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High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
Authors:
Seungheon Shin,
Hridibrata Pal,
Jon Pratt,
John Niroula,
Yinxuan Zhu,
Chandan Joishi,
Brianna A. Klein,
Andrew Armstrong,
Andrew A. Allerman,
Tomás Palacios,
Siddharth Rajan
Abstract:
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) w…
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We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) with an associated maximum current density of 342 mA/mm, and cut-off frequency of 9.1 GHz. Furthermore, low trap-related impact was observed from minimal gate and drain lag estimated from pulsed I-V characteristics. The reported results provide the potential of UWBG AlGaN HEFTs for the next generation high-power radio frequency applications.
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Submitted 17 April, 2025; v1 submitted 17 April, 2025;
originally announced April 2025.
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Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures
Authors:
Seungheon Shin,
Kyle Liddy,
Yinxuan Zhu,
Chandan Joishi,
Brianna A. Klein,
Andrew Armstrong,
Andrew A. Allerman,
Siddharth Rajan
Abstract:
We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future high-performance UWBG transistors. Using systematic experiments, we determined the fixed charge density (> 1013 cm-2), the dielectric/interface, and electric fields in the o…
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We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future high-performance UWBG transistors. Using systematic experiments, we determined the fixed charge density (> 1013 cm-2), the dielectric/interface, and electric fields in the oxide of under flat-band conditions in the semiconductor. Low gate-to-drain leakage current of up to 5 x 10-7 A/cm2 were obtained in the metal-oxide-semiconductor structures. In lateral metal-semiconductor-insulator test structures, breakdown voltage exceeding 1 kV was obtained with a channel sheet charge density of 1.27 x 1013 cm-2. The effective peak electric field and average breakdown field were estimated to be > 4.27 MV/cm and 1.99 MV/cm, respectively. These findings demonstrate the potential of Al2O2 integration for enhancing the breakdown performance of UWBG AlGaN HEMTs.
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Submitted 17 April, 2025; v1 submitted 1 April, 2025;
originally announced April 2025.
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Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
Authors:
Sheikh Ifatur Rahman,
Mohammad Awwad,
Chandan Joishi,
Zane-Jamal Eddine,
Brendan Gunning,
Andrew Armstrong,
Siddharth Rajan
Abstract:
GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage) control rather than current controlled schemes. Th…
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GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage) control rather than current controlled schemes. This approach can greatly reduce system complexity for the driver circuit arrays while maintaining device opto-electronic performance. In this work, we demonstrate a 3-terminal GaN micro-light emitting transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. The integrated device exhibits excellent gate control, drain current control and optical emission control. This work provides a promising pathway for future monolithic integration of GaN FETs with microLED to enable fast switching high efficiency microLED display and communication systems.
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Submitted 29 May, 2024; v1 submitted 7 April, 2024;
originally announced April 2024.
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Ultraviolet-ozone treatment: an effective method for fine-tuning optical and electrical properties of suspended and substrate-supported MoS2
Authors:
Fahrettin Sarcan,
Alex J. Armstrong,
Yusuf K. Bostan,
Esra Kus,
Keith McKenna,
Ayse Erol,
Yue Wang
Abstract:
Ultraviolet-ozone (UV-O3) treatment is a simple but effective technique for surface cleaning, surface sterilization, doping and oxidation, and is applicable to a wide range of materials. In this study, we investigated how UV-O3 treatment affects the optical and electrical properties of molybdenum disulfide (MoS2), with and without the presence of a dielectric substrate. We performed detailed photo…
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Ultraviolet-ozone (UV-O3) treatment is a simple but effective technique for surface cleaning, surface sterilization, doping and oxidation, and is applicable to a wide range of materials. In this study, we investigated how UV-O3 treatment affects the optical and electrical properties of molybdenum disulfide (MoS2), with and without the presence of a dielectric substrate. We performed detailed photoluminescence (PL) measurements on 1-7 layers of MoS2 with up to 8 minutes of UV-O3 exposure. Density functional theory (DFT) calculations were carried out to provide insight into oxygen-MoS2 interaction mechanisms. Our results showed that the influence of UV-O3 treatment on PL depends on whether the substrate is present, as well as the number of layers. The PL intensity of the substrate-supported MoS2 decreased dramatically with the increase of UV-O3 treatment time and was fully quenched after 8 mins. However, the PL intensity of the suspended flakes was less affected. 4 minutes of UV-O3 exposure was found to be optimal to produce p-type MoS2, while maintaining above 80% of the PL intensity and the emission wavelength, compared to pristine flakes (intrinsically n-type). Our electrical measurements showed that UV-O3 treatment for more than 6 minutes not only caused a reduction in the electron density but also deteriorated the hole-dominated transport. It is revealed that the substrate plays a critical role in the manipulation of the electrical and optical properties of MoS2, which should be considered in future device fabrication and applications.
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Submitted 7 September, 2023;
originally announced September 2023.
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Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs
Authors:
Yuewei Zhang,
Sriram Krishnamoorthy,
Fatih Akyol,
Jared M. Johnson,
Andrew A. Allerman,
Michael W. Moseley,
Andrew M. Armstrong,
Jinwoo Hwang,
Siddharth Rajan
Abstract:
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into p-AlGaN. The dependence of tunneling on the work function of the metal was investigated, and it was found that highly reflective Al metal layers can enable eff…
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In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into p-AlGaN. The dependence of tunneling on the work function of the metal was investigated, and it was found that highly reflective Al metal layers can enable efficient hole injection into p-AlGaN, despite the relatively low work function of Al. Efficient tunneling hole injection was confirmed by light emission at 326 nm with on-wafer peak external quantum efficiency and wall-plug efficiency of 2.65% and 1.55%, respectively. A high power density of 83.7 W/cm2 was measured at 1200 kA/cm2. The metal/semiconductor tunnel junction structure demonstrated here could provide significant advantages for efficient and manufacturable device topologies for high power UV emitters.
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Submitted 19 May, 2017;
originally announced May 2017.
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Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes
Authors:
Yuewei Zhang,
Sriram Krishnamoorthy,
Fatih Akyol,
Andrew A. Allerman,
Michael W. Moseley,
Andrew M. Armstrong,
Siddharth Rajan
Abstract:
We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to estimate the compensation and doping in p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type dopi…
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We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to estimate the compensation and doping in p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62% were achieved for tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be used to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs, and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.
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Submitted 17 August, 2016;
originally announced September 2016.
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The head leads the body: a curvature-based kinematic description of C. elegans
Authors:
Venkat Padmanabhan,
Zeina S. Khan,
Deepak E. Solomon,
Andrew Armstrong,
Kendra P. Rumbaugh,
Siva A. Vanapalli,
Jerzy Blawzdziewicz
Abstract:
Caenorhabditis elegans, a free-living soil nematode, propels itself by producing undulatory body motion and displays a rich variety of body shapes and trajectories during its locomotion in complex environments. Here we show that the complex shapes and trajectories of C. elegans have a simple analytical description in curvature representation. Our model is based on the assumption that the curvature…
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Caenorhabditis elegans, a free-living soil nematode, propels itself by producing undulatory body motion and displays a rich variety of body shapes and trajectories during its locomotion in complex environments. Here we show that the complex shapes and trajectories of C. elegans have a simple analytical description in curvature representation. Our model is based on the assumption that the curvature wave is generated in the head segment of the worm body and propagates backwards. We have found that a simple harmonic function for the curvature can capture multiple worm shapes during the undulatory movement. The worm body trajectories can be well represented in terms of piecewise sinusoidal curvature with abrupt changes in amplitude, wavevector, and phase.
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Submitted 13 February, 2012;
originally announced February 2012.
