Showing 1–7 of 7 results for author: Beckers, A

Subthreshold Swing Behavior in Amorphous Indium-Gallium-Zinc-Oxide Transistors from Room to Cryogenic Temperatures

Authors: Hongwei Tang, Attilio Belmonte, Dennis Lin, Ying Zhao, Arnout Beckers, Patrick Verdonck, Harold Dekkers, Subhali Subhechha, Michiel van Setten, Zhuo Chen, Gouri Sankar Kar, Jan Van Houdt, Valeri Afanas'ev

Abstract: While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive analysis of the SS in thin-film transistors with an amorphous indium gallium zinc oxide (IGZO) channel at temperatures from 300 K down to 4 K is presented. Main ob… ▽ More While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive analysis of the SS in thin-film transistors with an amorphous indium gallium zinc oxide (IGZO) channel at temperatures from 300 K down to 4 K is presented. Main observations include: 1) At room temperature (300 K), the devices exhibit a SS of 61 mV/dec, and a low interface trap density (<1011 cm-2), among the best reported values for IGZO devices. 2) A SS saturation around 40 mV/dec is observed between 200 K and 100 K. It is well explained by the electron transport via band tail states with exponential decay (Wt) of 13 meV. 3) At deep-cryogenic temperature, SS increase significantly exceeding 200 mV/dec at 4 K. Such high SS values are actually limited by the measurement current range, confirmed by Id-Vg simulations based on the variable range hopping (VRH) model. This work not only elucidates the SS behavior in amorphous IGZO devices but also provides a deep understanding of the physical mechanisms of electron transport in amorphous semiconductors. △ Less

Submitted 18 June, 2025; originally announced June 2025.

Journal ref: Appl. Phys. Lett. 126, 232108 (2025)

Generalized Boltzmann relations in semiconductors including band tails

Authors: Arnout Beckers, Dominique Beckers, Farzan Jazaeri, Bertrand Parvais, Christian Enz

Abstract: Boltzmann relations are widely used in semiconductor physics to express the charge-carrier densities as a function of the Fermi level and temperature. However, these simple exponential relations only apply to sharp band edges of the conduction and valence bands. In this article, we present a generalization of the Boltzmann relations accounting for exponential band tails. To this end, the required… ▽ More Boltzmann relations are widely used in semiconductor physics to express the charge-carrier densities as a function of the Fermi level and temperature. However, these simple exponential relations only apply to sharp band edges of the conduction and valence bands. In this article, we present a generalization of the Boltzmann relations accounting for exponential band tails. To this end, the required Fermi-Dirac integral is first recast as a Gauss hypergeometric function, followed by a suitable transformation of that special function, and a zeroth-order series expansion using the hypergeometric series. This results in simple relations for the electron and hole densities that each involve two exponentials. One exponential depends on the temperature and the other one on the band-tail parameter. The proposed relations tend to the Boltzmann relations if the band-tail parameters tend to zero. This work comes timely for the modeling of classical semiconductor devices at cryogenic temperatures for large-scale quantum computing. △ Less

Submitted 24 September, 2023; originally announced September 2023.

Journal ref: J. Appl. Phys. 129, 045701 (2021)

Robust Simulation of Poisson's Equation in a P-N Diode Down to 1 μK

Authors: Arnout Beckers

Abstract: Semiconductor devices are notoriously difficult to simulate at deep-cryogenic temperatures. The lowest temperature that can be simulated today in commercial TCAD is around 4.2 K, possibly 100 mK, while most experimental quantum science is performed at 10 mK or lower. Besides the challenges in transport solvers, one of the main bottlenecks is the non-convergence in the electrostatics due to the ext… ▽ More Semiconductor devices are notoriously difficult to simulate at deep-cryogenic temperatures. The lowest temperature that can be simulated today in commercial TCAD is around 4.2 K, possibly 100 mK, while most experimental quantum science is performed at 10 mK or lower. Besides the challenges in transport solvers, one of the main bottlenecks is the non-convergence in the electrostatics due to the extreme sensitivity to small variations in the potential. This article proposes to reformulate Poisson's equation to take out this extreme sensitivity and improve convergence. We solve the reformulated Poisson equation for a p-n diode using an iterative Newton-Raphson scheme, demonstrating convergence for the first time down to a record low temperature of one microkelvin using the standard IEEE-754 arithmetic with double precision. We plot the potential diagrams and resolve the rapid variation of the carrier densities near the edges of the depletion layer. The main Python functions are presented in the Appendix. △ Less

Submitted 6 December, 2022; originally announced December 2022.

Bounded Distribution Functions for Applied Physics, Especially Electron Device Simulation at Deep-Cryogenic Temperatures

Authors: Arnout Beckers

Abstract: Numerical underflow and overflow are major hurdles for rolling-out the modeling and simulation infrastructure for temperatures below about 50 K. Extending the numeric precision is computationally intensive and thus best avoided. The root cause of these numerical challenges lies in the Fermi-Dirac, Bose-Einstein, and Boltzmann distribution functions. To tackle their extreme values, bounded distribu… ▽ More Numerical underflow and overflow are major hurdles for rolling-out the modeling and simulation infrastructure for temperatures below about 50 K. Extending the numeric precision is computationally intensive and thus best avoided. The root cause of these numerical challenges lies in the Fermi-Dirac, Bose-Einstein, and Boltzmann distribution functions. To tackle their extreme values, bounded distribution functions are proposed which are numerically safe in a given precision, yet identical to the standard distributions at the physical level. These functions can help to develop electron device models and TCAD software handling deep-cryogenic temperatures in the default double precision, to keep pace with the rapid experimental progress. More broadly, they can apply to other branches of applied physics with similar numerical challenges as well. △ Less

Submitted 4 December, 2022; originally announced December 2022.

A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics

Authors: Farzan Jazaeri, Arnout Beckers, Armin Tajalli, Jean-Michel Sallese

Abstract: Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose industrial progress is currently way ahead of all other qubit implementations. This paper briefly reviews the progress made on the silicon-based QC platform, which is h… ▽ More Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose industrial progress is currently way ahead of all other qubit implementations. This paper briefly reviews the progress made on the silicon-based QC platform, which is highly promising to meet the scale-up challenges by leveraging the semiconductor industry. We look at different types of qubits, the advantages of silicon, and techniques for qubit manipulation in the solid state. Finally, we discuss the possibility of co-integrating silicon qubits with FET-based, cooled front-end electronics, and review the device physics of MOSFETs at deep cryogenic temperatures. △ Less

Submitted 7 August, 2019; originally announced August 2019.

Cryogenic MOSFET Threshold Voltage Model

Authors: Arnout Beckers, Farzan Jazaeri, Christian Enz

Abstract: This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic carrier-density scaling, and incomplete ionization. We demonstrate that accounting for incomplete ionization in the expression of the threshold voltage is critical for a… ▽ More This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic carrier-density scaling, and incomplete ionization. We demonstrate that accounting for incomplete ionization in the expression of the threshold voltage is critical for an accurate estimation of the current. The model is validated with our experimental results from nMOSFETs of a 28-nm CMOS process. The developed model is a key element for a cryo-CMOS compact model and can serve as a guide to optimize processes for high-performance cryo-computing and ultra-low-power quantum computing. △ Less

Submitted 22 April, 2019; originally announced April 2019.

Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing

Authors: Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi, Louis Hutin, Silvano De Franceschi, Christian Enz

Abstract: In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device physics. We then illustrate how these phenomena can be accounted for in circuit device-models. We find that the design-oriented simplified EKV model… ▽ More In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device physics. We then illustrate how these phenomena can be accounted for in circuit device-models. We find that the design-oriented simplified EKV model can accurately predict the impact of the temperature reduction on the transfer characteristics, back-gate sensitivity, and transconductance efficiency. The presented results aim at extending industry-standard compact models to cryogenic temperatures for the design of cryo- CMOS circuits implemented in a 28 nm FDSOI technology. △ Less

Submitted 16 August, 2018; originally announced August 2018.

Comments: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

Journal ref: IEEE EUROSOI-ULIS (2018) 1-4