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The role of Solar Activity in shaping Precipitation Extremes: A Regional Exploration in Kerala, India
Authors:
Elizabeth Thomas,
S. Vineeth,
Noble P. Abraham
Abstract:
There has been global attention focused on extreme climatic changes. The purpose of this paper is to explore the response of extreme precipitation events to solar activity, over Kerala, India. The three solar indices - sunspot number, F10.7 index, and cosmic ray intensity - are examined, and their relationship to rainfall is examined during a 57-year period (1965 - 2021), starting with Solar Cycle…
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There has been global attention focused on extreme climatic changes. The purpose of this paper is to explore the response of extreme precipitation events to solar activity, over Kerala, India. The three solar indices - sunspot number, F10.7 index, and cosmic ray intensity - are examined, and their relationship to rainfall is examined during a 57-year period (1965 - 2021), starting with Solar Cycle 20. Both solar and rainfall data are considered on an annual scale as well as on a seasonal scale by dividing them into winter, pre-monsoon, monsoon, and post-monsoon seasons. The solar indices are used to calculate correlation coefficients with seasonal rainfall. Through correlation analysis, it is found that the precipitation in Kerala is correlated with the sunspot activity, but with different significance. When solar activity is high, the winter and monsoon seasons exhibit strong correlations with high significance. The solar influence at the regional level is also studied. The central and southern parts of Kerala appear to be influenced by the Sun during periods of high activity. The years with excess and deficiency of rainfall are calculated and compared with the solar indices. It was observed that the years with excessive and insufficient rainfall coincide with the years when the solar activity is at its highest or minimum. It is suggested that there is a physical link and a way to predict extreme rainfall events in Kerala based on the association between solar activity and those events.
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Submitted 2 November, 2024;
originally announced November 2024.
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Wavelet analysis of possible association between sunspot number and rainfall over Kerala, India: A case study
Authors:
Elizabeth Thomas,
S. Vineeth,
Noble P. Abraham
Abstract:
Global attention has been focused on extreme climatic changes. This paper investigates the relationship between different phases of solar activity and extreme precipitation events in Kerala, India. Sunspot number and rainfall data were analysed over 122 years (1901-2022) on an annual scale. A negative correlation was observed in the winter and post-monsoon seasons, while positive correlations were…
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Global attention has been focused on extreme climatic changes. This paper investigates the relationship between different phases of solar activity and extreme precipitation events in Kerala, India. Sunspot number and rainfall data were analysed over 122 years (1901-2022) on an annual scale. A negative correlation was observed in the winter and post-monsoon seasons, while positive correlations were seen in the pre-monsoon and monsoon seasons, all of which were statistically significant. Using cross-wavelet transform, the temporal relationship between sunspot number and rainfall values was investigated, revealing significant cross-power at an 8-12 year scale across all seasons. Wavelet coherence between the two data sets demonstrated significant correlation at the 2-4 and 4-8 year scales throughout the four seasons. The results show that the seasonal rainfall over Kerala is related to solar activity. The solar phases of Solar Cycles 14-24 were determined for all seasons, and the years with excessive and insufficient rainfall were identified. It was observed that the descending phase had an impact on excess rainfall events during the winter and pre-monsoon seasons, while the ascending phase notably affected the monsoon and post-monsoon seasons. The study specifically examined the different magnetic polarities of sunspots in alternating solar cycles, focusing on even and odd cycles. It was found that extreme rainfall events were more frequent during the winter and pre-monsoon seasons in the even cycles, whereas in the odd cycles, they were more prevalent during the monsoon and post-monsoon seasons. These findings are presented for the first time and may offer new perspectives on how different phases affect rainfall. This study suggests a physical link between solar activity and extreme precipitation in Kerala, which could increase predictability.
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Submitted 14 November, 2024;
originally announced November 2024.
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Dust Acoustic Rogue Waves in a Cometary Environment with kappa Distributed Electrons and Protons
Authors:
S. Vineeth,
Noble P. Abraham
Abstract:
Charged dust is present in almost all astrophysical and laboratory plasma environments. They alter the plasma charge density and also give rise to various modes of electrostatic waves and oscillations. In this paper we study the properties of Dust Acoustic Rogue Waves (DARW) in a cometary environment with positively and negatively charged dust components, kappa distributed - protons and electrons.…
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Charged dust is present in almost all astrophysical and laboratory plasma environments. They alter the plasma charge density and also give rise to various modes of electrostatic waves and oscillations. In this paper we study the properties of Dust Acoustic Rogue Waves (DARW) in a cometary environment with positively and negatively charged dust components, kappa distributed - protons and electrons. Nonlinear Schrodinger Equation (NLSE) is derived using reductive perturbation method and analysed for modulational instability. The system is found to be modulationally unstable above some particular value of wave number($k=0.5$), after which the system is unstable. The solution for rogue waves is tested in this environment theoretically. Amplitude and structure of first and second order rogue waves are compared for various plasma parameters. Higher charge number of positive dust, $(z_+ > z_-)$ decreases the amplitude of RWs, while higher number density of positive dust $(n_+>n_-)$ ions increases it. As number density of proton $(n_i)$ increases the amplitude of RW decreases. Peak values increase with number density exponentially for positive and linearly for negative dust ions. It increases linearly with charge number of both positive and negative dust ions. Peak value decreases exponentially for number density of proton.
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Submitted 27 October, 2024;
originally announced October 2024.
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Non-adiabatic couplings as a stabilization mechanism in long-range Rydberg molecules
Authors:
Aileen A. T. Durst,
Milena Simić,
Neethu Abraham,
Matthew T. Eiles
Abstract:
Long-range Rydberg molecules are typically bound in wells formed in their oscillatory potential energy curves. In alkaline Rydberg molecules, bound vibrational states exist even when these potential wells are disrupted by level repulsion from the steep butterfly potential energy curve induced by a scattering shape resonance. The binding in this case is attributed to quantum reflection. However, th…
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Long-range Rydberg molecules are typically bound in wells formed in their oscillatory potential energy curves. In alkaline Rydberg molecules, bound vibrational states exist even when these potential wells are disrupted by level repulsion from the steep butterfly potential energy curve induced by a scattering shape resonance. The binding in this case is attributed to quantum reflection. However, the rapidly varying regions of the potential energy landscape where quantum reflection occurs often coincide with regions where non-adiabatic coupling becomes significant. By comparing the molecular states calculated within the Born-Oppenheimer approximation, where quantum reflection is the only binding mechanism, with those obtained from the full set of coupled channel equations, we can assess the effects of non-adiabatic coupling on vibrational energies and lifetimes. Our findings show that these couplings can stabilize the molecule by providing an additional barrier which protects the vibrational states from predissociation and non-radiative transitions. There can also be extreme cases where non-adiabatic coupling completely dominates the binding and the molecular lifetimes saturate at the atomic Rydberg lifetime.
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Submitted 27 August, 2024;
originally announced August 2024.
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Laser patterned diamond electrodes for adhesion and proliferation of human mesenchymal stem cells
Authors:
Hassan N. Al Hashem,
Amanda N. Abraham,
Deepak Sharma,
Andre Chambers,
Mehrnoosh Moghaddar,
Chayla L. Reeves,
Sanjay K. Srivastava,
Amy Gelmi,
Arman Ahnood
Abstract:
The ability to form diamond electrodes on insulating polycrystalline diamond substrates using single-step laser patterning, and the use of the electrodes as a substrate that supports the adhesion and proliferation of human mesenchymal stem cells (hMSCs) is demonstrated. Laser induced graphitisation results in a conductive amorphous carbon surface, rich in oxygen and nitrogen terminations. This res…
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The ability to form diamond electrodes on insulating polycrystalline diamond substrates using single-step laser patterning, and the use of the electrodes as a substrate that supports the adhesion and proliferation of human mesenchymal stem cells (hMSCs) is demonstrated. Laser induced graphitisation results in a conductive amorphous carbon surface, rich in oxygen and nitrogen terminations. This results in an electrode with a high specific capacitance of 182 uF/cm2, a wide water window of 3.25 V, and a low electrochemical impedance of 129 Ohms/cm2 at 1 kHz. The electrodes surface exhibited a good level of biocompatibility with hMSCs, supporting cell adhesion and proliferation. The cells cultured on the electrode displayed significant elongation and alignment along the direction of the laser patterned microgrooves. Because of its favourable electrochemical performance and biocompatibility, the laser-patterned diamond electrodes create a potential for a versatile platform in stem cell therapeutics.
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Submitted 28 July, 2024;
originally announced July 2024.
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Solar activity and extreme rainfall over Kerala, India
Authors:
Elizabeth Thomas,
S. Vineeth,
Noble P. Abraham
Abstract:
This paper examines the relationship between solar activity and extreme rainfall events in Kerala, India. Kerala receives minimum and maximum rainfall during winter and monsoon seasons. Sunspot number, F10.7 Index, and cosmic ray intensity are the solar indices considered, and their variations with rainfall are studied over 57 years (1965-2021), i.e., starting from Solar Cycle 20. Correlative stud…
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This paper examines the relationship between solar activity and extreme rainfall events in Kerala, India. Kerala receives minimum and maximum rainfall during winter and monsoon seasons. Sunspot number, F10.7 Index, and cosmic ray intensity are the solar indices considered, and their variations with rainfall are studied over 57 years (1965-2021), i.e., starting from Solar Cycle 20. Correlative studies are performed for each solar cycle, and correlation coefficients are calculated. We find that rainfall in Kerala is correlated with sunspot activity but with varying degrees of significance. During Solar Cycle 21, rainfall and solar activity are correlated with high significance during both winter and monsoon seasons. The variation of different solar indices with rainfall is studied. The winter season showed a better link between the sun and rainfall than the monsoon season. The years with rainfall surplus and deficiency are calculated and compared with the solar indices. {We find that the years with rainfall excess and deficit mainly occur in the years around solar maximum or minimum (within $\pm$2 years).} We hypothesize a physical relationship between solar activity and extreme rainfall events in Kerala that contributes to their predictability.
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Submitted 14 November, 2024; v1 submitted 15 July, 2024;
originally announced July 2024.
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A High-Quality Entropy Source Using van der Waals Heterojunction for True Random Number Generation
Authors:
Nithin Abraham,
Kenji Watanabe,
Takashi Taniguchi,
Kausik Majumdar
Abstract:
Generators of random sequences used in high-end applications such as cryptography rely on entropy sources for their indeterminism. Physical processes governed by the laws of quantum mechanics are excellent sources of entropy available in nature. However, extracting enough entropy from such systems for generating truly random sequences is challenging while maintaining the feasibility of the extract…
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Generators of random sequences used in high-end applications such as cryptography rely on entropy sources for their indeterminism. Physical processes governed by the laws of quantum mechanics are excellent sources of entropy available in nature. However, extracting enough entropy from such systems for generating truly random sequences is challenging while maintaining the feasibility of the extraction procedure for real-world applications. Here, we present a compact and an all-electronic van der Waals (vdW) heterostructure-based device capable of detecting discrete charge fluctuations for extracting entropy from physical processes and use it for the generation of independent and identically distributed (IID) true random sequences. We extract a record high value ($>0.98~bits/bit$) of min-entropy using the proposed scheme. We demonstrate an entropy generation rate tunable over multiple orders of magnitude and show the persistence of the underlying physical process for temperatures ranging from cryogenic to ambient conditions. We verify the random nature of the generated sequences using tests such as NIST SP 800-90B standard and other statistical measures and verify the suitability our random sequence for cryptographic applications using the NIST SP 800-22 standard. The generated random sequences are then used in implementing various randomized algorithms without any preconditioning steps.
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Submitted 13 April, 2022;
originally announced April 2022.
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Contact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire
Authors:
Pushkar Dasika,
Debadarshini Samantaray,
Krishna Murali,
Nithin Abraham,
Kenji Watanabe,
Takashi Taniguchi,
N. Ravishankar,
Kausik Majumdar
Abstract:
Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology node. In particular, the junctionless nanowire transistors are highly scalable with reduced variability due to avoidance of steep source/drain junction formation by ion implantation. Here we demonstrate a dual-gated junct…
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Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology node. In particular, the junctionless nanowire transistors are highly scalable with reduced variability due to avoidance of steep source/drain junction formation by ion implantation. Here we demonstrate a dual-gated junctionless nanowire \emph{p}-type field effect transistor using tellurium nanowire as the channel. The dangling-bond-free surface due to the unique helical crystal structure of the nanowire, coupled with an integration of dangling-bond-free, high quality hBN gate dielectric, allows us to achieve a phonon-limited field effect hole mobility of $570\,\mathrm{cm^{2}/V\cdot s}$ at 270 K, which is well above state-of-the-art strained Si hole mobility. By lowering the temperature, the mobility increases to $1390\,\mathrm{cm^{2}/V\cdot s}$ and becomes primarily limited by Coulomb scattering. \txc{The combination of an electron affinity of $\sim$4 eV and a small bandgap of tellurium provides zero Schottky barrier height for hole injection at the metal-contact interface}, which is remarkable for reduction of contact resistance in a highly scaled transistor. Exploiting these properties, coupled with the dual-gated operation, we achieve a high drive current of $216\,\mathrm{μA/μm}$ while maintaining an on-off ratio in excess of $2\times10^4$. The findings have intriguing prospects for alternate channel material based next-generation electronics.
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Submitted 5 February, 2021;
originally announced February 2021.
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Highly tunable layered exciton in bilayer WS$_2$: linear quantum confined Stark effect versus electrostatic doping
Authors:
Sarthak Das,
Medha Dandu,
Garima Gupta,
Krishna Murali,
Nithin Abraham,
Sangeeth Kallatt,
Kenji Watanabe,
Takashi Taniguchi,
Kausik Majumdar
Abstract:
In 1H monolayer transition metal dichalcogenide, the inversion symmetry is broken, while the reflection symmetry is maintained. On the contrary, in the bilayer, the inversion symmetry is restored, but the reflection symmetry is broken. As a consequence of these contrasting symmetries, here we show that bilayer WS$_2$ exhibits a quantum confined Stark effect (QCSE) that is linear with the applied o…
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In 1H monolayer transition metal dichalcogenide, the inversion symmetry is broken, while the reflection symmetry is maintained. On the contrary, in the bilayer, the inversion symmetry is restored, but the reflection symmetry is broken. As a consequence of these contrasting symmetries, here we show that bilayer WS$_2$ exhibits a quantum confined Stark effect (QCSE) that is linear with the applied out-of-plane electric field, in contrary to a quadratic one for a monolayer. The interplay between the unique layer degree of freedom in the bilayer and the field driven partial inter-conversion between intra-layer and inter-layer excitons generates a giant tunability of the exciton oscillator strength. This makes bilayer WS$_2$ a promising candidate for an atomically thin, tunable electro-absorption modulator at the exciton resonance, particularly when stacked on top of a graphene layer that provides an ultra-fast non-radiative relaxation channel. By tweaking the biasing configuration, we further show that the excitonic response can be largely tuned through electrostatic doping, by efficiently transferring the oscillator strength from neutral to charged exciton. The findings are prospective towards highly tunable, atomically thin, compact and light, on chip, reconfigurable components for next generation optoelectronics.
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Submitted 13 November, 2020;
originally announced November 2020.
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Anomalous Stark Shift of Excitonic Complexes in Monolayer Semiconductor
Authors:
Nithin Abraham,
Kenji Watanabe,
Takashi Taniguchi,
Kausik Majumdar
Abstract:
Monolayer transition metal dichalcogenide semiconductors host strongly bound two-dimensional excitonic complexes, and form an excellent platform for probing many-body physics through manipulation of Coulomb interaction. Quantum confined Stark effect is one of the routes to dynamically tune the emission line of these excitonic complexes. In this work, using a high quality graphene/hBN/WS$_2$/hBN/Au…
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Monolayer transition metal dichalcogenide semiconductors host strongly bound two-dimensional excitonic complexes, and form an excellent platform for probing many-body physics through manipulation of Coulomb interaction. Quantum confined Stark effect is one of the routes to dynamically tune the emission line of these excitonic complexes. In this work, using a high quality graphene/hBN/WS$_2$/hBN/Au vertical heterojunction, we demonstrate for the first time, an out-of-plane electric field driven change in the sign of the Stark shift from blue to red for four different excitonic species, namely, the neutral exciton, the charged exciton (trion), the charged biexciton, and the defect-bound exciton. Such universal non-monotonic Stark shift with electric field arises from a competition between the conventional quantum confined Stark effect driven red shift and a suppressed binding energy driven anomalous blue shift of the emission lines, with the latter dominating in the low field regime. We also find that the encapsulating environment of the monolayer TMDC plays an important role in wave function spreading, and hence in determining the magnitude of the blue Stark shift. The results for neutral and charged excitonic species are in excellent agreement with calculations from Bethe-Salpeter Equation that uses seven-band per spin tight binding Hamiltonian. The findings have important implications in probing many-body interaction in the two dimension as well as in developing layered semiconductor based tunable optoelectronic devices.
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Submitted 31 October, 2020;
originally announced November 2020.
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Astability versus Bistability in van der Waals Tunnel Diode for Voltage Controlled Oscillator and Memory Applications
Authors:
Nithin Abraham,
Krishna Murali,
Kenji Watanabe,
Takashi Taniguchi,
Kausik Majumdar
Abstract:
Van der Waals (vdW) tunnel junctions are attractive due to their atomically sharp interface, gate tunablity, and robustness against lattice mismatch between the successive layers. However, the negative differential resistance (NDR) demonstrated in this class of tunnel diodes often exhibits noisy behaviour with low peak current density, and lacks robustness and repeatability, limiting their practic…
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Van der Waals (vdW) tunnel junctions are attractive due to their atomically sharp interface, gate tunablity, and robustness against lattice mismatch between the successive layers. However, the negative differential resistance (NDR) demonstrated in this class of tunnel diodes often exhibits noisy behaviour with low peak current density, and lacks robustness and repeatability, limiting their practical circuit applications. Here we propose a strategy of using a 1L-WS$_2$ as an optimum tunnel barrier sandwiched in a broken gap tunnel junction of highly doped black phosphorus (BP) and SnSe$_2$. We achieve high yield tunnel diodes exhibiting highly repeatable, ultra-clean, and gate tunable NDR characteristics with a signature of intrinsic oscillation, and a large peak-to-valley current ratio (PVCR) of 3.6 at 300 K (4.6 at 7 K), making them suitable for practical applications. We show that the thermodynamic stability of the vdW tunnel diode circuit can be tuned from astability to bistability by altering the constraint through choosing a voltage or a current bias, respectively. In the astable mode under voltage bias, we demonstrate a compact, voltage controlled oscillator without the need for an external tank circuit. In the bistable mode under current bias, we demonstrate a highly scalable, single element one-bit memory cell that is promising for dense random access memory applications in memory intensive computation architectures.
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Submitted 26 October, 2020;
originally announced October 2020.
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Statistical mechanical approximations to more efficiently determine polymorph free energy differences for small organic molecules
Authors:
Nathan S. Abraham,
Michael R. Shirts
Abstract:
Methods to efficiently determine the relative stability of polymorphs of organic crystals are highly desired in crystal structure predictions (CSPs). Current methodologies include use of static lattice phonons, quasi-harmonic approximation (QHA), and computing the full thermodynamic cycle using replica exchange molecular dynamics (REMD). We found that 13 out of the 29 systems minimized from experi…
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Methods to efficiently determine the relative stability of polymorphs of organic crystals are highly desired in crystal structure predictions (CSPs). Current methodologies include use of static lattice phonons, quasi-harmonic approximation (QHA), and computing the full thermodynamic cycle using replica exchange molecular dynamics (REMD). We found that 13 out of the 29 systems minimized from experiment restructured to a lower energy minima when heated using REMD, a phenomena that QHA cannot capture. Here, we present a series of methods that are intermediate in accuracy and expense between QHA and computing the full thermodynamic cycle which can save 42-80% of the computational cost and introduces, on this benchmark, a relatively small (0.16 +/- 0.04 kcal/mol) error relative to the full pseudosupercritical path approach. In particular, a method that Boltzmann weights the harmonic free energy of the trajectory of an REMD replica appears to be an appropriate intermediate between QHA and full thermodynamic cycle using MD when screening crystal polymorph stability.
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Submitted 4 June, 2020;
originally announced June 2020.
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Gate-tunable trion switch for excitonic device applications
Authors:
Sarthak Das,
Sangeeth Kallatt,
Nithin Abraham,
Kausik Majumdar
Abstract:
Trions are excitonic species with a positive or negative charge, and thus, unlike neutral excitons, the flow of trions can generate a net detectable charge current. Trions under favourable doping conditions can be created in a coherent manner using resonant excitation. In this work, we exploit these properties to demonstrate a gate controlled trion switch in a few-layer graphene/monolayer WS2/mono…
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Trions are excitonic species with a positive or negative charge, and thus, unlike neutral excitons, the flow of trions can generate a net detectable charge current. Trions under favourable doping conditions can be created in a coherent manner using resonant excitation. In this work, we exploit these properties to demonstrate a gate controlled trion switch in a few-layer graphene/monolayer WS2/monolayer graphene vertical heterojunction. By using a high resolution spectral scan through a temperature controlled variation of the bandgap of the WS2 sandwich layer, we obtain a gate voltage dependent vertical photocurrent strongly relying on the spectral position of the excitation, and the photocurrent maximizes when the excitation energy is resonant with the trion peak position. Further, the resonant photocurrent thus generated can be effectively controlled by a back gate voltage applied through the incomplete screening of the bottom monolayer graphene, and the photocurrent strongly correlates with the gate dependent trion intensity, while the non-resonant photocurrent exhibits only a weak gate dependence -unambiguously proving a trion driven photocurrent generation under resonance. We estimate a sub-100 fs switching time of the device. The findings are useful towards demonstration of ultra-fast excitonic devices in layered materials.
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Submitted 23 March, 2020;
originally announced March 2020.
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Highly Sensitive, Fast Graphene Photodetector with Responsivity $>10^6$ A/W Using Floating Quantum Well Gate
Authors:
Krishna Murali,
Nithin Abraham,
Sarthak Das,
Sangeeth Kallatt,
Kausik Majumdar
Abstract:
Graphene, owing to its zero bandgap electronic structure, is promising as an absorption material for ultra-wideband photodetection applications. However, graphene-absorption based detectors inherently suffer from poor responsivity due to weak absorption and fast photocarrier recombination, limiting their viability for low intensity light detection. Here we use a graphene/WS$_2$/MoS$_2$ vertical he…
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Graphene, owing to its zero bandgap electronic structure, is promising as an absorption material for ultra-wideband photodetection applications. However, graphene-absorption based detectors inherently suffer from poor responsivity due to weak absorption and fast photocarrier recombination, limiting their viability for low intensity light detection. Here we use a graphene/WS$_2$/MoS$_2$ vertical heterojunction to demonstrate a highly sensitive photodetector, where the graphene layer serves dual purpose, namely as the light absorption layer, and also as the carrier conduction channel, thus maintaining the broadband nature of the photodetector. A fraction of the photoelectrons in graphene encounter ultra-fast inter-layer transfer to a floating monolayer MoS$_2$ quantum well providing strong quantum confined photogating effect. The photodetector shows a responsivity of $4.4\times 10^6$ A/W at 30 fW incident power, outperforming photodetectors reported till date where graphene is used as light absorption material by several orders. In addition, the proposed photodetector exhibits an extremely low noise equivalent power ($N\!E\!P$) of $<4$ fW/$\sqrt{Hz}$ and a fast response ($\sim$ milliseconds) with zero reminiscent photocurrent. The findings are attractive towards the demonstration of graphene-based highly sensitive, fast, broadband photodetection technology.
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Submitted 19 August, 2019;
originally announced August 2019.
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A Non-parametric Statistical Approach on the Classification of Photometric Time Series Data
Authors:
Noble P. Abraham
Abstract:
This paper has been withdrawn by the author due to text overlap with arXiv:1102.5004, as well as omission of proper citations to arXiv:1110.4655 and arXiv:1111.0313
This paper has been withdrawn by the author due to text overlap with arXiv:1102.5004, as well as omission of proper citations to arXiv:1110.4655 and arXiv:1111.0313
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Submitted 9 December, 2011; v1 submitted 6 December, 2011;
originally announced December 2011.
