OpenGCRAM: An Open-Source Gain Cell Compiler Enabling Design-Space Exploration for AI Workloads
Authors:
Xinxin Wang,
Lixian Yan,
Shuhan Liu,
Luke Upton,
Zhuoqi Cai,
Yiming Tan,
Shengman Li,
Koustav Jana,
Peijing Li,
Jesse Cirimelli-Low,
Thierry Tambe,
Matthew Guthaus,
H. -S. Philip Wong
Abstract:
Gain Cell memory (GCRAM) offers higher density and lower power than SRAM, making it a promising candidate for on-chip memory in domain-specific accelerators. To support workloads with varying traffic and lifetime metrics, GCRAM also offers high bandwidth, ultra low leakage power and a wide range of retention times, which can be adjusted through transistor design (like threshold voltage and channel…
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Gain Cell memory (GCRAM) offers higher density and lower power than SRAM, making it a promising candidate for on-chip memory in domain-specific accelerators. To support workloads with varying traffic and lifetime metrics, GCRAM also offers high bandwidth, ultra low leakage power and a wide range of retention times, which can be adjusted through transistor design (like threshold voltage and channel material) and on-the-fly by changing the operating voltage. However, designing and optimizing GCRAM sub-systems can be time-consuming. In this paper, we present OpenGCRAM, an open-source GCRAM compiler capable of generating GCRAM bank circuit designs and DRC- and LVS-clean layouts for commercially available foundry CMOS, while also providing area, delay, and power simulations based on user-specified configurations (e.g., word size and number of words). OpenGCRAM enables fast, accurate, customizable, and optimized GCRAM block generation, reduces design time, ensure process compliance, and delivers performance-tailored memory blocks that meet diverse application requirements.
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Submitted 14 July, 2025;
originally announced July 2025.
