Multi-state MRAM cells for hardware neuromorphic computing
Authors:
Piotr Rzeszut,
Jakub Chęciński,
Ireneusz Brzozowski,
Sławomir Ziętek,
Witold Skowroński,
Tomasz Stobiecki
Abstract:
Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including high-frequency electronics, energy harvesting or random number generators. Recently, MTJs have been also proposed in designs of a new platforms for unconventional o…
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Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including high-frequency electronics, energy harvesting or random number generators. Recently, MTJs have been also proposed in designs of a new platforms for unconventional or bio-inspired computing. In the present work, it is shown that serially connected MTJs forming a multi-state memory cell can be used in a hardware implementation of a neural computing device. A behavioral model of the multi-cell is proposed based on the experimentally determined MTJ parameters. The main purpose of the mutli-cell is the formation of the quantized weights of the network, which can be programmed using the proposed electronic circuit. Mutli-cells are connected to CMOS-based summing amplifier and sigmoid function generator, forming an artificial neuron. The operation of the designed network is tested using a recognition of the hand-written digits in 20x20 pixel matrix and shows detection ratio comparable to the software algorithm, using the weight stored in a multi-cell consisting of four MTJs or more.
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Submitted 5 February, 2021;
originally announced February 2021.
