-
Analysis and Modeling of an 11.8 GHz Fin Resonant Body Transistor in a 14nm FinFET CMOS Process
Authors:
Udit Rawat,
Bichoy Bahr,
Dana Weinstein
Abstract:
In this work, a compact model is presented for a 14 nm CMOS-based FinFET Resonant Body Transistor (fRBT) operating at a frequency of 11.8 GHz and targeting RF frequency generation/filtering for next generation radio communication, clocking, and sensing applications. Analysis of the phononic dispersion characteristics of the device, which informs the model development, shows the presence of polariz…
▽ More
In this work, a compact model is presented for a 14 nm CMOS-based FinFET Resonant Body Transistor (fRBT) operating at a frequency of 11.8 GHz and targeting RF frequency generation/filtering for next generation radio communication, clocking, and sensing applications. Analysis of the phononic dispersion characteristics of the device, which informs the model development, shows the presence of polarization exchange due to the periodic nature of the back-end-of-line (BEOL) metal PnC. An eigenfrequency-based extraction process, applicable to resonators based on electrostatic force transduction, has been used to model the resonance cavity. Augmented forms of the BSIM-CMG (Common Multi-Gate) model for FinFETs are used to model the drive and sense transistors in the fRBT. This model framework allows easy integration with the foundry-supplied process design kits (PDKs) and circuit simulators while being flexible towards change in transduction mechanisms and device architecture. Ultimately, the behaviour is validated against RF measured data for the fabricated fRBT device under different operating conditions, leading to the demonstration of the first complete model for this class of resonant device integrated seamlessly in the CMOS stack.
△ Less
Submitted 9 July, 2021;
originally announced July 2021.
-
X-Band Fin Resonant Body Transistors in 14nm CMOS Technology
Authors:
Jackson Anderson,
Yanbo He,
Bichoy Bahr,
Dana Weinstein
Abstract:
Here we present the first demonstration and in-depth study of unreleased acoustic resonators in 14nm FinFET technology in the IEEE X band, which offer a zero-barrier-to-entry solution for high Q, small footprint, resonant tanks integrated seamlessly in advanced CMOS nodes. These devices leverage phononic waveguides for acoustic confinement, and exploit MOS capacitors and transistors inherent to th…
▽ More
Here we present the first demonstration and in-depth study of unreleased acoustic resonators in 14nm FinFET technology in the IEEE X band, which offer a zero-barrier-to-entry solution for high Q, small footprint, resonant tanks integrated seamlessly in advanced CMOS nodes. These devices leverage phononic waveguides for acoustic confinement, and exploit MOS capacitors and transistors inherent to the technology to electromechanically drive and sense acoustic vibrations. Sixteen device variations are analyzed across thirty bias points to discern the impact of phononic confinement, gate length, and termination scheme on resonator properties. The limiting factor in FinFET resonator performance among design variations tested is shown to be Back End of Line (BEOL) confinement, with devices with acoustic waveguides incorporating Mx and Cx metal layers exhibiting 2.2x higher average quality factor (Q) and peak amplitude, with maximum Q increasing from 115 to 181 and maximum amplitude scaling from 0.8 to 4.5 uS. A detailed analysis of biasing in the highest performing device shows good fit with a derived model, which addresses the velocity saturated piezoresistive effect for the first time in active resonant transistors. Peak differential transconductance that is dominated by changes in the silicon band-structure, as expected from an analysis that includes contributions from the piezoresistive effect, electrostatic modulation, and silicon bandgap modulation.
△ Less
Submitted 1 July, 2021;
originally announced July 2021.
-
Enabling High-Power, Broadband THz Generation with 800-nm Pump Wavelength
Authors:
Zachary B. Zaccardi,
Isaac C. Tangen,
Gabriel A. Valdivia-Berroeta,
Charles B. Bahr,
Karissa C. Kenney,
Claire Rader,
Matthew J. Lutz,
Brittan P. Hunter,
David J. Michaelis,
Jeremy A. Johnson
Abstract:
The organic terahertz (THz) generation crystal BNA has recently gained traction as a valuable source to produce broadband THz pulses. Even when pumped with 800-nm light, thin BNA crystals can produce relatively high electric fields with frequency components out to 5 THz. However, the THz output when pumped with 800-nm light is limited by the damage threshold of the organic crystal. Here we report…
▽ More
The organic terahertz (THz) generation crystal BNA has recently gained traction as a valuable source to produce broadband THz pulses. Even when pumped with 800-nm light, thin BNA crystals can produce relatively high electric fields with frequency components out to 5 THz. However, the THz output when pumped with 800-nm light is limited by the damage threshold of the organic crystal. Here we report that the damage threshold of BNA can be significantly improved by physically bonding BNA to a high-thermal conductivity sapphire window. When pumped with 800-nm light from an amplified Ti:sapphire laser system, our bonded BNA (BNA-sapphire) generates 2.5 times higher electric field strengths compared to bare BNA crystals. We characterize the average damage threshold for bare BNA and BNA-sapphire, measure peak-to-peak electric field strengths and THz waveforms, and determine the nonlinear transmission in BNA. Pumping BNA-sapphire with 800-nm light results in peak-to-peak electric fields exceeding 1 MV/cm, with strong broadband frequency components from 0.5-5 THz. Our BNA-sapphire THz source is a promising alternative to tilted pulse front LiNbO3 THz sources, which will enable many research groups without optical parametric amplifiers to perform high-field, broadband THz spectroscopy.
△ Less
Submitted 5 October, 2020;
originally announced October 2020.
-
Comprehensive Characterization of Terahertz Generation with the Organic Crystal BNA
Authors:
Isaac C. Tangen,
Gabriel A. Valdivida-Berroeta,
Larry K. Heki,
Zachary B. Zaccardi,
Erika W. Jackson,
Charles B. Bahr,
David J. Michaelis,
Jeremy A. Johnson
Abstract:
We characterize the terahertz (THz) generation of N-benzyl-2-methyl-4-nitroaniline (BNA), with crystals ranging in thickness from 123-700 μm. We compare excitation using 800-nm and 1250 to 1500-nm wavelengths. Pumping BNA with 800-nm wavelengths and longer near-infrared wavelengths results in a broad spectrum, producing out to 6 THz using a 100-fs pump, provided the BNA crystal is thin enough. ~20…
▽ More
We characterize the terahertz (THz) generation of N-benzyl-2-methyl-4-nitroaniline (BNA), with crystals ranging in thickness from 123-700 μm. We compare excitation using 800-nm and 1250 to 1500-nm wavelengths. Pumping BNA with 800-nm wavelengths and longer near-infrared wavelengths results in a broad spectrum, producing out to 6 THz using a 100-fs pump, provided the BNA crystal is thin enough. ~200 μm or thinner crystals are required to produce a broad spectrum with an 800-nm pump, whereas ~300 μm thick crystals are optimal for broadband THz generation using the longer wavelengths. We report the favorable THz generation and optical characteristics of our BNA crystals that make them attractive for broadband, high-field THz generation, and we also find significant differences to BNA results reported in other works.
△ Less
Submitted 13 July, 2020; v1 submitted 12 May, 2020;
originally announced May 2020.
-
A tunable ferroelectric based unreleased RF resonator
Authors:
Yanbo He,
Bichoy Bahr,
Mengwei Si,
Peide Ye,
Dana Weinstein
Abstract:
This paper introduces the first tunable ferroelectric capacitor (FeCAP) based unreleased RF MEMS resonator, integrated seamlessly in Texas Instruments' 130nm Ferroelectric RAM (FeRAM) technology. An array of FeCAPs in this complementary metal-oxide-semiconductor (CMOS) technology's back-end-of-line (BEOL) process were used to define the acoustic resonance cavity as well as the electromechanical tr…
▽ More
This paper introduces the first tunable ferroelectric capacitor (FeCAP) based unreleased RF MEMS resonator, integrated seamlessly in Texas Instruments' 130nm Ferroelectric RAM (FeRAM) technology. An array of FeCAPs in this complementary metal-oxide-semiconductor (CMOS) technology's back-end-of-line (BEOL) process were used to define the acoustic resonance cavity as well as the electromechanical transducers. To achieve high quality factor (Q) of the resonator, acoustic waveguiding for vertical confinement within the CMOS stack is studied and optimized. Additional design considerations are discussed to obtain lateral confinement and suppression of spurious modes. An FeCAP resonator is demonstrated with fundamental resonance at 703 MHz and Q of 1012. This gives a frequency quality factor product fQ = 7.11$\times$10$^1$$^1$ which is 1.6$\times$ higher than the most state-of-the-art Pb(Zr,Ti)O$_3$ (PZT) resonators. Due to the ferroelectric characteristics of the FeCAPs, transduction of the resonator can be switched on and off by adjusting the electric polarization. In this case, the resonance can be turned off completely at $\pm$0.3V corresponding to the coercive voltage of the constituent FeCAP transducers. These novel switchable resonators may have promising applications in on-chip timing, ad-hoc radio front ends, and chip-scale sensors.
△ Less
Submitted 14 May, 2019;
originally announced May 2019.
