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Robust asynchronous optical sampling terahertz spectroscopy using commercially available free-running lasers
Authors:
Mayuri Nakagawa,
Natsuki Kanda,
Hidekazu Nakamae,
Hidefumi Akiyama,
Ryusuke Matsunaga
Abstract:
This study presents asynchronous optical sampling (ASOPS) terahertz spectroscopy using commercially available Ti:Sapphire lasers without stabilizing repetition frequency. Our postprocessing algorithm using the multiplied repetition frequency difference as the calibration signal successfully corrected the jitter, thereby allowing broadband (2.5 THz) spectroscopy with a high spectral resolution (82…
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This study presents asynchronous optical sampling (ASOPS) terahertz spectroscopy using commercially available Ti:Sapphire lasers without stabilizing repetition frequency. Our postprocessing algorithm using the multiplied repetition frequency difference as the calibration signal successfully corrected the jitter, thereby allowing broadband (2.5 THz) spectroscopy with a high spectral resolution (82 MHz). The robustness of the jitter correction based on the free-running laser setup and broadband electric circuits was rigorously examined under varying temperatures, thereby demonstrating reliable long-term operations over 60 h. This study expands the applicability of the ASOPS terahertz time-domain spectroscopy.
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Submitted 8 January, 2025;
originally announced January 2025.
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Unidirectional output from a quantum-dot single-photon source hybrid integrated on silicon
Authors:
Ryota Katsumi,
Yasutomo Ota,
Takeyoshi Tajiri,
Masahiro Kakuda,
Satoshi Iwamoto,
Hidefumi Akiyama,
Yasuhiko Arakawa
Abstract:
We report a quantum-dot single-photon source (QD SPS) hybrid integrated on a silicon waveguide embedding a photonic crystal mirror, which reflects photons and enables efficient unidirectional output from the waveguide. The silicon waveguide is constituted of a subwavelength grating so as to maintain the high efficiency even under the presence of stacking misalignment accompanied by hybrid integrat…
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We report a quantum-dot single-photon source (QD SPS) hybrid integrated on a silicon waveguide embedding a photonic crystal mirror, which reflects photons and enables efficient unidirectional output from the waveguide. The silicon waveguide is constituted of a subwavelength grating so as to maintain the high efficiency even under the presence of stacking misalignment accompanied by hybrid integration processes. Experimentally, we assembled the hybrid photonic structure by transfer printing, and demonstrated single-photon generation from a QD and its unidirectional output from the waveguide. These results point out a promising approach toward scalable integration of SPSs on silicon quantum photonics platforms.
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Submitted 10 August, 2021;
originally announced August 2021.
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In-situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS silicon chip
Authors:
Ryota Katsumi,
Yasutomo Ota,
Alto Osada,
Takeyoshi Tajiri,
Takuto Yamaguchi,
Masahiro Kakuda,
Satoshi Iwamoto,
Hidefumi Akiyama,
Yasuhiko Arakawa
Abstract:
Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic…
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Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic solid-state SPSs, such as those based on InAs/GaAs quantum dots (QDs), is highly promising. However, the spectral and spatial randomness inherent in the QDs pose a serious challenge for scalable implementation of multiple identical SPSs on a silicon CMOS chip. To overcome this challenge, we have been investigating a new hybrid integration technique called transfer printing, which is based on a pick-and-place operation and allows for the integration of desired QD SPSs on any locations on the silicon CMOS chips at will. Nevertheless, even in this scenario, in-situ fine tuning for perfect wavelength matching among the integrated QD SPSs will be required for interfering photons from the dissimilar sources. Here, we demonstrate in-situ wavelength tuning of QD SPSs integrated on a CMOS silicon chip. To thermally tune the emission wavelengths of the integrated QDs, we augmented the QD SPSs with optically driven heating pads. The integration of all the necessary elements was performed using transfer printing, which largely simplified the fabrication of the three-dimensional stack of micro/nanophotonic structures. We further demonstrate in-situ wavelength matching between two dissimilar QD sources integrated on the same silicon chip. Our transfer-printing-based approach will open the possibility for realizing large-scale QPICs that leverage CMOS technology.
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Submitted 30 September, 2019;
originally announced September 2019.
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Quantum-dot single-photon source on a CMOS silicon photonic chip integrated using transfer printing
Authors:
Ryota Katsumi,
Yasutomo Ota,
Alto Osada,
Takuto Yamaguchi,
Takeyoshi Tajiri,
Masahiro Kakuda,
Satoshi Iwamoto,
Hidefumi Akiyama,
Yasuhiko Arakawa
Abstract:
Silicon photonics is a powerful platform for implementing large-scale photonic integrated circuits (PICs), because of its compatibility with mature complementary-metal-oxide-semiconductor (CMOS) technology. Exploiting silicon-based PICs for quantum photonic information processing (or the so-called silicon quantum photonics) provides a promising pathway for large-scale quantum applications. For the…
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Silicon photonics is a powerful platform for implementing large-scale photonic integrated circuits (PICs), because of its compatibility with mature complementary-metal-oxide-semiconductor (CMOS) technology. Exploiting silicon-based PICs for quantum photonic information processing (or the so-called silicon quantum photonics) provides a promising pathway for large-scale quantum applications. For the development of scalable silicon quantum PICs, a major challenge is integrating on-silicon quantum light sources that deterministically emit single photons. In this regard, the use of epitaxial InAs/GaAs quantum dots (QDs) is a very promising approach, because of their capability of deterministic single-photon emission with high purity and indistinguishability. However, the required hybrid integration is inherently difficult and often lacks the compatibility with CMOS processes. Here, we demonstrate a QD single-photon source (SPS) integrated on a glass-clad silicon photonic waveguide processed by a CMOS foundry. Hybrid integration is performed using transfer printing, which enables us to integrate heterogeneous optical components in a simple pick-and-place manner and thus assemble them after the entire CMOS process is completed. We observe single-photon emission from the integrated QD and its efficient coupling into the silicon waveguide. Our transfer-printing-based approach is fully compatible with CMOS back-end processes, and thus will open the possibility for realizing large-scale quantum PICs that leverage CMOS technology.
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Submitted 30 December, 2018;
originally announced December 2018.
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Molecular dynamics analysis of adsorption process of anti-copper-corrosion additives to the copper surface
Authors:
Kohei Nishikawa,
Hirotoshi Akiyama,
Kazuhiro Yagishita,
Hitoshi Washizu
Abstract:
As a model system of the adsorption process of anti-corrosion additives on a metal surface, molecular dynamics simulations of benzotriazole (BTA) molecules with copper slabs were completed. As a force field, ReaxFF was used to simulate both adsorption dynamics and the charge transfer on the solid surface. Two simulations are presented. In order to investigate the physical adsorption on the surface…
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As a model system of the adsorption process of anti-corrosion additives on a metal surface, molecular dynamics simulations of benzotriazole (BTA) molecules with copper slabs were completed. As a force field, ReaxFF was used to simulate both adsorption dynamics and the charge transfer on the solid surface. Two simulations are presented. In order to investigate the physical adsorption on the surface, the simulation was done for the adsorption process of BTA molecules on the copper (II) oxide slab. BTA molecules formed on adsorbed layer in parallel to the surface, and aggregation of the molecules due to the surface diffusion was found. In order to investigate the selective and chemical adsorption on the surface, a hybrid slab, which has both a copper (Cu) area and a copper (I) oxide (Cu2O) area, was used. A selective adsorption phenomenon was found. The number of BTA molecules adsorbed on the Cu area is 5 times greater than that on the Cu2O area. Detailed dynamics focused on charge transfer showed a surface diffusion and enhancement of polarization due to charge transfer from the metal surface caused the selective adsorption. In a real phenomenon, the reason why a few anti-corrosion additives are able to protect a metal surface is postulated to be due to this selective nature of adsorption onto a newly formed metal surface.
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Submitted 27 December, 2018;
originally announced December 2018.
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Nonequilibrium theory of the conversion-efficiency limit of solar cells including thermalization and extraction of carriers
Authors:
Kenji Kamide,
Toshimitsu Mochizuki,
Hidefumi Akiyama,
Hidetaka Takato
Abstract:
The ideal solar cell conversion efficiency limit known as the Shockley-Queisser (SQ) limit, which is based on a detailed balance between absorption and radiation, has long been a target for solar cell researchers. While the theory for this limit uses several assumptions, the requirements in real devices have not been discussed fully. Given the current situation in which research-level cell efficie…
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The ideal solar cell conversion efficiency limit known as the Shockley-Queisser (SQ) limit, which is based on a detailed balance between absorption and radiation, has long been a target for solar cell researchers. While the theory for this limit uses several assumptions, the requirements in real devices have not been discussed fully. Given the current situation in which research-level cell efficiencies are approaching the SQ limit, a quantitative argument with regard to these requirements is worthwhile in terms of understanding of the remaining loss mechanisms in current devices and the device characteristics of solar cells that are operating outside the detailed balance conditions. Here we examine two basic assumptions: (1) that the photo-generated carriers lose their kinetic energy via phonon emission in a moment (fast thermalization), and (2) that the photo-generated carriers are extracted into carrier reservoirs in a moment (fast extraction). Using a model that accounts for the carrier relaxation and extraction dynamics, we reformulate the nonequilibrium theory for solar cells in a manner that covers both the equilibrium and nonequilibrium regimes. Using a simple planar solar cell as an example, we address the parameter regime in terms of the carrier extraction time and then consider where the conventional SQ theory applies and what could happen outside the applicable range.
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Submitted 5 February, 2018;
originally announced February 2018.
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Sub-Cycle Optical Response Caused by Dressed State with Phase-Locked Wavefunctions
Authors:
K. Uchida,
T. Otobe,
T. Mochizuki,
C. Kim,
M. Yoshita,
H. Akiyama,
L. N. Pfeiffer,
K. W. West,
K. Tanaka,
H. Hirori
Abstract:
The coherent interaction of light with matter imprints the phase information of the light field on the wavefunction of the photon-dressed electronic state. Driving electric field, together with a stable phase that is associated with the optical probe pulses, enables the role of the dressed state in the optical response to be investigated. We observed optical absorption strengths modulated on a sub…
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The coherent interaction of light with matter imprints the phase information of the light field on the wavefunction of the photon-dressed electronic state. Driving electric field, together with a stable phase that is associated with the optical probe pulses, enables the role of the dressed state in the optical response to be investigated. We observed optical absorption strengths modulated on a sub-cycle timescale in a GaAs quantum well in the presence of a multi-cycle terahertz driving pulse using a near-infrared probe pulse. The measurements were in good agreement with the analytical formula that accounts for the optical susceptibilities caused by the dressed state of excitons, which indicates that the output probe intensity was coherently reshaped by the excitonic sideband emissions.
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Submitted 21 November, 2016;
originally announced November 2016.
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Time-resolved observation of coherent excitonic nonlinear response with a table-top narrowband THz pulse wave
Authors:
K. Uchida,
H. Hirori,
T. Aoki,
C. Wolpert,
T. Tamaya,
K. Tanaka,
T. Mochizuki,
C. Kim,
M. Yoshita,
H. Akiyama,
L. N. Pfeiffer,
K. W. West
Abstract:
By combining a tilted-pulse-intensity-front scheme using a LiNbO3 crystal and a chirped-pulse-beating method, we generated a narrowband intense terahertz (THz) pulse, which had a maximum electric field of more than 10 kV/cm at around 2 THz, a bandwidth of about 50 GHz,and frequency tunability from 0.5 to 2 THz. By performing THz-pump and near-infrared-probe experiments on GaAs quantum wells, we ob…
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By combining a tilted-pulse-intensity-front scheme using a LiNbO3 crystal and a chirped-pulse-beating method, we generated a narrowband intense terahertz (THz) pulse, which had a maximum electric field of more than 10 kV/cm at around 2 THz, a bandwidth of about 50 GHz,and frequency tunability from 0.5 to 2 THz. By performing THz-pump and near-infrared-probe experiments on GaAs quantum wells, we observed that the resonant excitation of the intraexcitonic 1s-2p transition induces a clear and large Autler-Townes splitting. Our time-resolved measurements show that the splitting energy observed in the rising edge region of electric field is larger than in the constant region. This result implies that the splitting energy depends on the time-averaged THz field over the excitonic dephasing time rather than that at the instant of the exciton creation by a probe pulse.
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Submitted 2 December, 2015;
originally announced December 2015.
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Fourier imaging study of efficient near-field optical coupling in solid immersion fluorescence microscopy
Authors:
Masahiro Yoshita,
Kazuko Koyama,
Motoyoshi Baba,
Hidefumi Akiyama
Abstract:
We measured images and Fourier images of fluorescence for 0.11- and 0.22-$μ$m-diameter dye-doped polystyrene micro-sphere beads on a solid immersion lens, and experimentally verified strongly-angle-dependent fluorescence intensities due to efficient near-field optical coupling in solid immersion fluorescence microscopy. The results are interpreted in comparison with calculated emission patterns…
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We measured images and Fourier images of fluorescence for 0.11- and 0.22-$μ$m-diameter dye-doped polystyrene micro-sphere beads on a solid immersion lens, and experimentally verified strongly-angle-dependent fluorescence intensities due to efficient near-field optical coupling in solid immersion fluorescence microscopy. The results are interpreted in comparison with calculated emission patterns of an emission dipole placed near a solid surface, which establish a basic model for high-collection efficiency in solid-immersion fluorescence microscopy.
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Submitted 2 May, 2002;
originally announced May 2002.
