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A Starry Byte -- proton beam measurements of single event upsets and other radiation effects in ABCStar ASIC Versions 0 and 1 for the ITk strip tracker
Authors:
M. J. Basso,
J. Fernandez-Tejero,
B. J. Gallop,
G. Greig,
J. J. John,
P. T. Keener,
K. Krizka,
P. V. Leitao,
B. Norman,
P. W. Phillips,
L. Poley,
C. Sawyer,
T. L. Stack,
S. Stucci,
D. A. Trischuk,
M. Warren
Abstract:
Single Event Effects (SEEs) - predominately bit-flips in electronics caused by particle interactions - are a major concern for ASICs operated in high radiation environments such as ABCStar ASICs, which are designed to be used in the future ATLAS ITk strip tracker. The chip design is therefore optimised to protect it from SEEs by implementing triplication techniques such as Triple Modular Redundanc…
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Single Event Effects (SEEs) - predominately bit-flips in electronics caused by particle interactions - are a major concern for ASICs operated in high radiation environments such as ABCStar ASICs, which are designed to be used in the future ATLAS ITk strip tracker. The chip design is therefore optimised to protect it from SEEs by implementing triplication techniques such as Triple Modular Redundancy (TMR). In order to verify the radiation protection mechanisms of the chip design, the cross-section for Single Event Upsets (SEUs), a particular class of SEEs, is measured by exposing the chip to high-intensity particle beams while monitoring it for observed SEUs. This study presents the setup, the performed measurements, and the results from SEU tests performed using the latest version of the ABCStar ASIC (ABCStar V1) using a 480 MeV proton beam.
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Submitted 23 March, 2022;
originally announced March 2022.
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The ABC130 barrel module prototyping programme for the ATLAS strip tracker
Authors:
Luise Poley,
Craig Sawyer,
Sagar Addepalli,
Anthony Affolder,
Bruno Allongue,
Phil Allport,
Eric Anderssen,
Francis Anghinolfi,
Jean-François Arguin,
Jan-Hendrik Arling,
Olivier Arnaez,
Nedaa Alexandra Asbah,
Joe Ashby,
Eleni Myrto Asimakopoulou,
Naim Bora Atlay,
Ludwig Bartsch,
Matthew J. Basso,
James Beacham,
Scott L. Beaupré,
Graham Beck,
Carl Beichert,
Laura Bergsten,
Jose Bernabeu,
Prajita Bhattarai,
Ingo Bloch
, et al. (224 additional authors not shown)
Abstract:
For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000…
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For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototyping programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-25) and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototyping program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.
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Submitted 7 September, 2020;
originally announced September 2020.
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The Physics of the B Factories
Authors:
A. J. Bevan,
B. Golob,
Th. Mannel,
S. Prell,
B. D. Yabsley,
K. Abe,
H. Aihara,
F. Anulli,
N. Arnaud,
T. Aushev,
M. Beneke,
J. Beringer,
F. Bianchi,
I. I. Bigi,
M. Bona,
N. Brambilla,
J. B rodzicka,
P. Chang,
M. J. Charles,
C. H. Cheng,
H. -Y. Cheng,
R. Chistov,
P. Colangelo,
J. P. Coleman,
A. Drutskoy
, et al. (2009 additional authors not shown)
Abstract:
This work is on the Physics of the B Factories. Part A of this book contains a brief description of the SLAC and KEK B Factories as well as their detectors, BaBar and Belle, and data taking related issues. Part B discusses tools and methods used by the experiments in order to obtain results. The results themselves can be found in Part C.
Please note that version 3 on the archive is the auxiliary…
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This work is on the Physics of the B Factories. Part A of this book contains a brief description of the SLAC and KEK B Factories as well as their detectors, BaBar and Belle, and data taking related issues. Part B discusses tools and methods used by the experiments in order to obtain results. The results themselves can be found in Part C.
Please note that version 3 on the archive is the auxiliary version of the Physics of the B Factories book. This uses the notation alpha, beta, gamma for the angles of the Unitarity Triangle. The nominal version uses the notation phi_1, phi_2 and phi_3. Please cite this work as Eur. Phys. J. C74 (2014) 3026.
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Submitted 31 October, 2015; v1 submitted 24 June, 2014;
originally announced June 2014.
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ISIS2: Pixel Sensor with Local Charge Storage for ILC Vertex Detector
Authors:
Yiming Li,
Chris Damerell,
Rui Gao,
Rhorry Gauld,
Jaya John John,
Peter Murray,
Andrei Nomerotski,
Konstantin Stefanov,
Steve Thomas,
Helena Wilding,
Zhige Zhang
Abstract:
ISIS (In-situ Storage Imaging Sensor) is a novel CMOS sensor with multiple charge storage capability developed for the ILC vertex detector by the Linear Collider Flavour Identification (LCFI) collaboration. This paper reports test results for ISIS2, the second generation of ISIS sensors implemented in a 0.18 micron CMOS process. The local charge storage and charge transfer were unambiguously demon…
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ISIS (In-situ Storage Imaging Sensor) is a novel CMOS sensor with multiple charge storage capability developed for the ILC vertex detector by the Linear Collider Flavour Identification (LCFI) collaboration. This paper reports test results for ISIS2, the second generation of ISIS sensors implemented in a 0.18 micron CMOS process. The local charge storage and charge transfer were unambiguously demonstrated.
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Submitted 14 July, 2010; v1 submitted 18 June, 2010;
originally announced June 2010.
