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Inverse Design of Broadband Antennas for Terahertz Devices Based on 2D Materials
Authors:
M. Lukianov,
A. Maevskiy,
N. Kazeev,
D. Mylnikov,
K. S. Novoselov,
D. A. Svintsov,
A. Ustyuzhanin,
D. A. Bandurin
Abstract:
Terahertz (THz) technology, a cornerstone of next-generation high-speed communication and sensing, has long been hindered by impedance mismatch challenges that limit device performance and applicability. These challenges become particularly pronounced when ultrasensitive two-dimensional (2D) materials are employed as the device substrate in the THz range, further complicating their integration int…
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Terahertz (THz) technology, a cornerstone of next-generation high-speed communication and sensing, has long been hindered by impedance mismatch challenges that limit device performance and applicability. These challenges become particularly pronounced when ultrasensitive two-dimensional (2D) materials are employed as the device substrate in the THz range, further complicating their integration into real-world applications. Furthermore, conventional antenna designs often fail to provide adequate matching across the extensive THz spectrum. In this work, we tackle these challenges using a procedural generation algorithm to design THz broadband antennas that satisfy specific performance criteria. Namely, the developed inverse design methodology enables customization for the target impedance value, bandwidth, and contact topology requirements. The proposed antenna achieves an improvement of up to 40\% in power transfer efficiency compared to traditional bow-tie antennas under realistic operating conditions. High-fidelity electromagnetic simulations validate these results, confirming the design's practicality for THz applications. This work addresses critical limitations of existing antenna designs and advances the feasibility of high-frequency applications in both communication and sensing.
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Submitted 9 May, 2025;
originally announced May 2025.
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MoSi$_2$N$_4$-like crystals -- the new family of two-dimensional materials
Authors:
Tatiana Latychevskaia,
Denis A. Bandurin,
Kostya S. Novoselov
Abstract:
Recently-synthesised MoSi$_2$N$_4$ is the first septuple layer two-dimensional material, which doesn't naturally occurs as a layered crystal, and has been obtained with CVD growth. It can be considered as MoN$_2$ crystal (with a crystal structure of MoS2) intercalating Si2N2 two-dimensional layer (with the structure similar to InSe). Such classification gave rise to the understanding of the electr…
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Recently-synthesised MoSi$_2$N$_4$ is the first septuple layer two-dimensional material, which doesn't naturally occurs as a layered crystal, and has been obtained with CVD growth. It can be considered as MoN$_2$ crystal (with a crystal structure of MoS2) intercalating Si2N2 two-dimensional layer (with the structure similar to InSe). Such classification gave rise to the understanding of the electronic properties of the material, but also to the prediction of other members of the family (many dozens of them) as well as to the way to classify those. Whereas the originally-synthesised MoSi$_2$N$_4$ is a semiconductor, some of the members of the family are also metallic and some even demonstrate magnetic properties. Interestingly, the room-temperature mobility predicted for such crystals can be as high few thousands cm$^2$/V*s (hole mobility typically higher than electron) with some record cases as high as $5\times 10^4$ cm$^2$/V*s, making these materials strong contenders for future electronic applications. The major interest towards these materials is coming from the septuple layer structure, which allows multiple crystal phases, but also complex compositions, in particular those with broken mirror-reflection symmetry against the layer of metal atoms.
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Submitted 9 January, 2025;
originally announced January 2025.
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Hysteresis-controlled Van der Waals tunneling infrared detector enabled by selective layer heating
Authors:
Dmitry A. Mylnikov,
Mikhail A. Kashchenko,
Ilya V. Safonov,
Kostya S. Novoselov,
Denis A. Bandurin,
Alexander I. Chernov,
Dmitry A. Svintsov
Abstract:
Mid-infrared (mid-IR) photodetectors play a crucial role in various applications, including the development of biomimetic vision systems that emulate neuronal function. However, current mid-IR photodetector technologies are limited by their cost and efficiency. In this work, we demonstrate a new type of photodetector based on a tunnel structure made of two-dimensional materials. The effect manifes…
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Mid-infrared (mid-IR) photodetectors play a crucial role in various applications, including the development of biomimetic vision systems that emulate neuronal function. However, current mid-IR photodetector technologies are limited by their cost and efficiency. In this work, we demonstrate a new type of photodetector based on a tunnel structure made of two-dimensional materials. The effect manifests when the upper and lower layers of the tunnel structure are heated differently. The photoswitching is threshold-based and represents a ``jump'' in voltage to another branch of the current-voltage characteristic when illuminated at a given current. This mechanism provides enormous photovoltage (0.05$-$1~V) even under weak illumination. Our photodetector has built-in nonlinearity and is therefore an ideal candidate for use in infrared vision neurons. Additionally, using this structure, we demonstrated the possibility of selective heating of layers in a van der Waals stack using mid-IR illumination. This method will allow the study of heat transfer processes between layers of van der Waals structures, opening new avenues in the physics of phonon interactions.
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Submitted 8 December, 2024;
originally announced December 2024.
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Testing the tomographic Fermi liquid hypothesis with high-order cyclotron resonance
Authors:
Ilia Moiseenko,
Erwin Mönch,
Kirill Kapralov,
Denis Bandurin,
Sergey Ganichev,
Dmitry Svintsov
Abstract:
Recent theoretical studies of carrier-carrier scattering in degenerate two-dimensional systems have revealed radically different relaxation times for odd and even angular harmonics of distribution function. This theoretical concept, dubbed as 'tomographic Fermi liquid', is yet challenging to test with dc electrical measurements as electron scattering weakly affects the electrical resistivity. Here…
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Recent theoretical studies of carrier-carrier scattering in degenerate two-dimensional systems have revealed radically different relaxation times for odd and even angular harmonics of distribution function. This theoretical concept, dubbed as 'tomographic Fermi liquid', is yet challenging to test with dc electrical measurements as electron scattering weakly affects the electrical resistivity. Here, we show that linewidth and amplitude of electromagnetic absorption at the multiple harmonics of the cyclotron resonance carries all necessary information to test the tomographic Fermi liquid hypothesis. Namely, the height and inverse width of $m$-th order cyclotron resonance ($m \ge 2$) is proportional to the lifetime of $m$-th angular harmonic of electron distribution function $τ_m$, if probed at wavelengths exceeding the cyclotron radius $R_c$. Measurements of high-order cyclotron resonance at short wavelengths order of $R_c$ also enable a direct determination of all lifetimes $τ_m$ from a simple linear system of equations that we hereby derive. Extraction of cyclotron resonance lifetimes from an experiment on terahertz photoconductivity in graphene shows that third-order resonance is systematically narrower than second-order one, supporting the prediction of tomographic Fermi liquid hypothesis.
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Submitted 19 October, 2024; v1 submitted 8 September, 2024;
originally announced September 2024.
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Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions
Authors:
Dmitry Mylnikov,
Elena I. Titova,
Mikhail A. Kashchenko,
Ilya V. Safonov,
Sergey S. Zhukov,
Valentin A. Semkin,
Kostya S. Novoselov,
Denis A. Bandurin,
Dmitry A. Svintsov
Abstract:
Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gappe…
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Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gapped bilayer graphene with electrically-induced p-n junctions. We find a strong positive contribution from junctions to resistance, temperature resistance coefficient and photo-resistivity at cryogenic temperatures T ~ 20 K. The contribution to these quantities from junctions exceeds strongly the bulk values at uniform channel doping even at small band gaps ~ 10 meV. We further show that positive junction photoresistance is a hallmark of interband tunneling, and not of intra-band thermionic conduction. Our results point to the possibility of creating various interband tunneling devices based on bilayer graphene, including steep-switching transistors and selective sensors.
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Submitted 8 December, 2022;
originally announced December 2022.
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Edge diffraction and plasmon launching in two-dimensional electron systems
Authors:
Egor Nikulin,
Denis Bandurin,
Dmitry Svintsov
Abstract:
Diffraction of light at lateral inhomogenities is a central process in the near-field studies of nanoscale phenomena, especially the propagation of surface waves. Theoretical description of this process is extremely challenging due to breakdown of plane-wave methods. Here, we present and analyze an exact solution for electromagnetic wave diffraction at the linear junction between two-dimensional e…
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Diffraction of light at lateral inhomogenities is a central process in the near-field studies of nanoscale phenomena, especially the propagation of surface waves. Theoretical description of this process is extremely challenging due to breakdown of plane-wave methods. Here, we present and analyze an exact solution for electromagnetic wave diffraction at the linear junction between two-dimensional electron systems (2DES) with dissimilar surface conductivities. The field at the junction is a combination of three components with different spatial structure: free-field component, non-resonant edge component, and surface plasmon-polariton (SPP). We find closed-form expressions for efficiency of photon-to-plasmon conversion by the edge being the ratio of electric fields in SPP and incident wave. Particularly, the conversion efficiency can considerably exceed unity for the contact between metal and 2DES with large impedance. Our findings can be considered as a first step toward quantitative near-field microscopy of inhomogeneous systems and polaritonic interferometry.
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Submitted 9 June, 2020;
originally announced June 2020.
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Radiation hardness qualification of PbWO4 scintillation crystals for the CMS Electromagnetic Calorimeter
Authors:
The CMS Electromagnetic Calorimeter Group,
P. Adzic,
N. Almeida,
D. Andelin,
I. Anicin,
Z. Antunovic,
R. Arcidiacono,
M. W. Arenton,
E. Auffray,
S. Argiro,
A. Askew,
S. Baccaro,
S. Baffioni,
M. Balazs,
D. Bandurin,
D. Barney,
L. M. Barone,
A. Bartoloni,
C. Baty,
S. Beauceron,
K. W. Bell,
C. Bernet,
M. Besancon,
B. Betev,
R. Beuselinck
, et al. (245 additional authors not shown)
Abstract:
Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews t…
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Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews the related scientific and technological problems encountered.
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Submitted 21 December, 2009;
originally announced December 2009.
