-
X-ray speed reading with the MCRC: prototype success and next generation upgrades
Authors:
Peter Orel,
Abigail Y. Pan,
Sven Herrmann,
Tanmoy Chattopadhyay,
Glenn Morris,
Haley Stueber,
Steven W. Allen,
Daniel Wilkins,
Gregory Prigozhin,
Beverly LaMarr,
Richard Foster,
Andrew Malonis,
Marshall W. Bautz,
Michael J. Cooper,
Kevan Donlon
Abstract:
The Advanced X-ray Imaging Satellite (AXIS) is a NASA probe class mission concept designed to deliver arcsecond resolution with an effective area ten times that of Chandra (at launch). The AXIS focal plane features an MIT Lincoln Laboratory (MIT-LL) X-ray charge-coupled device (CCD) detector working in conjunction with an application specific integrated circuit (ASIC), denoted the Multi-Channel Re…
▽ More
The Advanced X-ray Imaging Satellite (AXIS) is a NASA probe class mission concept designed to deliver arcsecond resolution with an effective area ten times that of Chandra (at launch). The AXIS focal plane features an MIT Lincoln Laboratory (MIT-LL) X-ray charge-coupled device (CCD) detector working in conjunction with an application specific integrated circuit (ASIC), denoted the Multi-Channel Readout Chip (MCRC). While this readout ASIC targets the AXIS mission, it is applicable to a range of potential X-ray missions with comparable readout requirements. Designed by the X-ray astronomy and Observational Cosmology (XOC) group at Stanford University, the MCRC ASIC prototype (MCRC-V1.0) uses a 350 nm technology node and provides 8 channels of high speed, low noise, low power consumption readout electronics. Each channel implements a current source to bias the detector output driver, a preamplifier to provide gain, and an output buffer to interface directly to an analog-to-digital (ADC) converter. The MCRC-V1 ASIC exhibits comparable performance to our best discrete electronics implementations, but with ten times less power consumption and a fraction of the footprint area. In a total ionizing dose (TID) test, the chip demonstrated a radiation hardness equal or greater to 25 krad, confirming the suitability of the process technology and layout techniques used in its design. The next iteration of the ASIC (MCRC-V2) will expand the channel count and extend the interfaces to external circuits, advancing its readiness as a readout-on-a-chip solution for next generation X-ray CCD-like detectors. This paper summarizes our most recent characterization efforts, including the TID radiation campaign and results from the first operation of the MCRC ASIC in combination with a representative MIT-LL CCD.
△ Less
Submitted 23 July, 2024;
originally announced July 2024.
-
The XOC X-ray Beamline: Probing Colder, Quieter, and Softer
Authors:
Haley R. Stueber,
Tanmoy Chattopadhyay,
Sven C. Herrmann,
Peter Orel,
Tsion Gebre,
Aanand Joshi,
Steven W. Allen,
Glenn Morris,
Artem Poliszczuk
Abstract:
Future strategic X-ray satellite telescopes, such as the probe-class Advanced X-ray Imaging Satellite (AXIS), will require excellent soft energy response in their imaging detectors to enable maximum discovery potential. In order to characterize Charge-Coupled Device (CCD) and Single Electron Sensitive Read Output (SiSeRO) detectors in the soft X-ray region, the X-ray Astronomy and Observational Co…
▽ More
Future strategic X-ray satellite telescopes, such as the probe-class Advanced X-ray Imaging Satellite (AXIS), will require excellent soft energy response in their imaging detectors to enable maximum discovery potential. In order to characterize Charge-Coupled Device (CCD) and Single Electron Sensitive Read Output (SiSeRO) detectors in the soft X-ray region, the X-ray Astronomy and Observational Cosmology (XOC) group at Stanford has developed, assembled, and commissioned a 2.5-meter-long X-ray beamline test system. The beamline is designed to efficiently produce monoenergetic X-ray fluorescence lines in the 0.3-10 keV energy range and achieve detector temperatures as low as 173 K. We present design and simulation details of the beamline, and discuss the vacuum, cooling, and X-ray fluorescence performance achieved. As a workhorse for future detector characterization at Stanford, the XOC beamline will support detector development for a broad range of X-ray astronomy instruments.
△ Less
Submitted 23 July, 2024;
originally announced July 2024.
-
Demonstrating sub-electron noise performance in Single electron Sensitive Readout (SiSeRO) devices
Authors:
Tanmoy Chattopadhyay,
Sven Herrmann,
Peter Orel,
Kevan Donlon,
Steven W. Allen,
Marshall W. Bautz,
Brianna Cantrall,
Michael Cooper,
Beverly LaMarr,
Chris Leitz,
Eric Miller,
R. Glenn Morris,
Abigail Y. Pan,
Gregory Prigozhin,
Ilya Prigozhin,
Haley R. Stueber,
Daniel R. Wilkins
Abstract:
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD) readout circuitry. The SiSeRO, developed by MIT Lincoln Laboratory, uses a p-MOSFET transistor with a depleted back-gate region under the transistor channel; as charg…
▽ More
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD) readout circuitry. The SiSeRO, developed by MIT Lincoln Laboratory, uses a p-MOSFET transistor with a depleted back-gate region under the transistor channel; as charge is transferred into the back gate region, the transistor current is modulated. With our first generation SiSeRO devices, we previously achieved a responsivity of around 800 pA per electron, an equivalent noise charge (ENC) of 4.5 electrons root mean square (RMS), and a full width at half maximum (FWHM) spectral resolution of 130 eV at 5.9 keV, at a readout speed of 625 Kpixel/s and for a detector temperature of 250 K. Importantly, since the charge signal remains unaffected by the SiSeRO readout process, we have also been able to implement Repetitive Non-Destructive Readout (RNDR), achieving an improved ENC performance. In this paper, we demonstrate sub-electron noise sensitivity with these devices, utilizing an enhanced test setup optimized for RNDR measurements, with excellent temperature control, improved readout circuitry, and advanced digital filtering techniques. We are currently fabricating new SiSeRO detectors with more sensitive and RNDR-optimized amplifier designs, which will help mature the SiSeRO technology in the future and eventually lead to the pathway to develop active pixel sensor (APS) arrays using sensitive SiSeRO amplifiers on each pixel. Active pixel devices with sub-electron sensitivity and fast readout present an exciting option for next generation, large area astronomical X-ray telescopes requiring fast, low-noise megapixel imagers.
△ Less
Submitted 23 July, 2024;
originally announced July 2024.
-
Improved noise performance from the next-generation buried-channel p-Mosfet SiSeROs
Authors:
Tanmoy Chattopadhyay,
Sven Herrmann,
Matthew Kaplan,
Peter Orel,
Kevan Donlon,
Gregory Prigozhin,
R. Glenn Morris,
Michael Cooper,
Andrew Malonis,
Steven W. Allen,
Marshall W. Bautz,
Chris Leitz
Abstract:
The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we…
▽ More
The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. In our earlier work, we characterized a number of first prototype SiSeROs with the MOSFET transistor channels at the surface layer. An equivalent noise charge (ENC) of around 15 electrons root mean square (RMS) was obtained. In this work, we examine the first buried-channel SiSeRO. We have achieved substantially improved noise performance of around 4.5 electrons root mean square (RMS) and a full width half maximum (FWHM) energy resolution of 132 eV at 5.9 keV, for a readout speed of 625 kpixel/s. We also discuss how digital filtering techniques can be used to further improve the SiSeRO noise performance. Additional measurements and device simulations will be essential to further mature the SiSeRO technology. This new device class presents an exciting new technology for the next-generation astronomical X-ray telescopes requiring fast, low-noise, radiation-hard megapixel imagers with moderate spectroscopic resolution.
△ Less
Submitted 27 April, 2023; v1 submitted 11 February, 2023;
originally announced February 2023.
-
Single electron Sensitive Readout (SiSeRO) X-ray detectors: Technological progress and characterization
Authors:
Tanmoy Chattopadhyay,
Sven Herrmann,
Peter Orel,
R. G. Morris,
Daniel R. Wilkins,
Steven W. Allen,
Gregory Prigozhin,
Beverly LaMarr,
Andrew Malonis,
Richard Foster,
Marshall W. Bautz,
Kevan Donlon,
Michael Cooper,
Christopher Leitz
Abstract:
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have…
▽ More
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. Characterization was performed for a number of prototype sensors with different device architectures, e.g. location of the internal gate, MOSFET polysilicon gate structure, and location of the trough in the internal gate with respect to the source and drain of the MOSFET (the trough is introduced to confine the charge in the internal gate). Using a buried-channel SiSeRO, we have achieved a charge/current conversion gain of >700 pA per electron, an equivalent noise charge (ENC) of around 6 electrons root mean square (RMS), and a full width half maximum (FWHM) of approximately 140 eV at 5.9 keV at a readout speed of 625 Kpixel/s. In this paper, we discuss the SiSeRO working principle, the readout module developed at Stanford, and the characterization test results of the SiSeRO prototypes. We also discuss the potential to implement Repetitive Non-Destructive Readout (RNDR) with these devices and the preliminary results which can in principle yield sub-electron ENC performance. Additional measurements and detailed device simulations will be essential to mature the SiSeRO technology. However, this new device class presents an exciting technology for next generation astronomical X-ray telescopes requiring fast, low-noise, radiation hard megapixel imagers with moderate spectroscopic resolution.
△ Less
Submitted 1 August, 2022;
originally announced August 2022.
-
First results on SiSeRO (Single electron Sensitive Read Out) devices -- a new X-ray detector for scientific instrumentation
Authors:
Tanmoy Chattopadhyay,
Sven Herrmann,
Barry Burke,
Kevan Donlon,
Gregory Prigozhin,
R. Glenn Morris,
Peter Orel,
Michael Cooper,
Andrew Malonis,
Dan Wilkins,
Vyshnavi Suntharalingam,
Steven W. Allen,
Marshall Bautz,
Chris Leitz
Abstract:
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a depleted internal gate beneath the p-MOSFET. Charge transferred to the internal gate modulates the source-drain current of the transistor. We have developed a drain cu…
▽ More
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a depleted internal gate beneath the p-MOSFET. Charge transferred to the internal gate modulates the source-drain current of the transistor. We have developed a drain current readout module to characterize the detector. The prototype sensor achieves a charge/current conversion gain of 700 pA per electron, an equivalent noise charge (ENC) of 15 electrons (e-) root mean square (RMS), and a full width half maximum (FWHM) of 230 eV at 5.9 keV. In this paper, we discuss the SiSeRO working principle, the readout module developed at Stanford, and the first characterization test results of the SiSeRO prototypes. While at present only a proof-of-concept experiment, in the near future we plan to use next generation sensors with improved noise performance and an enhanced readout module. In particular, we are developing a readout module enabling Repetitive Non-Destructive Readout (RNDR) of the charge, which can in principle yield sub-electron ENC performance. With these developments, we eventually plan to build a matrix of SiSeRO amplifiers to develop an active pixel sensor with an on-chip ASIC-based readout system. Such a system, with fast readout speeds and sub-electron noise, could be effectively utilized in scientific applications requiring fast and low-noise spectro-imagers.
△ Less
Submitted 9 December, 2021;
originally announced December 2021.
-
Suppressed effective viscosity in the bulk intergalactic plasma
Authors:
I. Zhuravleva,
E. Churazov,
A. A. Schekochihin,
S. W. Allen,
A. Vikhlinin,
N. Werner
Abstract:
Transport properties, such as viscosity and thermal conduction, of the hot intergalactic plasma in clusters of galaxies, are largely unknown. While for laboratory plasmas these characteristics are derived from the gas density and temperature, such recipes can be fundamentally different for the intergalactic plasma due to a low rate of particle collisions and a weak magnetic field. In numerical sim…
▽ More
Transport properties, such as viscosity and thermal conduction, of the hot intergalactic plasma in clusters of galaxies, are largely unknown. While for laboratory plasmas these characteristics are derived from the gas density and temperature, such recipes can be fundamentally different for the intergalactic plasma due to a low rate of particle collisions and a weak magnetic field. In numerical simulations, one often cuts through these unknowns by modeling these plasmas as hydrodynamic fluids, even though local, non-hydrodynamic features observed in clusters contradict this assumption. Using deep Chandra observations of the Coma Cluster, we probe gas fluctuations in intergalactic medium down to spatial scales where the transport processes should prominently manifest themselves - at least if hydrodynamic models with pure Coulomb collision rates were indeed adequate. We find that they do not, implying that the effective isotropic viscosity is orders of magnitude smaller than naively expected. This indicates an enhanced collision rate in the plasma due to particle scattering off microfluctuations caused by plasma instabilities, or that the transport processes are anisotropic with respect to local magnetic field. For that reason, numerical models with high Reynolds number appear more consistent with observations. Our results also demonstrate that observations of turbulence in clusters are becoming a branch of astrophysics that can sharpen theoretical views on such plasmas.
△ Less
Submitted 14 June, 2019;
originally announced June 2019.
