitted 21 March, 2025; v1 submitted 1 January, 2025;
originally announced January 2025.
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Non-Volatile Analog Control and Reconfiguration of a Vortex Nano-Oscillator Frequency
Authors:
Maksim Stebliy,
Alex S. Jenkins,
Luana Benetti,
Elvira Paz,
Ricardo Ferreira
Abstract:
Magnetic tunnel junctions are nanoscale devices which have recently attracted interested in the context of frequency multiplexed spintronic neural networks, due to their interesting dynamical properties, which are defined during the fabrication process, and depend on the material parameters and geometry. This paper proposes an approach to extending the functionality of a standard magnetic tunnel j…
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Magnetic tunnel junctions are nanoscale devices which have recently attracted interested in the context of frequency multiplexed spintronic neural networks, due to their interesting dynamical properties, which are defined during the fabrication process, and depend on the material parameters and geometry. This paper proposes an approach to extending the functionality of a standard magnetic tunnel junction (MTJ) by introducing an additional ferromagnet/antiferromagnet (FM/AFM) storage layer (SL) vertically integrated with the standard Vortex MTJ stack into the nanopillar. The magnetostatic field created by this storage layer acts on the free layer and can be used to change its static and dynamic properties. To tune the magnitude and direction of this magnetostatic field, magnetic reconfiguration is carried out through a thermally assisted switching mechanism using a voltage pulse that heats the AFM layer in the SL above the Neel temperature in the presence of an external field. It is experimentally shown that using an MTJ based on a 600 nm diameter nanopillar with a vortex in the free layer, reconfiguration of the SL allows to continuously change the core precession frequency in the 15 MHz range. The reconfigurable analogue storage layer locally affects both the static and dynamic properties of the MTJ free layer, demonstrating vertical 3D integration of additional functionalities into a single MTJ nanopillar.
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Submitted 28 August, 2024; v1 submitted 14 February, 2024;
originally announced February 2024.
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Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics
Authors:
Tahereh Sadat Parvini,
Elvira Paz,
Tim Böhnert,
Alejandro Schulman,
Luana Benetti,
Felix Oberbauer,
Jakob Walowski,
Farshad Moradi,
Ricardo Ferreira,
Markus Münzenberg
Abstract:
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and auto-oscillation behavior. These characteristics demonstrate the potential of STT-MTJs for low-power, high-speed, and reliable spintronic applications, including magn…
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We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and auto-oscillation behavior. These characteristics demonstrate the potential of STT-MTJs for low-power, high-speed, and reliable spintronic applications, including magnetic memory, logic, and signal processing. The only distinguishing factor between the two categories, denoted as A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21 Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs. Our study reveals that B-MTJs exhibit lower critical currents for auto-oscillation than A-MTJs. We found that both stacks have comparable saturation magnetization and anisotropy field, suggesting that the difference in auto-oscillation behavior is due to the higher damping of A-MTJs compared to B-MTJs. To verify this hypothesis, we employed the all-optical time-resolved magneto-optical Kerr effect (TRMOKE) technique, which confirmed that STT-MTJs with lower damping exhibited auto-oscillation at lower critical current values. Additionally, our study aimed to optimize the STT-MTJ performance by investigating the impact of the capping layer on the device's response to electronic and optical stimuli.
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Submitted 30 May, 2023; v1 submitted 22 March, 2023;
originally announced March 2023.
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A semi-analytical model to simulate the spin-diode effect and accelerate its use in neuromorphic computing
Authors:
Chloé Chopin,
Leandro Martins,
Luana Benetti,
Simon de Wergifosse,
Alex Jenkins,
Ricardo Ferreira,
Flavio Abreu Araujo
Abstract:
The spin-diode effect is studied both experimentally and with our original semi-analytical method. The latter is based on an improved version of the Thiele equation approach (TEA) that we combine to micromagnetic simulation data to accurately model the non-linear dynamics of spin-torque vortex oscillator (STVO). This original method, called data-driven Thiele equation approach (DD-TEA), absorbs th…
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The spin-diode effect is studied both experimentally and with our original semi-analytical method. The latter is based on an improved version of the Thiele equation approach (TEA) that we combine to micromagnetic simulation data to accurately model the non-linear dynamics of spin-torque vortex oscillator (STVO). This original method, called data-driven Thiele equation approach (DD-TEA), absorbs the difference between the analytical model and micromagnetic simulations to provide a both ultra-fast and quantitative model. The DD-TEA model predictions also agree very well with the experimental data. The reversal of the spin-diode effect with the chirality of the vortex, the impact of the input current and the origin of a variation at half of the STVO frequency are presented as well as the ability of the model to reproduce the experimental behavior. Finally, the spin-diode effect and its simulation using the DD-TEA model are discussed as a promising perspective in the framework of neuromorphic computing.
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Submitted 27 January, 2023;
originally announced January 2023.
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Room temperature two terminal tunnel magnetoresistance in lateral graphene transistor
Authors:
C. I. L. de Araujo,
H. A. Teixeira,
O. O. Toro,
C. Liao,
J. Borme,
L. C. Benetti,
D. Schafer,
I. S. Brandt,
R. Ferreira,
P. Alpuim,
P. P. Freitas,
A. A. Pasa
Abstract:
We investigate the behavior of both pure spin and spin-polarized currents measured with four probe non-local and two probe local configurations up to room temperature and under external gate voltage in a lateral graphene transistor, produced using a standard large-scale microfabrication process. The high spin diffusion length of pristine graphene in the channel, measured both directly and by the H…
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We investigate the behavior of both pure spin and spin-polarized currents measured with four probe non-local and two probe local configurations up to room temperature and under external gate voltage in a lateral graphene transistor, produced using a standard large-scale microfabrication process. The high spin diffusion length of pristine graphene in the channel, measured both directly and by the Hanle effect, and the tuning of relation between electrode resistance area present in the device architecture, allowed us to observe local tunnel magnetoresistance at room temperature, a new finding for this type of device. Results also indicate that while pure spin currents are less sensitive to temperature variations, spin-polarized current switching by external voltage is more efficient, due to a combination of the Rashba effect and change in carrier mobility by Fermi level shift
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Submitted 20 November, 2021;
originally announced November 2021.
