Nanoscale resolved mapping of the dipole emission of hBN color centers with a scattering-type scanning near-field optical microscope
Authors:
Iris Niehues,
Daniel Wigger,
Korbinian Kaltenecker,
Annika Klein-Hitpass,
Philippe Roelli,
Aleksandra K. Dąbrowska,
Katarzyna Ludwiczak,
Piotr Tatarczak,
Janne O. Becker,
Robert Schmidt,
Martin Schnell,
Johannes Binder,
Andrzej Wysmołek,
Rainer Hillenbrand
Abstract:
Color centers in hexagonal boron nitride (hBN) are promising candidates as quantum light sources for future technologies. In this work, we utilize a scattering-type near-field optical microscope (s-SNOM) to study the photoluminescence (PL) emission characteristics of such quantum emitters in metalorganic vapor phase epitaxy grown hBN. On the one hand, we demonstrate direct near-field optical excit…
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Color centers in hexagonal boron nitride (hBN) are promising candidates as quantum light sources for future technologies. In this work, we utilize a scattering-type near-field optical microscope (s-SNOM) to study the photoluminescence (PL) emission characteristics of such quantum emitters in metalorganic vapor phase epitaxy grown hBN. On the one hand, we demonstrate direct near-field optical excitation and emission through interaction with the nanofocus of the tip resulting in a sub-diffraction limited tip-enhanced PL hotspot. On the other hand, we show that indirect excitation and emission via scattering from the tip significantly increases the recorded PL intensity. This demonstrates that the tip-assisted PL (TAPL) process efficiently guides the generated light to the detector. We apply the TAPL method to map the in-plane dipole orientations of the hBN color centers on the nanoscale. This work promotes the widely available s-SNOM approach to applications in the quantum domain including characterization and optical control.
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Submitted 25 January, 2025;
originally announced January 2025.
