Showing 1–1 of 1 results for author: Afanas`ev, V

The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT

Authors: Hongwei Tang, Dennis Lin, Subhali Subhechha, Adrian Chasin, Daisuke Matsubayashi, Michiel van Setten, Yiqun Wan, Harold Dekkers, Jie Li, Shruthi Subramanian, Zhuo Chen, Nouredine Rassoul, Yuchao Jiang, Jan Van Houdt, Valeri Afanas`ev, Gouri Sankar Kar, Attilio Belmonte

Abstract: While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy distribution of traps inferred from temperature-dependent (T = 4 K - 300 K) and multi-frequency (f = 1 kHz - 100 kHz) admittance measurements, reveals a much highe… ▽ More While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy distribution of traps inferred from temperature-dependent (T = 4 K - 300 K) and multi-frequency (f = 1 kHz - 100 kHz) admittance measurements, reveals a much higher trap density in TG devices. By analyzing the impact of each process step and conducting forming gas anneal (FGA) experiments, we reveal the role of hydrogen in the deterioration of the SS in the IGZO-based transistors. △ Less

Submitted 17 June, 2025; originally announced July 2025.

Journal ref: IEEE Electron Device Letters ( Volume: 46, Issue: 5, May 2025)