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Topological Quenching of Noise in a Free-Running Moebius Microcomb
Authors:
Debayan Das,
Antonio Cutrona,
Andrew C. Cooper,
Luana Olivieri,
Alexander G. Balanov,
Sai Tak Chu,
Brent E. Little,
Roberto Morandotti,
David J. Moss,
Juan Sebastian Totero Gongora,
Marco Peccianti,
Gian-Luca Oppo,
Alessia Pasquazi
Abstract:
Microcombs require ultralow-noise repetition rates to enable next-generation applications in metrology, high-speed communications, microwave photonics, and sensing. Regardless of the stabilisation method, spectral purity ultimately depends on the quality of the free-running spectrum. Traditionally, sources operate at 'quiet points' in parameter space, fixed by device and material properties. Creat…
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Microcombs require ultralow-noise repetition rates to enable next-generation applications in metrology, high-speed communications, microwave photonics, and sensing. Regardless of the stabilisation method, spectral purity ultimately depends on the quality of the free-running spectrum. Traditionally, sources operate at 'quiet points' in parameter space, fixed by device and material properties. Creating broad, tuneable low-noise regions-especially in self-locked systems-remains an open challenge. Here, inspired by topological protection, we demonstrate a microcomb with intrinsically low phase noise in a fully free-running configuration, operating without external referencing or control. Using a microresonator-filtered laser, we implement a Moebius geometry via interleaved microcavity modes. Upon formation of a topological Moebius soliton molecule, the free-running laser exhibits over 15 dB of phase noise suppression across 10 Hz to 10 kHz at a 100 GHz repetition rate, yielding -63 dBc/Hz phase noise at 1 kHz and an Allan deviation of 4 x 10^-10 at 10 s gate time, without any external control. The state persists across dynamical regimes, including an Ising-Bloch-like transition, a hallmark of non-equilibrium physics, where the soliton molecule shifts from a resting to a moving state. Parametrisation of the group velocity minimises the repetition rate's sensitivity to global system parameters, enabling long-term drift compensation from within the system dynamics. Our results establish a new route to intrinsically noise-quenched microcombs, operating in a standalone, fully free-running configuration governed entirely by internal physical principles. This benefits applications such as chip-based microwave generation, metrology-grade optical clocks, and field-deployable systems, where built-in long-term stability and low-noise performance are critical.
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Submitted 24 May, 2025;
originally announced May 2025.
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Stochastic Instabilities of the Diffusive Memristor
Authors:
Amir Akther,
Debi Pattnaik,
Yury Ushakov,
Pavel Borisov,
Sergey Savel'ev,
Alexander G. Balanov
Abstract:
Recently created diffusive memristors have garnered significant research interest owing to their distinctive capability to generate a diverse array of spike dynamics which are similar in nature to those found in biological cells. This gives the memristor an opportunity to be used in a wide range of applications, specifically within neuromorphic systems. The diffusive memristor is known to produce…
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Recently created diffusive memristors have garnered significant research interest owing to their distinctive capability to generate a diverse array of spike dynamics which are similar in nature to those found in biological cells. This gives the memristor an opportunity to be used in a wide range of applications, specifically within neuromorphic systems. The diffusive memristor is known to produce regular, chaotic and stochastic behaviors which leads to interesting phenomena resulting from the interactions between the behavioral properties. The interactions along with the instabilities that lead to the unique spiking phenomena are not fully understood due to the complexities associated with examining the stochastic properties within the diffusive memristor. In this work, we analyze both the classical and the noise induced bifurcations that a set of stochastic differential equations, justified through a Fokker-Planck equation used to model the diffusive memristor, can produce. Finally, we replicate the results of the numerical stochastic threshold phenomena with experimentally measured spiking.
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Submitted 25 July, 2024;
originally announced July 2024.
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Temperature control of diffusive memristor hysteresis and artificial neuron spiking
Authors:
D. P Pattnaik,
Y. Ushakov,
Z. Zhou,
P. Borisov,
M. D Cropper,
U. W. Wijayantha,
A. G. Balanov,
S. E Savel'ev
Abstract:
Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and disappearance of conduction pillars between device terminals due to the drift and diffusion of Ag nanoparticles in the dielectric matrix. This process is governed by the…
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Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and disappearance of conduction pillars between device terminals due to the drift and diffusion of Ag nanoparticles in the dielectric matrix. This process is governed by the application of the voltage to the device contacts. Here, both in experiment and in theory we demonstrate that varying temperature offers an efficient control of memristor states and charges transport in the device. We found out that by raising and lowering the device temperature, one can reset the memristor state as well as change the residual time the memristor stays in high and low resistive states when the current spiking is generated in the memristive circuit at a constant applied voltage. Our theoretical model demonstrates a good qualitative agreement with the experiments and helps to explain the effects reported.
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Submitted 11 February, 2022;
originally announced February 2022.
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Ultrafast strain-induced charge transport in semiconductor superlattices
Authors:
F. Wang,
C. L. Poyser,
M. T. Greenaway,
A. V. Akimov,
R. P. Campion,
A. J. Kent,
T. M. Fromhold,
A. G. Balanov
Abstract:
We investigate the effect of hypersonic (> 1 GHz) acoustic phonon wavepackets on electron transport in a semiconductor superlattice. Our quantum mechanical simulations demonstrate that a GHz train of picosecond deformation strain pulses propagating through a superlattice can generate current oscillations whose frequency is several times higher than that of the strain pulse train. The shape and pol…
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We investigate the effect of hypersonic (> 1 GHz) acoustic phonon wavepackets on electron transport in a semiconductor superlattice. Our quantum mechanical simulations demonstrate that a GHz train of picosecond deformation strain pulses propagating through a superlattice can generate current oscillations whose frequency is several times higher than that of the strain pulse train. The shape and polarity of the calculated current pulses agree well with experimentally measured electric signals. The calculations also explain and accurately reproduce the measured variation of the induced current pulse magnitude with the strain pulse amplitude and applied bias voltage. Our results open a route to developing acoustically-driven semiconductor superlattices as sources of millimetre and sub-millimetre electromagnetic waves.
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Submitted 26 March, 2020;
originally announced March 2020.
