Showing 1–6 of 6 results for author: Mekkaoui, A

Measurements of Single Event Upset in ATLAS IBL

Authors: G. Balbi, M. Barbero, R. Beccherle, M. Bindi, P. Breugnon, P. Butti, D. Cinca, J. Dickinson, D. Ferrere, D. Fougeron, M. Garcia-Sciveres, J. Garcia Pascual, A. Gaudiello, C. Gemme, N. Giangiacomi, T. Hemperek, L. Jeanty, O. Kepka, M. Kocian, K. Lantzsch, P. Liu, C. Martin, A. Mekkaoui, M. Menouni, K. Potamianos , et al. (3 additional authors not shown)

Abstract: Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulati… ▽ More Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented. △ Less

Submitted 29 April, 2020; originally announced April 2020.

Comments: 30 pages with 32 figures

Production and Integration of the ATLAS Insertable B-Layer

Authors: B. Abbott, J. Albert, F. Alberti, M. Alex, G. Alimonti, S. Alkire, P. Allport, S. Altenheiner, L. Ancu, E. Anderssen, A. Andreani, A. Andreazza, B. Axen, J. Arguin, M. Backhaus, G. Balbi, J. Ballansat, M. Barbero, G. Barbier, A. Bassalat, R. Bates, P. Baudin, M. Battaglia, T. Beau, R. Beccherle , et al. (352 additional authors not shown)

Abstract: During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and i… ▽ More During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector. △ Less

Submitted 6 June, 2018; v1 submitted 2 March, 2018; originally announced March 2018.

Comments: 90 pages in total. Author list: ATLAS IBL Collaboration, starting page 2. 69 figures, 20 tables. Published in Journal of Instrumentation. All figures available at: https://atlas.web.cern.ch/Atlas/GROUPS/PHYSICS/PLOTS/PIX-2018-001

Journal ref: Journal of Instrumentation JINST 13 T05008 (2018)

Single Event Effects in the Pixel readout chip for BTeV

Authors: G. Chiodini, J. A. Appel, G. Cardoso, D. C. Christian, M. R. Coluccia, J. Hoff, S. W. Kwan, A. Mekkaoui, R. Yarema, S. Zimmermann

Abstract: In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 um CMOS processes following radiation tolerant d… ▽ More In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 um CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level. △ Less

Submitted 29 November, 2001; originally announced November 2001.

Comments: 15 pages, 6 Postscript figures

Report number: FERMILAB-Conf-01/369-E

Journal ref: Nucl.Instrum.Meth.A501:183-188,2001

Performance of prototype BTeV silicon pixel detectors in a high energy pion beam

Authors: J. A. Appel, M. Artuso, J. N. Butler, G. Cancelo, G. Cardoso, H. Cheung, G. Chiodini, D. C. Christian, A. Colautti, R. Coluccia, M. Di Corato, E. E. Gottschalk, B. K. Hall, J. Hoff, P. A. Kasper, R. Kutschke, S. W. Kwan, A. Mekkaoui, D. Menasce, C. Newsom, S. Sala, R. Yarema, J. C. Wang, S. Zimmerman

Abstract: The silicon pixel vertex detector is a key element of the BTeV spectrometer. Sensors bump-bonded to prototype front-end devices were tested in a high energy pion beam at Fermilab. The spatial resolution and occupancies as a function of the pion incident angle were measured for various sensor-readout combinations. The data are compared with predictions from our Monte Carlo simulation and very goo… ▽ More The silicon pixel vertex detector is a key element of the BTeV spectrometer. Sensors bump-bonded to prototype front-end devices were tested in a high energy pion beam at Fermilab. The spatial resolution and occupancies as a function of the pion incident angle were measured for various sensor-readout combinations. The data are compared with predictions from our Monte Carlo simulation and very good agreement is found. △ Less

Submitted 8 August, 2001; v1 submitted 7 August, 2001; originally announced August 2001.

Comments: 24 pages, 20 figures

Report number: Fermilab-pub-01/229-e

Journal ref: Nucl.Instrum.Meth.A485:411-425,2002

Beam Test of BTeV Pixel Detectors

Authors: J. C. Wang, J. A. Appel, M. Artuso, J. N. Butler, G. Cancelo, G. Cardoso, H. Cheung, G. Chiodini, D. C. Christian, A. Colautti, R. Coluccia, M. Di Corato, E. E. Gottschalk, B. K. Hall, J. Hoff, P. A. Kasper, R. Kutschke, S. W. Kwan, A. Mekkaoui, D. Menasce, C. Newsom, S. Sala, R. Yarema S. Zimmermann

Abstract: The silicon pixel vertex detector is one of the key elements of the BTeV spectrometer. Detector prototypes were tested in a beam at Fermilab. We report here on the measured spatial resolution as a function of the incident angles for different sensor-readout electronics combinations. We compare the results with predictions from our Monte Carlo simulation. The silicon pixel vertex detector is one of the key elements of the BTeV spectrometer. Detector prototypes were tested in a beam at Fermilab. We report here on the measured spatial resolution as a function of the incident angles for different sensor-readout electronics combinations. We compare the results with predictions from our Monte Carlo simulation. △ Less

Submitted 21 November, 2000; originally announced November 2000.

Comments: 7 pages, 5 figures, Invited talk given by J.C. Wang at "Vertex 2000, 9th International Workshop on Vertex Detectors", Michigan, Sept 10-15, 2000. To be published in NIM A

Journal ref: Nucl.Instrum.Meth.A473:119-123,2001

Beam Test Results of the BTeV Silicon Pixel Detector

Authors: G. Chiodini, J. A. Appel, M. Artuso, J. N. Butler, G. Cardoso, H. Cheung, D. C. Christian, A. Colautti, R. Coluccia, M. Di Corato, E. E. Gottschalk, B. K. Hall, J. Hoff, P. A. Kasper, R. Kutschke, S. W. Kwan, A. Mekkaoui, D. Menasce, C. Newsom, S. Sala, R. Yarema, J. C. Wang, S. Zimmermann

Abstract: The results of the BTeV silicon pixel detector beam test carried out at Fermilab in 1999-2000 are reported. The pixel detector spatial resolution has been studied as a function of track inclination, sensor bias, and readout threshold. The results of the BTeV silicon pixel detector beam test carried out at Fermilab in 1999-2000 are reported. The pixel detector spatial resolution has been studied as a function of track inclination, sensor bias, and readout threshold. △ Less

Submitted 7 September, 2000; originally announced September 2000.

Comments: 8 pages of text, 8 figures, Proceedings paper of Pixel 2000: International Workshop on Semiconductor Pixel Detectors for Particles and X-Rays, Genova, June 5-8, 2000

Journal ref: Nucl.Instrum.Meth.A465:125-130,2000