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Hybrid 2D-QD MoS2 PbSe Quantum Dot Broadband Photodetectors with High-Sensitivity and Room-Temperature Operation at 2.5 μm
Authors:
Biswajit Kundu,
Onur Özdemir,
Mariona Dalmases,
Gaurav Kumar,
Gerasimos Konstantatos
Abstract:
Broadband infrared photodetectors have profound importance in diverse applications including security, gas sensing, bioimaging, spectroscopy for food quality, and recycling, just to name a few. Yet, these applications can currently be served by expensive epitaxially grown photodetectors, limiting their market potential and social impact. The use of colloidal quantum dots (CQDs) and 2D-materials in…
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Broadband infrared photodetectors have profound importance in diverse applications including security, gas sensing, bioimaging, spectroscopy for food quality, and recycling, just to name a few. Yet, these applications can currently be served by expensive epitaxially grown photodetectors, limiting their market potential and social impact. The use of colloidal quantum dots (CQDs) and 2D-materials in a hybrid layout is an attractive alternative to design low-cost CMOS-compatible infrared photodetectors. However, the spectral sensitivity of these conventional hybrid detectors has been restricted to 2.1 um. Herein, we present a hybrid structure comprising MoS2 with PbSe CQDs to extend their sensitivity further towards the mid-wave infrared, up to 3 um. We achieve room temperature responsivity of 137.6 A/W and a detectivity of 7.7 10^10 Jones at 2.55 um owing to highly efficient photoexcited carrier separation at the interface of MoS2 and PbSe in combination with an oxide-coating to reduce dark current; the highest value yet for a PbSe based hybrid device. These findings strongly support the successful fabrication of hybrid devices which may pave the pathway for cost-effective, high performance, next-generation, novel photodetectors.
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Submitted 25 March, 2022;
originally announced March 2022.
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Single-Exciton Gain and Stimulated Emission across the Infrared Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots
Authors:
Sotirios Christodoulou,
Iñigo Ramiro,
Andreas Othonos,
Alberto Figueroba,
Mariona Dalmases,
Onur Özdemir,
Santanu Pradhan,
Grigorios Itskos,
Gerasimos Konstantatos
Abstract:
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics and silicon photonics. The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a unique o…
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Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics and silicon photonics. The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a unique opportunity as an optical gain medium in view of their tunable bandgap, solution processability and CMOS compatibility. The 8-fold degeneracy of infrared CQDs based on Pb-chalcogenides has hindered the demonstration of low-threshold optical gain and lasing, at room temperature. We demonstrate room-temperature, infrared, size-tunable, band-edge stimulated emission with linewidth of ~14 meV. Leveraging robust electronic doping and charge-exciton interactions in PbS CQD thin films, we reach gain threshold at the single exciton regime representing a four-fold reduction from the theoretical limit of an eight-fold degenerate system, with a net modal gain in excess of 100 cm-1.
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Submitted 21 September, 2021;
originally announced September 2021.
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High Sensitivity Hybrid PbS CQD-TMDC Photodetectors up to 2 $μ$m
Authors:
Onur Özdemir,
Iñigo Ramiro,
Shuchi Gupta,
Gerasimos Konstantatos
Abstract:
Recent approaches to develop infrared photodetectors characterized by high sensitivities, broadband spectral coverage, easy integration with silicon electronics and low cost have been based on hybrid structures of transition metal dichalcogenides (TMDCs) and PbS colloidal quantum dots (CQDs). However, to date, such photodetectors have been reported with high sensitivity up to 1.5 $μ$m. Here we ext…
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Recent approaches to develop infrared photodetectors characterized by high sensitivities, broadband spectral coverage, easy integration with silicon electronics and low cost have been based on hybrid structures of transition metal dichalcogenides (TMDCs) and PbS colloidal quantum dots (CQDs). However, to date, such photodetectors have been reported with high sensitivity up to 1.5 $μ$m. Here we extend the spectral coverage of this technology towards 2 $μ$m demonstrating for the first time compelling performance with responsivities 1400 A/W at 1.8 $μ$m with 1V bias and detectivities as high as $10^{12}$ Jones at room temperature. To do this we studied two TMDC materials as a carrier transport layer, tungsten disulfide (WS$_2$) and molybdenum disulfide (MoS$_2$) and demonstrate that WS$_2$ based hybrid photodetectors outperform those of MoS$_2$ due to a more adequate band alignment that favors carrier transfer from the CQDs.
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Submitted 25 March, 2020;
originally announced March 2020.
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Single-Exciton Gain and Stimulated Emission Across the Infrared Optical Telecom Band from Robust Heavily-doped PbS Colloidal Quantum Dots
Authors:
Sotirios Christodoulou,
Iñigo Ramiro,
Andreas Othonos,
Alberto Figueroba,
Mariona Dalmases,
Onur Özdemir,
Santanu Pradhan,
Grigorios Itskos,
Gerasimos Konstantatos
Abstract:
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a uni…
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Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics1 and silicon photonics2,3 . The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQD) offer a unique opportunity as an optical gain medium4 in view of their tunable bandgap, solution processability and CMOS compatibility. Their potential for narrower linewidths5 and the lower-than-bulk degeneracy6 has led to dramatic progress towards successful demonstration of optical gain4, stimulated emission7 and lasing8,9,10 in the visible part of spectrum utilizing CdSe-based CQDs. Infrared Pb-chalcogenide colloidal quantum dots however exhibit higher state degeneracy and as a result the demonstration of optical gain has imposed very high thresholds.11,12 Here we demonstrate room-temperature, infrared stimulated emission, tunable across the optical communication band, based on robust electronically doped PbS CQDs, that reach gain threshold at the single exciton regime, representing a four-fold reduction from the theoretical limit of an eight-fold degenerate system and two orders of magnitude lower than prior reports.
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Submitted 10 August, 2019;
originally announced August 2019.
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Coverage Enhancement for NLOS mmWave Links Using Passive Reflectors
Authors:
Wahab Khawaja,
Ozgur Ozdemir,
Yavuz Yapici,
Fatih Erden,
Martins Ezuma,
Ismail Guvenc
Abstract:
The future 5G networks are expected to use millimeter wave (mmWave) frequency bands to take advantage of large unused spectrum. However, due to the high path loss at mmWave frequencies, coverage of mmWave signals can get severely reduced, especially for non-line-of-sight (NLOS) scenarios as mmWave signals are severely attenuated when going through obstructions. In this work, we study the use of pa…
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The future 5G networks are expected to use millimeter wave (mmWave) frequency bands to take advantage of large unused spectrum. However, due to the high path loss at mmWave frequencies, coverage of mmWave signals can get severely reduced, especially for non-line-of-sight (NLOS) scenarios as mmWave signals are severely attenuated when going through obstructions. In this work, we study the use of passive metallic reflectors of different shapes/sizes to improve 28 GHz mmWave signal coverage for both indoor and outdoor NLOS scenarios. We quantify the gains that can be achieved in the link quality with metallic reflectors using measurements, analytical expressions, and ray tracing simulations. In particular, we provide an analytical model for the end-to-end received power in an NLOS scenario using reflectors of different shapes and sizes. For a given size of the flat metallic sheet reflector approaching to the size of incident plane waves, we show that the reflected received power for the NLOS link is same as line-of-sight (LOS)free space received power of the same link distance. Extensive results are provided to study impact of environmental features and reflector characteristics on NLOS link quality.
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Submitted 12 May, 2019;
originally announced May 2019.
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A model for Ni-63 source for betavoltaic application
Authors:
Abderrahmane Belghachi,
Kutsal Bozkurt,
Hassane Moughli,
Orhan Özdemir,
Benameur Amiri,
Abdelkrim Talhi
Abstract:
A mathematical model of Ni-63 source for betavoltaic batteries is presented, based on Monte Carlo calculation. Trajectories of beta particles are simulated in Ni-63 source until their escape or total energy dissipation. Analysis of the effect of physical and technological factors on the performance of a source is carried out. Special attention is given to self-absorption and substrate backscatteri…
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A mathematical model of Ni-63 source for betavoltaic batteries is presented, based on Monte Carlo calculation. Trajectories of beta particles are simulated in Ni-63 source until their escape or total energy dissipation. Analysis of the effect of physical and technological factors on the performance of a source is carried out. Special attention is given to self-absorption and substrate backscattering because of their impact on power emission. Addition of a protective layer diminishes the source emission because of further absorption. The model has been tested successfully for Ni-63/GaN structure.
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Submitted 7 July, 2019; v1 submitted 21 March, 2019;
originally announced March 2019.
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Charge Transport in Bifidobacterium animalis subsp. lactis BB-12 under the various Atmosphere
Authors:
K. Bozkurt,
C. Denktaş,
O. Özdemir,
A. Altındal,
Z. Avdan,
H. S. Bozkurt
Abstract:
The influence of relative humidity (RH) on quasistatic current-voltage ${(I-V)}$ characteristics of Bifidobacterium animalis subsp. lactis BB-12 thin layers have been studied for the first time. The value of electrical conductivity in 75$ \%$ RH was found to be in the order of 10$^{-7}$ (ohm cm)$^{-1}$ which was 10$^{6}$ orders of magnitude higher than that observed in dry atmosphere. Here we also…
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The influence of relative humidity (RH) on quasistatic current-voltage ${(I-V)}$ characteristics of Bifidobacterium animalis subsp. lactis BB-12 thin layers have been studied for the first time. The value of electrical conductivity in 75$ \%$ RH was found to be in the order of 10$^{-7}$ (ohm cm)$^{-1}$ which was 10$^{6}$ orders of magnitude higher than that observed in dry atmosphere. Here we also demonstrated that RH played a key role in hysteresis behaviour of the measured ${(I-V)}$ characteristics. FTIR measurements showed that under water moisture environment the associated bonds for amine and carboxyl group were greatly strengthened that was the source of number of free charge carries after ionization. The type of surface charge of Bifidobacterium animalis subsp. lactis BB-12 was found to be negative by zeta potential measurements, claiming that electrons were the charge carriers.
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Submitted 2 July, 2019; v1 submitted 30 January, 2019;
originally announced January 2019.
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Indoor Coverage Enhancement for mmWave Systems with Passive Reflectors: Measurements and Ray Tracing Simulations
Authors:
Wahab Khawaja,
Ozgur Ozdemir,
Yavuz Yapici,
Ismail Guvenc,
Martins Ezuma,
Yuichi Kakishimay
Abstract:
The future 5G networks are expected to use millimeter wave (mmWave) frequency bands, mainly due to the availability of large unused spectrum. However, due to high path loss at mmWave frequencies, coverage of mmWave signals can get severely reduced, especially for non-line-of-sight (NLOS) scenarios. In this work, we study the use of passive metallic reflectors of different shapes/sizes to improve m…
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The future 5G networks are expected to use millimeter wave (mmWave) frequency bands, mainly due to the availability of large unused spectrum. However, due to high path loss at mmWave frequencies, coverage of mmWave signals can get severely reduced, especially for non-line-of-sight (NLOS) scenarios. In this work, we study the use of passive metallic reflectors of different shapes/sizes to improve mmWave signal coverage for indoor NLOS scenarios. Software defined radio based mmWave transceiver platforms operating at 28 GHz are used for indoor measurements. Subsequently, ray tracing (RT) simulations are carried out in a similar environment using Remcom Wireless InSite software. The cumulative distribution functions of the received signal strength for the RT simulations in the area of interest are observed to be reasonably close with those obtained from the measurements. Our measurements and RT simulations both show that there is significant (on the order of 20 dB) power gain obtained with square metallic reflectors, when compared to no reflector scenario for an indoor corridor. We also observe that overall mmWave signal coverage can be improved utilizing reflectors of different shapes and orientations.
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Submitted 19 August, 2018;
originally announced August 2018.
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Coverage Enhancement for mmWave Communications using Passive Reflectors
Authors:
Wahab Khawaja,
Ozgur Ozdemir,
Yavuz Yapici,
Ismail Guvenc,
Yuichi Kakishima
Abstract:
Millimeter wave (mmWave) technology is expected to dominate the future 5G networks mainly due to large spectrum available at these frequencies. However, coverage deteriorates significantly at mmWave frequencies due to higher path loss, especially for the non-line-of-sight (NLOS) scenarios. In this work, we explore the use of passive reflectors for improving mmWave signal coverage in NLOS indoor ar…
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Millimeter wave (mmWave) technology is expected to dominate the future 5G networks mainly due to large spectrum available at these frequencies. However, coverage deteriorates significantly at mmWave frequencies due to higher path loss, especially for the non-line-of-sight (NLOS) scenarios. In this work, we explore the use of passive reflectors for improving mmWave signal coverage in NLOS indoor areas. Measurements are carried out using the PXI-based mmWave transceiver platforms from National Instruments operating at 28 GHz, and the results are compared with the outcomes of ray tracing (RT) simulations in a similar environment. For both the measurements and RT simulations, different shapes of metallic passive reflectors are used to observe the coverage (signal strength) statistics on a receiver grid in an NLOS area. For a square metallic sheet reflector of size 24 by 24 in and 33 by 33 in , we observe a significant increase in the received power in the NLOS region, with a median gain of 20 dB when compared to no reflector case. The cylindrical reflector shows more uniform coverage on the receiver grid as compared to flat reflectors that are more directional.
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Submitted 25 May, 2018; v1 submitted 22 March, 2018;
originally announced March 2018.
