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Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions
Authors:
Louis Farcis,
Bruno Teixeira,
Philippe Talatchian,
David Salomoni,
Ursula Ebels,
Stéphane Auffret,
Bernard Dieny,
Frank Mizrahi,
Julie Grollier,
Ricardo Sousa,
Liliana Buda-Prejbeanu
Abstract:
Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how voltage driven magnetization dynamics of dual free layer perpendicular magnetic tunnel junctions enable to emulate spiking neurons in hardware. The output spikin…
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Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how voltage driven magnetization dynamics of dual free layer perpendicular magnetic tunnel junctions enable to emulate spiking neurons in hardware. The output spiking rate was controlled by varying the dc bias voltage across the device. The field-free operation of this two terminal device and its robustness against an externally applied magnetic field make it a suitable candidate to mimic neuron response in a dense Neural Network (NN). The small energy consumption of the device (4-16 pJ/spike) and its scalability are important benefits for embedded applications. This compact perpendicular magnetic tunnel junction structure could finally bring spiking neural networks (SNN) to sub-100nm size elements.
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Submitted 14 September, 2023;
originally announced September 2023.
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Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions
Authors:
D. Salomoni,
Y. Peng,
L. Farcis,
S. Auffret,
M. Hehn,
G. Malinowski,
S. Mangin,
B. Dieny,
L. D. Buda-Prejbeanu,
R. C. Sousa,
I. L. Prejbeanu
Abstract:
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin orbit torque. In this work we demonstrate successful field-free 50fs single laser pulse driven magnetization reversal of [Tb/Co] based storage layer in…
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Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin orbit torque. In this work we demonstrate successful field-free 50fs single laser pulse driven magnetization reversal of [Tb/Co] based storage layer in a perpendicular magnetic tunnel junction. The nanofabricated magnetic tunnel junction devices have an optimized bottom reference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to 74\% after patterning down to sub-100nm lateral dimensions. Experiments on continuous films reveal peculiar reversal patterns of concentric rings with opposite magnetic directions, above certain threshold fluence. These rings have been correlated to patterned device switching probability as a function of the applied laser fluence. Moreover, the magnetization reversal is independent on the duration of the laser pulse. According to our macrospin model, the underlying magnetization reversal mechanism can be attributed to an in-plane reorientation of the magnetization due to a fast reduction of the out-of-plane uniaxial anisotropy. These aspects are of great interest both for the physical understanding of the switching phenomenon and their consequences for all-optical-switching memory devices, since they allow for a large fluence operation window with high resilience to pulse length variability.
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Submitted 24 May, 2023;
originally announced May 2023.
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Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction
Authors:
Marco Mansueto,
Antoine Chavent,
Stephane Auffret,
Isabelle Joumard,
Jayshankar Nath,
Ioan M. Miron,
Ursula Ebels,
Ricardo C. Sousa,
Liliana D. Buda-Prejbeanu,
Ioan L. Prejbeanu,
Bernard Dieny
Abstract:
We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel junctions. For this, it is necessary to design a free layer whose magnetization can be stabilized along several or even any in-plane direction between the parallel an…
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We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel junctions. For this, it is necessary to design a free layer whose magnetization can be stabilized along several or even any in-plane direction between the parallel and the antiparallel magnetic configurations. We experimentally show that this can be achieved by exploiting antiferromagnet-ferromagnet exchange interactions in a regime where the antiferromagnet is thin enough to induce enhanced coercivity and no exchange bias. The frustration of exchange interactions at the interfaces due to competing ferro- and antiferromagnetic interactions is at the origin of an isotropic dissipation mechanism yielding isotropic coercivity. From a modeling point of view, it is shown that this isotropic dissipation can be described by a dry friction term in the Landau-Lifshitz-Gilbert equation. The influence of this dry friction term on the magnetization dynamics of an in-plane magnetized layer submitted to a rotating in-plane field is investigated both analytically and numerically. The possibility to control the free layer magnetization orientation in an in-plane magnetized magnetic tunnel junction by using the spin transfer torque from an additional perpendicular polarizer is also investigated through macrospin simulation. It is shown that the memristor function can be achieved by the injection of current pulses through the stack in the presence of an in-plane static field transverse to the reference layer magnetization, the aim of which is to limit the magnetization rotation between 0° and 180°.
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Submitted 19 March, 2020;
originally announced March 2020.
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Creation of Magnetic Skyrmion Bubble Lattices by Ultrafast Laser in Ultrathin Films
Authors:
Soong-Geun Je,
Pierre Vallobra,
Titiksha Srivastava,
Juan-Carlos Rojas-Sánchez,
Thai Ha Pham,
Michel Hehn,
Gregory Malinowski,
Claire Baraduc,
Stéphane Auffret,
Gilles Gaudin,
Stéphane Mangin,
Hélène Béa,
Olivier Boulle
Abstract:
Magnetic skyrmions are topologically nontrivial spin textures which hold great promise as stable information carriers in spintronic devices at the nanoscale. One of the major challenges for developing novel skyrmion-based memory and logic devices is fast and controlled creation of magnetic skyrmions at ambient conditions. Here we demonstrate the single ultrafast (35-fs) laser pulse-induced generat…
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Magnetic skyrmions are topologically nontrivial spin textures which hold great promise as stable information carriers in spintronic devices at the nanoscale. One of the major challenges for developing novel skyrmion-based memory and logic devices is fast and controlled creation of magnetic skyrmions at ambient conditions. Here we demonstrate the single ultrafast (35-fs) laser pulse-induced generation of skyrmion bubbles and skyrmion bubble lattices from a ferromagnetic state in sputtered ultrathin magnetic films at room temperature. The skyrmion bubble density increases with the laser fluence in a controlled way, and it finally becomes saturated, forming disordered hexagonal lattices. Moreover, we present that the skyrmion bubble lattice configuration leads to enhanced topological stability as compared to isolated skyrmions, suggesting its promising use in data storage. Our findings shed light on the optical approach to the skyrmion bubble lattice in commonly accessible materials, paving the road toward the emerging skyrmion-based memory and synaptic devices.
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Submitted 10 September, 2018; v1 submitted 3 August, 2018;
originally announced August 2018.
