229 nm UV LEDs using p-type silicon for increased hole injection
Authors:
Dong Liu,
Sang June Cho,
Jeongpil Park,
Jung-Hun Seo,
Rafael Dalmau,
Deyin Zhao,
Kwangeun Kim,
Munho Kim,
In-Kyu Lee,
John D. Albrecht,
Weidong Zhou,
Baxter Moody,
Zhenqiang Ma
Abstract:
Ultraviolet (UV) light emission at 229 nm wavelength from diode structures based on AlN/Al0.77Ga0.23N quantum wells and using p-type Si to significantly increase hole injection was reported. Both electrical and optical characteristics were measured. Owing to the large concentration of holes from p-Si and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2…
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Ultraviolet (UV) light emission at 229 nm wavelength from diode structures based on AlN/Al0.77Ga0.23N quantum wells and using p-type Si to significantly increase hole injection was reported. Both electrical and optical characteristics were measured. Owing to the large concentration of holes from p-Si and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 uW was obtained with corresponding external quantum efficiency of 0.027%. This study demonstrates that by adopting p-type Si nanomembrane contacts as hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.
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Submitted 13 August, 2017;
originally announced August 2017.
UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection
Authors:
Sang June Cho,
Dong Liu,
Jung-Hun Seo,
Rafael Dalmau,
Kwangeun Kim,
Jeongpil Park,
Deyin Zhao,
Xin Yin,
Yei Hwan Jung,
In-Kyu Lee,
Munho Kim,
Xudong Wang,
John D. Albrecht,
Weidong Zhou Baxter Moody,
Zhenqiang Ma
Abstract:
As UV LEDs are explored at shorter wavelengths (< 280 nm) into the UVC spectral range, the crystalline quality of epitaxial AlGaN films with high Al compositions and inefficient hole injection from p-type AlGaN severely limit the LED performance and development. In this work, we report on 237 nm light emission with a record light output power of 265 uW from AlN/Al0.72Ga028N multiple quantum well U…
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As UV LEDs are explored at shorter wavelengths (< 280 nm) into the UVC spectral range, the crystalline quality of epitaxial AlGaN films with high Al compositions and inefficient hole injection from p-type AlGaN severely limit the LED performance and development. In this work, we report on 237 nm light emission with a record light output power of 265 uW from AlN/Al0.72Ga028N multiple quantum well UVC LEDs using bulk AlN substrates and p-type silicon nanomembrane contact layers for significantly improved AlGaN film quality and hole injection, respectively. No intensity degradation or efficiency droop was observed up to a current density of 245 A/cm2, which is attributed to the low dislocation density within AlGaN films, the large concentration of holes from p-Si, and efficient hole-transport to the active region. Additionally, the emission peak at 237 nm is dominant across the electroluminescence spectrum with no significant parasitic emissions observed. This study demonstrates the feasibility of using p-Si as a hole injector for UVC LEDs, which can be extended to even shorter wavelengths where hole injection from chemically doped AlGaN layers is not feasible.
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Submitted 13 July, 2017;
originally announced July 2017.
