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Spike-based Neuromorphic Computing for Next-Generation Computer Vision
Authors:
Md Sakib Hasan,
Catherine D. Schuman,
Zhongyang Zhang,
Tauhidur Rahman,
Garrett S. Rose
Abstract:
Neuromorphic Computing promises orders of magnitude improvement in energy efficiency compared to traditional von Neumann computing paradigm. The goal is to develop an adaptive, fault-tolerant, low-footprint, fast, low-energy intelligent system by learning and emulating brain functionality which can be realized through innovation in different abstraction layers including material, device, circuit,…
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Neuromorphic Computing promises orders of magnitude improvement in energy efficiency compared to traditional von Neumann computing paradigm. The goal is to develop an adaptive, fault-tolerant, low-footprint, fast, low-energy intelligent system by learning and emulating brain functionality which can be realized through innovation in different abstraction layers including material, device, circuit, architecture and algorithm. As the energy consumption in complex vision tasks keep increasing exponentially due to larger data set and resource-constrained edge devices become increasingly ubiquitous, spike-based neuromorphic computing approaches can be viable alternative to deep convolutional neural network that is dominating the vision field today. In this book chapter, we introduce neuromorphic computing, outline a few representative examples from different layers of the design stack (devices, circuits and algorithms) and conclude with a few exciting applications and future research directions that seem promising for computer vision in the near future.
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Submitted 16 March, 2024; v1 submitted 14 October, 2023;
originally announced October 2023.
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Reimagining Sense Amplifiers: Harnessing Phase Transition Materials for Current and Voltage Sensing
Authors:
Md Mazharul Islam,
Shamiul Alam,
Mohammad Adnan Jahangir,
Garrett S. Rose,
Suman Datta,
Vijaykrishnan Narayanan,
Sumeet Kumar Gupta,
Ahmedullah Aziz
Abstract:
Energy-efficient sense amplifier (SA) circuits are essential for reliable detection of stored memory states in emerging memory systems. In this work, we present four novel sense amplifier (SA) topologies based on phase transition material (PTM) tailored for non-volatile memory applications. We utilize the abrupt switching and volatile hysteretic characteristics of PTMs which enables efficient and…
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Energy-efficient sense amplifier (SA) circuits are essential for reliable detection of stored memory states in emerging memory systems. In this work, we present four novel sense amplifier (SA) topologies based on phase transition material (PTM) tailored for non-volatile memory applications. We utilize the abrupt switching and volatile hysteretic characteristics of PTMs which enables efficient and fast sensing operation in our proposed SA topologies. We provide comprehensive details of their functionality and assess how process variations impact their performance metrics. Our proposed sense amplifier topologies manifest notable performance enhancement. We achieve a ~67% reduction in sensing delay and a ~80% decrease in sensing power for current sensing. For voltage sensing, we achieve a ~75% reduction in sensing delay and a ~33% decrease in sensing power. Moreover, the proposed SA topologies exhibit improved variation robustness compared to conventional SAs. We also scrutinize the dependence of transistor mirroring window and PTM transition voltages on several device parameters to determine the optimum operating conditions and stance of tunability for each of the proposed SA topologies.
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Submitted 30 August, 2023;
originally announced August 2023.
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Design of an Enhanced Reconfigurable Chaotic Oscillator using G4FET-NDR Based Discrete Map
Authors:
Md Sakib Hasan,
Aysha S. Shanta,
Partha Sarathi Paul,
Maisha Sadia,
Md Badruddoja Majumder,
Garrett S. Rose
Abstract:
In this paper, a novel chaotic map is introduced usinga voltage controlled negative differential resistance (NDR) circuitcomposed of ann-channel and ap-channel silicon-on-insulator(SOI) four-gate transistor (G4FET). The multiple gates of theG4FET are leveraged to create a discrete chaotic map with threebifurcation parameters. The three tunable parameters are thegain of a transimpedance amplifier (…
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In this paper, a novel chaotic map is introduced usinga voltage controlled negative differential resistance (NDR) circuitcomposed of ann-channel and ap-channel silicon-on-insulator(SOI) four-gate transistor (G4FET). The multiple gates of theG4FET are leveraged to create a discrete chaotic map with threebifurcation parameters. The three tunable parameters are thegain of a transimpedance amplifier (TIA), top-gate voltage ofn-channel G4FET, and top-gate voltage ofp-channel G4FET. Twomethods are proposed for building chaotic oscillators using thisdiscrete map. The effect of altering bifurcation parameters onchaotic operation is illustrated using bifurcation diagrams andLyapunov exponent. A design methodology for building flexibleand reconfigurable logic gate is outlined and the consequentenhancement in functionality space caused by the existence ofthree independent bifurcation parameters is demonstrated andcompared with previous work.
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Submitted 1 January, 2021;
originally announced January 2021.
