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Medusa 84 SiH -- A novel high Selectivity Electron Beam Resist for Diamond Quantum Technologies
Authors:
Oliver Roman Opaluch,
Sebastian Westrich,
Nimba Oshnik,
Philipp Fuchs,
Jan Fait,
Sandra Wolff,
Harry Biller,
Mandy Sendel,
Christoph Becher,
Elke Neu
Abstract:
We investigate the novel electron beam resist Medusa 84 SiH by Allresist GmbH (Germany) for nanostructuring of single crystal diamond and its effects on the spin properties of nitrogen vacancy (NV) centers in nanopillars as prototypes for photonic structures. We find contrast curves comparable to those of resists previously used for this task (Hydrogensilsequioxane FOx). We present a minimum selec…
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We investigate the novel electron beam resist Medusa 84 SiH by Allresist GmbH (Germany) for nanostructuring of single crystal diamond and its effects on the spin properties of nitrogen vacancy (NV) centers in nanopillars as prototypes for photonic structures. We find contrast curves comparable to those of resists previously used for this task (Hydrogensilsequioxane FOx). We present a minimum selectivity for diamond etching of 6$\pm$1. Using an adhesion-promoting silicon interlayer enables fabrication yields of up to 98\%. We measure $T_2$ times of up to $\sim$25 $μ$s before and after processing, demonstrating that the manufactured structures are usable for diamond-based quantum sensing.
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Submitted 5 March, 2025;
originally announced March 2025.
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Quantum Teleportation with Telecom Photons from Remote Quantum Emitters
Authors:
Tim Strobel,
Michal Vyvlecka,
Ilenia Neureuther,
Tobias Bauer,
Marlon Schäfer,
Stefan Kazmaier,
Nand Lal Sharma,
Raphael Joos,
Jonas H. Weber,
Cornelius Nawrath,
Weijie Nie,
Ghata Bhayani,
Caspar Hopfmann,
Christoph Becher,
Peter Michler,
Simone Luca Portalupi
Abstract:
The quest for a global quantum internet is based on the realization of a scalable network which requires quantum hardware with exceptional performance. Among them are quantum light sources providing deterministic, high brightness, high-fidelity entangled photons and quantum memories with coherence times in the millisecond range and above. To operate the network on a global scale, the quantum light…
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The quest for a global quantum internet is based on the realization of a scalable network which requires quantum hardware with exceptional performance. Among them are quantum light sources providing deterministic, high brightness, high-fidelity entangled photons and quantum memories with coherence times in the millisecond range and above. To operate the network on a global scale, the quantum light source should emit at telecommunication wavelengths with minimum propagation losses. A cornerstone for the operation of such a quantum network is the demonstration of quantum teleportation. Here we realize full-photonic quantum teleportation employing one of the most promising platforms, i.e. semiconductor quantum dots, which can fulfill all the aforementioned requirements. Two remote quantum dots are used, one as a source of entangled photon pairs and the other as a single-photon source. The frequency mismatch between the triggered sources is erased using two polarization-preserving quantum frequency converters, enabling a Bell state measurement at telecommunication wavelengths. A post-selected teleportation fidelity of up to 0.721(33) is achieved, significantly above the classical limit, demonstrating successful quantum teleportation between light generated by distinct sources. These results mark a major advance for the semiconductor platform as a source of quantum light fulfilling a key requirement for a scalable quantum network. This becomes particularly relevant after the seminal breakthrough of addressing a nuclear spin in semiconductor quantum dots demonstrating long coherence times, thus fulfilling another crucial step towards a scalable quantum network.
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Submitted 19 November, 2024;
originally announced November 2024.
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Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
Authors:
Jonathan Körber,
Jonah Heiler,
Philipp Fuchs,
Philipp Flad,
Erik Hesselmeier,
Pierre Kuna,
Jawad Ul-Hassan,
Wolfgang Knolle,
Christoph Becher,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Solid state quantum emitters are a prime candidate in distributed quantum technologies since they inherently provide a spin-photon interface. An ongoing challenge in the field, however, is the low photon extraction due to the high refractive index of typical host materials. This challenge can be overcome using photonic structures. Here, we report the integration of V2 centers in a cavity-based opt…
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Solid state quantum emitters are a prime candidate in distributed quantum technologies since they inherently provide a spin-photon interface. An ongoing challenge in the field, however, is the low photon extraction due to the high refractive index of typical host materials. This challenge can be overcome using photonic structures. Here, we report the integration of V2 centers in a cavity-based optical antenna. The structure consists of a silver-coated, 135 nm thin 4H-SiC membrane functioning as a planar cavity with a broadband resonance yielding a theoretical photon collection enhancement factor of 34. The planar geometry allows us to identify over 20 single V2 centers at room temperature with a mean (maximum) count rate enhancement factor of 9 (15). Moreover, we observe 10 V2 centers with a mean absorption linewidth below 80MHz at cryogenic temperatures. These results demonstrate a photon collection enhancement that is robust to the lateral emitter position.
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Submitted 1 July, 2024; v1 submitted 12 June, 2024;
originally announced June 2024.
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High fidelity distribution of triggered polarization-entangled telecom photons via a 36km intra-city fiber network
Authors:
Tim Strobel,
Stefan Kazmaier,
Tobias Bauer,
Marlon Schäfer,
Ankita Choudhary,
Nand Lal Sharma,
Raphael Joos,
Cornelius Nawrath,
Jonas H. Weber,
Weijie Nie,
Ghata Bhayani,
Lukas Wagner,
André Bisquerra,
Marc Geitz,
Ralf-Peter Braun,
Caspar Hopfmann,
Simone L. Portalupi,
Christoph Becher,
Peter Michler
Abstract:
Fiber-based distribution of triggered, entangled, single-photon pairs is a key requirement for the future development of terrestrial quantum networks. In this context, semiconductor quantum dots (QDs) are promising candidates for deterministic sources of on-demand polarization-entangled photon pairs. So far, the best QD polarization-entangled-pair sources emit in the near-infrared wavelength regim…
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Fiber-based distribution of triggered, entangled, single-photon pairs is a key requirement for the future development of terrestrial quantum networks. In this context, semiconductor quantum dots (QDs) are promising candidates for deterministic sources of on-demand polarization-entangled photon pairs. So far, the best QD polarization-entangled-pair sources emit in the near-infrared wavelength regime, where the transmission distance in deployed fibers is limited. Here, to be compatible with existing fiber network infrastructures, bi-directional polarization-conserving quantum frequency conversion (QFC) is employed to convert the QD emission from \unit[780]{nm} to telecom wavelengths. We show the preservation of polarization entanglement after QFC (fidelity to Bell state $F_{φ^+, conv}=0.972\pm0.003$) of the biexciton transition. As a step towards real-world applicability, high entanglement fidelities ($F_{φ^+, loop}=0.945\pm0.005$) after the propagation of one photon of the entangled pair along a \unit[35.8]{km} field installed standard single mode fiber link are reported. Furthermore, we successfully demonstrate a second polarization-conversing QFC step back to \unit[780]{nm} preserving entanglement ($F_{φ^+, back}=0.903\pm0.005$). This further prepares the way for interfacing quantum light to various quantum memories.
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Submitted 27 May, 2024; v1 submitted 23 May, 2024;
originally announced May 2024.
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Photoluminescence of Femtosecond Laser-irradiated Silicon Carbide
Authors:
Y. Abdedou,
A. Fuchs,
P. Fuchs,
D. Herrmann,
S. Weber,
M. Schäfer,
J. L'huillier,
C. Becher,
E. Neu
Abstract:
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers), it is an excellent material for optical resonators due to its high refractive index and an outstanding material for mechanical resonators due to its high Q/f product. Moreover, epitaxial grap…
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Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers), it is an excellent material for optical resonators due to its high refractive index and an outstanding material for mechanical resonators due to its high Q/f product. Moreover, epitaxial graphene layers can be grown as ultrathin electrodes and provide the potential to fine-tune color center resonances. These characteristics render SiC an ideal platform for experiments with single color centers towards quantum technologies including coupling color centers towards cooperative effects. A crucial step towards harnessing the full potential of the SiC platform includes technologies to create color centers with defined localization and density, e.g.\ to facilitate their coupling to nano-photonic structures and to observe cooperative effects. Here, silicon vacancy centers (V$_{Si}$) stand out as no impurity atom is needed and high-thermal budget annealing steps can be avoided. We characterize the effect of localized, femtosecond laser irradiation of SiC, investigating surface modifications and photoluminescence including Raman spectroscopy and optical lifetime measurements.
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Submitted 15 April, 2024;
originally announced April 2024.
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Demonstration of quantum network protocols over a 14-km urban fiber link
Authors:
Stephan Kucera,
Christian Haen,
Elena Arenskötter,
Tobias Bauer,
Jonas Meiers,
Marlon Schäfer,
Ross Boland,
Milad Yahyapour,
Maurice Lessing,
Ronald Holzwarth,
Christoph Becher,
Jürgen Eschner
Abstract:
We report on the implementation of quantum entanglement distribution and quantum state teleportation over a 14.4-km urban dark-fiber link, which is partially underground, partially overhead, and patched in several stations. We characterize the link for its use as a quantum channel and realize its active polarization stabilization. Using a type-II cavity-enhanced SPDC photon pair source, a $^{40}$C…
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We report on the implementation of quantum entanglement distribution and quantum state teleportation over a 14.4-km urban dark-fiber link, which is partially underground, partially overhead, and patched in several stations. We characterize the link for its use as a quantum channel and realize its active polarization stabilization. Using a type-II cavity-enhanced SPDC photon pair source, a $^{40}$Ca$^{+}$ single-ion quantum memory, and quantum frequency conversion to the telecom C-band, we demonstrate photon-photon entanglement, ion-photon entanglement, and teleportation of a qubit state from the ion onto a remote telecom photon, all realized over the urban fiber link.
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Submitted 7 April, 2024;
originally announced April 2024.
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Spectral stability of V2 centres in sub-micron 4H-SiC membranes
Authors:
Jonah Heiler,
Jonathan Körber,
Erik Hesselmeier,
Pierre Kuna,
Rainer Stöhr,
Philipp Fuchs,
Misagh Ghezellou,
Jawad Ul-Hassan,
Wolfgang Knolle,
Christoph Becher,
Florian Kaiser,
Jörg Wrachtrup
Abstract:
Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thi…
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Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thin silicon carbide membranes with thicknesses down to $0.25\,\rmμm$. Our membrane fabrication process involves a combination of chemical mechanical polishing, reactive ion etching, and subsequent annealing. This leads to highly reproducible membranes with roughness values of $3-4\,\rmÅ$, as well as negligible surface fluorescence. We find that silicon vacancy centres show close-to lifetime limited optical linewidths with almost no signs of spectral wandering down to membrane thicknesses of $0.7 \,\rmμm$. For silicon vacancy centres in thinner membranes down to $0.25\,\rmμm$, we observe spectral wandering, however, optical linewidths remain below $200\,\rm MHz$, which is compatible with spin-selective excitation schemes. Our work clearly shows that silicon vacancy centres can be integrated into sub-micron silicon carbide membranes, which opens the avenue towards obtaining the necessary improvements in photon extraction efficiency based on nanophotonic structuring.
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Submitted 13 May, 2024; v1 submitted 19 October, 2023;
originally announced October 2023.
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Coherence of a charge stabilised tin-vacancy spin in diamond
Authors:
Johannes Görlitz,
Dennis Herrmann,
Philipp Fuchs,
Takayuki Iwasaki,
Takashi Taniguchi,
Detlef Rogalla,
David Hardeman,
Pierre-Olivier Colard,
Matthew Markham,
Mutsuko Hatano,
Christoph Becher
Abstract:
Quantum information processing (QIP) with solid state spin qubits strongly depends on the efficient initialisation of the qubit's desired charge state. While the negatively charged tin-vacancy ($\text{SnV}^{-}$) centre in diamond has emerged as an excellent platform for realising QIP protocols due to long spin coherence times at liquid helium temperature and lifetime limited optical transitions, i…
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Quantum information processing (QIP) with solid state spin qubits strongly depends on the efficient initialisation of the qubit's desired charge state. While the negatively charged tin-vacancy ($\text{SnV}^{-}$) centre in diamond has emerged as an excellent platform for realising QIP protocols due to long spin coherence times at liquid helium temperature and lifetime limited optical transitions, its usefulness is severely limited by termination of the fluorescence under resonant excitation [1,2,3]. Here, we unveil the underlying charge cycle of group IV-vacancy (G4V) centres and exploit it to demonstrate highly efficient initialisation of the desired negative charge state of single SnV centres while preserving long term stable optical resonances. We furthermore all-optically probe the coherence of the ground state spins by means of coherent population trapping and find a spin dephasing time of 5$μ$s. Additionally, we demonstrate proof-of-principle single shot spin state readout without the necessity of a magnetic field aligned to the symmetry axis of the defect.
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Submitted 27 May, 2022; v1 submitted 11 October, 2021;
originally announced October 2021.
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A cavity-based optical antenna for color centers in diamond
Authors:
Philipp Fuchs,
Thomas Jung,
Michael Kieschnick,
Jan Meijer,
Christoph Becher
Abstract:
An efficient atom-photon-interface is a key requirement for the integration of solid-state emitters such as color centers in diamond into quantum technology applications. Just like other solid state emitters, however, their emission into free space is severely limited due to the high refractive index of the bulk host crystal. In this work, we present a planar optical antenna based on two silver mi…
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An efficient atom-photon-interface is a key requirement for the integration of solid-state emitters such as color centers in diamond into quantum technology applications. Just like other solid state emitters, however, their emission into free space is severely limited due to the high refractive index of the bulk host crystal. In this work, we present a planar optical antenna based on two silver mirrors coated on a thin single crystal diamond membrane, forming a planar Fabry-Pérot cavity that improves the photon extraction from single tin vacancy (SnV) centers as well as their coupling to an excitation laser. Upon numerical optimization of the structure, we find theoretical enhancements in the collectible photon rate by a factor of 60 as compared to the bulk case. As a proof-of-principle demonstration, we fabricate single crystal diamond membranes with sub-$μ$m thickness and create SnV centers by ion implantation. Employing off-resonant excitation, we show a 6-fold enhancement of the collectible photon rate, yielding up to half a million photons per second from a single SnV center. At the same time, we observe a significant reduction of the required excitation power in accordance with theory, demonstrating the functionality of the cavity as an optical antenna. Due to its planar design, the antenna simultaneously provides similar enhancements for a large number of emitters inside the membrane. Furthermore, the monolithic structure provides high mechanical stability and straightforwardly enables operation under cryogenic conditions as required in most spin-photon interface implementations.
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Submitted 21 May, 2021;
originally announced May 2021.
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Characterization of single photon sources for radiometry applications at room temperature
Authors:
Hee-Jin Lim,
Dong-Hoon Lee,
In-ho Bae,
Kwang-Yong Jeong,
Christoph Becher,
Sejeong Kim,
Igor Aharonovich,
Kee Suk Hong
Abstract:
A single photon source with high repeatability and low uncertainties is the key element for few-photon metrology based on photon numbers. While low photon number fluctuations and high repeatability are important figures for qualification as a standard light source, these characteristics are limited in single photon emitters by some malicious phenomena like blinking or internal relaxations to varyi…
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A single photon source with high repeatability and low uncertainties is the key element for few-photon metrology based on photon numbers. While low photon number fluctuations and high repeatability are important figures for qualification as a standard light source, these characteristics are limited in single photon emitters by some malicious phenomena like blinking or internal relaxations to varying degrees in different materials. This study seeks to characterize photon number fluctuations and repeatability for radiometry applications at room temperature. For generality in this study, we collected photon statistics data with various single photon emitters of $g^{(2)}(0) < 1$ at low excitation power and room temperature in three material platforms: silicon vacancy in diamond, defects in GaN, and vacancy in hBN. We found common factors related with the relaxation times of the internal states that indirectly affect photon number stability. We observed a high stability of photon number with defects in GaN due to faster relaxations compared with vacancies in hBN, which on the other hand produced high rates ($> 10^6$) of photons per second. Finally, we demonstrate repeatable radiant flux measurements of a bright hBN single photon emitter for a wide radiant flux range from a few tens of femtowatts to one picowatt.
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Submitted 21 July, 2020;
originally announced July 2020.
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Spin Measurements of NV Centers Coupled to a Photonic Crystal Cavity
Authors:
Thomas Jung,
Johannes Görlitz,
Benjamin Kambs,
Christoph Pauly,
Nicole Raatz,
Richard Nelz,
Elke Neu,
Andrew M. Edmonds,
Matthew Markham,
Frank Mücklich,
Jan Meijer,
Christoph Becher
Abstract:
Nitrogen-vacancy (NV) centers feature outstanding properties like a spin coherence time of up to one second as well as a level structure offering the possibility to initialize, coherently manipulate and optically read-out the spin degree of freedom of the ground state. However, only about three percent of their photon emission are channeled into the zero phonon line (ZPL), limiting both the rate o…
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Nitrogen-vacancy (NV) centers feature outstanding properties like a spin coherence time of up to one second as well as a level structure offering the possibility to initialize, coherently manipulate and optically read-out the spin degree of freedom of the ground state. However, only about three percent of their photon emission are channeled into the zero phonon line (ZPL), limiting both the rate of indistinguishable single photons and the signal-to-noise ratio (SNR) of coherent spin-photon interfaces. We here report on the enhancement of the SNR of the optical spin read-out achieved by tuning the mode of a two-dimensional photonic crystal (PhC)cavity into resonance with the NV-ZPL. PhC cavities are fabricated by focused ion beam (FIB) milling in thin reactive ion (RIE) etched ultrapure single crystal diamond membranes featuring modes with Q-factors of up to 8250 at mode volumes below one cubic wavelength. NV centers are produced in the cavities in a controlled fashion by a high resolution atomic force microscope (AFM) implantation technique. On cavity resonance we observe a lifetime shortening from 9.0ns to 8.0ns as well as an enhancement of the ZPL emission by almost one order of magnitude. Although on resonance the collection efficiency of ZPL photons and the spin-dependent fluorescence contrast are reduced, the SNR of the optical spin read-out is almost tripled for the cavity-coupled NV centers.
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Submitted 17 July, 2019;
originally announced July 2019.
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Towards wafer-scale diamond nano- and quantum technologies
Authors:
Richard Nelz,
Johannes Görlitz,
Dennis Herrmann,
Abdallah Slablab,
Michel Challier,
Mariusz Radtke,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher,
Elke Neu
Abstract:
We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure…
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We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure witnesses high crystalline quality of the diamond especially close to the growth surface, consistent with a reduced dislocation density. Using ion implantation and plasma etching, we verify the possibility to fabricate nanostructures with shallow color centers rendering our diamond material promising for fabrication of nanoscale sensing devices. As this diamond is available in wafer-sizes up to $100 mm$ it offers the opportunity to up-scale diamond-based device fabrication.
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Submitted 22 October, 2018;
originally announced October 2018.
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Infrared laser magnetometry with a NV doped diamond intracavity etalon
Authors:
Yannick Dumeige,
Jean-François Roch,
Fabien Bretenaker,
Thierry Debuisschert,
Victor Acosta,
Christoph Becher,
Georgios Chatzidrosos,
Arne Wickenbrock,
Lykourgos Bougas,
Alexander Wilzewski,
Dmitry Budker
Abstract:
We propose an hybrid laser system consisting of a semiconductor external cavity laser associated to an intra-cavity diamond etalon doped with nitrogen-vacancy color centers. We consider laser emission tuned to the infrared absorption line that is enhanced under the magnetic field dependent nitrogen-vacancy electron spin resonance and show that this architecture leads to a compact solid-state magne…
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We propose an hybrid laser system consisting of a semiconductor external cavity laser associated to an intra-cavity diamond etalon doped with nitrogen-vacancy color centers. We consider laser emission tuned to the infrared absorption line that is enhanced under the magnetic field dependent nitrogen-vacancy electron spin resonance and show that this architecture leads to a compact solid-state magnetometer that can be operated at room-temperature. The sensitivity to the magnetic field limited by the photon shot-noise of the output laser beam is estimated to be around $250~\mathrm{fT/\sqrt{Hz}}$. Unlike usual NV center infrared magnetometry, this method would not require an external frequency stabilized laser. Since the proposed system relies on the competition between the laser threshold and an intracavity absorption, such laser-based optical sensor could be easily adapted to a broad variety of physical systems.
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Submitted 18 October, 2018;
originally announced October 2018.
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Two-photon interference in the telecom C-band after frequency conversion of photons from remote quantum emitters
Authors:
Jonas H. Weber,
Benjamin Kambs,
Jan Kettler,
Simon Kern,
Julian Maisch,
Hüseyin Vural,
Michael Jetter,
Simone L. Portalupi,
Christoph Becher,
Peter Michler
Abstract:
Efficient fiber-based long-distance quantum communication via quantum repeaters relies on deterministic single-photon sources at telecom wavelengths, with the potential to exploit the existing world-wide infrastructures. For upscaling the experimental complexity in quantum networking, two-photon interference (TPI) of remote non-classical emitters in the low-loss telecom bands is of utmost importan…
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Efficient fiber-based long-distance quantum communication via quantum repeaters relies on deterministic single-photon sources at telecom wavelengths, with the potential to exploit the existing world-wide infrastructures. For upscaling the experimental complexity in quantum networking, two-photon interference (TPI) of remote non-classical emitters in the low-loss telecom bands is of utmost importance. With respect to TPI of distinct emitters, several experiments have been conducted, e.g., using trapped atoms [Beugnon2006], ions [Maunz2007], NV-centers [Bernien2012, Sipahigil2012], SiV-centers [Sipahigil2014], organic molecules [Lettow2010] and semiconductor quantum dots (QDs) [Patel2010, Flagg2010, He2013b, Gold2014, Giesz2015, Thoma2017, Reindl2017, Zopf2017]; however, the spectral range was far from the highly desirable telecom C-band. Here, we report on TPI at 1550 nm between down-converted single photons from remote QDs [Michler2017Book], demonstrating quantum frequency conversion [Zaske2012, Ates2012, Kambs2016] as precise and stable mechanism to erase the frequency difference between independent emitters. On resonance, a TPI-visibility of (29+-3)% has been observed, being only limited by spectral diffusion processes of the individual QDs [Robinson2000, Kuhlmann2015]. Up to 2-km of additional fiber channel has been introduced in both or individual signal paths with no influence on TPI-visibility, proving negligible photon wave-packet distortion. The present experiment is conducted within a local fiber network covering several rooms between two floors of the building. Our studies pave the way to establish long-distance entanglement distribution between remote solid-state emitters including interfaces with various quantum hybrid systems [DeGreve2012,Maring2017,Bock2017,Maring2018].
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Submitted 19 March, 2018;
originally announced March 2018.
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Cavity-enhanced single photon source based on the silicon vacancy center in diamond
Authors:
Julia Benedikter,
Hanno Kaupp,
Thomas Hümmer,
Yuejiang Liang,
Alexander Bommer,
Christoph Becher,
Anke Krueger,
Jason M. Smith,
Theodor W. Hänsch,
David Hunger
Abstract:
Single photon sources are an integral part of various quantum technologies, and solid state quantum emitters at room temperature appear as a promising implementation. We couple the fluorescence of individual silicon vacancy centers in nanodiamonds to a tunable optical microcavity to demonstrate a single photon source with high efficiency, increased emission rate, and improved spectral purity compa…
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Single photon sources are an integral part of various quantum technologies, and solid state quantum emitters at room temperature appear as a promising implementation. We couple the fluorescence of individual silicon vacancy centers in nanodiamonds to a tunable optical microcavity to demonstrate a single photon source with high efficiency, increased emission rate, and improved spectral purity compared to the intrinsic emitter properties. We use a fiber-based microcavity with a mode volume as small as $3.4~λ^3$ and a quality factor of $1.9\times 10^4$ and observe an effective Purcell factor of up to 9.2. We furthermore study modifications of the internal rate dynamics and propose a rate model that closely agrees with the measurements. We observe lifetime changes of up to 31%, limited by the finite quantum efficiency of the emitters studied here. With improved materials, our achieved parameters predict single photon rates beyond 1 GHz.
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Submitted 3 March, 2017; v1 submitted 16 December, 2016;
originally announced December 2016.
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Highly Sensitive On-Chip Magnetometer with Saturable Absorbers in Two-Color Microcavities
Authors:
O. Gazzano,
C. Becher
Abstract:
Interacting resonators can lead to strong non-linearities but the details can be complicated to predict. In this work, we study the non-linearities introduced by two nested microcavities that interact with nitrogen vacancy centers in a diamond waveguide. Each cavity has differently designed resonance; one in the green and one in the infrared. The magnetic-field dependence of the nitrogen vacancy c…
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Interacting resonators can lead to strong non-linearities but the details can be complicated to predict. In this work, we study the non-linearities introduced by two nested microcavities that interact with nitrogen vacancy centers in a diamond waveguide. Each cavity has differently designed resonance; one in the green and one in the infrared. The magnetic-field dependence of the nitrogen vacancy center absorption rates on the green and the recently observed infrared transitions allows us to propose a scalable on-chip magnetometer that combines high magnetic-field sensitivity and micrometer spatial resolution. By investigating the system behaviors over several intrinsic and extrinsic parameters, we explain the main non-linearities induced by the NV centers and enhanced by the cavities. We finally show that the cavities can improve the magnetic-field sensitivity by up to two orders of magnitudes.
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Submitted 14 March, 2016;
originally announced March 2016.
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Site selective growth of heteroepitaxial diamond nanoislands containing single SiV centers
Authors:
Carsten Arend,
Patrick Appel,
Jonas Nils Becker,
Marcel Schmidt,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher,
Patrick Maletinsky,
Elke Neu
Abstract:
We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned ar…
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We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned areas evolve into regular arrays of (001) oriented diamond nano-islands with diameters of <500nm and a height of approx. 60 nm. In the islands, we identify single SiV color centers with narrow zero phonon lines down to 1 nm at room temperature.
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Submitted 9 February, 2016; v1 submitted 11 November, 2015;
originally announced November 2015.
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Nanoimplantation and Purcell enhancement of single NV centers in photonic crystal cavities in diamond
Authors:
Janine Riedrich-Möller,
Sébastien Pezzagna,
Jan Meijer,
Christoph Pauly,
Frank Mücklich,
Matthew Markham,
Andrew M. Edmonds,
Christoph Becher
Abstract:
We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane. High-resolution placement of NV centers is achieved using collimation of a 5keV-nitrogen ion beam through a pierced tip of an atomic force microscope (AFM). We demonstrate coupling of the imp…
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We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane. High-resolution placement of NV centers is achieved using collimation of a 5keV-nitrogen ion beam through a pierced tip of an atomic force microscope (AFM). We demonstrate coupling of the implanted NV centers' broad band fluorescence to a cavity mode and observe Purcell enhancement of the spontaneous emission. The results are in good agreement with a master equation model for the cavity coupling.
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Submitted 19 March, 2015;
originally announced March 2015.
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Deterministic coupling of a single silicon-vacancy color center to a photonic crystal cavity in diamond
Authors:
Janine Riedrich-Möller,
Carsten Arend,
Christoph Pauly,
Frank Mücklich,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher
Abstract:
Deterministic coupling of single solid-state emitters to nanocavities is the key for integrated quantum information devices. We here fabricate a photonic crystal cavity around a preselected single silicon-vacancy color center in diamond and demonstrate modification of the emitters internal population dynamics and radiative quantum efficiency. The controlled, room-temperature cavity coupling gives…
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Deterministic coupling of single solid-state emitters to nanocavities is the key for integrated quantum information devices. We here fabricate a photonic crystal cavity around a preselected single silicon-vacancy color center in diamond and demonstrate modification of the emitters internal population dynamics and radiative quantum efficiency. The controlled, room-temperature cavity coupling gives rise to a resonant Purcell enhancement of the zero-phonon transition by a factor of 19, coming along with a 2.5-fold reduction of the emitter's lifetime.
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Submitted 8 August, 2014;
originally announced August 2014.
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Narrow-band single photon emission at room temperature based on a single Nitrogen-vacancy center coupled to an all-fiber-cavity
Authors:
Roland Albrecht,
Alexander Bommer,
Christoph Pauly,
Frank Mücklich,
Andreas W. Schell,
Philip Engel,
Tim Schröder,
Oliver Benson,
Jakob Reichel,
Christoph Becher
Abstract:
We report the realization of a device based on a single Nitrogen-vacancy (NV) center in diamond coupled to a fiber-cavity for use as single photon source (SPS). The device consists of two concave mirrors each directly fabricated on the facets of two optical fibers and a preselected nanodiamond containing a single NV center deposited onto one of these mirrors. Both, cavity in- and output are direct…
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We report the realization of a device based on a single Nitrogen-vacancy (NV) center in diamond coupled to a fiber-cavity for use as single photon source (SPS). The device consists of two concave mirrors each directly fabricated on the facets of two optical fibers and a preselected nanodiamond containing a single NV center deposited onto one of these mirrors. Both, cavity in- and output are directly fiber-coupled and the emission wavelength is easily tunable by variation of the separation of the two mirrors with a piezo-electric crystal. By coupling to the cavity we achieve an increase of the spectral photon rate density by two orders of magnitude compared to free-space emission of the NV center. With this work we establish a simple all-fiber based SPS with promising prospects for the integration into photonic quantum networks.
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Submitted 22 July, 2014;
originally announced July 2014.
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Coupling of a single NV-center in diamond to a fiber-based microcavity
Authors:
Roland Albrecht,
Alexander Bommer,
Christian Deutsch,
Jakob Reichel,
Christoph Becher
Abstract:
We report on the coupling of a single Nitrogen-vacancy (NV) center in a nanodiamond to a fiber-based microcavity at room temperature. Investigating the very same NV center inside the cavity and in free-space allows to systematically explore a new regime of phonon-assisted cavity feeding. Making use of the NV center's strongly broadened emission, we realize a widely tunable, narrowband single photo…
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We report on the coupling of a single Nitrogen-vacancy (NV) center in a nanodiamond to a fiber-based microcavity at room temperature. Investigating the very same NV center inside the cavity and in free-space allows to systematically explore a new regime of phonon-assisted cavity feeding. Making use of the NV center's strongly broadened emission, we realize a widely tunable, narrowband single photon source. A master equation model well reproduces our experimental results and predicts a transition into a Purcell-enhanced emission regime at low temperatures.
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Submitted 13 June, 2013; v1 submitted 29 March, 2013;
originally announced March 2013.
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Photophysics of single silicon vacancy centers in diamond: implications for single photon emission
Authors:
Elke Neu,
Mario Agio,
Christoph Becher
Abstract:
Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics of single SiV centers in diamond nanocrystals on iridium surfaces including an intensity dependent de-shelving process. Furthermore, we investigate the brightne…
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Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics of single SiV centers in diamond nanocrystals on iridium surfaces including an intensity dependent de-shelving process. Furthermore, we investigate the brightness and photostability of single centers and find maximum single photon rates of 6.2 Mcps under continuous excitation. We investigate the collection efficiency of the fluorescence and estimate quantum efficiencies of the SiV centers.
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Submitted 9 August, 2012; v1 submitted 3 July, 2012;
originally announced July 2012.
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Visible-to-telecom quantum frequency conversion of light from a single quantum emitter
Authors:
Sebastian Zaske,
Andreas Lenhard,
Christian A. Kessler,
Jan Kettler,
Christian Hepp,
Carsten Arend,
Roland Albrecht,
Wolfgang-Michael Schulz,
Michael Jetter,
Peter Michler,
Christoph Becher
Abstract:
Quantum frequency conversion (QFC), a nonlinear optical process in which the frequency of a quantum light field is altered while conserving its non-classical correlations, was first demonstrated 20 years ago. Meanwhile, it is considered an essential tool for the implementation of quantum repeaters since it allows for interfacing quantum memories with telecom-wavelength photons as quantum informati…
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Quantum frequency conversion (QFC), a nonlinear optical process in which the frequency of a quantum light field is altered while conserving its non-classical correlations, was first demonstrated 20 years ago. Meanwhile, it is considered an essential tool for the implementation of quantum repeaters since it allows for interfacing quantum memories with telecom-wavelength photons as quantum information carriers. Here we demonstrate efficient (>30%) QFC of visible single photons (711 nm) emitted by a quantum dot (QD) to a telecom wavelength (1,313 nm). Analysis of the first and second-order coherence before and after wavelength conversion clearly proves that important properties, such as the coherence time and photon antibunching, are fully conserved during the frequency translation process. Our findings underline the great potential of single photon sources on demand in combination with QFC as a promising technique for quantum repeater schemes.
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Submitted 27 April, 2012;
originally announced April 2012.
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One- and two-dimensional photonic crystal micro-cavities in single crystal diamond
Authors:
Janine Riedrich-Möller,
Laura Kipfstuhl,
Christian Hepp,
Elke Neu,
Christoph Pauly,
Frank Mücklich,
Armin Baur,
Michael Wandt,
Sandra Wolff,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher
Abstract:
The development of solid-state photonic quantum technologies is of great interest for fundamental studies of light-matter interactions and quantum information science. Diamond has turned out to be an attractive material for integrated quantum information processing due to the extraordinary properties of its colour centres enabling e.g. bright single photon emission and spin quantum bits. To contro…
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The development of solid-state photonic quantum technologies is of great interest for fundamental studies of light-matter interactions and quantum information science. Diamond has turned out to be an attractive material for integrated quantum information processing due to the extraordinary properties of its colour centres enabling e.g. bright single photon emission and spin quantum bits. To control emitted photons and to interconnect distant quantum bits, micro-cavities directly fabricated in the diamond material are desired. However, the production of photonic devices in high-quality diamond has been a challenge so far. Here we present a method to fabricate one- and two-dimensional photonic crystal micro-cavities in single-crystal diamond, yielding quality factors up to 700. Using a post-processing etching technique, we tune the cavity modes into resonance with the zero phonon line of an ensemble of silicon-vacancy centres and measure an intensity enhancement by a factor of 2.8. The controlled coupling to small mode volume photonic crystal cavities paves the way to larger scale photonic quantum devices based on single-crystal diamond.
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Submitted 21 September, 2011;
originally announced September 2011.
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Design of microcavities in diamond-based photonic crystals by Fourier- and real-space analysis of cavity fields
Authors:
Janine Riedrich-Möller,
Elke Neu,
Christoph Becher
Abstract:
We present the design of two-dimensional photonic crystal microcavities in thin diamond membranes well suited for coupling of color centers in diamond. By comparing simulated and ideal field distributions in Fourier and real space and by according modification of air hole positions and size, we optimize the cavity structure yielding high quality factors up to Q = 320000 with a modal volume of V…
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We present the design of two-dimensional photonic crystal microcavities in thin diamond membranes well suited for coupling of color centers in diamond. By comparing simulated and ideal field distributions in Fourier and real space and by according modification of air hole positions and size, we optimize the cavity structure yielding high quality factors up to Q = 320000 with a modal volume of V = 0.35 (lambda/n)^3. Using the very same approach we also improve previous designs of a small modal volume microcavity in silicon, gaining a factor of 3 in cavity Q. In view of practical realization of photonic crystals in synthetic diamond films, it is necessary to investigate the influence of material absorption on the quality factor. We show that this influence can be predicted by a simple model, replacing time consuming simulations.
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Submitted 4 January, 2010;
originally announced January 2010.
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New experimental and theoretical approach to the 3d D-level lifetimes of 40Ca+
Authors:
A. Kreuter,
C. Becher,
G. P. T. Lancaster,
A. B. Mundt,
C. Russo,
H. Häffner,
C. Roos,
W. Hänsel,
F. Schmidt-Kaler,
R. Blatt,
M. S. Safronova
Abstract:
We report measurements of the lifetimes of the 3d $^2$D$_{5/2}$ and 3d $^2$D$_{3/2}$ metastable states of a single laser-cooled $^{40}$Ca$^+$ ion in a linear Paul trap. We introduce a new measurement technique based on high-efficiency quantum state detection after coherent excitation to the D$_{5/2}$ state or incoherent shelving in the D$_{3/2}$ state, and subsequent free, unperturbed spontaneou…
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We report measurements of the lifetimes of the 3d $^2$D$_{5/2}$ and 3d $^2$D$_{3/2}$ metastable states of a single laser-cooled $^{40}$Ca$^+$ ion in a linear Paul trap. We introduce a new measurement technique based on high-efficiency quantum state detection after coherent excitation to the D$_{5/2}$ state or incoherent shelving in the D$_{3/2}$ state, and subsequent free, unperturbed spontaneous decay. The result for the natural lifetime of the D$_{5/2}$ state of 1168(9) ms agrees excellently with the most precise published value. The lifetime of the D$_{3/2}$ state is measured with a single ion for the first time and yields 1176(11) ms which improves the statistical uncertainty of previous results by a factor of four. We compare these experimental lifetimes to high-precision ab initio all order calculations and find a very good agreement. These calculations represent an excellent test of high-precision atomic theory and will serve as a benchmark for the study of parity nonconservation in Ba$^+$ which has similar atomic structure.
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Submitted 7 September, 2004;
originally announced September 2004.
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Precision measurement and compensation of optical Stark shifts for an ion-trap quantum processor
Authors:
H. Haeffner,
S. Gulde,
M. Riebe,
G. Lancaster,
C. Becher,
J. Eschner,
F. Schmidt-Kaler,
R. Blatt
Abstract:
Using optical Ramsey interferometry, we precisely measure the laser-induced AC-stark shift on the $S_{1/2}$ -- $D_{5/2}$ "quantum bit" transition near 729 nm in a single trapped $^{40}$Ca$^+$ ion. We cancel this shift using an additional laser field. This technique is of particular importance for the implementation of quantum information processing with cold trapped ions. As a simple application…
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Using optical Ramsey interferometry, we precisely measure the laser-induced AC-stark shift on the $S_{1/2}$ -- $D_{5/2}$ "quantum bit" transition near 729 nm in a single trapped $^{40}$Ca$^+$ ion. We cancel this shift using an additional laser field. This technique is of particular importance for the implementation of quantum information processing with cold trapped ions. As a simple application we measure the atomic phase evolution during a $n \times 2π$ rotation of the quantum bit.
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Submitted 9 December, 2002;
originally announced December 2002.
