Epitaxial high-K AlBN barrier GaN HEMTs
Authors:
Chandrashekhar Savant,
Thai-Son Nguyen,
Kazuki Nomoto,
Saurabh Vishwakarma,
Siyuan Ma,
Akshey Dhar,
Yu-Hsin Chen,
Joseph Casamento,
David J. Smith,
Huili Grace Xing,
Debdeep Jena
Abstract:
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors that exhibit current densities of more than 0.25 A/mm, clean current saturation, a low pinch-off voltage of -0.43 V, and a peak transconductance of 0.14 S/mm.…
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We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors that exhibit current densities of more than 0.25 A/mm, clean current saturation, a low pinch-off voltage of -0.43 V, and a peak transconductance of 0.14 S/mm. Transistor performance in this preliminary realization is limited by the contact resistance. Capacitance-voltage measurements reveal that introducing 7 % B in the epitaxial AlBN barrier on GaN boosts the relative dielectric constant of AlBN to 16, higher than the AlN dielectric constant of 9. Epitaxial high-K barrier AlBN/GaN HEMTs can thus extend performance beyond the capabilities of current GaN transistors.
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Submitted 26 February, 2025;
originally announced February 2025.
