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Physics-Based Models for Magneto-Electric Spin-Orbit Logic Circuits
Authors:
Hai Li,
Dmitri E. Nikonov,
Chia-Ching Lin,
Kerem Camsari,
Yu-Ching Liao,
Chia-Sheng Hsu,
Azad Naeemi,
Ian A. Young
Abstract:
Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their inter-conversion is required. Here we present physics-based device models based on 4x4 matrices for the spin-orbit coupling part of the magneto-electric spin-orbit (MESO…
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Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their inter-conversion is required. Here we present physics-based device models based on 4x4 matrices for the spin-orbit coupling part of the magneto-electric spin-orbit (MESO) device. Also, a more rigorous physics model of ferroelectric and magnetoelectric switching of ferromagnets, based on Landau-Lifshitz-Gilbert (LLG) and Landau-Khalatnikov (LK) equations, is presented. With the combined model implemented in a SPICE circuit simulator environment, simulation results were obtained which show feasibility of MESO implementation and functional operation of buffers, oscillators, and majority gates.
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Submitted 21 October, 2021;
originally announced October 2021.
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A Coupled CMOS Oscillator Array for 8ns and 55pJ Inference in Convolutional Neural Networks
Authors:
D. E. Nikonov,
P. Kurahashi,
J. S. Ayers,
H. -J. Lee,
Y. Fan,
I. A. Young
Abstract:
Oscillator neural networks (ONN) based on arrays of 26 CMOS ring oscillators designed and fabricated. ONN are used for inference of dot products with image fragments and kernels necessary for convolutional neural networks. The inputs are encoded as frequency shifts of oscillators using current DACs. Degree of match (DOM) is determined from oscillators synchronization. Measurements demonstrate high…
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Oscillator neural networks (ONN) based on arrays of 26 CMOS ring oscillators designed and fabricated. ONN are used for inference of dot products with image fragments and kernels necessary for convolutional neural networks. The inputs are encoded as frequency shifts of oscillators using current DACs. Degree of match (DOM) is determined from oscillators synchronization. Measurements demonstrate high correlation of DOM and dot products. Inference requires the time of 8ns and energy of 55pJ.
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Submitted 25 October, 2019;
originally announced October 2019.
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Convolution Inference via Synchronization of a Coupled CMOS Oscillator Array
Authors:
D. E. Nikonov,
P. Kurahashi,
J. S. Ayers,
H. -J. Lee,
Y. Fan,
I. A. Young
Abstract:
Oscillator neural networks (ONN) are a promising hardware option for artificial intelligence. With an abundance of theoretical treatments of ONNs, few experimental implementations exist to date. In contrast to prior publications of only building block functionality, we report a practical experimental demonstration of neural computing using an ONN. The arrays contain 26 CMOS ring oscillators in the…
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Oscillator neural networks (ONN) are a promising hardware option for artificial intelligence. With an abundance of theoretical treatments of ONNs, few experimental implementations exist to date. In contrast to prior publications of only building block functionality, we report a practical experimental demonstration of neural computing using an ONN. The arrays contain 26 CMOS ring oscillators in the GHz range of frequencies tuned by image data and filters. Synchronization of oscillators results in an analog output voltage approximating convolution neural network operation.
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Submitted 25 October, 2019;
originally announced October 2019.
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Benchmarking Physical Performance of Neural Inference Circuits
Authors:
Dmitri E. Nikonov,
Ian A. Young
Abstract:
Numerous neural network circuits and architectures are presently under active research for application to artificial intelligence and machine learning. Their physical performance metrics (area, time, energy) are estimated. Various types of neural networks (artificial, cellular, spiking, and oscillator) are implemented with multiple CMOS and beyond-CMOS (spintronic, ferroelectric, resistive memory)…
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Numerous neural network circuits and architectures are presently under active research for application to artificial intelligence and machine learning. Their physical performance metrics (area, time, energy) are estimated. Various types of neural networks (artificial, cellular, spiking, and oscillator) are implemented with multiple CMOS and beyond-CMOS (spintronic, ferroelectric, resistive memory) devices. A consistent and transparent methodology is proposed and used to benchmark this comprehensive set of options across several application cases. Promising architecture/device combinations are identified.
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Submitted 12 July, 2019;
originally announced July 2019.
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Clocked Magnetostriction-Assisted Spintronic Device Design and Simulation
Authors:
Rouhollah Mousavi Iraei,
Nickvash Kani,
Sourav Dutta,
Dmitri E. Nikonov,
Sasikanth Manipatruni,
Ian A. Young,
John T. Heron,
Azad Naeemi
Abstract:
We propose a heterostructure device comprised of magnets and piezoelectrics that significantly improves the delay and the energy dissipation of an all-spin logic (ASL) device. This paper studies and models the physics of the device, illustrates its operation, and benchmarks its performance using SPICE simulations. We show that the proposed device maintains low voltage operation, non-reciprocity, n…
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We propose a heterostructure device comprised of magnets and piezoelectrics that significantly improves the delay and the energy dissipation of an all-spin logic (ASL) device. This paper studies and models the physics of the device, illustrates its operation, and benchmarks its performance using SPICE simulations. We show that the proposed device maintains low voltage operation, non-reciprocity, non-volatility, cascadability, and thermal reliability of the original ASL device. Moreover, by utilizing the deterministic switching of a magnet from the saddle point of the energy profile, the device is more efficient in terms of energy and delay and is robust to thermal fluctuations. The results of simulations show that compared to ASL devices, the proposed device achieves 21x shorter delay and 27x lower energy dissipation per bit for a 32-bit arithmetic-logic unit (ALU).
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Submitted 22 November, 2017;
originally announced November 2017.
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Shannon-inspired Statistical Computing to Enable Spintronics
Authors:
Ameya D. Patil,
Sasikanth Manipatruni,
Dmitri Nikonov,
Ian A. Young,
Naresh R. Shanbhag
Abstract:
Modern computing systems based on the von Neumann architecture are built from silicon complementary metal oxide semiconductor (CMOS) transistors that need to operate under practically error free conditions with 1 error in $10^{15}$ switching events. The physical dimensions of CMOS transistors have scaled down over the past five decades leading to exponential increases in functional density and ene…
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Modern computing systems based on the von Neumann architecture are built from silicon complementary metal oxide semiconductor (CMOS) transistors that need to operate under practically error free conditions with 1 error in $10^{15}$ switching events. The physical dimensions of CMOS transistors have scaled down over the past five decades leading to exponential increases in functional density and energy consumption. Today, the energy and delay reductions from scaling have stagnated, motivating the search for a CMOS replacement. Of these, spintronics offers a path for enhancing the functional density and scaling the energy down to fundamental thermodynamic limits of 100kT to 1000kT. However, spintronic devices exhibit high error rates of 1 in 10 or more when operating at these limits, rendering them incompatible with deterministic nature of the von Neumann architecture. We show that a Shannon-inspired statistical computing framework can be leveraged to design a computer made from such stochastic spintronic logic gates to provide a computational accuracy close to that of a deterministic computer. This extraordinary result allowing a $10^{13}$ fold relaxation in acceptable error rates is obtained by engineering the error distribution coupled with statistical error compensation.
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Submitted 19 February, 2017;
originally announced February 2017.
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Low-power Spin Valve Logic using Spin-transfer Torque with Automotion of Domain Walls
Authors:
Sou-Chi Chang,
Sasikanth Manipatruni,
Dmitri E. Nikonov,
Ian A. Young,
Azad Naeemi
Abstract:
A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM) wires served as interconnects, where DW automotion is used to propagate the information from one device to another. The non-reciprocity of both device and inte…
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A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM) wires served as interconnects, where DW automotion is used to propagate the information from one device to another. The non-reciprocity of both device and interconnect is realized by sizing different contact areas at the input and the output as well as enhancing the local damping mechanism. The proposed logic is suitable for scaling due to a high energy barrier provided by a long FM wire. Compared to the scheme based on non-local spin valves (NLSVs) in the previous proposal, the devices can be operated at lower current density due to utilizing all injected spins for local magnetization reversals, and thus improve both energy efficiency and resistance to electromigration. This device concept is justified by simulating a buffer, an inverter, and a 3-input majority gate with comprehensive numerical simulations, including spin transport through the FM/non-magnetic (NM) interfaces as well as the NM channel and stochastic magnetization dynamics inside FM wires. In addition to digital computing, the proposed framework can also be used as a transducer between DWs and spin currents for higher wiring flexibility in the interconnect network.
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Submitted 20 September, 2016;
originally announced September 2016.
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Experimental Demonstration of Efficient Spin-Orbit Torque Switching of an MTJ with sub-100 ns Pulses
Authors:
Tanay A. Gosavi,
Sasikanth Manipatruni,
Sriharsha V. Aradhya,
Graham E. Rowlands,
Dmitri Nikonov,
Ian A. Young,
Sunil A. Bhave
Abstract:
Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the potential to provide a scalable solution for embedded memory. We demonstrate a net reduction in critical charge current for spin torque driven magnetization rever…
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Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the potential to provide a scalable solution for embedded memory. We demonstrate a net reduction in critical charge current for spin torque driven magnetization reversal via using spin-orbit mediated spin current generation. We scaled the dimensions of the spin-orbit electrode to 400 nm and the nanomagnet to 270 nm x 68 nm in a three terminal spin-orbit torque, magnetic tunnel junction (SOT-MTJ) geometry. Our estimated effective spin Hall angle is 0.15-0.20 using the ratio of zero temperature critical current from spin Hall switching and estimated spin current density for switching the magnet. We show bidirectional transient switching using spin-orbit generated spin torque at 100 ns switching pulses reliably followed by transient read operations. We finally compare the static and dynamic response of the SOT-MTJ with transient spin circuit modeling showing the performance of scaled SOT-MTJs to enable nanosecond class non-volatile MTJs.
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Submitted 9 August, 2016; v1 submitted 30 June, 2015;
originally announced June 2015.
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Convolutional Networks for Image Processing by Coupled Oscillator Arrays
Authors:
Dmitri E. Nikonov,
Ian A. Young,
George I. Bourianoff
Abstract:
A coupled oscillator array is shown to approximate convolutions with Gabor filters for image processing tasks. Pixelated image fragments and filter functions are converted to voltages, differenced, and input into a corresponding array of weakly coupled Voltage Controlled Oscillators (VCOs). This is referred to as Frequency Shift Keying (FSK). Upon synchronization of the array, the common node ampl…
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A coupled oscillator array is shown to approximate convolutions with Gabor filters for image processing tasks. Pixelated image fragments and filter functions are converted to voltages, differenced, and input into a corresponding array of weakly coupled Voltage Controlled Oscillators (VCOs). This is referred to as Frequency Shift Keying (FSK). Upon synchronization of the array, the common node amplitude provides a metric for the degree of match between the image fragment and the filter function. The optimal oscillator parameters for synchronization are determined and favor a moderate value of the Q-factor.
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Submitted 15 September, 2014;
originally announced September 2014.
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Material Targets for Scaling All Spin Logic
Authors:
Sasikanth Manipatruni,
Dmitri E. Nikonov,
Ian A. Young
Abstract:
All-spin logic devices are promising candidates to augment and complement beyond-CMOS integrated circuit computing due to non-volatility, ultra-low operating voltages, higher logical efficiency, and high density integration. However, the path to reach lower energy-delay product performance compared to CMOS transistors currently is not clear. We show that scaling and engineering the nanoscale magne…
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All-spin logic devices are promising candidates to augment and complement beyond-CMOS integrated circuit computing due to non-volatility, ultra-low operating voltages, higher logical efficiency, and high density integration. However, the path to reach lower energy-delay product performance compared to CMOS transistors currently is not clear. We show that scaling and engineering the nanoscale magnetic materials and interfaces is the key to realizing spin logic devices that can surpass energy-delay performance of CMOS transistors. With validated stochastic nano-magnetic and vector spin transport numerical models, we derive the target material and interface properties for the nanomagnets and channels. We identified promising new directions for material engineering/discovery focusing on systematic scaling of magnetic anisotropy (Hk) with saturation magnetization (Ms), use of perpendicular magnetic anisotropy, and interface spin mixing conductance of ferromagnet/spin channel interface (Gmix). We provide systematic targets for scaling spin logic energy-delay product toward a 2 aJ.ns energy-delay product, comprehending the stochastic noise for nanomagnets.
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Submitted 13 December, 2012;
originally announced December 2012.
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All Spin Nano-magnetic State Elements
Authors:
Sasikanth Manipatruni,
Dmitri E. Nikonov,
Ian A. Young
Abstract:
We propose an all spin state element to enable all spin state machines using spin currents and nanomagnets. We demonstrate via numerical simulations the operation of a state element a critical building block for synchronous, sequential logic computation. The numerical models encompass Landau-Lifshitz-Gilbert (LLG) nanomagnet dynamics with stochastic models and vector spin-transport in metallic mag…
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We propose an all spin state element to enable all spin state machines using spin currents and nanomagnets. We demonstrate via numerical simulations the operation of a state element a critical building block for synchronous, sequential logic computation. The numerical models encompass Landau-Lifshitz-Gilbert (LLG) nanomagnet dynamics with stochastic models and vector spin-transport in metallic magnetic and non-magnetic channels. Combined with all spin combinatorial logic, the state elements can enable synchronous and asynchronous computing elements.
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Submitted 4 October, 2012;
originally announced October 2012.
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Device Considerations for Nanophotonic CMOS Global Interconnects
Authors:
Sasikanth Manipatruni,
Michal Lipson,
Ian A. Young
Abstract:
We introduce an analytical framework to understand the path for scaling nanophotonic interconnects to meet the energy and footprint requirements of CMOS global interconnects. We derive the device requirements for sub 100 fJ/cm/bit interconnects including tuning power, serialization-deserialization energy, optical insertion losses, extinction ratio and bit error rates. Using CMOS with integrated na…
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We introduce an analytical framework to understand the path for scaling nanophotonic interconnects to meet the energy and footprint requirements of CMOS global interconnects. We derive the device requirements for sub 100 fJ/cm/bit interconnects including tuning power, serialization-deserialization energy, optical insertion losses, extinction ratio and bit error rates. Using CMOS with integrated nanophotonics as an example platform, we derive the energy/bit, linear and areal bandwidth density of optical interconnects. We also derive the targets for device performance which indicate the need for continued improvements in insertion losses (<8dB), laser efficiency, operational speeds (>40 Gb/s), tuning power (<100 μW/nm), serialization-deserialization (< 10 fJ/bit/Operation) and necessity for spectrally selective devices with wavelength multiplexing (> 6 channels).
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Submitted 13 December, 2012; v1 submitted 29 July, 2012;
originally announced July 2012.
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Circuit Theory for SPICE of Spintronic Integrated Circuits
Authors:
Sasikanth Manipatruni,
Dmitri E. Nikonov,
Ian A. Young
Abstract:
We present a theoretical and a numerical formalism for analysis and design of spintronic integrated circuits (SPINICs). The formalism encompasses a generalized circuit theory for spintronic integrated circuits based on nanomagnetic dynamics and spin transport. We propose an extension to the Modified Nodal Analysis technique for the analysis of spin circuits based on the recently developed spin con…
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We present a theoretical and a numerical formalism for analysis and design of spintronic integrated circuits (SPINICs). The formalism encompasses a generalized circuit theory for spintronic integrated circuits based on nanomagnetic dynamics and spin transport. We propose an extension to the Modified Nodal Analysis technique for the analysis of spin circuits based on the recently developed spin conduction matrices. We demonstrate the applicability of the framework using an example spin logic circuit described using spin Netlists.
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Submitted 17 February, 2012; v1 submitted 12 December, 2011;
originally announced December 2011.
