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Highly stable aluminum air-bridges with stiffeners
Authors:
Aleksey N. Bolgar,
Daria A. Kalacheva,
Viktor B. Lubsanov,
Aleksei Yu. Dmitriev,
Evgenia S. Alekseeva,
Evgeny V. Korostylev,
Oleg V. Astafiev
Abstract:
Air-bridges play a critical role in the performance of microwave circuits integrated with superconducting quantum bits, and their mechanical stability is predominant for reliable operation. This study is devoted to the technological issues that lead to air-bridge instability. We propose an optimized bridge geometry designed to enhance mechanical resilience. Through systematic testing, we establish…
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Air-bridges play a critical role in the performance of microwave circuits integrated with superconducting quantum bits, and their mechanical stability is predominant for reliable operation. This study is devoted to the technological issues that lead to air-bridge instability. We propose an optimized bridge geometry designed to enhance mechanical resilience. Through systematic testing, we established that bridges incorporating this novel geometry achieved complete stability for lengths up to 170 micrometers in our technological processes. The findings provide an insight into the problem and a practical solution for technologists that faced with the challenges of air-bridge stability. The implementation of our technology has the potential to significantly improve the mechanical robustness of air-bridges in multi-qubit circuits for quantum computation.
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Submitted 30 October, 2024;
originally announced October 2024.
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Direct experimental observation of sub-poissonian photon statistics by means of multi-photon scattering on a two-level system
Authors:
A. Yu. Dmitriev,
A. V. Vasenin,
S. A. Gunin,
S. V. Remizov,
A. A. Elistratov,
W. V. Pogosov,
O. V. Astafiev
Abstract:
A cascade of two-level superconducting artificial atoms -- a source and a probe -- strongly coupled to a semi-infinite waveguide is a promising tool for observing nontrivial phenomena in quantum nonlinear optics. The probe atom can scatter an antibunched radiation emitted from the source, thereby generating a field with specific properties. We experimentally demonstrate wave mixing between nonclas…
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A cascade of two-level superconducting artificial atoms -- a source and a probe -- strongly coupled to a semi-infinite waveguide is a promising tool for observing nontrivial phenomena in quantum nonlinear optics. The probe atom can scatter an antibunched radiation emitted from the source, thereby generating a field with specific properties. We experimentally demonstrate wave mixing between nonclassical light from the coherently cw-pumped source and another coherent wave acting on the probe. We observe unique features in the wave mixing stationary spectrum which differs from mixing spectrum of two classical waves on the probe. These features are well described by adapting the theory for a strongly coupled cascaded system of two atoms. We further analyze the theory to predict non-classical mixing spectra for various ratios of atoms' radiative constants. Both experimental and numerical results confirm the domination of multi-photon scattering process with only a single photon from the source. We evaluate entanglement of atoms in the quasistationary state and illustrate the connection between the expected second-order correlation function of source's field and wave mixing side peaks corresponding to a certain number of scattered photons.
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Submitted 17 September, 2024;
originally announced September 2024.
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Evolution of coherent waves driving a single artificial atom
Authors:
A. V. Vasenin,
Sh. V. Kadyrmetov,
A. N. Bolgar,
A. Yu. Dmitriev,
O. V. Astafiev
Abstract:
An electromagnetic wave propagating through a waveguide with a strongly coupled superconducting artificial two-level atom exhibits an evolving superposition with the atom. The Rabi oscillations in the atom result from a single excitation-relaxation, corresponding to photon absorption and stimulated emission from/to the field. In this study, we investigate the time-dependent behavior of the transmi…
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An electromagnetic wave propagating through a waveguide with a strongly coupled superconducting artificial two-level atom exhibits an evolving superposition with the atom. The Rabi oscillations in the atom result from a single excitation-relaxation, corresponding to photon absorption and stimulated emission from/to the field. In this study, we investigate the time-dependent behavior of the transmitted field and extract its spectra. The scattered fields are described using input-output theory. We demonstrate that the time evolution of the propagating fields, due to interaction, encapsulates all information about the atom. Additionally, we deduce the dynamics of the incoherent radiation component from the measured first-order correlation function of the field.
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Submitted 6 September, 2023; v1 submitted 4 September, 2023;
originally announced September 2023.
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Overcoming photon blockade in circuit QED single-atom maser with engineered metastability and strong coupling
Authors:
A. A. Sokolova,
D. A. Kalacheva,
G. P. Fedorov,
O. V. Astafiev
Abstract:
Reaching high cavity population with a coherent pump in the strong-coupling regime of a single-atom laser is impossible due to the photon blockade effect. In this work, we experimentally demonstrate that in a single-atom maser based on a transmon strongly coupled to two resonators it is possible to pump over a dozen of photons into the system. The first high-quality resonator plays a role of usual…
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Reaching high cavity population with a coherent pump in the strong-coupling regime of a single-atom laser is impossible due to the photon blockade effect. In this work, we experimentally demonstrate that in a single-atom maser based on a transmon strongly coupled to two resonators it is possible to pump over a dozen of photons into the system. The first high-quality resonator plays a role of usual lasing cavity, and the second one presents a controlled dissipation channel, bolstering population inversion, and modifies the energy level structure to lift the blockade. As a confirmation of lasing action, we observe conventional laser features such as the narrowing of emission linewidth and external signal amplification. Additionally, we report unique single-atom features: self-quenching and several lasing thresholds.
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Submitted 12 September, 2022;
originally announced September 2022.
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Effects of photon statistics in wave mixing on a single qubit
Authors:
W. V. Pogosov,
A. Yu. Dmitriev,
O. V. Astafiev
Abstract:
We theoretically consider wave mixing under the irradiation of a single qubit by two photon fields. The first signal is a classical monochromatic drive, while the second one is a nonclassical light. Particularly, we address two examples of a nonclassical light: (i) a broadband squeezed light and (ii) a periodically excited quantum superposition of Fock states with 0 and 1 photons. The mixing of cl…
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We theoretically consider wave mixing under the irradiation of a single qubit by two photon fields. The first signal is a classical monochromatic drive, while the second one is a nonclassical light. Particularly, we address two examples of a nonclassical light: (i) a broadband squeezed light and (ii) a periodically excited quantum superposition of Fock states with 0 and 1 photons. The mixing of classical and nonclassical photon fields gives rise to side peaks due to the elastic multiphoton scattering. We show that side peaks structure is distinct from the situation when two classical fields are mixed. The most striking feature is that some peaks are absent. The analysis of peak amplitudes can be used to probe photon statistics in the nonclassical mode.
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Submitted 22 July, 2021;
originally announced July 2021.
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Light-dressing of a diatomic superconducting artificial molecule
Authors:
G. P. Fedorov,
V. B. Yursa,
A. E. Efimov,
K. I. Shiianov,
A. Yu. Dmitriev,
I. A. Rodionov,
A. A. Dobronosova,
D. O. Moskalev,
A. A. Pishchimova,
E. I. Malevannaya,
O. V. Astafiev
Abstract:
In this work, we irradiate a superconducting artificial molecule composed of two coupled tunable transmons with microwave light while monitoring its state via joint dispersive readout. Performing high-power spectroscopy, we observe and identify a variety of single- and multiphoton transitions. We also find that at certain fluxes, the measured spectrum of the system deviates significantly from the…
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In this work, we irradiate a superconducting artificial molecule composed of two coupled tunable transmons with microwave light while monitoring its state via joint dispersive readout. Performing high-power spectroscopy, we observe and identify a variety of single- and multiphoton transitions. We also find that at certain fluxes, the measured spectrum of the system deviates significantly from the solution of the stationary Schrödinger equation with no driving. We reproduce these unusual spectral features by solving numerically the full master equation for a steady-state and attribute them to an Autler-Townes-like effect in which a single tone is simultaneously dressing the system and probing the transitions between new eigenstates. We show that it is possible to find analytically the exact frequencies at which the satellite spectral lines appear by solving self-consistent equations in the rotating frame. Our approach agrees well with both the experiment and the numerical simulation.
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Submitted 5 June, 2020; v1 submitted 27 January, 2020;
originally announced January 2020.
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Two-level system as a quantum sensor of absolute power
Authors:
T. Hönigl-Decrinis,
R. Shaikhaidarov,
S. E. de Graaf,
V. N. Antonov,
O. V. Astafiev
Abstract:
A two-level quantum system can absorb or emit not more than one photon at a time. Using this fundamental property, we demonstrate how a superconducting quantum system strongly coupled to a transmission line can be used as a sensor of the photon flux. We propose four methods of sensing the photon flux and analyse them for the absolute calibration of power by measuring spectra of scattered radiation…
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A two-level quantum system can absorb or emit not more than one photon at a time. Using this fundamental property, we demonstrate how a superconducting quantum system strongly coupled to a transmission line can be used as a sensor of the photon flux. We propose four methods of sensing the photon flux and analyse them for the absolute calibration of power by measuring spectra of scattered radiation from the two-level system. This type of sensor can be tuned to operate in a wide frequency range, and does not disturb the propagating waves when not in use. Using a two-level system as a power sensor enables a range of applications in quantum technologies, here in particular applied to calibrate the attenuation of transmission lines inside dilution refrigerators.
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Submitted 8 January, 2020; v1 submitted 13 May, 2019;
originally announced May 2019.
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Application of elastic mid-IR-laser-light scattering for non-destructive inspection in microelectronics
Authors:
V. P. Kalinushkin,
V. A. Yuryev,
O. V. Astafiev,
A. N. Buzynin,
N. I. Bletskan
Abstract:
Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the paper. The conclusion is made that the techniques in question might be very useful for solving a large number of problems regarding defect investigations and qua…
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Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the paper. The conclusion is made that the techniques in question might be very useful for solving a large number of problems regarding defect investigations and quality monitoring both in research laboratories and the industry of microelectronics
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Submitted 7 June, 2011;
originally announced June 2011.
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Application of elastic mid-IR light scattering for inspection of internal gettering operations
Authors:
O. V. Astafiev,
A. N. Buzynin,
V. P. Kalinushkin,
V. A. Yuryev
Abstract:
Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of the internal gettering efficiency and stability have been practically absent thus far. The purpose of this paper is to present such a method developed on the basis of law-angle mid-IR-light scattering technique (LALS), whi…
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Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of the internal gettering efficiency and stability have been practically absent thus far. The purpose of this paper is to present such a method developed on the basis of law-angle mid-IR-light scattering technique (LALS), which has been successfully applied thus far for the investigation of large-scale electrically active defect accumulations (LSDAs) in semiconductor crystals.
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Submitted 6 June, 2011;
originally announced June 2011.
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Optical beam-induced scattering mode of mid-IR laser microscopy: a method for defect investigation in near-surface and near-interface regions of bulk semiconductors
Authors:
O. V. Astafiev,
V. P. Kalinushkin,
V. A. Yuryev
Abstract:
This paper presents a new technique of optical beam-induced scattering of mid-IR-laser radiation, which is a special mode of the recently developed scanning mid-IR-laser microscopy. The technique in its present form is designed for investigation of large-scale recombination-active defects in near-surface and near-interface regions of semiconductor wafers. However, it can be easily modified for the…
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This paper presents a new technique of optical beam-induced scattering of mid-IR-laser radiation, which is a special mode of the recently developed scanning mid-IR-laser microscopy. The technique in its present form is designed for investigation of large-scale recombination-active defects in near-surface and near-interface regions of semiconductor wafers. However, it can be easily modified for the defect investigations in the crystal bulk. Being in many respects analogous to EBIC, the present technique has some indisputable advantages, which enable its application for both non-destructive laboratory investigations and quality monitoring in the industry.
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Submitted 3 June, 2011;
originally announced June 2011.
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Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors
Authors:
O. V. Astafiev,
V. P. Kalinushkin,
V. A. Yuryev
Abstract:
A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique---a mid-IR-laser microscope---being sensitive to accumulations of free carriers enables the study of both accumulations of electrically-active defects or impurities in bulk semiconductors and doped domains in semiconductor…
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A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique---a mid-IR-laser microscope---being sensitive to accumulations of free carriers enables the study of both accumulations of electrically-active defects or impurities in bulk semiconductors and doped domains in semiconductor structures. The optical beam induced scattering mode of this microscope is designed for the investigation of recombination-active defects but unlike EBIC it requires neither Schottky barrier or p--n junction nor special preparation of samples
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Submitted 3 June, 2011;
originally announced June 2011.
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On the nature of large-scale defect accumulations in Czochralski-grown silicon
Authors:
V. P. Kalinushkin,
A. N. Buzynin,
V. A. Yuryev,
O. V. Astafiev,
D. I. Murin
Abstract:
Czochralski-grown boron-doped silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a float zone-grown silicon. A classifcation of th…
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Czochralski-grown boron-doped silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a float zone-grown silicon. A classifcation of the large-scale impurity accumulations in CZ Si:B is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si:B is also proposed.
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Submitted 30 August, 2010; v1 submitted 27 August, 2010;
originally announced August 2010.
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Possibilities of application of elastic mid-IR light scattering for inspection of internal gettering operations
Authors:
O. V. Astafiev,
A. N. Buzynin,
V. P. Kalinushkin,
D. I. Murin,
V. A. Yuryev
Abstract:
A method of low-angle mid-IR light scattering is shown to be applicable for the contactless and non-destructive inspection of the internal gettering process in CZ Si crystals. A classifcation of scattering inhomogeneities in initial crystals and crystals subjected to the getting process is presented.
A method of low-angle mid-IR light scattering is shown to be applicable for the contactless and non-destructive inspection of the internal gettering process in CZ Si crystals. A classifcation of scattering inhomogeneities in initial crystals and crystals subjected to the getting process is presented.
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Submitted 30 August, 2010; v1 submitted 26 August, 2010;
originally announced August 2010.
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Scanning mid-IR-laser microscopy: an efficient tool for materials studies in silicon-based photonics and photovoltaics
Authors:
O. V. Astafiev,
V. P. Kalinushkin,
V. A. Yuryev
Abstract:
A method of scanning mid-IR-laser microscopy has recently been proposed for the investigation of large-scale electrically and recombination-active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of investigations on low-angle mid-IR-l…
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A method of scanning mid-IR-laser microscopy has recently been proposed for the investigation of large-scale electrically and recombination-active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of investigations on low-angle mid-IR-light scattering in semiconductors. The essence of the technical idea was to apply the dark-field method for spatial filtering of the scattered light in the scanning mid-IR-laser microscope together with the local photoexcitation of excess carriers within a small domain in a studied sample, thus forming an artificial source of scattering of the probe IR light for the recombination contrast imaging of defects.
The current paper presents three contrasting examples of application of the above technique for defect visualization in silicon-based materials designed for photovoltaics and photonics which demonstrate that this technique might be an efficient tool for both defect investigation and industrial testing of semiconducting materials.
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Submitted 24 August, 2010;
originally announced August 2010.
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Application of scanning mid-IR-laser microscopy for characterization of semiconductor materials for photovoltaics
Authors:
V. P. Kalinushkin,
O. V. Astafiev,
V. A. Yuryev
Abstract:
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ SixGe1-x -- a promising material for photovoltaics - and multicrystalline silicon for solar cells. In addition, this technique was shown to be appropriate for imaging of polishing-…
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The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ SixGe1-x -- a promising material for photovoltaics - and multicrystalline silicon for solar cells. In addition, this technique was shown to be appropriate for imaging of polishing-induced defects as well as such huge defects as "pin holes". Besides, previously unexplained "anomalous" (cubic power) dependence of signal of the scanning mid-IR-laser microscope in the optical-beam-induced light scattering mode on the photoexcitation power obtained for mechanically polished samples has now been attributed to the excess carrier scattering on charged linear defects, likely dislocation lines. The conclusion is made in the article that the scanning mid-IR-laser microscopy may serve as very effective tool for defect investigations in materials for modern photovoltaics.
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Submitted 24 August, 2010;
originally announced August 2010.
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Elastic Mid-Infrared Light Scattering: a Basis for Microscopy of Large-Scale Electrically Active Defects in Semiconducting Materials
Authors:
V. P. Kalinushkin,
V. A. Yuryev,
O. V. Astafiev
Abstract:
A method of the mid-IR-laser microscopy has been proposed for the investigation of the large-scale electrically and recombination active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of the investigations on the low-angle mid-IR-lig…
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A method of the mid-IR-laser microscopy has been proposed for the investigation of the large-scale electrically and recombination active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of the investigations on the low-angle mid-IR-light scattering in semiconductors. The essence of the technical idea was to apply the dark-field method for spatial filtering of the scattered light in the scanning mid-IR-laser microscope. This approach enabled the visualization of large-scale electrically active defects which are the regions enriched with ionized electrically active centers. The photoexcitation of excess carriers within a small volume located in the probe mid-IR-laser beam enabled the visualization of the large-scale recombination-active defects like those revealed in the optical or electron beam induced current methods. Both these methods of the scanning mid-IR-laser microscopy are now introduced in detail in the present paper as well as a summary of techniques used in the standard method of the lowangle mid-IR-light scattering itself. Besides the techniques for direct observations, methods for analyses of the defect composition associated with the mid-IR-laser microscopy are also discussed in the paper.
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Submitted 10 August, 2010;
originally announced August 2010.
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Resonance Fluorescence of a Single Artificial Atom
Authors:
O. Astafiev,
A. M. Zagoskin,
A. A. Abdumalikov Jr.,
Yu. A. Pashkin,
T. Yamamoto,
K. Inomata,
Y. Nakamura,
J. S. Tsai
Abstract:
An atom in open space can be detected by means of resonant absorption and reemission of electromagnetic waves, known as resonance fluorescence, which is a fundamental phenomenon of quantum optics. We report on the observation of scattering of propagating waves by a single artificial atom. The behavior of the artificial atom, a superconducting macroscopic two-level system, is in a quantitative ag…
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An atom in open space can be detected by means of resonant absorption and reemission of electromagnetic waves, known as resonance fluorescence, which is a fundamental phenomenon of quantum optics. We report on the observation of scattering of propagating waves by a single artificial atom. The behavior of the artificial atom, a superconducting macroscopic two-level system, is in a quantitative agreement with the predictions of quantum optics for a pointlike scatterer interacting with the electromagnetic field in one-dimensional open space. The strong atom-field interaction as revealed in a high degree of extinction of propagating waves will allow applications of controllable artificial atoms in quantum optics and photonics.
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Submitted 26 February, 2010;
originally announced February 2010.
