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Graphene-Based Artificial Dendrites for Bio-Inspired Learning in Spiking Neuromorphic Systems
Authors:
Samuel Liu,
Deji Akinwande,
Dmitry Kireev,
Jean Anne C. Incorvia
Abstract:
Analog neuromorphic computing systems emulate the parallelism and connectivity of the human brain, promising greater expressivity and energy efficiency compared to digital systems. Though many devices have emerged as candidates for artificial neurons and artificial synapses, there have been few device candidates for artificial dendrites. In this work, we report on biocompatible graphene-based arti…
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Analog neuromorphic computing systems emulate the parallelism and connectivity of the human brain, promising greater expressivity and energy efficiency compared to digital systems. Though many devices have emerged as candidates for artificial neurons and artificial synapses, there have been few device candidates for artificial dendrites. In this work, we report on biocompatible graphene-based artificial dendrites (GrADs) that can implement dendritic processing. By using a dual side-gate configuration, current applied through a Nafion membrane can be used to control device conductance across a trilayer graphene channel, showing spatiotemporal responses of leaky recurrent, alpha, and gaussian dendritic potentials. The devices can be variably connected to enable higher order neuronal responses, and we show through data-driven spiking neural network classification simulations that overall spiking activity is reduced by up to 15% without accuracy loss while low frequency operation is stabilized. This positions the GrADs as strong candidates for energy efficient bio-interfaced spiking neural networks.
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Submitted 3 October, 2023;
originally announced October 2023.
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Multiferroic Ti$_3$C$_2$T$_x$ MXene with Tunable Ferroelectric-controlled High Performance Resistive Memory Devices
Authors:
Rabia Tahir,
Sabeen Fatima,
Syedah Afsheen Zahra,
Deji Akinwande,
Syed Rizwana
Abstract:
Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is rarely reported in literature. We reported a simple approach to reveal frequency-dependent ferroelectricity and mutiferroicity in Ti$_3$C$_2$T$_x$ MXene film at…
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Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is rarely reported in literature. We reported a simple approach to reveal frequency-dependent ferroelectricity and mutiferroicity in Ti$_3$C$_2$T$_x$ MXene film at room-temperature. To study the frequency and poling effect on ferroelectricity as well as multiferroicity, we performed electric polarization vs. electric field measurement at different external frequencies measured under zero and non-zero static magnetic fields. In order to further investigate this effect, the magneto-electric (ME) coupling was also performed to confirm the multiferroic nature of our synthesized Ti$_3$C$_2$T$_x$ MXene film. The ferroelectric hysteresis effect was attributed to the switching of electric domain walls under low frequencies that continue to respond to at much extent to the higher frequencies. The coupling between disordered electric dipoles with local spin moments could cause presence of strong magneto-electric coupling. Moreover, the bipolar resistive switching in trilayer memory devices also supports the ferroelectric behavior of HT- Ti$_3$C$_2$T$_x$ MXene film and showed uniform repeatability in switching behavior due to minimum dielectric loss inside ferroelectric HT-Ti$_3$C$_2$T$_x$ MXene along with improved on/off ratio in comparison to non-ferroelectric Ti$_3$C$_2$T$_x$ MXene. The unique multiferroic behavior along with ferroelectric-tuned memristor devices reported here at room temperature will help understand the intrinsic nature of 2D materials and will establish novel data storage devices.
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Submitted 27 August, 2022;
originally announced August 2022.
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Light-driven C-H bond activation mediated by 2D transition metal dichalcogenides
Authors:
Jingang Li,
Di Zhang,
Zhongyuan Guo,
Xi Jiang,
Jonathan M. Larson,
Haoyue Zhu,
Tianyi Zhang,
Yuqian Gu,
Brian Blankenship,
Min Chen,
Zilong Wu,
Suichu Huang,
Robert Kostecki,
Andrew M. Minor,
Costas P. Grigoropoulos,
Deji Akinwande,
Mauricio Terrones,
Joan M. Redwing,
Hao Li,
Yuebing Zheng
Abstract:
C-H bond activation enables the facile synthesis of new chemicals. While C-H activation in short-chain alkanes has been widely investigated, it remains largely unexplored for long-chain organic molecules. Here, we report light-driven C-H activation in complex organic materials mediated by 2D transition metal dichalcogenides (TMDCs) and the resultant solid-state synthesis of luminescent carbon dots…
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C-H bond activation enables the facile synthesis of new chemicals. While C-H activation in short-chain alkanes has been widely investigated, it remains largely unexplored for long-chain organic molecules. Here, we report light-driven C-H activation in complex organic materials mediated by 2D transition metal dichalcogenides (TMDCs) and the resultant solid-state synthesis of luminescent carbon dots in a spatially-resolved fashion. We unravel the efficient H adsorption and a lowered energy barrier of C-C coupling mediated by 2D TMDCs to promote C-H activation. Our results shed light on 2D materials for C-H activation in organic compounds for applications in organic chemistry, environmental remediation, and photonic materials.
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Submitted 15 November, 2023; v1 submitted 16 August, 2022;
originally announced August 2022.
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Metaplastic and Energy-Efficient Biocompatible Graphene Artificial Synaptic Transistors for Enhanced Accuracy Neuromorphic Computing
Authors:
Dmitry Kireev,
Samuel Liu,
Harrison Jin,
T. Patrick Xiao,
Christopher H. Bennett,
Deji Akinwande,
Jean Anne Incorvia
Abstract:
CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to parallel data storage and processing. In contrast, the human brain is a living computational signal processing unit that operates with extreme parallelism and energy efficiency. Although numerous neuromorphic electronic devices have emerged in the last decade, most of them are rigid or con…
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CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to parallel data storage and processing. In contrast, the human brain is a living computational signal processing unit that operates with extreme parallelism and energy efficiency. Although numerous neuromorphic electronic devices have emerged in the last decade, most of them are rigid or contain materials that are toxic to biological systems. In this work, we report on biocompatible bilayer graphene-based artificial synaptic transistors (BLAST) capable of mimicking synaptic behavior. The BLAST devices leverage a dry ion-selective membrane, enabling long-term potentiation, with ~50 aJ/m^2 switching energy efficiency, at least an order of magnitude lower than previous reports on two-dimensional material-based artificial synapses. The devices show unique metaplasticity, a useful feature for generalizable deep neural networks, and we demonstrate that metaplastic BLASTs outperform ideal linear synapses in classic image classification tasks. With switching energy well below the 1 fJ energy estimated per biological synapse, the proposed devices are powerful candidates for bio-interfaced online learning, bridging the gap between artificial and biological neural networks.
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Submitted 8 March, 2022;
originally announced March 2022.
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2D Materials for Future Heterogeneous Electronics
Authors:
Max C. Lemme,
Deji Akinwande,
Cedric Huyghebaert,
Christoph Stampfer
Abstract:
Graphene and two-dimensional materials (2DM) remain an active field of research in science and engineering over 15 years after the first reports of 2DM. The vast amount of available data and the high performance of device demonstrators leave little doubt about the potential of 2DM for applications in electronics, photonics and sensing. So where are the integrated chips and enabled products? We try…
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Graphene and two-dimensional materials (2DM) remain an active field of research in science and engineering over 15 years after the first reports of 2DM. The vast amount of available data and the high performance of device demonstrators leave little doubt about the potential of 2DM for applications in electronics, photonics and sensing. So where are the integrated chips and enabled products? We try to answer this by summarizing the main challenges and opportunities that have thus far prevented 2DM applications.
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Submitted 21 March, 2022; v1 submitted 15 October, 2021;
originally announced October 2021.
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Integrated ultra-high-performance graphene optical modulator
Authors:
Elham Heidari,
Hamed Dalir,
Farzad Mokhtari-Koushyar,
Behrouz Movahhed Nouri,
Chandraman Patil,
Mario Miscuglio,
Deji Akinwande,
Volker Sorger
Abstract:
With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is getting increasingly difficult. Heterogeneous material integration into Silicon- and Nitride-based photonics has showed high-speed promise, albeit at the expense of millimeter- to centimeter-scale footprints.…
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With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is getting increasingly difficult. Heterogeneous material integration into Silicon- and Nitride-based photonics has showed high-speed promise, albeit at the expense of millimeter- to centimeter-scale footprints. The hunt for an electro-optic modulator that combines high speed, energy efficiency, and compactness to support high component density on-chip continues. Using a double-layer graphene optical modulator integrated on a Silicon photonics platform, we are able to achieve 60 GHz speed (3 dB roll-off), micrometer compactness, and efficiency of 2.25 fJ/bit in this paper. The electro-optic response is boosted further by a vertical distributed-Bragg-reflector cavity, which reduces the driving voltage by about 40 times while maintaining a sufficient modulation depth (5.2 dB/V). Modulators that are small, efficient, and quick allow high photonic chip density and performance, which is critical for signal processing, sensor platforms, and analog- and neuromorphic photonic processors.
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Submitted 28 February, 2022; v1 submitted 15 September, 2021;
originally announced September 2021.
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A small-signal description of black phosphorus transistor technologies for high-frequency applications
Authors:
Leslie Valdez-Sandoval,
Eloy Ramirez-Garcia,
Saungeun Park,
Deji Akinwande,
David Jimenez,
Anibal Pacheco-Sanchez
Abstract:
This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from different BPFET technologies. Single- and double-stage radio frequency gain amplifiers, are design…
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This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from different BPFET technologies. Single- and double-stage radio frequency gain amplifiers, are designed at 2.4 GHz using the experimentally-calibrated small-signal BPFET EC. Results show high-gain high-selective BPFET-based amplifiers.
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Submitted 8 June, 2021;
originally announced June 2021.
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Reduced Graphene Oxide Tattoo as Wearable Proximity Sensor
Authors:
Vaishakh Kedambaimoole,
Neelotpala Kumar,
Vijay Shirhatti,
Suresh Nuthalapati,
Saurabh Kumar,
Mangalore Manjunatha Nayak,
Prosenjit Sen,
Deji Akinwande,
Konandur Rajanna
Abstract:
The human body is punctuated with wide array of sensory systems that provide a high evolutionary advantage by facilitating formation of a detailed picture of the immediate surroundings. The sensors range across a wide spectrum, acquiring input from non-contact audio-visual means to contact based input via pressure and temperature. The ambit of sensing can be extended further by imparting the body…
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The human body is punctuated with wide array of sensory systems that provide a high evolutionary advantage by facilitating formation of a detailed picture of the immediate surroundings. The sensors range across a wide spectrum, acquiring input from non-contact audio-visual means to contact based input via pressure and temperature. The ambit of sensing can be extended further by imparting the body with increased non-contact sensing capability through the phenomenon of electrostatics. Here we present graphene-based tattoo sensor for proximity sensing, employing the principle of electrostatic gating. The sensor shows a remarkable change in resistance upon exposure to objects surrounded with static charge on them. Compared to prior work in this field, the sensor has demonstrated the highest recorded proximity detection range of 20 cm. It is ultra-thin, highly skin conformal and comes with a facile transfer process such that it can be tattooed on highly curvilinear rough substrates like the human skin, unlike other graphene-based proximity sensors reported before. Present work details the operation of wearable proximity sensor while exploring the effect of mounting body on the working mechanism. A possible role of the sensor as an alerting system against unwarranted contact with objects in public places especially during the current SARS-CoV-2 pandemic has also been explored in the form of an LED bracelet whose color is controlled by the proximity sensor attached to it.
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Submitted 10 December, 2020;
originally announced December 2020.
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Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
Authors:
Francisco Pasadas,
Enrique G. Marin,
Alejandro Toral-Lopez,
Francisco G. Ruiz,
Andrés Godoy,
Saungeun Park,
Deji Akinwande,
David Jiménez
Abstract:
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi-Dirac statistics coupled with an appropriate field-ef…
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We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi-Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward-Dutton linear charge partition scheme that guarantees charge-conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2 FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs.
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Submitted 4 February, 2020;
originally announced February 2020.
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Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
Authors:
Di Wu,
Wei Li,
Amritesh Rai,
Xiaoyu Wu,
Hema C. P. Movva,
Maruthi N. Yogeesh,
Zhaodong Chu,
Sanjay K. Banerjee,
Deji Akinwande,
Keji Lai
Abstract:
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical i…
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The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing anti-ambipolar effect in the transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS2 and holes in the p-type WSe2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The configuration is analogous to the p-i-n diode, where the injected carriers dominate in the recombination current. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS2-heterostructure-WSe2. Our work vividly demonstrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research.
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Submitted 21 February, 2019;
originally announced February 2019.
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Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer
Authors:
Li Tao,
Milo Holt,
Jongho Lee,
Harry Chou,
Stephen J. McDonnell,
Domingo A. Ferrer,
Matias Babenco,
Robert M. Wallace,
Sanjay K. Banerjee,
Rodney S. Ruoff,
Deji Akinwande
Abstract:
Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to crystalline at the growth temperature as corroborated by X-ra…
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Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to crystalline at the growth temperature as corroborated by X-ray diffraction and electron backscatter diffraction. Noticeably, phase transition of copper film is observed on technologically ubiquitous oxidized Si wafer where the oxide is a standard amorphous thermal oxide. Ion mass spectroscopy indicates that the copper films can be purposely hydrogen-enriched during a hydrogen anneal which subsequently affords graphene growth with a sole carbonaceous precursor for low defect densities. Owing to the strong hexagonal lattice match, the graphene domains align to the Cu (111) domains, suggesting a pathway for increasing the graphene grains by maximizing the copper grain sizes. Fabricated graphene transistors on a flexible polyimide film yield a peak carrier mobility ~4,930 cm2/Vs.
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Submitted 7 May, 2012;
originally announced May 2012.