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Sensitivity of nEXO to $^{136}$Xe Charged-Current Interactions: Background-free Searches for Solar Neutrinos and Fermionic Dark Matter
Authors:
G. Richardson,
B. G. Lenardo,
D. Gallacher,
R. Saldanha,
P. Acharya,
S. Al Kharusi,
A. Amy,
E. Angelico,
A. Anker,
I. J. Arnquist,
A. Atencio,
J. Bane,
V. Belov,
E. P. Bernard,
T. Bhatta,
A. Bolotnikov,
J. Breslin,
P. A. Breur,
J. P. Brodsky,
S. Bron,
E. Brown,
T. Brunner,
B. Burnell,
E. Caden,
G. F. Cao
, et al. (113 additional authors not shown)
Abstract:
We study the sensitivity of nEXO to solar neutrino charged-current interactions, $ν_e + ^{136}$Xe$\rightarrow ^{136}$Cs$^* + e^-$, as well as analogous interactions predicted by models of fermionic dark matter. Due to the recently observed low-lying isomeric states of $^{136}$Cs, these interactions will create a time-delayed coincident signal observable in the scintillation channel. Here we develo…
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We study the sensitivity of nEXO to solar neutrino charged-current interactions, $ν_e + ^{136}$Xe$\rightarrow ^{136}$Cs$^* + e^-$, as well as analogous interactions predicted by models of fermionic dark matter. Due to the recently observed low-lying isomeric states of $^{136}$Cs, these interactions will create a time-delayed coincident signal observable in the scintillation channel. Here we develop a detailed Monte Carlo of scintillation emission, propagation, and detection in the nEXO detector to model these signals under different assumptions about the timing resolution of the photosensor readout. We show this correlated signal can be used to achieve background discrimination on the order of $10^{-9}$, enabling nEXO to make background-free measurements of solar neutrinos above the reaction threshold of 0.668 MeV. We project that nEXO could measure the flux of CNO solar neutrinos with a statistical uncertainty of 25%, thus contributing a novel and competitive measurement towards addressing the solar metallicity problem. Additionally, nEXO could measure the mean energy of the $^7$Be neutrinos with a precision of $σ\leq 1.5$ keV and could determine the survival probability of $^{7}$Be and $pep$ solar $ν_e$ with precision comparable to state-of-the-art. These quantities are sensitive to the Sun's core temperature and to non-standard neutrino interactions, respectively. Furthermore, the strong background suppression would allow nEXO to search for for charged-current interactions of fermionic dark matter in the mass range $m_χ$ = $0.668$-$7$ MeV with a sensitivity up to three orders of magnitude better than current limits.
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Submitted 27 June, 2025;
originally announced June 2025.
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Observation of Time-Dependent Internal Charge Amplification in a Planar Germanium Detector at Cryogenic Temperature
Authors:
P. Acharya,
M. Fritts,
D. -M. Mei,
V. Mandic,
G. -J. Wang,
R. Mahapatra,
M. Platt
Abstract:
For the first time, time-dependent internal charge amplification through impact ionization has been observed in a planar germanium (Ge) detector operated at cryogenic temperature. In a time period of 30 and 45 minutes after applying a bias voltage, the charge energy corresponding to a baseline of the 59.54 keV $γ$ rays from a $^{241}$Am source is amplified for a short period of time and then decre…
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For the first time, time-dependent internal charge amplification through impact ionization has been observed in a planar germanium (Ge) detector operated at cryogenic temperature. In a time period of 30 and 45 minutes after applying a bias voltage, the charge energy corresponding to a baseline of the 59.54 keV $γ$ rays from a $^{241}$Am source is amplified for a short period of time and then decreases back to the baseline. The amplification of charge energy depends strongly on the applied positive bias voltage with drifting holes across the detector. No such phenomenon is visible with drifting electrons across the detector. We find that the observed charge amplification is dictated by the impact ionization of charged states, which has a strong correlation with impurity level and applied electric field. We analyze the dominant physics mechanisms that are responsible for the creation and the impact ionization of charged states. Our analysis suggests that the appropriate level of impurity in a Ge detector can enhance charge yield through the impact ionization of charged states to achieve extremely low-energy detection threshold ($<$ 10 meV) for MeV-scale dark matter searches if the charge amplification can be stabilized.
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Submitted 15 March, 2023; v1 submitted 29 November, 2022;
originally announced November 2022.
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Investigation of the Electrical Conduction Mechanisms in P-type Amorphous Germanium (a-Ge) Used as a-Ge Contacts for Ge Detectors
Authors:
S. Bhattarai,
R. Panth,
W. -Z. Wei,
H. Mei,
D. -M. Mei,
M. S. Raut,
P. Acharya,
W. -J. Wang
Abstract:
Electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature-dependent hopping distance and hopping energy are…
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Electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature-dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $2.13^{-0.05}_{+0.07} A^\circ$ to $5.07^{-0.83}_{+2.58}A^\circ$, depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.
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Submitted 7 September, 2020; v1 submitted 17 February, 2020;
originally announced February 2020.
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Characterization of High-Purity Germanium (Ge) Crystals for Developing Novel Ge Detectors
Authors:
M. -S. Raut,
H. Mei,
D. -M. Mei,
S. Bhattarai,
W. -Z. Wei,
R. Panda,
P. Acharya,
G. -J. Wang
Abstract:
High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier concentration, the Hall mobility, and the electrical resistivity. The reported values have a strong dependence on the size of the ohmic contacts and the geometry of the…
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High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier concentration, the Hall mobility, and the electrical resistivity. The reported values have a strong dependence on the size of the ohmic contacts and the geometry of the samples used in conducting the Hall Effect measurements. We conduct a systematic study using four samples cut from the same location in a HPGe crystal made into different sized ohmic contacts or different geometries to study the variation of the measured parameters from the Hall Effect system. The results are compared to the C-V measurements provided by the Ge detector made from the same crystal. We report the systematic errors involved with the Hall Effect system and find a reliable technique that minimizes the systematic error to be only a few percent from the Hall Effect measurements.
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Submitted 22 July, 2020; v1 submitted 17 February, 2020;
originally announced February 2020.
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Impact of Charge Trapping on the Energy Resolution of Ge Detectors for Rare-Event Physics Searches
Authors:
D. -M. Mei,
R. B Mukund,
W. -Z. Wei,
R. Panth,
J. Liu,
H. Mei,
Y. -Y. Li,
P. Acharya,
S. Bhattarai,
K. Kooi,
M-S. Raut,
X. -S. Sun,
A. Kirkvold,
K. -M. Dong,
X. -H. Meng,
G. -J. Wang,
G. Yang
Abstract:
Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of cha…
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Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of charge trapping length is derived from the Shockley-Ramo theorem. Furthermore, we develop a model that correlates the energy resolution with the charge collection efficiency. This model is then applied to the experimental data. As a result, charge collection efficiency and charge trapping length are determined accordingly. Utilizing the Lax model (further developed by CDMS collaborators), the absolute impurity levels are determined for nine detectors. The knowledge of these parameters when combined with other traits such as the Fano factor serve as a reliable indicator of the intrinsic nature of charge trapping within the crystals. We demonstrate that electron trapping is more severe than hole trapping in a p-type detector and the charge collection efficiency depends on the absolute impurity level of the Ge crystal when an adequate bias voltage is applied to the detector. Negligible charge trapping is found when the absolute impurity level is less than 1.0$\times$10$^{11}/$cm$^{3}$ for collecting electrons and 2.0$\times$10$^{11}/$cm$^{3}$ for collecting holes.
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Submitted 28 April, 2020; v1 submitted 12 September, 2019;
originally announced September 2019.
