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Roadmap to Neuromorphic Computing with Emerging Technologies
Authors:
Adnan Mehonic,
Daniele Ielmini,
Kaushik Roy,
Onur Mutlu,
Shahar Kvatinsky,
Teresa Serrano-Gotarredona,
Bernabe Linares-Barranco,
Sabina Spiga,
Sergey Savelev,
Alexander G Balanov,
Nitin Chawla,
Giuseppe Desoli,
Gerardo Malavena,
Christian Monzio Compagnoni,
Zhongrui Wang,
J Joshua Yang,
Ghazi Sarwat Syed,
Abu Sebastian,
Thomas Mikolajick,
Beatriz Noheda,
Stefan Slesazeck,
Bernard Dieny,
Tuo-Hung,
Hou,
Akhil Varri
, et al. (28 additional authors not shown)
Abstract:
The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently utilized technologies, providing an overview of emerging technologies, addressing material challenges, exploring novel computing concepts, and finally examining the maturity level of emerging technologies while determining t…
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The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently utilized technologies, providing an overview of emerging technologies, addressing material challenges, exploring novel computing concepts, and finally examining the maturity level of emerging technologies while determining the next essential steps for their advancement.
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Submitted 5 July, 2024; v1 submitted 2 July, 2024;
originally announced July 2024.
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C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory
Authors:
Mor M. Dahan,
Evelyn T. Breyer,
Stefan Slesazeck,
Thomas Mikolajick,
Shahar Kvatinsky
Abstract:
Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named crossed-AND (C-AND), in which each storage cell consists of a single ferroelectric transistor. The write operation is performed using different write schemes and differe…
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Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named crossed-AND (C-AND), in which each storage cell consists of a single ferroelectric transistor. The write operation is performed using different write schemes and different absolute voltages, to account for the asymmetric switching voltages of the FeFET. It enables writing an entire wordline in two consecutive cycles and prevents current and power through the channel of the transistor. During the read operation, the current and power are mostly sensed at a single selected device in each column. The read scheme additionally enables reading an entire word without read errors, even along long bitlines. Our Simulations demonstrate that, in comparison to the previously proposed AND architecture, the C-AND architecture diminishes read errors, reduces write disturbs, enables the usage of longer bitlines, and saves up to 2.92X in memory cell area.
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Submitted 24 May, 2022;
originally announced May 2022.
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A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices
Authors:
Shyam Narayanan,
Erika Covi,
Viktor Havel,
Charlotte Frenkel,
Suzanne Lancaster,
Quang Duong,
Stefan Slesazeck,
Thomas Mikolajick,
Melika Payvand,
Giacomo Indiveri
Abstract:
Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth of ferroelectric domains. Since this has a strong dependence on both pulse width and voltage amplitude, it is important to use precise pulsing schemes for a tho…
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Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth of ferroelectric domains. Since this has a strong dependence on both pulse width and voltage amplitude, it is important to use precise pulsing schemes for a thorough characterization of their behaviour. In this work, we present an on-chip 120 dB programmable range pulse generator, that can generate pulse widths ranging from 10ns to 10ms $\pm$2.5% which eliminates the RLC bottleneck in the device characterisation setup. We describe the pulse generator design and show how the pulse width can be tuned with high accuracy, using Digital to Analog converters. Finally, we present experimental results measured from the circuit, fabricated using a standard 180nm CMOS technology.
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Submitted 8 February, 2022;
originally announced February 2022.
