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Self-assembling of multilayered polymorphs with ion beams
Authors:
Alexander Azarov,
Cristian Radu,
Augustinas Galeckas,
Ionel Florinel Mercioniu,
Adrian Cernescu,
Vishnukanthan Venkatachalapathy,
Edouard Monakhov,
Flyura Djurabekova,
Corneliu Ghica,
Junlei Zhao,
Andrej Kuznetsov
Abstract:
Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice symmetries. Thus, if stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallizatio…
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Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice symmetries. Thus, if stacked together into multilayers, polymorphs may work as an alternative approach to the sequential deposition of layers with different chemical compositions. However, selective polymorph crystallization during conventional thin film synthesis is not trivial; e.g. opting for step-like changes of temperature and/or pressure correlated with switching from one polymorph to another during synthesis is tricky, since it may cause degradation of the structural quality. In the present work, applying the disorder-induced ordering approach we fabricated such multilayered polymorph structures using ion beams. We show that during ion irradiation of gallium oxide, the dynamic annealing of disorder may be tuned towards self-assembling of several polymorph interfaces, consistently with theoretical modelling. Specifically, we demonstrated multilayers with two polymorph interface repetitions obtained in one ion beam assisted fabrication step. Importantly, single crystal structure of the polymorphs was maintained in between interfaces exhibiting repeatable crystallographic relationships, correlating with optical cross-sectional maps. This data paves the way for enhancing functionalities in materials with not previously thought capabilities of ion beam technology.
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Submitted 30 April, 2024;
originally announced April 2024.
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Crystallization Instead of Amorphization in Collision Cascades in Gallium Oxide
Authors:
Junlei Zhao,
Javier García Fernández,
Alexander Azarov,
Ru He,
Øystein Prytz,
Kai Nordlund,
Mengyuan Hua,
Flyura Djurabekova,
Andrej Kuznetsov
Abstract:
Disordering of solids typically leads to amorphization, but polymorph transitions, facilitated by favorable atomic rearrangements, may temporarily help to maintain long-range periodicity in the solid state. In far-from-equilibrium situations, such as atomic collision cascades, these rearrangements may not necessarily follow a thermodynamically gainful path, but may be kinetically limited. In this…
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Disordering of solids typically leads to amorphization, but polymorph transitions, facilitated by favorable atomic rearrangements, may temporarily help to maintain long-range periodicity in the solid state. In far-from-equilibrium situations, such as atomic collision cascades, these rearrangements may not necessarily follow a thermodynamically gainful path, but may be kinetically limited. In this Letter, we focused on such crystallization instead of amorphization in collision cascades in gallium oxide (\ce{Ga2O3}). We determined the disorder threshold for irreversible $β$-to-$γ$ polymorph transition and explained why it results in elevating energy to that of the $γ$-polymorph, which exhibits the highest polymorph energy in the system below the amorphous state. Specifically, we demonstrate that upon reaching the disorder transition threshold, the \ce{Ga}-sublattice kinetically favors transitioning to the $γ$-like configuration, requiring significantly less migration for \ce{Ga} atoms to reach the lattice sites during post-cascade processes. As such, our data provide a consistent explanation of this remarkable phenomenon and can serve as a toolbox for predictive multi-polymorph fabrication.
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Submitted 7 March, 2024; v1 submitted 15 January, 2024;
originally announced January 2024.
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Universal radiation tolerant semiconductor
Authors:
Alexander Azarov,
Javier García Fernández,
Junlei Zhao,
Flyura Djurabekova,
Huan He,
Ru He,
Øystein Prytz,
Lasse Vines,
Umutcan Bektas,
Paul Chekhonin,
Nico Klingner,
Gregor Hlawacek,
Andrej Kuznetsov
Abstract:
Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Speci…
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Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in gamma-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the beta-to-gamma Ga2O3 transformation, as a function of the increased disorder in beta-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that gamma/beta double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors.
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Submitted 14 August, 2023; v1 submitted 23 March, 2023;
originally announced March 2023.
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Interplay of the disorder and strain in gallium oxide
Authors:
Alexander Azarov,
Vishnukanthan Venkatachalapathy,
Platon Karaseov,
Andrei Titov,
Konstantin Karabeshkin,
Andrei Struchkov,
Andrej Kuznetsov
Abstract:
Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the present paper we observed an interesting interplay between the disorder and strain in monoclinic \b{eta}-Ga2O3 single crystals by comparing atomic and cl…
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Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the present paper we observed an interesting interplay between the disorder and strain in monoclinic \b{eta}-Ga2O3 single crystals by comparing atomic and cluster ion irradiations as well as atomic ions co-implants. The results obtained by a combination of the channeling technique, x-ray diffraction and theoretical calculations show that the disorder accumulation in \b{eta}-Ga2O3 exhibits superlinear behavior as a function of the collision cascade density. Moreover, the level of strain in the implanted region can be engineered by changing the disorder conditions in the near surface layer. The results can be used for better understanding of the radiation effects in \b{eta}-Ga2O3 and imply that disorder/strain interplay provides an additional degree of freedom to maintain desirable strain in Ga2O3, potentially applicable to modify the rate of the polymorphic transitions in this material.
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Submitted 13 September, 2022; v1 submitted 28 April, 2022;
originally announced April 2022.
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Disorder-induced ordering in gallium oxide polymorphs
Authors:
Alexander Azarov,
Calliope Bazioti,
Vishnukanthan Venkatachalapathy,
Ponniah Vajeeston,
Edouard Monakhov,
Andrej Kuznetsov
Abstract:
Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure/strain can also be induced by the gradually accumulated radiation disorder. However, in semiconductors, the radiation disorder accumulation typically results in the amorphization instead of engaging polymorphism. By studying these phenomena in gallium oxide we found that the amorphization…
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Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure/strain can also be induced by the gradually accumulated radiation disorder. However, in semiconductors, the radiation disorder accumulation typically results in the amorphization instead of engaging polymorphism. By studying these phenomena in gallium oxide we found that the amorphization may be prominently suppressed by the monoclinic to orthorhombic phase transition. Utilizing this discovery, a highly oriented single-phase orthorhombic film on the top of the monoclinic gallium oxide substrate was fabricated. Exploring this system, a novel mode of a lateral polymorphic regrowth, not previously observed in solids, was detected. In combination, these data envisage a new direction of research on polymorphs in Ga2O3 and, potentially, for similar polymorphic families in other materials.
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Submitted 7 January, 2022; v1 submitted 1 September, 2021;
originally announced September 2021.
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Numerical study of the normal current density behaviour in a narrow - gap glow discharge
Authors:
S. A. Starostin,
P. J. M. Peters,
E. Kindel,
A. V. Azarov,
S. V. Mitko,
K. J. Boller
Abstract:
A numerical study of normal glow discharge properties was performed in the case of small electrodes separations (0.05-0.4 cm) and moderate gas pressures (10-46 Torr). A recently observed new experimental effect of a considerable reduction in the normal current density for smaller discharge lengths was analyzed both by means of 2D fluid model and by a minimal 1D drift model of gas discharge. A go…
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A numerical study of normal glow discharge properties was performed in the case of small electrodes separations (0.05-0.4 cm) and moderate gas pressures (10-46 Torr). A recently observed new experimental effect of a considerable reduction in the normal current density for smaller discharge lengths was analyzed both by means of 2D fluid model and by a minimal 1D drift model of gas discharge. A good agreement between theoretical and experimental behaviour was demonstrated. An influence of the electrodes separation and of the gas heating on the value of the normal current density is discussed.
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Submitted 9 September, 2004;
originally announced September 2004.
