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Direct activation of PMS by highly dispersed amorphous CoOx clusters in anatase TiO2 nanosheets for efficient oxidation of biomass-derived alcohols
Authors:
Zhiwei Jiang,
Zhiyue Zhao,
Xin Li,
Huaiguang Li,
Hector F. Garces,
Mahmoud Amer,
Kai Yan
Abstract:
Developing a green and cost-effective catalytic system for the selective oxidation of biomass-derived alcohols is vital for the sustainable synthesis of fine chemicals. Herein, highly dispersed subnanometric amorphous CoOx clusters in anatase TiO2 nanosheets (Co-TiO2) fabricated by green solvent CO2 assisted approach could directly activate peroxymonosulfate (PMS) for the highly selective oxidatio…
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Developing a green and cost-effective catalytic system for the selective oxidation of biomass-derived alcohols is vital for the sustainable synthesis of fine chemicals. Herein, highly dispersed subnanometric amorphous CoOx clusters in anatase TiO2 nanosheets (Co-TiO2) fabricated by green solvent CO2 assisted approach could directly activate peroxymonosulfate (PMS) for the highly selective oxidation of various biomass-derived alcohols. Advanced characterizations (e.g., EXAFS, EPR, AC HAADF-STEM) reveal that a strong interaction of CoOx clusters and the anatase TiO2 support exist in Co-TiO2 and Co atom in Co-TiO2 is mainly consisted of Co2+ and Co3+. The Co-TiO2 catalyst offers superior catalytic performance in the conversion of six types of alcohols (e.g., benzyl alcohol (BAL), 5-hydroxymethylfurfural (HMF)) with high selectivity to produce corresponding aldehydes. Highly dispersed CoOx clusters and the interaction between CoOx clusters and TiO2 support contribute to the superior performance. Mechanism studies show that SO4 radicals play the dominant role in the selective oxidation of model reactant BAL and 1O2 participates in the non-radical pathway. DFT calculations are well matched with experiment and decipher that the strong interaction between CoOx clusters and TiO2 support promotes the formation of SO4 and SO5.
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Submitted 25 March, 2024;
originally announced March 2024.
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SU-8 meta phenylenediamine conjugated thin film for temperature sensing
Authors:
Hani Barhum,
Muhammad A. Atrash,
Inga Brice,
Toms Salgals,
Madhat Matar,
Mariam Amer,
Ziad Abdeen,
Janis Alnis,
Vjaceslavs Bobrovs,
Abdul Muhsen Abdeen,
Pavel Ginzburg
Abstract:
Polymers, demonstrating distinctive optical properties alongside facile and mastered fabrication methods, have become increasingly important platforms for realizing a variety of nanophotonic devices. Enhancing these materials with additional functions might expand their range of multidisciplinary applications. Here, we demonstrate the temperature sensing potential of SU8-Phenylenediamine (SU8-mPD)…
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Polymers, demonstrating distinctive optical properties alongside facile and mastered fabrication methods, have become increasingly important platforms for realizing a variety of nanophotonic devices. Enhancing these materials with additional functions might expand their range of multidisciplinary applications. Here, we demonstrate the temperature sensing potential of SU8-Phenylenediamine (SU8-mPD), which was produced by epoxy amination of the SU-8 polymer. The SU8-mPD properties were examined through a series of molecular structural techniques and optical methods. Thin layers have demonstrated optical emission and absorption in the visible range around 420 and 520 nm respectively alongside a strong thermal responsivity, characterized by the 18 ppm\cdotK-1 expansion coefficient. A photonic chip, comprising a thin 5-10 μm SU8-mPD layer, encased between parallel silver and/or gold thin film mirrors, has been fabricated. This assembly, when pumped by an external light source, generates a pronounced fluorescent signal which is superimposed with the Fabry-Pérot (FP) resonant response. The chip undergoes mechanical deformation in response to temperature changes, thereby shifting the FP resonance and encoding temperature information into the fluorescence output spectrum. The time response of the device was estimated to be below 500 msec opening a new avenue for optical sensing using SU8-based polymers. Thermoresponsive resonant structures, encompassing strong tunable fluorescent properties, can further enrich the functionalities of nanophotonic polymer-based platforms.
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Submitted 6 February, 2024;
originally announced February 2024.
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Unlocking High Performance, Ultra-Low Power Van der Waals Transistors: Towards Back-End-of-Line In-Sensor Machine Vision Applications
Authors:
Olaiyan Alolaiyan,
Shahad Albwardi,
Sarah Alsaggaf,
Thamer Tabbakh,
Frank W. DelRio,
Moh. R. Amer
Abstract:
Recent reports on machine learning (ML) and machine vision (MV) devices have demonstrated the potentials of 2D materials and devices. Yet, scalable 2D devices are being challenged by contact resistance and Fermi Level Pinning (FLP), power consumption, and low-cost CMOS compatible lithography processes. To enable CMOS+2D, it is essential to find a proper lithography strategy that can fulfill these…
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Recent reports on machine learning (ML) and machine vision (MV) devices have demonstrated the potentials of 2D materials and devices. Yet, scalable 2D devices are being challenged by contact resistance and Fermi Level Pinning (FLP), power consumption, and low-cost CMOS compatible lithography processes. To enable CMOS+2D, it is essential to find a proper lithography strategy that can fulfill these requirements. Here, we explore modified van der Waals (vdW) deposition lithography and demonstrate a relatively new class of van-der-Waals-Field-Effect-Transistors (vdW-FETs) based on 2D materials. This lithography strategy enables us to unlock high performance devices evident by high current on-off ratio (Ion/Ioff), high turn-on current density (Ion), and weak Fermi Level Pinning (FLP). We utilize this approach to demonstrate a gate-tunable near-ideal diode using MoS2/WSe2 heterojunction with an ideality factor of ~1.65 and current rectification of 102. We finally demonstrate a highly sensitive, scalable, and ultra-low power phototransistor using MoS2/ WSe2 vdW-FET for Back-End-of-Line (BEOL) integration. Our phototransistor exhibits the highest gate-tunable photoresponsivity achieved to date for white light detection with ultra-low power dissipation, enabling ultra-sensitive, ultra-fast, and efficient optoelectronic applications such as in-sensor neuromorphic machine vision. Our approach shows the great potential of modified vdW deposition lithography for back-end-of-line CMOS+2D applications.
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Submitted 13 December, 2023;
originally announced December 2023.
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Exploring Layer Thinning of Exfoliated \b{eta}-Tellurene and Room Temperature Photoluminescence with Large Exciton Binding Energy Revealed in TeO2
Authors:
Ghadeer Aljalham,
Sarah Alsaggaf,
Shahad Albawardi,
Thamer Tabbakh,
Frank W. DelRio,
Moh. R. Amer
Abstract:
Due to its tunable band gap, anisotropic behavior, and superior thermoelectric properties, device applications using layered tellurene (Te) are becoming attractive. Here, we report a thinning technique for exfoliated tellurene nanosheets using thermal annealing in an oxygen environment. We characterize different thinning parameters including temperature and annealing time. Based on our measurement…
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Due to its tunable band gap, anisotropic behavior, and superior thermoelectric properties, device applications using layered tellurene (Te) are becoming attractive. Here, we report a thinning technique for exfoliated tellurene nanosheets using thermal annealing in an oxygen environment. We characterize different thinning parameters including temperature and annealing time. Based on our measurements, we show that controlled layer thinning occurs in the narrow temperature range of 325 oC to 350 oC. We also show a reliable method to form \b{eta}-tellurene oxide (\b{eta}- TeO2), which is an emerging wide band gap semiconductor with promising electronic and optoelectronic properties. This wide band gap semiconductor exhibits a broad photoluminescence (PL) spectrum with multiple peaks covering the range 1.76 eV to 2.08 eV. This PL emission coupled with Raman spectra are strong evidence of the formation of 2D \b{eta}- TeO2. We discuss the results obtained and the mechanisms of Te thinning and \b{eta}-TeO2 formation at different temperature regimes. We also discuss the optical band gap of \b{eta}-TeO2 and show the existence of pronounced excitonic effects evident by the large exciton binding energy in this 2D \b{eta}-TeO2 system that reach 1.54 eV to 1.62 eV for bulk to monolayer, respectively. Our work can be utilized to have better control over Te nanosheet thickness. It also sheds light on the formation of well-controlled \b{eta}-TeO2 layered semiconductor for electronic and optoelectronic applications.
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Submitted 6 October, 2023; v1 submitted 28 February, 2023;
originally announced February 2023.
