Unveiling the double-peak structure of quantum oscillations in the specific heat
Authors:
Zhuo Yang,
Benoit Fauque,
Toshihiro Nomura,
Takashi Shitaokoshi,
Sunghoon Kim,
Debanjan Chowdhury,
Zuzana Pribulova,
Jozef Kacmarcik,
Alexandre Pourret,
Georg Knebel,
Dai Aoki,
Thierry Klein,
Duncan K. Maude,
Christophe Marcenat,
Yoshimitsu Kohama
Abstract:
Quantum oscillation phenomenon is an essential tool to understand the electronic structure of quantum matter. Here we report a systematic study of quantum oscillations in the electronic specific heat $C_{el}$ in natural graphite. We show that the crossing of a single spin Landau level and the Fermi energy give rise to a double-peak structure, in striking contrast to the single peak expected from L…
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Quantum oscillation phenomenon is an essential tool to understand the electronic structure of quantum matter. Here we report a systematic study of quantum oscillations in the electronic specific heat $C_{el}$ in natural graphite. We show that the crossing of a single spin Landau level and the Fermi energy give rise to a double-peak structure, in striking contrast to the single peak expected from Lifshitz-Kosevich theory. Intriguingly, the double-peak structure is predicted by the kernel term for $C_{el}/T$ in the free electron theory. The $C_{el}/T$ represents a spectroscopic tuning fork of width 4.8 $k_B T$ which can be tuned at will to resonance. Using a coincidence method, the double-peak structure can be used to accurately determine the Lande $g$-factor of quantum materials. More generally, the tuning fork can be used to reveal any peak in fermionic density of states tuned by magnetic field, such as Lifshitz transition in heavy-fermion compounds.
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Submitted 18 October, 2023; v1 submitted 6 September, 2023;
originally announced September 2023.
Proton radiation damage tolerance of wide dynamic range SOI pixel detectors
Authors:
Shun Tsunomachi,
Takayoshi Kohmura,
Kouichi Hagino,
Masatoshi Kitajima,
Toshiki Doi,
Daiki Aoki,
Asuka Ohira,
Yasuyuki Shimizu,
Kaito Fujisawa,
Shizusa Yamazaki,
Yuusuke Uchida,
Makoto Shimizu,
Naoki Itoh,
Yasuo Arai,
Toshinobu Miyoshi,
Ryutaro Nishimura,
Takeshi Go Tsuru,
Ikuo Kurachi
Abstract:
We have been developing the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed of a high-resistivity Si sensor, a SiO2 insulator, and CMOS pixel circuits utilizing Silicon-On-Insulator (SOI) technology. We have considered the possibility of…
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We have been developing the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed of a high-resistivity Si sensor, a SiO2 insulator, and CMOS pixel circuits utilizing Silicon-On-Insulator (SOI) technology. We have considered the possibility of using INTPIX to observe X-ray polarization in space. When the semiconductor detector is used in space, it is subject to radiation damage resulting from high-energy protons. Therefore, it is necessary to investigate whether INTPIX has high radiation tolerance for use in space. The INTPIX8 was irradiated with 6 MeV protons up to a total dose of 2 krad at HIMAC, National Institute of Quantum Science in Japan, and evaluated the degradation of the performance, such as energy resolution and non-uniformity of gain and readout noise between pixels. After 500 rad irradiation, which is the typical lifetime of an X-ray astronomy satellite, the degradation of energy resolution at 14.4 keV is less than 10%, and the non-uniformity of readout noise and gain between pixels is constant within 0.1%.
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Submitted 8 September, 2022;
originally announced September 2022.
