Showing 1–50 of 52 results for author: Ang, L K

Computational Design of Two-Dimensional MoSi$_2$N$_4$ Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes

Authors: Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain-Jong Li, Yee Sin Ang

Abstract: Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm. Two-dimensional (2D) semiconductors have emerged as strong candidates for overcoming short-channel effects due t… ▽ More Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm. Two-dimensional (2D) semiconductors have emerged as strong candidates for overcoming short-channel effects due to their atomically thin bodies, which inherently suppress electrostatic leakage and improve gate control in aggressively scaled field-effect transistors (FETs). Among the growing library of 2D materials, the MoSi$_2$N$_4$ family -- a synthetic septuple-layered materials -- has attracted increasing attention for its remarkable ambient stability, suitable bandgaps, and favorable carrier transport characteristics, making it a promising platform for next-generation transistors. While experimental realization of sub-10-nm 2D FETs remains technologically demanding, computational device simulation using first-principles density functional theory combined with nonequilibrium Green's function transport simulations provide a powerful and cost-effective route for exploring the performance limits and optimal design of ultrascaled FET. This review consolidates the current progress in the computational design of MoSi$_2$N$_4$ family FETs. We review the physical properties of MoSi$_2$N$_4$ that makes them compelling candidates for transistor applications, as well as the simulated device performance and optimization strategy of MoSi$_2$N$_4$ family FETs. Finally, we identify key challenges and research gaps, and outline future directions that could accelerate the practical deployment of MoSi$_2$N$_4$ family FET in the angström-scale CMOS era. △ Less

Submitted 26 June, 2025; originally announced June 2025.

Comments: 27 pages, 11 figures

Pressure-Driven Metallicity in Ångström-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2

Authors: Shuhua Wang, Shibo Fang, Qiang Li, Yunliang Yue, Zongmeng Yang, Xiaotian Sun, Jing Lu, Chit Siong Lau, L. K. Ang, Lain-Jong Li, Yee Sin Ang

Abstract: Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the ångström-thickness regime [Nature 639, 354 (2025)]. However, freestanding 2D Bi is typically known to exhibit a semiconducting phase [Nature 617, 67 (2023), Phys. Rev. Lett. 131, 236801 (2023)], which contradicts with the experimen… ▽ More Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the ångström-thickness regime [Nature 639, 354 (2025)]. However, freestanding 2D Bi is typically known to exhibit a semiconducting phase [Nature 617, 67 (2023), Phys. Rev. Lett. 131, 236801 (2023)], which contradicts with the experimentally observed metallicity in vdW-squeezed 2D Bi. Here we show that such discrepancy originates from the pressure-induced buckled-to-flat structural transition in 2D Bi, which changes the electronic structure from semiconducting to metallic phases. Based on the experimentally fabricated MoS2-Bi-MoS2 trilayer heterostructure, we demonstrate the concept of layer-selective Ohmic contact in which one MoS2 layer forms Ohmic contact to the sandwiched Bi monolayer while the opposite MoS2 layer exhibits a Schottky barrier. The Ohmic contact can be switched between the two sandwiching MoS2 monolayers by changing the polarity of an external gate field, thus enabling charge to be spatially injected into different MoS2 layers. The layer-selective Ohmic contact proposed here represents a layertronic generalization of metal/semiconductor contact, paving a way towards layertronic device application. △ Less

Submitted 25 June, 2025; v1 submitted 5 June, 2025; originally announced June 2025.

Comments: 14 pages, 5 figures

Unconventional tunnel magnetoresistance scaling with altermagnets

Authors: Zongmeng Yang, Xingyue Yang, Jianhua Wang, Rui Peng, Lee Ching Hua, Lay Kee Ang, Jing Lu, Yee Sin Ang, Shibo Fang

Abstract: In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel configuration. In this work, we reveal an anomalous scaling effect in altermagnetic tunnel junctions (AMTJs), where the TMR decreases anomalously with an increasing barrier… ▽ More In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel configuration. In this work, we reveal an anomalous scaling effect in altermagnetic tunnel junctions (AMTJs), where the TMR decreases anomalously with an increasing barrier thickness. The anomalous scaling originates from the overlapping spin-split branches form a transmission path that cannot be suppressed in the antiparallel state. Such phenomena is explained by adouble-barrier model and is further demonstrated using ab initio quantum transport simulations in 2D V2Te2O/Cr2Se2O/V2Te2O-based AMTJ, where the TMR anomalously decreases from 220% to 40% as the layer number of Cr2Se2O increases from 1 to 5. Our work identifies a peculiar unexpected transport characteristic of AMTJ, providing a fundamental limit on AMTJ device design and illustrating the potential optimal design of AMTJ at the ultrascaled monolayer limit. △ Less

Submitted 22 May, 2025; originally announced May 2025.

Revised Fowler-Dubridge model for photoelectron emission from two-dimensional materials

Authors: Luo Yi, Ang Y. S., Ang L. K

Abstract: We revise the Fowler-Dubridge (FB) model for photoelectron emission from two-dimensional (2D) materials to include the effects of reduced dimensionality, non-parabolic and anisotropic energy dispersion of 2D materials. Two different directions of electron emission are studied, namely vertical emission from the surface and lateral emission from the edge. Our analytical model reveals a universal tem… ▽ More We revise the Fowler-Dubridge (FB) model for photoelectron emission from two-dimensional (2D) materials to include the effects of reduced dimensionality, non-parabolic and anisotropic energy dispersion of 2D materials. Two different directions of electron emission are studied, namely vertical emission from the surface and lateral emission from the edge. Our analytical model reveals a universal temperature scaling of T\b{eta} with \b{eta} = 1 and \b{eta} = 3/2, respectively, for the surface and edge emission over a wide class of 2D materials, which are distinct from the traditional scaling of \b{eta} = 2 originally derived for the traditional bulk materials. Our comparison shows good agreement to two experiments of photo-electron emitted from graphene for both surface and edge emission. Our calculations also show the photoelectron emission is more pronounced than the coexisting thermionic emission for materials with low temperature and Fermi energy. This model provides helpful guidance in choosing proper combinations of light intensity, temperature range and type of 2D materials for the design of photoemitters, photodetectors and other optoelectronics △ Less

Submitted 11 September, 2023; originally announced September 2023.

Comments: 6 pages, 4 figures

Over-Barrier Photoelectron Emission with Rashba Spin-Orbit Coupling

Authors: Bi Hong Tiang, Yee Sin Ang, L. K. Ang

Abstract: We develop a theoretical model to calculate the quantum efficiency (QE) of photoelectron emission from materials with Rashba spin-orbit coupling (RSOC) effect. In the low temperature limit, an analytical scaling between QE and the RSOC strength is obtained as QE $\propto (\hbarω-W)^2+2E_R(\hbar ω-W) -E_R^2/3$, where $\hbarω$, $W$ and $E_R$ are the incident photon energy, work function and the RSOC… ▽ More We develop a theoretical model to calculate the quantum efficiency (QE) of photoelectron emission from materials with Rashba spin-orbit coupling (RSOC) effect. In the low temperature limit, an analytical scaling between QE and the RSOC strength is obtained as QE $\propto (\hbarω-W)^2+2E_R(\hbar ω-W) -E_R^2/3$, where $\hbarω$, $W$ and $E_R$ are the incident photon energy, work function and the RSOC parameter respectively. Intriguingly, the RSOC effect substantially improves the QE for strong RSOC materials. For example, the QE of Bi$_2$Se$_3$ and Bi/Si(111) increases, by 149\% and 122\%, respectively due to the presence of strong RSOC. By fitting to the photoelectron emission characteristics, the analytical scaling law can be employed to extract the RSOC strength, thus offering a useful tool to characterize the RSOC effect in materials. Importantly, when the traditional Fowler-Dubridge model is used, the extracted results may substantially deviate from the actual values by $\sim90\%$, thus highlighting the importance of employing our model to analyse the photoelectron emission especially for materials with strong RSOC. These findings provide a theoretical foundation for the design of photoemitters using Rashba spintronic materials. △ Less

Submitted 2 August, 2023; originally announced August 2023.

Comments: 6 pages, 3 figures

Analytical model of space charge current for a cylindrical porous trap-limited dielectric

Authors: Samra Kanwal, Chun Yun Kee, L. K. Ang

Abstract: In this study, analytical models for space charge limited current (SCLC) transport in a porous (or disordered) trap-limited dielectric are derived for both planar and cylindrical configuration. By considering the porous solid as a fractional object characterized by a parameter a less than 1, we formulate its fractional capacitance and determine the SCLC transport by using the transit time approach… ▽ More In this study, analytical models for space charge limited current (SCLC) transport in a porous (or disordered) trap-limited dielectric are derived for both planar and cylindrical configuration. By considering the porous solid as a fractional object characterized by a parameter a less than 1, we formulate its fractional capacitance and determine the SCLC transport by using the transit time approach. At a equal to 1, it will recover the well-known Mott Gurney (MG) law and Mark Helfrich (MH) law for trap-free and trap-limited cases, respectively. For cylindrical geometry, our findings show an analytical form that is not available from the traditional methods. We anticipate the proposed analytical model will serve as a useful tool for characterizing the current-voltage measurements in SCLC transport in dielectric breakdown and organic electronics, where spatial porosity of the materials is inevitable. The introduced fractional parameter a extracted from such characterization can facilitate the quantitative determination of the relationship between spatial porosity and charge mobility. △ Less

Submitted 30 July, 2023; originally announced July 2023.

Universal Model of Optical-Field Electron Tunneling from Two-Dimensional Materials

Authors: Yi Luo, Yee Sin Ang, L. K. Ang

Abstract: We develop analytical models of optical-field electron tunneling from the edge and surface of two-dimensional (2D) materials, including the effects of reduced dimensionality, non-parabolic energy dispersion, band anisotropy, quasi-time dependent tunneling and emission dynamics indueced by the laser field. We discover a universal scaling between the tunneling current density $J$ and the laser elect… ▽ More We develop analytical models of optical-field electron tunneling from the edge and surface of two-dimensional (2D) materials, including the effects of reduced dimensionality, non-parabolic energy dispersion, band anisotropy, quasi-time dependent tunneling and emission dynamics indueced by the laser field. We discover a universal scaling between the tunneling current density $J$ and the laser electric field $F$: In($J/|F|^β)\propto1/|F|$ with $β= 3 / 2$ in the edge emission and $β= 1$ in the vertical surface emission, which both are distinctive from the traditional Fowler-Nordheim (FN) model of $β= 2$. The current density exhibits an unexpected high-field saturation effect due to the reduced dimensionality of 2D materials, which is completely different from the space-charge saturation commonly observed in traditional bulk materials. Our results reveal the dc bias as an efficient method in modulating the optical-field tunneling sub-optical-cycle emission characteristics. Importantly, our model is in excellent agreement with a recent experiment on graphene. Our findings offer a theoretical foundation for the understanding of optical-field tunneling emission from the 2D material system, which is useful for the development of 2D-material based optoelectronics and vacuum nanoelectronics. △ Less

Submitted 20 March, 2023; originally announced March 2023.

Comments: 8 pages, 2 figures, 2 tables

Approaching intrinsic threshold breakdown voltage and ultra-high gain in graphite/InSe Schottky photodetector

Authors: Zhiyi Zhang, Bin Cheng, Jeremy Lim, Anyuan Gao, Lingyuan Lyu, Tianju Cao, Shuang Wang, Zhu-An Li, Qingyun Wu, L. K. Ang, Yee Sin Ang, Shi-Jun Liang, Feng Miao

Abstract: Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8… ▽ More Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8 V by raising the operating temperature, approaching the theoretical limit of 1.5E_g/e with E_g the band gap of semiconductor. We develop a two-dimensional impact ionization model and uncover that observation of high gain at low breakdown voltage arises from reduced dimensionality of electron-phonon (e-ph) scattering in the layered InSe flake. Our findings open up a promising avenue for developing novel weak-light detectors with low energy consumption and high sensitivity. △ Less

Submitted 11 November, 2022; originally announced November 2022.

Lanthanum Oxyhalide Monolayers: An Exceptional Dielectric Companion to Two-Dimensional Semiconductors

Authors: Zhuoling Jiang, Tong Su, Cherq Chua, L. K. Ang, Chun Zhang, Liemao Cao, Yee Sin Ang

Abstract: Two-dimensional (2D) layered dielectrics offers a compelling route towards the design of next-generation ultimately compact nanoelectronics. Motivated by recent high-throughput computational prediction of LaO$X$ ($X$ = Br, Cl) as an exceptional 2D dielectrics that significantly outperforms HfO$_2$ even in the monolyaer limit, we investigate the interface properties between LaOX and the archetypal… ▽ More Two-dimensional (2D) layered dielectrics offers a compelling route towards the design of next-generation ultimately compact nanoelectronics. Motivated by recent high-throughput computational prediction of LaO$X$ ($X$ = Br, Cl) as an exceptional 2D dielectrics that significantly outperforms HfO$_2$ even in the monolyaer limit, we investigate the interface properties between LaOX and the archetypal 2D semiconductors of monolayer transition metal dichacolgenides (TMDCs) $M$S$_2$ ($M$ = Mo, W) using first-principle density functional theory simulations. We show that LaO$X$ monolayers interacts weakly with $M$S$_2$ via van der Waals forces with negligible hybridization and interfacial charge transfer, thus conveniently preserving the electronic properties of 2D TMDCs upon contact formation. The conduction and valance band offsets of the interfaces exhibit a sizable value ranging from 0.7 to 1.4 eV, suggesting the capability of LaO$X$ as a gate dielectric materials. Based on Murphy-Good electron emission model, we demonstrate that LaOCl/MoS$_2$ is a versatile dielectric/semiconductor combinations that are compatible to both NMOS and PMOS applications with leakage current lower than $10^{-7}$ Acm$^{-2}$, while LaO$X$/WS$_2$ is generally compatible with PMOS application. The presence of an interfacial tunneling potential barrier at the van der Waals gap further provide an additional mechanism to suppress the leakage current. Our findings reveal the role LaO$X$ as an excellent dielectric companion to 2D TMDC and shall provide useful insights for leveraging the dielectric strength of LaO$X$ in the design of high-performance 2D nanodevices. △ Less

Submitted 2 November, 2022; v1 submitted 31 October, 2022; originally announced October 2022.

Comments: 10 pages, 4 Figures, 3 Tables

Cataloguing MoSi$_2$N$_4$ and WSi$_2$N$_4$ van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications

Authors: Che Chen Tho, Chenjiang Yu, Qin Tang, Qianqian Wang, Tong Su, Zhuoer Feng, Qingyun Wu, C. V. Nguyen, Wee-Liat Ong, Shi-Jun Liang, San-Dong Guo, Liemao Cao, Shengli Zhang, Shengyuan A. Yang, Lay Kee Ang, Guangzhao Wang, Yee Sin Ang

Abstract: Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain… ▽ More Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain an open theoretical and experimental quest. Here we show that the vdWH family composed of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers provides a compelling material platform for developing high-performance ultrathin excitonic solar cells and photonics devices. Using first-principle calculations, we construct and classify 51 types of MoSi$_2$N$_4$ and WSi$_2$N$_4$-based [(Mo,W)Si$_2$N$_4$] vdWHs composed of various metallic, semimetallic, semiconducting, insulating and topological 2D materials. Intriguingly, MoSi$_2$N$_4$/(InSe, WSe$_2$) are identified as Type-II vdWHs with exceptional excitonic solar cell power conversion efficiency reaching well over 20%, which are competitive to state-of-art silicon solar cells. The (Mo,W)Si$_2$N$_4$ vdWH family exhibits strong optical absorption in both the visible and ultraviolet regimes. Exceedingly large peak ultraviolet absorptions over 40%, approaching the maximum absorption limit of a free-standing 2D material, can be achieved in (Mo,W)Si$_2$N$_4$/$α_2$-(Mo,W)Ge$_2$P$_4$ vdWHs. Our findings unravel the enormous potential of (Mo,W)Si$_2$N$_4$ vdWHs in designing ultimately compact excitonic solar cell device technology. △ Less

Submitted 4 July, 2022; v1 submitted 23 June, 2022; originally announced June 2022.

Comments: 30 pages, 7 figures

Multiferroic van der Waals heterostructure FeCl$_2$/Sc$_2$CO$_2$: Nonvolatile electrically switchable electronic and spintronic properties

Authors: Liemao Cao, Xiaohui Deng, Guanghui Zhou, Shi-Jun Liang, Chuong V. Nguyen, L. K. Ang, Yee Sin Ang

Abstract: Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulat… ▽ More Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulations. We show that FeCl$_2$/Sc$_2$CO$_2$ heterostructure can be reversibly switched from semiconducting to half-metallic behavior by electrically modulating the ferroelectric polarization states of Sc$_2$CO$_2$. Intriguingly, the half-metallic phase exhibits a Type-III broken gap band alignment, which can be beneficial for tunnelling field-effect transistor application. We perform a quantum transport simulation, based on a \emph{proof-of-concept} two-terminal nanodevice, to demonstrate all-electric-controlled valving effects uniquely enabled by the nonvolatile ferroelectric switching of the heterostructure. These findings unravels the potential of FeCl$_2$/Sc$_2$CO$_2$ vdW heterostructures as a building block for designing a next generation of ultimately compact information processing, data storage and spintronics devices. △ Less

Submitted 29 March, 2022; originally announced March 2022.

Comments: 9 pages, 5 figures, accepted for publication in Physical Review B (2022)

Modeling of electric double layer at solid-liquid interface with spatial complexity

Authors: Cherq Chua, Chun Yun Kee, L. K. Ang, Yee Sin Ang

Abstract: Electrical double layer (EDL) is formed when an electrode is in contact with an electrolyte solution, and is widely used in biophysics, electrochemistry, polymer solution and energy storage. Poisson-Boltzmann (PB) coupled equations provides the foundational framework for modeling electrical potential and charge distribution at EDL. In this work, based on fractional calculus, we reformulate the PB… ▽ More Electrical double layer (EDL) is formed when an electrode is in contact with an electrolyte solution, and is widely used in biophysics, electrochemistry, polymer solution and energy storage. Poisson-Boltzmann (PB) coupled equations provides the foundational framework for modeling electrical potential and charge distribution at EDL. In this work, based on fractional calculus, we reformulate the PB equations (with and without steric effects) by introducing a phenomenal parameter $D$ (with a value between 0 and 1) to account for the spatial complexity due to impurities in EDL. The electrical potential and ion charge distribution for different $D$ are investigated. At $D$ = 1, the model recover the classical findings of ideal EDL. The electrical potential decays slowly at $D <$1, thus suggesting a wider region of saturated layer under fixed surface potential in the presence of spatial complexity. The fractional-space generalized model developed here provides a useful tool to account for spatial complexity effects which are not captured in the classic full-dimensional models. △ Less

Submitted 1 March, 2022; originally announced March 2022.

Comments: 7 pages 5 figures

SUTD-PRCM Dataset and Neural Architecture Search Approach for Complex Metasurface Design

Authors: Tianning Zhang, Yee Sin Ang, Erping Li, Chun Yun Kee, L. K. Ang

Abstract: Metasurfaces have received a lot of attentions recently due to their versatile capability in manipulating electromagnetic wave. Advanced designs to satisfy multiple objectives with non-linear constraints have motivated researchers in using machine learning (ML) techniques like deep learning (DL) for accelerated design of metasurfaces. For metasurfaces, it is difficult to make quantitative comparis… ▽ More Metasurfaces have received a lot of attentions recently due to their versatile capability in manipulating electromagnetic wave. Advanced designs to satisfy multiple objectives with non-linear constraints have motivated researchers in using machine learning (ML) techniques like deep learning (DL) for accelerated design of metasurfaces. For metasurfaces, it is difficult to make quantitative comparisons between different ML models without having a common and yet complex dataset used in many disciplines like image classification. Many studies were directed to a relatively constrained datasets that are limited to specified patterns or shapes in metasurfaces. In this paper, we present our SUTD polarized reflection of complex metasurfaces (SUTD-PRCM) dataset, which contains approximately 260,000 samples of complex metasurfaces created from electromagnetic simulation, and it has been used to benchmark our DL models. The metasurface patterns are divided into different classes to facilitate different degree of complexity, which involves identifying and exploiting the relationship between the patterns and the electromagnetic responses that can be compared in using different DL models. With the release of this SUTD-PRCM dataset, we hope that it will be useful for benchmarking existing or future DL models developed in the ML community. We also propose a classification problem that is less encountered and apply neural architecture search to have a preliminary understanding of potential modification to the neural architecture that will improve the prediction by DL models. Our finding shows that convolution stacking is not the dominant element of the neural architecture anymore, which implies that low-level features are preferred over the traditional deep hierarchical high-level features thus explains why deep convolutional neural network based models are not performing well in our dataset. △ Less

Submitted 24 February, 2022; originally announced March 2022.

Comments: 20 pages, 7 figures, 2 tables

Tunable electronic properties and band alignments of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO van der Waals heterostructures

Authors: Jin Quan Ng, Qingyun Wu, L. K. Ang, Yee Sin Ang

Abstract: Van de Waals heterostructures (VDWH) is an emerging strategy to engineer the electronic properties of two-dimensional (2D) material systems. Motivated by the recent discovery of MoSi$_2$N$_4$ - a synthetic septuple-layered 2D semiconductor with exceptional mechanical and electronic properties, we investigate the synergy of \ce{MoSi2N4} with wide band gap (WBG) 2D monolayers of GaN and ZnO using fi… ▽ More Van de Waals heterostructures (VDWH) is an emerging strategy to engineer the electronic properties of two-dimensional (2D) material systems. Motivated by the recent discovery of MoSi$_2$N$_4$ - a synthetic septuple-layered 2D semiconductor with exceptional mechanical and electronic properties, we investigate the synergy of \ce{MoSi2N4} with wide band gap (WBG) 2D monolayers of GaN and ZnO using first-principle calculations. We find that MoSi$_2$N$_4$/GaN is a direct band gap Type-I VDWH while MoSi$_2$N$_4$/ZnO is an indirect band gap Type-II VDWH. Intriguingly, by applying an electric field or mechanical strain along the out-of-plane direction, the band structures of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO can be substantially modified, exhibiting rich transitional behaviors, such as the Type-I-to-Type-II band alignment and the direct-to-indirect band gap transitions. These findings reveal the potentials of MoSi$_2$N$_4$-based WBG VDWH as a tunable hybrid materials with enormous design flexibility in ultracompact optoelectronic applications. △ Less

Submitted 24 February, 2022; v1 submitted 29 December, 2021; originally announced December 2021.

Comments: 8 pages, 4 figures

Quantum interference between fundamentally different processes is enabled by shaped input wavefunctions

Authors: J. Lim, Y. S. Ang, L. K. Ang, L. J. Wong

Abstract: We present a general framework for quantum interference (QI) between multiple, fundamentally different processes. Our framework reveals the importance of shaped input wavefunctions in enabling QI, and predicts unprecedented interactions between free electrons, bound electrons, and photons: (i) the vanishing of the zero-loss peak by destructive QI when a shaped electron wavepacket couples to light,… ▽ More We present a general framework for quantum interference (QI) between multiple, fundamentally different processes. Our framework reveals the importance of shaped input wavefunctions in enabling QI, and predicts unprecedented interactions between free electrons, bound electrons, and photons: (i) the vanishing of the zero-loss peak by destructive QI when a shaped electron wavepacket couples to light, under conditions where the electron's zero-loss peak otherwise dominates; (ii) QI between free electron and atomic (bound electron) spontaneous emission processes, which can be significant even when the free electron and atom are far apart, breaking the common notion that electron and atom must be close by to significantly affect each other's processes. Our work shows that emerging quantum waveshaping techniques unlock the door to greater versatility in light-matter interactions and other quantum processes in general. △ Less

Submitted 10 August, 2022; v1 submitted 26 November, 2021; originally announced November 2021.

Comments: 11 pages, 3 figures

Deep learning-based design of broadband GHz complex and random metasurfaces

Authors: Tianning Zhang, Chun Yun Kee, Yee Sin Ang, L. K. Ang

Abstract: We are interested to explore the limit in using deep learning (DL) to study the electromagnetic response for complex and random metasurfaces, without any specific applications in mind. For simplicity, we focus on a simple pure reflection problem of a broadband electromagnetic (EM) plane wave incident normally on such complex metasurfaces in the frequency regime of 2 to 12 GHz. In doing so, we crea… ▽ More We are interested to explore the limit in using deep learning (DL) to study the electromagnetic response for complex and random metasurfaces, without any specific applications in mind. For simplicity, we focus on a simple pure reflection problem of a broadband electromagnetic (EM) plane wave incident normally on such complex metasurfaces in the frequency regime of 2 to 12 GHz. In doing so, we create a deep learning (DL) based framework called metasurface design deep convolutional neural network (MSDCNN) for both the forward and inverse design of three different classes of complex metasurfaces: (a) Arbitrary connecting polygons, (b) Basic pattern combination, and (c) Fully random binary patterns. The performance of each metasurface is evaluated and cross-benchmarked. Dependent on the type of complex metasurfaces, sample size, and DL algorithms used, MSDCNN is able to provide good agreements and can be a faster design tool for complex metasurfaces as compared to the traditional full-wave electromagnetic simulation methods. However, no single universal deep convolutional neural network (DCNN) model can work well for all metasurface classes based on detailed statistical analysis (such as mean, variance, kurtosis, mean squared error). Our findings report important information on the advantages and limitation of current DL models in designing these ultimately complex metasurfaces. △ Less

Submitted 16 September, 2021; originally announced October 2021.

Comments: 32 pages, 14 figures, 1 table. Accepted in APL Photonics (2021)

Propagation-induced limits to high harmonic generation in 3D Dirac semimetals

Authors: Jeremy Lim, Yee Sin Ang, Lay Kee Ang, Liang Jie Wong

Abstract: 3D Dirac semimetals (DSMs) are promising materials for terahertz high harmonic generation (HHG). We show that 3D DSMs' high nonlinearity opens up a regime of nonlinear optics where extreme subwavelength current density features develop within nanoscale propagation distances of the driving field. Our results reveal orders-of-magnitude enhancement in HHG intensity with thicker 3D DSM films, and show… ▽ More 3D Dirac semimetals (DSMs) are promising materials for terahertz high harmonic generation (HHG). We show that 3D DSMs' high nonlinearity opens up a regime of nonlinear optics where extreme subwavelength current density features develop within nanoscale propagation distances of the driving field. Our results reveal orders-of-magnitude enhancement in HHG intensity with thicker 3D DSM films, and show that these subwavelength features fundamentally limit HHG enhancement beyond an optimal film thickness. This decrease in HHG intensity beyond the optimal thickness constitutes an effective propagation-induced dephasing. Our findings highlight the importance of propagation dynamics in nanofilms of extreme optical nonlinearity. △ Less

Submitted 17 June, 2021; originally announced June 2021.

Comments: 6 pages, 3 figures

Absence of Space-Charge-Limited Current in Unconventional Field Emission

Authors: Cherq Chua, Chun Yun Kee, Yee Sin Ang, L. K. Ang

Abstract: For field emission (FE), it is widely expected that its emitting current density $J$ will become space-charge-limited current (SCLC) due the built-up of charge in-transit within a gap spacing $D$ biased at sufficiently large voltage $V$. In this paper, we reveal a peculiar finding in which this expected two-stage transition (from FE to SCLC) is no longer valid for FE not obeying the traditional Fo… ▽ More For field emission (FE), it is widely expected that its emitting current density $J$ will become space-charge-limited current (SCLC) due the built-up of charge in-transit within a gap spacing $D$ biased at sufficiently large voltage $V$. In this paper, we reveal a peculiar finding in which this expected two-stage transition (from FE to SCLC) is no longer valid for FE not obeying the traditional Fowler-Nordheim (FN) law. %Such effect arises when the non-FN based emitters fails to inject sufficient %charge current at high voltage to sustain the SCLC. By employing a generalized FN scaling of $\ln\left(J/V^k\right) \propto - 1/V$, we show the existence of a \emph{critical exponent} $k_c \equiv 3/2$ where unusual behaviours occur for $k < k_c$: (a) Only FE at small $D$ (no transition to SCLC even at infinitely large $V$), and (b) Three-stage transition from FE first to SCLC then back to FE at large $D$. For any $k > k_c$, the conventional two-stage transition from FE to SCLC will always occur for all $D$, which also includes the conventional FN law at $k$ = 2. Using various unconventional FE models with $k \neq 2$, we specifically demonstrate these peculiar transitions. Under a normalized model, our findings uncover the rich interplay between the source-limited FE and bulk-limited SCLC over a wide range of operating conditions. △ Less

Submitted 21 May, 2021; originally announced May 2021.

Comments: 6 pages, 3 figures

Thermal-Field Electron Emission from Three-Dimensional Topological Semimetals

Authors: Wei Jie Chan, Yee Sin Ang, L. K. Ang

Abstract: A model is constructed to describe the thermal-field emission of electrons from a three-dimensional ($3$D) topological semimetal hosting Dirac/Weyl node(s). The traditional thermal-field electron emission model is generalised to accommodate the $3$D non-parabolic energy band structures in the topological Dirac/Weyl semimetals, such as cadmium arsenide (\ch{Cd3As2}), sodium bismuthide (\ch{Na3Bi}),… ▽ More A model is constructed to describe the thermal-field emission of electrons from a three-dimensional ($3$D) topological semimetal hosting Dirac/Weyl node(s). The traditional thermal-field electron emission model is generalised to accommodate the $3$D non-parabolic energy band structures in the topological Dirac/Weyl semimetals, such as cadmium arsenide (\ch{Cd3As2}), sodium bismuthide (\ch{Na3Bi}), tantalum arsenide (\ch{TaAs}) and tantalum phosphide (\ch{TaP}). Due to the unique Dirac cone band structure, an unusual dual-peak feature is observed in the total energy distribution (TED) spectrum. This non-trivial dual-peak feature, absent from traditional materials, plays a critical role in manipulating the TED spectrum and the magnitude of the emission current. At zero temperature limit, a new scaling law for pure field emission is derived and it is different from the well-known Fowler-Nordheim (FN) law. This model expands the recent understandings of electron emission studied for the Dirac $2$D materials into the $3$D regime, and thus offers a theoretical foundation for the exploration in using topological semimetals as novel electrodes. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Comments: 10 pages, 4 figures

Designing a Concentrated High-Efficiency Thermionic Solar Cell Enabled by Graphene Collector

Authors: Xin Zhang, Xiaohang Chen, Jinchan Chen, Lay Kee Ang, Yee Sin Ang

Abstract: We propose a concentrated thermionic emission solar cell design, which demonstrates a high solar-to-electricity energy conversion efficiency larger than 10\% under 600 sun, by harnessing the exceptional electrical, thermal and radiative properties of the graphene as a collector electrode. By constructing an analytical model that explicitly takes into account the non-Richardson behavior of the ther… ▽ More We propose a concentrated thermionic emission solar cell design, which demonstrates a high solar-to-electricity energy conversion efficiency larger than 10\% under 600 sun, by harnessing the exceptional electrical, thermal and radiative properties of the graphene as a collector electrode. By constructing an analytical model that explicitly takes into account the non-Richardson behavior of the thermionic emission current from graphene, space charge effect in vacuum gap, and the various irreversible energy losses within the subcomponents, we perform a detailed characterization on the conversion efficiency limit and electrical power output characteristics of the proposed system. We systematically model and compare the energy conversion efficiency of various configurations of graphene-graphene and graphene-diamond and diamond-diamond thermionic emitter, and show that utilizing diamond films as an emitter and graphene as a collector offers the highest maximum efficiency, thus revealing the important role of graphene in achieving high-performance thermionic emission solar cell. A maximum efficiency of 12.8\% under 800 sun has been revealed, which is significantly higher than several existing solid-state solar cell designs, such as the solar-driven thermoelectric and thermophotovoltaic converters. Our work thus opens up new avenues to advance the efficiency limit of thermionic solar energy conversion and the development of next-generation novel-nanomaterial-based solar energy harvesting technology. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Comments: 12 pages, 7 figures, 1 table

Semiconductor-to-metal transition in bilayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ with strain and electric field

Authors: Qingyun Wu, Liemao Cao, Yee Sin Ang, Lay Kee Ang

Abstract: With exceptional electrical and mechanical properties and at the same time air-stability, layered MoSi2N4 has recently draw great attention. However, band structure engineering via strain and electric field, which is vital for practical applications, has not yet been explored. In this work, we show that the biaxial strain and external electric field are effective ways for the band gap engineering… ▽ More With exceptional electrical and mechanical properties and at the same time air-stability, layered MoSi2N4 has recently draw great attention. However, band structure engineering via strain and electric field, which is vital for practical applications, has not yet been explored. In this work, we show that the biaxial strain and external electric field are effective ways for the band gap engineering of bilayer MoSi$_2$N$_4$ and WSi$_2$N$_4$. It is found that strain can lead to indirect band gap to direct band gap transition. On the other hand, electric field can result in semiconductor to metal transition. Our study provides insights into the band structure engineering of bilayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ and would pave the way for its future nanoelectronics and optoelectronics applications. △ Less

Submitted 16 January, 2021; originally announced January 2021.

Comments: 5 pages, 3 figures

Designing 24-hour Electrical Power Generator: Thermoradiative Device for Harvesting Energy from Sun and Outer Space

Authors: Xin Zhang, Guofeng Yang, Mengqi Yan, Lay Kee Ang, Yee Sin Ang

Abstract: Energy harvesting from sun and outer space using thermoradiative devices (TRD), despite being promising renewable energy sources, are limited only to daytime and nighttime period, respectively. A system with 24-hour continuous energy generation remains an open question thus far. Here, we propose a TRD-based power generator that harvests solar energy via concentrated solar irradiation during daytim… ▽ More Energy harvesting from sun and outer space using thermoradiative devices (TRD), despite being promising renewable energy sources, are limited only to daytime and nighttime period, respectively. A system with 24-hour continuous energy generation remains an open question thus far. Here, we propose a TRD-based power generator that harvests solar energy via concentrated solar irradiation during daytime and via thermal infrared emission towards the outer space at nighttime, thus achieving the much sought-after 24-hour electrical power generation. We develop a rigorous thermodynamical model to investigate the performance characteristics, parametric optimum design, and the role of various energy loss mechanisms. Our model predicts that the TRD-based system yields a peak efficiency of 12.6\% at daytime and a maximum power density of 10.8 Wm$^{-2}$ at nighttime, thus significantly outperforming the state-of-art record-setting thermoelectric generator. These findings reveal the potential of TRD towards 24-hour electricity generation and future renewable energy technology. △ Less

Submitted 14 January, 2021; originally announced January 2021.

Comments: 6 pages, 3 figures

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

Authors: Qianqian Wang, Liemao Cao, Shi-Jun Liang, Weikang Wu, Guangzhao Wang, Ching Hua Lee, Wee Liat Ong, Hui Ying Yang, Lay Kee Ang, Shengyuan A. Yang, Yee Sin Ang

Abstract: Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N… ▽ More Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ - a recently synthesized 2D material class with exceptional mechanical and electronic properties - exhibit strongly suppressed FLP and wide-range tunable SBH when contacted by metals. An exceptionally large SBH slope parameter of S=0.7 is obtained, which outperform the vast majority of other 2D semiconductors. Such surprising behavior arises from the unique morphology of MoSi$_2$N$_4$ and WSi$_2$N$_4$. The outlying Si-N layer forms a native atomic layer that protects the semiconducting inner-core from the perturbance of metal contacts, thus suppressing the FLP. Our findings reveal the potential of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as a novel 2D material platform for designing high-performance and energy-efficient 2D nanodevices. △ Less

Submitted 23 December, 2020; v1 submitted 14 December, 2020; originally announced December 2020.

Comments: 28 pages, 5 figures

Two-dimensional van der Waals electrical contact to monolayer MoSi$_2$N$_4$

Authors: Liemao Cao, Guanghui Zhou, Qianqian Wang, L. K. Ang, Yee Sin Ang

Abstract: Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi$_2$N$_4$, the physics of electrical contacts to MoSi$_2$N$_4$ remains largely unexplored thus far. In this work, we study the van der Waals heterostr… ▽ More Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi$_2$N$_4$, the physics of electrical contacts to MoSi$_2$N$_4$ remains largely unexplored thus far. In this work, we study the van der Waals heterostructures composed of MoSi$_2$N$_4$ contacted by graphene and NbS$_2$ monolayers using first-principle density functional theory calculations. We show that the MoSi$_2$N$_4$/NbS$_2$ contact exhibits an ultralow Schottky barrier height (SBH), which is beneficial for nanoelectronics applications. For MoSi$_2$N$_4$/graphene contact, the SBH can be modulated via interlayer distance or via external electric fields, thus opening up an opportunity for reconfigurable and tunable nanoelectronic devices. Our findings provide insights on the physics of 2D electrical contact to MoSi$_2$N$_4$, and shall offer a critical first step towards the design of high-performance electrical contacts to MoSi$_2$N$_4$-based 2D nanodevices. △ Less

Submitted 16 December, 2020; v1 submitted 12 October, 2020; originally announced October 2020.

Comments: 5 pages, 5 figures (accepted version, to appear in Applied Physics Letters)

Generalized scaling law for exciton binding energy in two-dimensional materials

Authors: S. Ahmad, M. Zubair, O. Jalil, M. Q. Mehmood, U. Younis, X. Liu, K. W. Ang, L. K. Ang

Abstract: Binding energy calculation in two-dimensional (2D) materials is crucial in determining their electronic and optical properties pertaining to enhanced Coulomb interactions between charge carriers due to quantum confinement and reduced dielectric screening. Based on full solutions of the Schrödinger equation in screened hydrogen model with a modified Coulomb potential ($1/r^{β-2}$), we present a gen… ▽ More Binding energy calculation in two-dimensional (2D) materials is crucial in determining their electronic and optical properties pertaining to enhanced Coulomb interactions between charge carriers due to quantum confinement and reduced dielectric screening. Based on full solutions of the Schrödinger equation in screened hydrogen model with a modified Coulomb potential ($1/r^{β-2}$), we present a generalized and analytical scaling law for exciton binding energy, $E_β = E_{0}\times \big (\,aβ^{b}+c\big )\, (μ/ε^{2})$, where $β$ is a fractional-dimension parameter accounted for the reduced dielectric screening. The model is able to provide accurate binding energies, benchmarked with the reported Bethe-Salpeter Equation (BSE) and experimental data, for 58 mono-layer 2D and 8 bulk materials respectively through $β$. For a given material, $β$ is varied from $β$ = 3 for bulk 3D materials to a value lying in the range 2.55$-$2.7 for 2D mono-layer materials. With $β_{\text{mean}}$ = 2.625, our model improves the average relative mean square error by 3 times in comparison to existing models. The results can be used for Coulomb engineering of exciton binding energies in the optimal design of 2D materials. △ Less

Submitted 23 May, 2020; originally announced May 2020.

Comments: Accepted (in-press) for publication in Physical Review Applied. Accepted article is available at this URL: https://journals.aps.org/prapplied/accepted/8607dYcbA3b1de6467a97ee13f63bee882eb2d391

Journal ref: Phys. Rev. Applied 13, 064062 (2020)

Broadband strong optical dichroism in topological Dirac semimetals with Fermi velocity anisotropy

Authors: J. Lim, K. J. A. Ooi, C. Zhang, L. K. Ang, Yee Sin Ang

Abstract: Prototypical three-dimensional (3D) topological Dirac semimetals (DSMs), such as Cd$_3$As$_2$ and Na$_3$Bi, contain electrons that obey a linear momentum-energy dispersion with different Fermi velocities along the three orthogonal momentum dimensions. Despite being extensively studied in recent years, the inherent \emph{Fermi velocity anisotropy} has often been neglected in the theoretical and num… ▽ More Prototypical three-dimensional (3D) topological Dirac semimetals (DSMs), such as Cd$_3$As$_2$ and Na$_3$Bi, contain electrons that obey a linear momentum-energy dispersion with different Fermi velocities along the three orthogonal momentum dimensions. Despite being extensively studied in recent years, the inherent \emph{Fermi velocity anisotropy} has often been neglected in the theoretical and numerical studies of 3D DSMs. Although this omission does not qualitatively alter the physics of light-driven massless quasiparticles in 3D DSMs, it does \emph{quantitatively} change the optical coefficients which can lead to nontrivial implications in terms of nanophotonics and plasmonics applications. Here we study the linear optical response of 3D DSMs for general Fermi velocity values along each direction. Although the signature conductivity-frequency scaling, $σ(ω) \propto ω$, of 3D Dirac fermion is well-protected from Fermi velocity anisotropy, the linear optical response exhibits strong linear dichroism as captured by the \emph{universal} extinction ratio scaling law, $Λ_{ij} = (v_i/v_j)^2$ (where $i\neq j$ denotes the three spatial coordinates $x,y,z$, and $v_i$ is the $i$-direction Fermi velocity), which is independent of frequency, temperature, doping, and carrier scattering lifetime. For Cd$_3$As$_2$ and Na$_3$Bi$_3$, an exceptionally strong extinction ratio larger than 15 and covering broad terahertz window is revealed. Our findings shed new light on the role of Fermi velocity anisotropy in the optical response of Dirac semimetals and open up novel polarization-sensitive functionalities, such as photodetection and light modulation. △ Less

Submitted 7 May, 2020; originally announced May 2020.

Comments: 8 pages, 3 figures

Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material

Authors: Liemao Cao, Guanghui Zhou, Qingyun Wu, Shengyuan A. Yang, Hui Ying Yang, Yee Sin Ang, L. K. Ang

Abstract: Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle… ▽ More Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle density functional theory and nonequilibrium Green's function simulation, we show that the electrical coupling between Na$_3$Bi bilayer thin film and graphene results in a notable interlayer charge transfer, thus inducing sizable $n$-type doping in the Na$_3$Bi/graphene heterostructures. In the case of MoS$_2$ and WS$_2$ monolayers, the lateral Schottky transport barrier is significantly lower than many commonly studied bulk metals, thus unraveling Na$_3$Bi bilayer as a high-efficiency electrical contact material for 2D semiconductors. These findings opens up an avenue of utilizing topological semimetal thin film as electrical contact to 2D materials, and further expands the family of 2D heterostructure devices into the realm of topological materials. △ Less

Submitted 13 May, 2020; v1 submitted 21 April, 2020; originally announced April 2020.

Comments: 8 pages, 6 figures. Authors' accepted version

Journal ref: Phys. Rev. Appl. 13, 054030 (2020)

Universal model for electron thermal-field emission from two-dimensional semimetals

Authors: L. K. Ang, Yee Sin Ang, Ching Hua Lee

Abstract: We present the theory of out-of-plane (or vertical) electron thermal-field emission from 2D semimetals. We show that the current-voltage-temperature characteristic is well-captured by a universal scaling relation applicable for broad classes of 2D semimetals, including graphene and its few-layer, nodal point semimetal, Dirac semimetal at the verge of topological phase transition and nodal line sem… ▽ More We present the theory of out-of-plane (or vertical) electron thermal-field emission from 2D semimetals. We show that the current-voltage-temperature characteristic is well-captured by a universal scaling relation applicable for broad classes of 2D semimetals, including graphene and its few-layer, nodal point semimetal, Dirac semimetal at the verge of topological phase transition and nodal line semimetal. Here an important consequence of the universal emission behavior is revealed: in contrast to the common expectation that band topology shall manifest differently in the physical observables, band topologies in two spatial dimension are indistinguishable from each others and bear no special signature in the electron emission characteristics. Our findings represent the quantum extension of the universal semiclassical thermionic emission scaling law in 2D materials, and provide the theoretical foundations for the understanding of electron emission from cathode and charge interface transport for the design of 2D-material-based vacuum nanoelectronics. △ Less

Submitted 17 April, 2023; v1 submitted 31 March, 2020; originally announced March 2020.

Comments: 9 pages, 2 figures, 2 tables

Journal ref: Phys. Plasma 30 (2003) 033103

Efficient generation of extreme terahertz harmonics in 3D Dirac semimetals

Authors: J. Lim, Y. S. Ang, F. J. G. de Abajó, I. Kaminer, L. K. Ang, L. J. Wong

Abstract: Frequency multiplication of terahertz signals on a solid state platform is highly sought-after for the next generation of high-speed electronics and the creation of frequency combs. Solutions to efficiently generate extreme harmonics (up to the $31^{\rm{st}}$ harmonic and beyond) of a terahertz signal with modest input intensities, however, remain elusive. Using fully nonperturbative simulations a… ▽ More Frequency multiplication of terahertz signals on a solid state platform is highly sought-after for the next generation of high-speed electronics and the creation of frequency combs. Solutions to efficiently generate extreme harmonics (up to the $31^{\rm{st}}$ harmonic and beyond) of a terahertz signal with modest input intensities, however, remain elusive. Using fully nonperturbative simulations and complementary analytical theory, we show that 3D Dirac semimetals (DSMs) have enormous potential as compact sources of extreme terahertz harmonics, achieving energy conversion efficiencies beyond $10^{-5}$ at the $31^{\rm{st}}$ harmonic with input intensities on the order of $10$ MW/cm$^2$, over $10^5$ times lower than in conventional THz high harmonic generation systems. Our theory also reveals a fundamental feature in the nonlinear optics of 3D DSMs: a distinctive regime where higher-order optical nonlinearity vanishes, arising as a direct result of the extra dimensionality in 3D DSMs compared to 2D DSMs. Our findings should pave the way to the development of efficient platforms for high-frequency terahertz light sources and optoelectronics based on 3D DSMs. △ Less

Submitted 25 March, 2020; originally announced March 2020.

Comments: 10 pages, 3 figures

Journal ref: Phys. Rev. Research 2, 043252 (2020)

Generalized high-energy thermionic electron injection at graphene interface

Authors: Yee Sin Ang, Yueyi Chen, Chuan Tan, L. K. Ang

Abstract: Graphene thermionic electron emission across high-interface-barrier involves energetic electrons residing far away from the Dirac point where the Dirac cone approximation of the band structure breaks down. Here we construct a full-band model beyond the simple Dirac cone approximation for the thermionic injection of high-energy electrons in graphene. We show that the thermionic emission model based… ▽ More Graphene thermionic electron emission across high-interface-barrier involves energetic electrons residing far away from the Dirac point where the Dirac cone approximation of the band structure breaks down. Here we construct a full-band model beyond the simple Dirac cone approximation for the thermionic injection of high-energy electrons in graphene. We show that the thermionic emission model based on the Dirac cone approximation is valid only in the graphene/semiconductor Schottky interface operating near room temperature, but breaks down in the cases involving high-energy electrons, such as graphene/vacuum interface or heterojunction in the presence of photon absorption, where the full-band model is required to account for the band structure nonlinearity at high electron energy. We identify a critical barrier height, $Φ_B^{(\text{c})} \approx 3.5$ eV, beyond which the Dirac cone approximation crosses over from underestimation to overestimation. In the high-temperature thermionic emission regime at graphene/vacuum interface, the Dirac cone approximation severely overestimates the electrical and heat current densities by more than 50\% compared to the more accurate full-band model. The large discrepancies between the two models are demonstrated using a graphene-based thermionic cooler. These findings reveal the fallacy of Dirac cone approximation in the thermionic injection of high-energy electrons in graphene. The full-band model developed here can be readily generalized to other 2D materials, and shall provide an improved theoretical avenue for the accurate analysis, modeling and design of graphene-based thermionic energy devices. △ Less

Submitted 30 July, 2019; v1 submitted 17 July, 2019; originally announced July 2019.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. Appl. 12, -14-57 (2019)

Surface exciton polaritons: a promising mechanism for sensing applications

Authors: Yi Xu, Lin Wu, L. K. Ang

Abstract: The possibility of constructing a surface exciton polariton (SEP) based sensor at room temperature is explored. The proposed SEP sensor is based on the Kretschmann-Raether configuration of conventional surface plasmon resonance (SPR) sensor, where the metal thin film was replaced by the J-aggregate cyanine dye film. The excitation of SEP results in a strong electric field at the interface of TDBC… ▽ More The possibility of constructing a surface exciton polariton (SEP) based sensor at room temperature is explored. The proposed SEP sensor is based on the Kretschmann-Raether configuration of conventional surface plasmon resonance (SPR) sensor, where the metal thin film was replaced by the J-aggregate cyanine dye film. The excitation of SEP results in a strong electric field at the interface of TDBC and analyte, and exponentially decaying into the analyte, which is sensitive to the refractive index variations of analyte. The sensitivity of 118.1818 $^\circ/\text{RIU}$ (140.4286 $^\circ/\text{RIU}$) was achieved for the proposed SEP sensor within the refractive index range 1.0-1.001 (1.33-1.36) of gaseous analyte (aqueous solutions), which is about 2 (3.5) times higher than that of conventional gold-based SPR sensor. The significant superiority of the SEP sensor in sensitivity revealing SEP as a new promising mechanism for sensing applications. △ Less

Submitted 17 December, 2018; originally announced December 2018.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. Applied 12, 024029 (2019)

Fractional Fresnel coefficients for optical absorption in femtosecond laser-induced rough metal surfaces

Authors: Muhammad Zubair, Yee Sin Ang, Kelvin J. A. Ooi, L. K. Ang

Abstract: The surface morphology of metal influences its optical absorptivity. Recent experiments have demonstrated that the femtosecond laser induced surface structures on metals could be dynamically controlled by the fluence of laser and the number of pulses. In this paper, we formulate an analytical model to calculate the optical absorption of a rough metallic surface by modeling the roughness as a fract… ▽ More The surface morphology of metal influences its optical absorptivity. Recent experiments have demonstrated that the femtosecond laser induced surface structures on metals could be dynamically controlled by the fluence of laser and the number of pulses. In this paper, we formulate an analytical model to calculate the optical absorption of a rough metallic surface by modeling the roughness as a fractal slab. For a given experimental image of the surface roughness, we characterize the roughness with a fractal parameter by using box-counting method. With this parameter as input, we calculate the absorption of 800 nm laser pulse impinging on gold, copper and platinum, and the calculated results show excellent agreements. In terms of physics, our model can be viewed as a fractional version of the Fresnel coefficients, and it will be useful for designing suitable surface structures to tune the light absorption on metals from purely reflective to highly absorptive based on different applications. △ Less

Submitted 6 October, 2018; originally announced October 2018.

Comments: Journal of Applied Physics (accepted, in-press) 2018

Thickness dependence of space-charge-limited current in spatially disordered organic semiconductors

Authors: Muhammad Zubair, Yee Sin Ang, Lay Kee Ang

Abstract: Charge transport properties in organic semiconductors are determined by two kinds of microscopic disorders, namely energetic disorder related to the distribution of localized states and the spatial disorder related to the morphological features of the material. From a semi-classical picture, the charge transport properties are crucially determined by both the carrier mobility and the electrostatic… ▽ More Charge transport properties in organic semiconductors are determined by two kinds of microscopic disorders, namely energetic disorder related to the distribution of localized states and the spatial disorder related to the morphological features of the material. From a semi-classical picture, the charge transport properties are crucially determined by both the carrier mobility and the electrostatic field distribution in the material. Although the effect of disorders on carrier mobility has been widely studied, how electrostatic field distribution is distorted by the presence of disorders and its effect on charge transport remain unanswered. In this paper, we present a modified space-charge-limited current (SCLC) model for spatially disordered organic semiconductors based on the fractional-dimensional electrostatic framework. We show that the thickness dependence of SCLC is related to the spatial disorder in organic semiconductors. For trap-free transport, the SCLC exhibits a modified thickness scaling of $J\propto L^{-3α}$, where the fractional-dimension parameter $α$ accounts for the spatial disorder in organic semiconductors. The trap-limited and field-dependent mobility are also shown to obey an $α$-dependent thickness scaling. The modified SCLC model shows a good agreement with several experiments on spatially disordered organic semiconductors. By applying this model to the experimental data, the standard charge transport parameters can be deduced with better accuracy than by using existing models. △ Less

Submitted 27 May, 2018; originally announced May 2018.

Comments: (Accepted, In-Press), 9 pages, 8 figures, IEEE Transactions on Electron Devices 2018

Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials

Authors: Yee Sin Ang, Hui Ying Yang, L. K. Ang

Abstract: We identify a new universality in the carrier transport of two-dimensional(2D)-material-based Schottky heterostructures. We show that the reversed saturation current ($\mathcal{J}$) scales universally with temperature ($T$) as $ \log(\mathcal{J}/T^β) \propto -1/T$, with $β= 3/2$ for lateral Schottky heterostructures and $β= 1$ for vertical Schottky heterostructures, over a wide range of 2D systems… ▽ More We identify a new universality in the carrier transport of two-dimensional(2D)-material-based Schottky heterostructures. We show that the reversed saturation current ($\mathcal{J}$) scales universally with temperature ($T$) as $ \log(\mathcal{J}/T^β) \propto -1/T$, with $β= 3/2$ for lateral Schottky heterostructures and $β= 1$ for vertical Schottky heterostructures, over a wide range of 2D systems including nonrelativistic electron gas, Rashba spintronic system, single and few-layer graphene, transition metal dichalcogenides and thin-films of topological solids. Such universalities originate from the strong coupling between the thermionic process and the in-plane carrier dynamics. Our model resolves some of the conflicting results from prior works and is in agreement with recent experiments. The universal scaling laws signal the breakdown of $β=2$ scaling in the classic diode equation widely-used over the past 60 years. Our findings shall provide a simple analytical scaling for the extraction of the Schottky barrier height in 2D-material-based heterostructure, thus paving way for both fundamental understanding of nanoscale interface physics and applied device engineering. △ Less

Submitted 19 July, 2018; v1 submitted 5 March, 2018; originally announced March 2018.

Comments: 6 pages, 2 figures, revised version v3 with new title

Journal ref: Phys. Rev. Lett. 121, 056802 (2018)

Fractional Fowler-Nordheim Law for Field Emission from Rough Surface with Nonparabolic Energy Dispersion

Authors: M. Zubair, Yee Sin Ang, L. K. Ang

Abstract: The theories of field electron emission from perfectly planar and smooth canonical surfaces are well understood, but they are not suitable for describing emission from rough, irregular surfaces arising in modern nanoscale electron sources. Moreover, the existing models rely on Sommerfeld's free-electron theory for the description of electronic distribution which is not a valid assumption for moder… ▽ More The theories of field electron emission from perfectly planar and smooth canonical surfaces are well understood, but they are not suitable for describing emission from rough, irregular surfaces arising in modern nanoscale electron sources. Moreover, the existing models rely on Sommerfeld's free-electron theory for the description of electronic distribution which is not a valid assumption for modern materials with nonparabolic energy dispersion. In this paper, we derive analytically a generalized Fowler-Nordheim (FN) type equation that takes into account the reduced space-dimensionality seen by the quantum mechanically tunneling electron at a rough, irregular emission surface. We also consider the effects of non-parabolic energy dispersion on field-emission from narrow-gap semiconductors and few-layer graphene using Kane's band model. The traditional FN equation is shown to be a limiting case of our model in the limit of a perfectly flat surface of a material with parabolic dispersion. The fractional-dimension parameter used in this model can be experimentally calculated from appropriate current-voltage data plot. By applying this model to experimental data, the standard field-emission parameters can be deduced with better accuracy than by using the conventional FN equation. △ Less

Submitted 20 December, 2017; v1 submitted 16 November, 2017; originally announced November 2017.

Comments: 8 pages, 4 figures

Journal ref: IEEE TRANSACTIONS ON ELECTRON DEVICES, SI: VACUUM ELECTRONICS, 2018

Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate

Authors: Yee Sin Ang, Shengyuan A. Yang, C. Zhang, Zhongshui Ma, L. K. Ang

Abstract: Despite much anticipation of valleytronics as a candidate to replace the ageing CMOS-based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all-electrically in an electrostatic setting. Here we propose a class of all-electric-controlled valley filter, valve and logic gate based on the valley-contrasting transport in a merging… ▽ More Despite much anticipation of valleytronics as a candidate to replace the ageing CMOS-based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all-electrically in an electrostatic setting. Here we propose a class of all-electric-controlled valley filter, valve and logic gate based on the valley-contrasting transport in a merging Dirac cones system. The central mechanism of these devices lies on the pseudospin-assisted quantum tunneling which effectively quenches the transport of one valley when its pseudospin configuration mismatches that of a gate-controlled scattering region. The valley polarization can be abruptly switched into different states and remains stable over semi-infinite gate-voltage windows. Colossal tunneling valley-pseudo-magnetoresistance ratio of over 10,000\% can be achieved in a valley-valve setup. We further propose a valleytronic-based logic gate capable of covering all 16 types of two-input Boolean logics. Remarkably, the valley degree of freedom can be harnessed to resurrect logical-reversibility in two-input universal Boolean gate. The (2+1) polarization states -- two distinct valleys plus a null polarization -- re-establish one-to-one input-to-output mapping, a crucial requirement for logical-reversibility, and significantly reduce the complexity of reversible circuits due to the built-in nature of valley degree of freedom. Our results suggest that the synergy of valleytronics and digital logics may provide new paradigms for valleytronic-based information processing and reversible computing. △ Less

Submitted 28 November, 2017; v1 submitted 15 November, 2017; originally announced November 2017.

Comments: 15 pages, 12 figures, accepted for publication in Physical Review B

Journal ref: Phys. Rev. B 96, 245410 (2017)

Generalized Fowler-Nordheim field-induced vertical electron emission model for two-dimensional materials

Authors: Yee Sin Ang, M. Zubair, K. J. A. Ooi, L. K. Ang

Abstract: Current theoretical description of field-induced electron emission remains mostly bounded by the classic Fowler-Nordheim (FN) framework developed nearly one century ago. For the emerging class of two-dimensional (2D) materials, many basic assumptions of FN model become invalid due to their reduced dimensionality and exotic electronic properties. In this work, we develop analytical and semi-analyti… ▽ More Current theoretical description of field-induced electron emission remains mostly bounded by the classic Fowler-Nordheim (FN) framework developed nearly one century ago. For the emerging class of two-dimensional (2D) materials, many basic assumptions of FN model become invalid due to their reduced dimensionality and exotic electronic properties. In this work, we develop analytical and semi-analytical models of field-induced vertical electron emission from the surface of 2D materials by explicitly taking into account the reduced dimensionality, non-parabolic energy spectrum, non-conserving in-plane electron momentum, finite-temperature and space-charge-limited effects. We show that the traditional FN law is no longer valid for 2D materials. The modified vertical field emission model developed here provides better agreement with experimental results. Intriguingly, a new high-field regime of \emph{saturated surface field emission} emerges due to the reduced dimensionality of 2D materials. A remarkable consequence of this saturated field emission effect is the absence of space-charge-limited current normally expected at high field in three-dimensional bulk material. △ Less

Submitted 15 November, 2017; originally announced November 2017.

Comments: 17 pages, 8 figures

Shortcut to adiabatic light transfer in waveguide couplers with a sign flip in the phase mismatch

Authors: Wei Huang, L. K. Ang, Elica Kyoseva

Abstract: Employing counterdiabatic shortcut to adiabaticity (STA), we design shorter and robust achromatic two- and three- waveguide couplers. We assume that the phase mismatch between the waveguides has a sign flip at maximum coupling, while the coupling between the waveguides has a smooth spatial shape. We show that the presented coupler operates as a complete achromatic optical switch for two coupled wa… ▽ More Employing counterdiabatic shortcut to adiabaticity (STA), we design shorter and robust achromatic two- and three- waveguide couplers. We assume that the phase mismatch between the waveguides has a sign flip at maximum coupling, while the coupling between the waveguides has a smooth spatial shape. We show that the presented coupler operates as a complete achromatic optical switch for two coupled waveguides and as an equal superposition beam splitter for three coupled waveguides. An important feature of our devices is that they do not require larger coupling strength as compared to previous designs, which make them easier to realize in an experimental setting. Additionally, we show that the presented waveguide couplers operate at a shorter device length and are robust against variations in the coupling strength and the phase mismatch. △ Less

Submitted 15 November, 2017; originally announced November 2017.

Comments: 6 pages, 6 figures. J. Phys. D: Appl. Phys (2019)

Design of an optimized $\text{MoS}_2$-based highly sensitive near-infrared surface plasmon resonance imaging biosensor

Authors: Yi Xu, Lin Wu, Lay Kee Ang

Abstract: A surface plasmon resonance imaging biosensor based on $\text{MoS}_2$ deposited on Aluminium substrate is designed for high imaging sensitivity and detection accuracy. The proposed biosensor exhibits better performance than graphene-based biosensor in the near-infrared regime. A high imaging sensitivity of more than 970 $\text{RIU}^{-1}$ is obtained at the wavelength of 1540 nm. The effect of alum… ▽ More A surface plasmon resonance imaging biosensor based on $\text{MoS}_2$ deposited on Aluminium substrate is designed for high imaging sensitivity and detection accuracy. The proposed biosensor exhibits better performance than graphene-based biosensor in the near-infrared regime. A high imaging sensitivity of more than 970 $\text{RIU}^{-1}$ is obtained at the wavelength of 1540 nm. The effect of aluminium thickness, number of $\text{MoS}_2$ layers and the refractive index of sensing layer are investigated to obtain an optimized design for high sensor performance. In addition, the sensor performance comparison of $\text{MoS}_2$ and other two-dimensional transition metal dichalcogenide materials based biosensor in the near-infrared regime are also presented. The designed $\text{MoS}_2$ mediated surface plasmon resonance imaging biosensor could provide potential applications in surface plasmon resonance imaging detection of multiple biomolecular interactions simultaneously. △ Less

Submitted 25 October, 2017; originally announced October 2017.

Comments: 11 pages, 8 figures

Journal ref: IEEE Journal of Selected Topics in Quantum Electronics 2019

Ultrasensitive and highly accurate long-range surface plasmon resonance biosensors based on two-dimensional transition metal dichalcogenides

Authors: Yi Xu, Chang-Yu Hsieh, Lin Wu, L. K. Ang

Abstract: Two-dimensional transition metal dichalcogenides (TMDCs), as promising alternative plasmonics supporting materials to graphene, exhibit potential applications in sensing. Here, we propose an ultrasensitive, accurate long-range surface plasmon resonance (LRSPR) imaging biosensor with two-dimensional TMDC layers, which shows higher detection accuracy than that of conventional SPR biosensor. It is fo… ▽ More Two-dimensional transition metal dichalcogenides (TMDCs), as promising alternative plasmonics supporting materials to graphene, exhibit potential applications in sensing. Here, we propose an ultrasensitive, accurate long-range surface plasmon resonance (LRSPR) imaging biosensor with two-dimensional TMDC layers, which shows higher detection accuracy than that of conventional SPR biosensor. It is found that the imaging sensitivity of the proposed LRSPR biosensor can be enhanced by the integration of TMDC layers, which is different from the previous graphene-based LRSPR or SPR imaging sensor, whose imaging sensitivity usually decreases with the number of graphene layers. The sensitivity enhancement or degradation effect for the proposed chalcogenide-cytop-gold-TMDCs based biosensor depends on the thickness of gold thin film and cytop layer. Imaging sensitivity of more than 4000 $\text{RIU}^{-1}$ can be obtained with a high detection accuracy of more than 120 $\text{deg}^{-1}$. We expect that the proposed TMDCs mediated LRSPR imaging sensor could provide potential applications in chemical sensing and biosensing for a highly sensitive and accurate simultaneous detection of multiple biomolecular interactions. △ Less

Submitted 26 September, 2017; originally announced September 2017.

Comments: 18 pages, 9 figures

Journal ref: Journal of Physics D: Applied Physics 2019

Adiabatic control of surface plasmon-polaritons in a 3-layers graphene curved configuration

Authors: Wei Huang, Shi-Jun Liang, Elica Kyoseva, Lay Kee Ang

Abstract: In this paper, we utilize coupled mode theory (CMT) to model the coupling between surface plasmon-polaritons (SPPs) between multiple graphene sheets. By using the Stimulated Raman Adiabatic Passage (STIRAP) Quantum Control Technique, we propose a novel directional coupler based on SPPs evolution in three layers of graphene sheets in some curved configuration. Our calculated results show that the S… ▽ More In this paper, we utilize coupled mode theory (CMT) to model the coupling between surface plasmon-polaritons (SPPs) between multiple graphene sheets. By using the Stimulated Raman Adiabatic Passage (STIRAP) Quantum Control Technique, we propose a novel directional coupler based on SPPs evolution in three layers of graphene sheets in some curved configuration. Our calculated results show that the SPP can be transferred efficiently from the input graphene sheet to the output graphene sheet, and the coupling is also robust that it is not sensitive to the length of the device. △ Less

Submitted 16 November, 2017; v1 submitted 31 July, 2017; originally announced August 2017.

Comments: 4 figures

Journal ref: Carbon, 127, Pages 187-192 (2018)

A new coupling mechanism between two graphene electron waveguides for ultrafast switching

Authors: Wei Huang, Shi-Jun Liang, Elica Kyoseva, Lay Kee Ang

Abstract: We propose a novel ultrafast electronic switching device based on dual-graphene electron waveguides, in analogy to the optical dual-channel waveguide device. The design utilizes the principle of coherent quantum mechanical tunneling of Rabi oscillations between the two graphene electron waveguides. Based on a modified coupled mode theory, we construct a theoretical model to analyse the device char… ▽ More We propose a novel ultrafast electronic switching device based on dual-graphene electron waveguides, in analogy to the optical dual-channel waveguide device. The design utilizes the principle of coherent quantum mechanical tunneling of Rabi oscillations between the two graphene electron waveguides. Based on a modified coupled mode theory, we construct a theoretical model to analyse the device characteristics, and predict that the swtiching speed is faster than 1 ps. Due to the long mean free path of electrons in graphene at room temperature, the proposed design avoids the limitation of low temperature operation required in the normal semiconductor quantum-well structure. The layout of the our design is similar to that of a standard CMOS transistor that should be readily fabricated with current state-of-art nanotechnology. △ Less

Submitted 26 March, 2019; v1 submitted 13 February, 2017; originally announced February 2017.

Comments: 6 pages, 4 figures

Journal ref: Semicond. Sci. Technol. 33 035014 (2018)

Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation

Authors: Kelvin J. A. Ooi, Hong Son Chu, Chang Yu Hsieh, Dawn T. H. Tan, Lay Kee Ang

Abstract: Inelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly efficient material for tunneling excitation of plasmons because of its narrow plasmon linewidths, strong emission, and large tunability in the midinfrared wavel… ▽ More Inelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly efficient material for tunneling excitation of plasmons because of its narrow plasmon linewidths, strong emission, and large tunability in the midinfrared wavelength regime. Compared to gold and silver, the enhancement can be up to 10 times for similar wavelengths and up to 5 orders at their respective plasmon operating wavelengths. Tunneling excitation of graphene plasmons promises an efficient technology for on-chip electrical generation and manipulation of plasmons for graphene-based optoelectronics and nanophotonic integrated circuits. △ Less

Submitted 27 August, 2015; originally announced August 2015.

Comments: 12 pages, 7 figures

Journal ref: Physical Review Applied 3(5), 054001 (2015)

Efficiencies of Aloof-Scattered Electron Beam Excitation of Metal and Graphene Plasmons

Authors: Kelvin J. A. Ooi, Wee Shing Koh, Hong Son Chu, Dawn T. H. Tan, L. K. Ang

Abstract: We assessed the efficiencies of surface plasmon excitation by an aloof-scattered electron beam on metals and graphene. Graphene is shown to exhibit high energy transfer efficiencies at very low electron kinetic energy requirements. We show that the exceptional performance of graphene is due to its unique plasmon dispersion, low electronic density and thin-film structure. The potential applications… ▽ More We assessed the efficiencies of surface plasmon excitation by an aloof-scattered electron beam on metals and graphene. Graphene is shown to exhibit high energy transfer efficiencies at very low electron kinetic energy requirements. We show that the exceptional performance of graphene is due to its unique plasmon dispersion, low electronic density and thin-film structure. The potential applications of these aloof-scattered graphene plasmons are discussed in aspects of coherent radiation. △ Less

Submitted 3 June, 2015; originally announced June 2015.

Comments: 6 pages, 7 figures

Journal ref: IEEE Transactions of Plasma Science 43(4), 951-956 (2015)

Waveguide engineering of graphene's nonlinearity

Authors: Kelvin J. A. Ooi, Lay Kee Ang, Dawn T. H. Tan

Abstract: Graphene has recently been shown to possess giant nonlinearity; however, the utility of this nonlinearity is limited due to high losses and small interaction volume. We show that by performing waveguide engineering to graphene's nonlinearity, we are able to dramatically increase the nonlinear parameter and decrease the switching optical power to sub-watt levels. Our design makes use of the hybrid… ▽ More Graphene has recently been shown to possess giant nonlinearity; however, the utility of this nonlinearity is limited due to high losses and small interaction volume. We show that by performing waveguide engineering to graphene's nonlinearity, we are able to dramatically increase the nonlinear parameter and decrease the switching optical power to sub-watt levels. Our design makes use of the hybrid plasmonic waveguide and careful manipulation of graphene's refractive index by tuning its Fermi level. The ability to tailor the nonlinear parameter in graphene based waveguides via the Fermi level provides a paradigm of nonlinear optics devices to be realized. △ Less

Submitted 18 November, 2014; originally announced November 2014.

Comments: 7 pages, 5 figures

Journal ref: Appl. Phys. Lett. 105(11), 111110 (2014)

Electro-optical graphene plasmonic logic gates

Authors: Kelvin J. A. Ooi, Hong Son Chu, Ping Bai, Lay Kee Ang

Abstract: The versatile control of graphene's plasmonic modes via an external gate-voltage inspires us to design efficient electro-optical graphene plasmonic logic gates at the midinfrared wavelengths. We show that these devices are superior to the conventional optical logic gates because the former possess cut-off states and interferometric effects. Moreover, the designed six basic logic gates (i.e., NOR/A… ▽ More The versatile control of graphene's plasmonic modes via an external gate-voltage inspires us to design efficient electro-optical graphene plasmonic logic gates at the midinfrared wavelengths. We show that these devices are superior to the conventional optical logic gates because the former possess cut-off states and interferometric effects. Moreover, the designed six basic logic gates (i.e., NOR/AND, NAND/OR, XNOR/XOR) achieved not only ultracompact size lengths of less than λ/28 with respect to the operating wavelength of 10 μm, but also a minimum extinction ratio as high as 15 dB. These graphene plasmonic logic gates are potential building blocks for future nanoscale midinfrared photonic integrated circuits. △ Less

Submitted 6 May, 2014; originally announced May 2014.

Comments: 4 pages, 5 figures

Journal ref: Optics Letters, Vol. 39, Issue 6, pp. 1629-1632 (2014)

Design of a Monopole Antenna Based Resonant Nanocavity for Detection of Optical Power from Hybrid Plasmonic Waveguides

Authors: Kelvin J. A. Ooi, Ping Bai, Ming Xia Gu, Lay Kee Ang

Abstract: A novel plasmonic waveguide-coupled nanocavity with a monopole antenna is proposed to localize the optical power from a hybrid plasmonic waveguide and subsequently convert it into electrical current. The nanocavity is designed as a Fabry-Pérot waveguide resonator, while the monopole antenna is made of a metallic nanorod directly mounted onto the metallic part of the waveguide terminal which acts a… ▽ More A novel plasmonic waveguide-coupled nanocavity with a monopole antenna is proposed to localize the optical power from a hybrid plasmonic waveguide and subsequently convert it into electrical current. The nanocavity is designed as a Fabry-Pérot waveguide resonator, while the monopole antenna is made of a metallic nanorod directly mounted onto the metallic part of the waveguide terminal which acts as the conducting ground. The nanocavity coincides with the antenna feed sandwiched in between the antenna and the ground. Maximum power from the waveguide can be coupled into, and absorbed in the nanocavity by means of the field resonance in the antenna as well as in the nanocavity. Simulation results show that 42% optical power from the waveguide can be absorbed in a germanium filled nanocavity with a nanoscale volume of 220x150x60nm$^3$. The design may find applications in nanoscale photo-detection, subwavelength light focusing and manipulating, as well as sensing. △ Less

Submitted 30 December, 2013; originally announced January 2014.

Comments: 10 pages, 5 figures

Journal ref: Opt. Express 19(18), 17075-17085 (2011)

Mid-infrared Active Graphene Nanoribbon Plasmonic Waveguide Devices

Authors: Kelvin J. A. Ooi, Hong Son Chu, Lay Kee Ang, Ping Bai

Abstract: Doped graphene emerges as a strong contender for active plasmonic material in the mid-infrared wavelengths due to the versatile external-control of its permittivity-function and also its highly-compressed graphene surface plasmon (GSP) wavelength. In this paper, we design active plasmonic waveguide devices based on electrical-modulation of doped graphene nanoribbons (GNRs) on a voltage-gated inhom… ▽ More Doped graphene emerges as a strong contender for active plasmonic material in the mid-infrared wavelengths due to the versatile external-control of its permittivity-function and also its highly-compressed graphene surface plasmon (GSP) wavelength. In this paper, we design active plasmonic waveguide devices based on electrical-modulation of doped graphene nanoribbons (GNRs) on a voltage-gated inhomogeneous dielectric layer. We first develop figure-of-merit (FoM) formulae to characterize the performance of passive and active graphene nanoribbon waveguides. Based on the FoMs, we choose optimal GNRs to build a plasmonic shutter, which consists of a GNR placed on top of an inhomogeneous SiO$_2$ substrate supported by a Si nanopillar. Simulation studies show that for a simple 50nm-long plasmonic shutter, the modulation contrast can exceed 30dB. The plasmonic shutter is further extended to build a 4-port active power splitter and an 8-port active network, both based on GNR cross-junction waveguides. For the active power splitter, the GSP power transmission at each waveguide arm can be independently controlled by an applied gate-voltage with high modulation contrast and nearly-equal power-splitting proportions. From the construct of the 8-port active network, we see that it is possible to scale up the GNR cross-junction waveguides into large and complex active waveguide networks, showing great potential in an exciting new area of mid-infrared graphene plasmonic integrated nanocircuits. △ Less

Submitted 30 December, 2013; originally announced December 2013.

Comments: 12 pages, 6 figures

Journal ref: J. Opt. Soc. Am. B 30(12), 3111-3116 (2013)

Ultracompact Vanadium Dioxide Dual-Mode Plasmonic Waveguide Electroabsorption Modulator

Authors: Kelvin J. A. Ooi, Ping Bai, Hong Son Chu, Lay Kee Ang

Abstract: Subwavelength modulators play an indispensable role in integrated photonic-electronic circuits. Due to weak light-matter interactions, it is always a challenge to develop a modulator with a nanometer scale footprint, low switching energy, low insertion loss and large modulation depth. In this paper, we propose the design of a vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulat… ▽ More Subwavelength modulators play an indispensable role in integrated photonic-electronic circuits. Due to weak light-matter interactions, it is always a challenge to develop a modulator with a nanometer scale footprint, low switching energy, low insertion loss and large modulation depth. In this paper, we propose the design of a vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator using a metal-insulator-VO$_2$-insulator-metal (MIVIM) waveguide platform. By varying the index of vanadium dioxide, the modulator can route plasmonic waves through the low-loss dielectric insulator layer during the "on" state and high-loss VO$_2$ layer during the "off" state, thereby significantly reducing the insertion loss while maintaining a large modulation depth. This ultracompact waveguide modulator, for example, can achieve a large modulation depth of ~10dB with an active size of only 200x50x220nm$^3$ (or ~λ$^3$/1700), requiring a drive-voltage of ~4.6V. This high performance plasmonic modulator could potentially be one of the keys towards fully-integrated plasmonic nanocircuits in the next-generation chip technology. △ Less

Submitted 30 December, 2013; originally announced December 2013.

Comments: 10 pages, 4 figures

Journal ref: Nanophotonics 2(1), 13-19 (2013)

Plasmonic coupled-cavity system for enhancement of surface plasmon localization in plasmonic detectors

Authors: Kelvin J. A. Ooi, Ping Bai, Ming Xia Gu, Lay Kee Ang

Abstract: A plasmonic coupled-cavity system, which consists of a quarter-wave coupler cavity, a resonant Fabry-Perot detector nanocavity, and an off-resonant reflector cavity, is used to enhance the localization of surface plasmons in a plasmonic detector. The coupler cavity is designed based on transmission line theory and wavelength scaling rules in the optical regime, while the reflector cavity is derive… ▽ More A plasmonic coupled-cavity system, which consists of a quarter-wave coupler cavity, a resonant Fabry-Perot detector nanocavity, and an off-resonant reflector cavity, is used to enhance the localization of surface plasmons in a plasmonic detector. The coupler cavity is designed based on transmission line theory and wavelength scaling rules in the optical regime, while the reflector cavity is derived from off-resonant resonator structures to attenuate transmission of plasmonic waves. We observed strong coupling of the cavities in simulation results, with an 86% improvement of surface plasmon localization achieved. The plasmonic coupled-cavity system may find useful applications in areas of nanoscale photodetectors, sensors, and an assortment of plasmonic-circuit devices. △ Less

Submitted 30 December, 2013; originally announced December 2013.

Comments: 9 pages, 5 figures

Journal ref: Nanotechnology 23(27), 275201 (2012)